TW201100973A - A method and arrangement for realizing a vacuum in a vacuum chamber - Google Patents

A method and arrangement for realizing a vacuum in a vacuum chamber Download PDF

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Publication number
TW201100973A
TW201100973A TW99105116A TW99105116A TW201100973A TW 201100973 A TW201100973 A TW 201100973A TW 99105116 A TW99105116 A TW 99105116A TW 99105116 A TW99105116 A TW 99105116A TW 201100973 A TW201100973 A TW 201100973A
Authority
TW
Taiwan
Prior art keywords
vacuum
vacuum chamber
pump
low temperature
lithography system
Prior art date
Application number
TW99105116A
Other languages
English (en)
Chinese (zh)
Inventor
Sander Baltussen
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201100973A publication Critical patent/TW201100973A/zh

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Classifications

    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17DPIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00Pipe-line systems
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/22Optical, image processing or photographic arrangements associated with the tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175Projection methods, i.e. transfer substantially complete pattern to substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18Vacuum control means
    • H01J2237/182Obtaining or maintaining desired pressure
    • H01J2237/1825Evacuating means
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S417/00Pumps
    • Y10S417/901Cryogenic pumps
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/0318Processes
    • Y10T137/0396Involving pressure control
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/85978With pump
    • Y10T137/86083Vacuum pump
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00Fluid handling
    • Y10T137/8593Systems
    • Y10T137/85978With pump
    • Y10T137/86131Plural

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW99105116A 2009-02-22 2010-02-22 A method and arrangement for realizing a vacuum in a vacuum chamber TW201100973A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US28940709P 2009-12-23 2009-12-23
US30633310P 2010-02-19 2010-02-19

Publications (1)

Publication Number Publication Date
TW201100973A true TW201100973A (en) 2011-01-01

Family

ID=42124236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99105116A TW201100973A (en) 2009-02-22 2010-02-22 A method and arrangement for realizing a vacuum in a vacuum chamber

Country Status (7)

Country Link
US (2) US8366423B2 (https=)
EP (1) EP2399272A1 (https=)
JP (1) JP5653941B2 (https=)
KR (1) KR101553802B1 (https=)
CN (1) CN102414775A (https=)
TW (1) TW201100973A (https=)
WO (1) WO2010094801A1 (https=)

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CN103187231A (zh) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 一种离子注入机自动建立束线与靶室高真空的方法
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
CN103727036B (zh) * 2014-01-18 2015-04-15 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN103727051B (zh) * 2014-01-18 2015-05-13 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
CN105931694B (zh) * 2016-05-06 2018-05-22 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN206332060U (zh) * 2016-10-28 2017-07-14 应用材料公司 热学腔室
CN106586282A (zh) * 2016-12-09 2017-04-26 安徽亿瑞深冷能源科技有限公司 一种可独立控制的多真空腔体高温存储设备
US10794536B2 (en) * 2017-11-30 2020-10-06 Cryogenic Fuels Inc. Vacuum acquisition systems and methods
US20220065727A1 (en) * 2020-08-28 2022-03-03 Kla Corporation Coolant Microleak Sensor for a Vacuum System
CN115110040B (zh) * 2022-06-20 2024-05-14 北京维开科技有限公司 一种独立双腔室电子束蒸发镀膜设备
US20240337265A1 (en) * 2023-04-06 2024-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Cryogenic pump for semiconductor processing
FR3164314A1 (fr) * 2024-07-03 2026-01-09 Pfeiffer Vacuum Equipement et procédé de fabrication
CN119781255A (zh) * 2025-01-24 2025-04-08 中国科学院微电子研究所 光刻机及光刻机污染控制方法

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Also Published As

Publication number Publication date
KR20110129414A (ko) 2011-12-01
WO2010094801A1 (en) 2010-08-26
US20130133752A1 (en) 2013-05-30
US8857465B2 (en) 2014-10-14
CN102414775A (zh) 2012-04-11
JP2012518878A (ja) 2012-08-16
US20100269911A1 (en) 2010-10-28
US8366423B2 (en) 2013-02-05
KR101553802B1 (ko) 2015-09-17
JP5653941B2 (ja) 2015-01-14
EP2399272A1 (en) 2011-12-28

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