TW201107267A - Ceramic powder composition, ceramic material and laminated ceramic capacitor made of the same - Google Patents
Ceramic powder composition, ceramic material and laminated ceramic capacitor made of the same Download PDFInfo
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- TW201107267A TW201107267A TW098128146A TW98128146A TW201107267A TW 201107267 A TW201107267 A TW 201107267A TW 098128146 A TW098128146 A TW 098128146A TW 98128146 A TW98128146 A TW 98128146A TW 201107267 A TW201107267 A TW 201107267A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 27
- 239000000203 mixture Substances 0.000 title claims abstract description 24
- 239000000843 powder Substances 0.000 title claims abstract description 24
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 14
- 239000011651 chromium Substances 0.000 claims abstract description 10
- 239000011777 magnesium Substances 0.000 claims abstract description 10
- 239000011572 manganese Substances 0.000 claims abstract description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 229910002113 barium titanate Inorganic materials 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 206010052428 Wound Diseases 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
201107267 - 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種陶竟粉體組合物、陶究材料及其 所製成的積層陶瓷電容器，且特別是有關於一種可符么 .X8S溫度範圍之陶竞粉體組合物、陶究材料及其所梦成二 .積層陶瓷電容器。 < 【先前技術】 近年來，由於電子元件之發展趨勢朝向小型化、晶片 =三多功能化及高容量化，各種整合型技術開始受到重視， 電容.器亦不例外，除了元件薄小化與多層化的設計已是不 y避免的趨勢外’高電容值及微小晶粒結構的介電材料設 計要求也曰益嚴謹，因此陶兗電容器的發展亦朝向在最小 體積發揮最大功能之方向進行開發。 商用陶瓷電容器的應用可略分為y5V、X5R、X7R、 φ X8S等規格’其中X8S基本上所要求的規格係指在溫度範 圍於55 C〜150 C間’其相對容值變化量介於+22〜-22%。 【發明内容】 本發明提供一種陶瓷粉體組合物，可符合X8S溫度範 圍。 本發明提供一種陶瓷材料，可符合X8S溫度範圍。 本發明提供一種積層陶瓷電容器，可符合X8S溫度範 圍。 201107267 本發明提出一種陶瓷粉體組合物’陶瓷粉體組成物包 括一主成份及一副成份’主成份的含量為95〜99 mol%， 且主成份包括BaTiCb，副成份的含量為1〜5 mol%，且副 成伤由氧化物Bj2〇3_Ti〇2_XO所組成，其中X係選自錢 (Mg)、釩(V)、錳（Μη)及鉻（Cr)所組成之群組。 本發明另提出一種陶瓷材料，係由上述的陶瓷粉體組 合物所燒結而成。 、 本發明另提出一種積層陶瓷電容器，積層陶瓷電容器 包3 . —陶瓷介電質、複數個内部電極、複數個内部電極 以及至少一外部電極。陶瓷介電質由如上述的陶瓷粉體組 合物燒結而成，而這些内部電極，大體上平行延伸於該陶 瓷介電質内，且外部電極則曝露於陶瓷介電質外，並電性 連接該些内部電極。 产综上所述’本發明係透過一包括BaTj〇3的主成份及一 由氧化物Bi203-Ti02-X0組成的副成份，透過主成份與副 成伤之間的相互搭配，提供一種可符合X8S溫度範圍的陶 瓷粉體組合物、陶瓷材料及其所製成的積層陶瓷電容器。 【貫施方式】 以下將參照相關圖示，說明依本發明較佳實施例之陶 兗粉體組合物，為使便於理解，下述實施例中之相同元件 係以相同之符號標示來說明。 本發明之陶竞粉體組合物，係以特定比率的〆主成份 與一副成份彼此搭配進行燒結，其t主成份包括的丁必， 201107267 副成份則由氧化物Bi2〇3-Ti〇2-X〇所組成’且x係選自鎂 (Mg)、鈒(V)、錳（Μη)及鉻（Cr)所組成之群組。其中，主成 份的含量為95〜99 mol%，而副成份的含量則為1〜5 mol% ’透過上述比例將主成份與副成份進行燒結之後’可 以提供一種符合X8S溫度範圍的陶瓷粉體組合物。 這裡需特別說明有關於副成份的氧化物 Bi2〇3_Tj〇2-XO，氧化物Bi2〇3-Ti〇2_X〇是指先分別將 Bi2〇3、Ti02、XO的各別氧化物混合之後並進行锻燒而得， φ 這裡Bi2〇3、Ti02、XO的各氧化物添加比例可表示為 αΒί2〇3+βΤί02+γΧ〇，而 〇.ΐ5$α$0.80，0.14$β$0.80， 0$γ$0.7。 請分別參閱圖1及圖2,圖1是氧化物Bi2〇3-Ti02-XO 的三元相圖，圖2是氧化物Bi203-Ti〇2-X〇可符合X8S溫 度祐圍的形成區域範圍。由圖1氧化物Bi2〇3_Ti〇2_X〇的 三元相圖可知，氧化物Bi203-Ti02-X0是分別由氧化物 Bi2〇3、Ti02及XO所組成，而Bi203-Ti〇2-X〇的形成方法， • 實質上是先混合Bi203、Ti02及χ〇，之後進行研磨、過篩 後，最後再900°C煅燒’形成氧化物Bi2〇3-Ti〇2-X〇。 從實驗結果可知’三元相圖所指示之特定區域内的燒 結出來的成份’如圖2所示的範圍，此範圍所燒結出來的 陶瓷材料’當應用於積層陶瓷電容元件，可符合X8S的容 值變化量。 舉例來說’請先參閱表1，表1是形成氧化物 Bi2〇3_Ti〇2-X〇時各氧化物的添加比例，依照表1内所示 201107267 的14組（A1〜A14)的比例，可以先煅燒出本發明陶瓷粉 體組成物所示的副成份：氧化物ΒΪ2〇3-ΤΊ〇2_Χ〇。 之後’將副成份的氧化物Bi2〇3_Ti〇2-X〇與包括 BaTi03的主成份混合再次進行燒結，燒結溫度約介於1200 °C〜1300°C，當燒結之後，就可以形成為一陶瓷材料，應 用於積層陶瓷電容元件。 另請參閱表2，表2是將表1内所示的14組（A1〜 A14)與包括BaTi〇3的主成份，在1200°C以下燒結後陶 瓷材料的特性表現，從表2可知，A3、A5、A6、A7、A10 及A13組的陶瓷粉體主組合物，其特性表現可符合X8S規 格。 另外，請再參閱圖3，圖3是積層陶瓷電容器容值變 化率與溫度之關係圖，由圖3可知，A3、A5、A6、A7、 A10及A13組的積層陶瓷電容器之容值變化量符合X8S溫 度範圍，亦即在溫度範圍於-55°C〜150°C之間，其相對容值 變化量介於+22%〜-22%。
Sample αΒΪ2〇3+βΤί〇2+γΧ〇 No. A Β Υ X A1 0.800 0.200 0 Μη A2 0.727 0.182 0.091 Μη A3 0.571 0.143 0.286 Μη A4 0.545 0.364 0.091 Μη 201107267
A5 0.300 0.200 0.500 Μη A6 0.160 0.240 0.600 Μη A7 0.250 0.375 0.375 Μη A8 0.400 0.600 0 Μη A9 0.200 0.800 0 Μη A10 0.450 0.050 0.500 Μη A11 0.150 0.150 0.700 Μη A12 0.150 0.400 0.550 Μη A13 0.300 0.200 0.500 Mg 表1 :形成氧化物Bi2〇3_Ti〇2-X〇時各氧化物的添加比例
Sample Dielectric Constant DF (%) IR (G-ohm) Db X8S Characteristics A1 2003 14.50 0.093 5.26 NG Α2 1964 11.97 0.053 5.3 NG A3 1745 6.41 0.23 5.31 Good Α4 1899 8.29 0.19 5.27 NG Α5 2252 1.00 102 5.55 Good Α6 2291 1.34 127 5.62 Good Α7 2588 4.31 4.19 5.37 Good Α8 2196 16.14 0.174 5.29 NG Α9 2461 5.98 0.276 5.36 NG Α10 2320 1.12 90 5.60 Good 201107267 A11 2282 0.09 101 5.42 NG A12 2334 1.30 5.20 5.38 NG A13 1878 4.17 22.6 5.63 Good 表2:陶瓷材料的特性表現 本發明之陶瓷粉體組合物主要可應用於積層陶瓷電容 元件。請參考圖4,圖4是積層陶瓷電容器之結構剖面圖。 圖4所繪示的積層陶瓷電容器1，包含一電容陶瓷體110 以及一外部電極120，電容陶瓷體110包含複數層介電陶 瓷層112以及沿著介電陶瓷層之表面形成之複數層内部電 極111，外部電極120係形成於電容陶瓷體110外，並與 部分之内部電極111電性連接，其中内部電極111可以為 鎳電極。 須特別說明的是積層陶瓷電容器1的介電陶瓷層 112,介電陶瓷層112是由本發明之陶瓷粉體組合物所燒結 而成，燒結溫度為1200〜1300°C，燒結完成之後，由實驗 結果可知，透過本發明之陶瓷粉體組合物燒結而成上述之 介電陶瓷層112,其構成的積層陶瓷電容器之容值變化量 符合X8S溫度範圍，亦即在溫度範圍於-55°C〜150°C之間， 其相對容值變化量介於+22%〜-22%，如此可提供一種可符 合X8S溫度範圍的積層陶瓷電容器。 綜上所述，本發明係透過一包括BaTi〇3的主成份及一 由氧化物Bi2〇3_Ti〇2_X〇組成的副成份，透過主成份與副 成份之間的相互搭配，提供一種可符合X8S溫度範圍的陶 201107267 • 瓷粉體組合物、陶瓷材料及其所製成的積層陶瓷電容器。 雖然本發明以前述實施例揭露如上，然其並非用以限 定本發明，任何熟習相像技藝者，在不脫離本發明之精神 和範圍内，所作更動與潤飾之等效替換，仍為本發明之專 利保護範圍内。 201107267 【圖式簡單說明】 圖1是氧化物Bi2〇3-Ti〇2-X〇的三元相圖； 圖2是氧化物b丨2〇3_Tj〇2_x〇可符合X8S溫度範圍的 形成區域範圍； 圖3是積層喊電容器容值變化率與溫度之關係圖； 以及 圖4是積層陶莞電容器之結構剖面圖。 【主要元件符號說明】 1 積層陶瓷電容器 110電容陶究體 111内部電極 112介電陶曼層 120外部電極 10
Claims (1)
- 201107267 七 、申請專利範圍： 1. 一種陶瓷粉體組成物，係包括： 一主成份，含量為95〜99 mol。/。，包括BaTi〇3 ;以 及 一副成份，含量為1〜5 mol%，由氧化物 Bi2〇3-Ti02-X0所組成，其中X係選自鎂（Mg)、釩 (V)、錳（Μη)及鉻（Cr)所組成之群組。 2. 如申請專利範圍第1項所述之陶瓷粉體組合物，其中 • 該副成份的各氧化物煅燒添加比例可表示為 αΒΪ2〇3+βΤΐ〇2+γΧ〇 ，其中 0·15$α$0_80 ， 0·14$β$0·80，0€γ$0·7。 3. 一種陶瓷材料，係由申請專利範圍第1項之陶瓷粉體 組合物所燒結而成。 4. 如申請專利範圍第3項所述之陶瓷材料，其中該陶瓷 材料之燒結溫度為1200〜1300°C。 5. .· 一種積層陶竟電容器，包含： 一陶瓷介電質，係由一主成份及一副成份燒結而 成，該主成份含量為95〜99 mol%，包括BaTi03， 該副成份含量為1〜5 mol%，由氧化物Bi2〇3-Ti〇2-X〇所組成，其中X係選自鎂（Mg)、釩(V)、 錳（Μη)及鉻（Cr)所組成之群組； 複數個内部電極，平行延伸於該陶瓷介電質内； 以及 至少一外部電極，曝露於該陶瓷介電質外，並電 201107267 性連接該些内部電極。 6. 如申請專利範圍第5項所述之積層陶瓷電容器，其中 該積層陶瓷電容器之容質變化量符合X8S溫度範圍， 亦即在溫度範圍於-55°C〜150°C之間，其相對容質變化 量小於22%。 7. 如申請專利範圍第5項所述之積層陶瓷電容器，其中 該些内部電極為鎳電極。 8. 如申請專利範圍第5項所述之積層陶曼電容器，其中 該副成份的各氧化物煅燒添加比例可表示為 αΒΪ2〇3+βΤϊ〇2+γΧ〇 ，其中 0·15$α$0·80 ， 0·14$β$0·80，0$γ$0·7。 9. 如申請專利範圍第5項所述之積層陶瓷電容器，其中 該陶瓷介電質的燒結溫度為1200〜1300°C。 12
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| TW098128146A TW201107267A (en) | 2009-08-21 | 2009-08-21 | Ceramic powder composition, ceramic material and laminated ceramic capacitor made of the same |
| US12/860,100 US20110043964A1 (en) | 2009-08-21 | 2010-08-20 | Ceramic powder composition, ceramic material, and multi-layer ceramic capacitor fabricated thereby |
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| TW098128146A TW201107267A (en) | 2009-08-21 | 2009-08-21 | Ceramic powder composition, ceramic material and laminated ceramic capacitor made of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI471288B (zh) * | 2012-12-28 | 2015-02-01 | Holy Stone Entpr Co Ltd | 積層陶瓷電容用介電陶瓷材料 |
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- 2010-08-20 US US12/860,100 patent/US20110043964A1/en not_active Abandoned
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| TWI471288B (zh) * | 2012-12-28 | 2015-02-01 | Holy Stone Entpr Co Ltd | 積層陶瓷電容用介電陶瓷材料 |
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