KR101553802B1 - 진공 챔버에서 진공을 실현하기 위한 장치 및 방법 - Google Patents

진공 챔버에서 진공을 실현하기 위한 장치 및 방법 Download PDF

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Publication number
KR101553802B1
KR101553802B1 KR1020117022029A KR20117022029A KR101553802B1 KR 101553802 B1 KR101553802 B1 KR 101553802B1 KR 1020117022029 A KR1020117022029 A KR 1020117022029A KR 20117022029 A KR20117022029 A KR 20117022029A KR 101553802 B1 KR101553802 B1 KR 101553802B1
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South Korea
Prior art keywords
vacuum
pump
pumps
vacuum chamber
chamber
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English (en)
Korean (ko)
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KR20110129414A (ko
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산더 발투센
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마퍼 리쏘그라피 아이피 비.브이.
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Application granted granted Critical
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Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H01J2237/1825—Evacuating means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S417/00—Pumps
    • Y10S417/901—Cryogenic pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
    • Y10T137/0396—Involving pressure control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86083—Vacuum pump
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85978—With pump
    • Y10T137/86131—Plural

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117022029A 2009-02-22 2010-02-22 진공 챔버에서 진공을 실현하기 위한 장치 및 방법 Expired - Fee Related KR101553802B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US61/154,415 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19

Publications (2)

Publication Number Publication Date
KR20110129414A KR20110129414A (ko) 2011-12-01
KR101553802B1 true KR101553802B1 (ko) 2015-09-17

Family

ID=42124236

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117022029A Expired - Fee Related KR101553802B1 (ko) 2009-02-22 2010-02-22 진공 챔버에서 진공을 실현하기 위한 장치 및 방법

Country Status (7)

Country Link
US (2) US8366423B2 (https=)
EP (1) EP2399272A1 (https=)
JP (1) JP5653941B2 (https=)
KR (1) KR101553802B1 (https=)
CN (1) CN102414775A (https=)
TW (1) TW201100973A (https=)
WO (1) WO2010094801A1 (https=)

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KR101553802B1 (ko) * 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
CN103187231A (zh) * 2011-12-30 2013-07-03 北京中科信电子装备有限公司 一种离子注入机自动建立束线与靶室高真空的方法
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
CN104428866A (zh) * 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US9575494B2 (en) * 2013-11-14 2017-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for processing wafer
CN103727036B (zh) * 2014-01-18 2015-04-15 淄博水环真空泵厂有限公司 巨型真空室真空度的精确调节系统
CN103727051B (zh) * 2014-01-18 2015-05-13 淄博水环真空泵厂有限公司 大抽气量多支路流量精确控制系统
US10180248B2 (en) 2015-09-02 2019-01-15 ProPhotonix Limited LED lamp with sensing capabilities
CN105931694B (zh) * 2016-05-06 2018-05-22 东莞中子科学中心 一种高性能中子准直器及其组装方法
CN206332060U (zh) * 2016-10-28 2017-07-14 应用材料公司 热学腔室
CN106586282A (zh) * 2016-12-09 2017-04-26 安徽亿瑞深冷能源科技有限公司 一种可独立控制的多真空腔体高温存储设备
US10794536B2 (en) * 2017-11-30 2020-10-06 Cryogenic Fuels Inc. Vacuum acquisition systems and methods
US20220065727A1 (en) * 2020-08-28 2022-03-03 Kla Corporation Coolant Microleak Sensor for a Vacuum System
CN115110040B (zh) * 2022-06-20 2024-05-14 北京维开科技有限公司 一种独立双腔室电子束蒸发镀膜设备
US20240337265A1 (en) * 2023-04-06 2024-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Cryogenic pump for semiconductor processing
FR3164314A1 (fr) * 2024-07-03 2026-01-09 Pfeiffer Vacuum Equipement et procédé de fabrication
CN119781255A (zh) * 2025-01-24 2025-04-08 中国科学院微电子研究所 光刻机及光刻机污染控制方法

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JP2005101492A (ja) 2003-08-27 2005-04-14 Nikon Corp 真空装置、真空装置の運転方法、露光装置、及び露光装置の運転方法

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Also Published As

Publication number Publication date
KR20110129414A (ko) 2011-12-01
WO2010094801A1 (en) 2010-08-26
US20130133752A1 (en) 2013-05-30
US8857465B2 (en) 2014-10-14
CN102414775A (zh) 2012-04-11
JP2012518878A (ja) 2012-08-16
TW201100973A (en) 2011-01-01
US20100269911A1 (en) 2010-10-28
US8366423B2 (en) 2013-02-05
JP5653941B2 (ja) 2015-01-14
EP2399272A1 (en) 2011-12-28

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