CN102414775A - 用于在真空腔中实现真空的方法和配置 - Google Patents

用于在真空腔中实现真空的方法和配置 Download PDF

Info

Publication number
CN102414775A
CN102414775A CN2010800176511A CN201080017651A CN102414775A CN 102414775 A CN102414775 A CN 102414775A CN 2010800176511 A CN2010800176511 A CN 2010800176511A CN 201080017651 A CN201080017651 A CN 201080017651A CN 102414775 A CN102414775 A CN 102414775A
Authority
CN
China
Prior art keywords
vacuum
vacuum chamber
pump
outlet
sectional area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800176511A
Other languages
English (en)
Chinese (zh)
Inventor
S.巴尔图森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN102414775A publication Critical patent/CN102414775A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S417/00—Pumps
    • Y10S417/901—Cryogenic pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN2010800176511A 2009-02-22 2010-02-22 用于在真空腔中实现真空的方法和配置 Pending CN102414775A (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19
PCT/EP2010/052218 WO2010094801A1 (en) 2009-02-22 2010-02-22 A method and arrangement for realizing a vacuum in a vacuum chamber

Publications (1)

Publication Number Publication Date
CN102414775A true CN102414775A (zh) 2012-04-11

Family

ID=42124236

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800176511A Pending CN102414775A (zh) 2009-02-22 2010-02-22 用于在真空腔中实现真空的方法和配置

Country Status (7)

Country Link
US (2) US8366423B2 (https=)
EP (1) EP2399272A1 (https=)
JP (1) JP5653941B2 (https=)
KR (1) KR101553802B1 (https=)
CN (1) CN102414775A (https=)
TW (1) TW201100973A (https=)
WO (1) WO2010094801A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103727051A (zh) * 2014-01-18 2014-04-16 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
CN103727036A (zh) * 2014-01-18 2014-04-16 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN105931694A (zh) * 2016-05-06 2016-09-07 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN106586282A (zh) * 2016-12-09 2017-04-26 安徽亿瑞深冷能源科技有限公司 一种可独立控制的多真空腔体高温存储设备
CN119781255A (zh) * 2025-01-24 2025-04-08 中国科学院微电子研究所 光刻机及光刻机污染控制方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101553802B1 (ko) * 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
CN103187231A (zh) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 一种离子注入机自动建立束线与靶室高真空的方法
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
CN206332060U (zh) * 2016-10-28 2017-07-14 应用材料公司 热学腔室
US10794536B2 (en) * 2017-11-30 2020-10-06 Cryogenic Fuels Inc. Vacuum acquisition systems and methods
US20220065727A1 (en) * 2020-08-28 2022-03-03 Kla Corporation Coolant Microleak Sensor for a Vacuum System
CN115110040B (zh) * 2022-06-20 2024-05-14 北京维开科技有限公司 一种独立双腔室电子束蒸发镀膜设备
US20240337265A1 (en) * 2023-04-06 2024-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Cryogenic pump for semiconductor processing
FR3164314A1 (fr) * 2024-07-03 2026-01-09 Pfeiffer Vacuum Equipement et procédé de fabrication

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174286A (ja) * 1983-03-25 1984-10-02 Hitachi Seiko Ltd 電子ビ−ム加工装置
US5971711A (en) * 1996-05-21 1999-10-26 Ebara Corporation Vacuum pump control system

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
US4725204A (en) 1986-11-05 1988-02-16 Pennwalt Corporation Vacuum manifold pumping system
JPS63274446A (ja) * 1987-05-01 1988-11-11 Nec Corp 真空装置ベ−キング方法およびその装置
US4911103A (en) * 1987-07-17 1990-03-27 Texas Instruments Incorporated Processing apparatus and method
US5088895A (en) * 1990-09-04 1992-02-18 The Hilliard Corporation Vacuum pumping apparatus
JP2993126B2 (ja) * 1990-12-07 1999-12-20 富士通株式会社 クライオポンプのヘリウム供給方法及びクライオポンプへのヘリウム供給装置
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
FI95421C (fi) * 1993-12-23 1996-01-25 Heikki Ihantola Puolijohteen, kuten piikiekon, prosessoinnissa käytettävä laitteisto ja menetelmä
JPH07282993A (ja) * 1994-04-14 1995-10-27 Kawasaki Heavy Ind Ltd 電子ビーム励起プラズマ発生用電子ビーム発生装置
US5685963A (en) * 1994-10-31 1997-11-11 Saes Pure Gas, Inc. In situ getter pump system and method
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6337102B1 (en) * 1997-11-17 2002-01-08 The Trustees Of Princeton University Low pressure vapor phase deposition of organic thin films
JPH11204508A (ja) * 1998-01-09 1999-07-30 Toshiba Corp 半導体装置の製造方法及び半導体製造装置
JPH11230036A (ja) * 1998-02-18 1999-08-24 Ebara Corp 真空排気システム
US7077159B1 (en) * 1998-12-23 2006-07-18 Applied Materials, Inc. Processing apparatus having integrated pumping system
JP2004218648A (ja) 1999-03-05 2004-08-05 Tadahiro Omi 真空装置
JP3019260B1 (ja) * 1999-03-26 2000-03-13 株式会社日立製作所 電子ビ―ム描画装置
JP2001057153A (ja) * 1999-08-20 2001-02-27 Sanyo Electric Works Ltd 平面形放電管の製造方法及びその装置
US7257987B2 (en) * 2000-01-25 2007-08-21 State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Portland State University Method and apparatus for sample analysis
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
ATE381728T1 (de) 2003-07-30 2008-01-15 Mapper Lithography Ip Bv Modulator-schaltkreise
JP4370924B2 (ja) * 2003-08-27 2009-11-25 株式会社ニコン 真空装置、真空装置の運転方法、露光装置、及び露光装置の運転方法
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
US8192547B2 (en) * 2006-09-25 2012-06-05 Veeco Instruments Inc. Thermally isolated cryopanel for vacuum deposition systems
US8089055B2 (en) * 2008-02-05 2012-01-03 Adam Alexander Brailove Ion beam processing apparatus
KR101553802B1 (ko) * 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174286A (ja) * 1983-03-25 1984-10-02 Hitachi Seiko Ltd 電子ビ−ム加工装置
US5971711A (en) * 1996-05-21 1999-10-26 Ebara Corporation Vacuum pump control system

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103727051A (zh) * 2014-01-18 2014-04-16 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
CN103727036A (zh) * 2014-01-18 2014-04-16 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN103727036B (zh) * 2014-01-18 2015-04-15 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN103727051B (zh) * 2014-01-18 2015-05-13 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
CN105931694A (zh) * 2016-05-06 2016-09-07 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN105931694B (zh) * 2016-05-06 2018-05-22 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN106586282A (zh) * 2016-12-09 2017-04-26 安徽亿瑞深冷能源科技有限公司 一种可独立控制的多真空腔体高温存储设备
CN119781255A (zh) * 2025-01-24 2025-04-08 中国科学院微电子研究所 光刻机及光刻机污染控制方法

Also Published As

Publication number Publication date
KR20110129414A (ko) 2011-12-01
WO2010094801A1 (en) 2010-08-26
US20130133752A1 (en) 2013-05-30
US8857465B2 (en) 2014-10-14
JP2012518878A (ja) 2012-08-16
TW201100973A (en) 2011-01-01
US20100269911A1 (en) 2010-10-28
US8366423B2 (en) 2013-02-05
KR101553802B1 (ko) 2015-09-17
JP5653941B2 (ja) 2015-01-14
EP2399272A1 (en) 2011-12-28

Similar Documents

Publication Publication Date Title
CN102414775A (zh) 用于在真空腔中实现真空的方法和配置
CN104520968B (zh) 带电粒子光刻系统和射束产生器
JP5805851B2 (ja) リソグラフィシステムにおいて基板を処理する方法
RU2579533C2 (ru) Литографическая система и способ обработки подложек в такой литографической системе
TWI517196B (zh) 具有中間腔室的帶電粒子微影系統
CN105745577B (zh) 目标处理单元
CN102414776A (zh) 微影机及基板处理的配置
CN101641742B (zh) 电子束描绘设备及其台架机构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20120411