TW201100493A - Photovoltaic module mono-backsheet, method for the production thereof, and the use thereof in the production of photovoltaic modules - Google Patents
Photovoltaic module mono-backsheet, method for the production thereof, and the use thereof in the production of photovoltaic modules Download PDFInfo
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- TW201100493A TW201100493A TW099118665A TW99118665A TW201100493A TW 201100493 A TW201100493 A TW 201100493A TW 099118665 A TW099118665 A TW 099118665A TW 99118665 A TW99118665 A TW 99118665A TW 201100493 A TW201100493 A TW 201100493A
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- Prior art keywords
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
- C08G69/265—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids from at least two different diamines or at least two different dicarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G69/00—Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
- C08G69/02—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
- C08G69/26—Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
- C09D177/06—Polyamides derived from polyamines and polycarboxylic acids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2377/00—Characterised by the use of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Derivatives of such polymers
- C08J2377/06—Polyamides derived from polyamines and polycarboxylic acids
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Photovoltaic Devices (AREA)
- Polyamides (AREA)
- Extrusion Moulding Of Plastics Or The Like (AREA)
Description
201100493 六、發明說明: 【發明所屬之技彳标領域】 電力之太 本發w_於輕伏打麵 陽能電频組。 丨用以座生元电 部内容娜為蝴,該案之全 ,5及對如本案之所有意圖及目的,合先申明。 Ο 〇 連著此ϊίηί,’表面上組裝有許多個別之太陽電池並互 2Ξ製:。由半導體 之陽光直觀触電力; =ΐί:ί力太陽能工廠係將許多模組串聯而成,如此可產 光電伏打模組通常形成平板狀多層疊層構造,具有:位 最縣賴製叙咖平板層;雜胁其下面之 :好疋由乙烯-乙酉夂乙稀醋(EVA)製成之黏性介體薄片層 =來,;透明平板層黏接於真正太陽電池(二 也可以是僅-;朗骑太陽電 == ί背之猶厚之背片(亦稱背板)之另- ^到加歷縮時,麟腸層岛_域—體)。±述各 依上述相反之順序先疊置於壓機,以便使該透^ 在®層施工之際做為剛性底層以承載其他各層。如此 即被埋置於彈性透明服熱雜接劑内且封裝於玻 = 拥之主娜_姊上職之光驗塊組用3 4 201100493
【先前技掏J 有關此技術背景之詳細說明揭示於 94/·。術(杜邦股份姚公司所有之商標名 烯齓化物(PVF)載列於遠申請案中做為較適宜之 伽 =申實之形態。』 龍)、雜酮、含氟聚合鱗等均可做為f面模組層糾^斗。胺( 使用聚醯胺做為光電伏打模組之封裝材料詳載於 Ο Ο =!^008/138021A2之說明書中間部,此域在先前技術ΐ k及由3氟聚合物及聚酯(亦即,ργρ及£¥八)製成之多声次 複合板做為(背面)練材料。為了將此種封裝材料黏著於9埋置材 料,聚麵(PA)被提雜為封裝材料’即做為W〇2〇〇8/138〇21 Μ 中之光電伏打模組之为板用材料,至於乙婦_乙酸乙稀酉旨毋則 被忽視。種種聚酿胺類型材料明载於該案中,包括:PA 6、ρΑ 、 ΡΑ7、ΡΑ9、ΡΑ10、ΡΑ11、ΡΑ12、ΡΑ69、ΡΑ610、ΡΑ612、ΡΑ6-3-Τ, 及5^鄰本一曱酿胺(ΡΡΑ)。所載列之適宜之pa類在該w〇 8/1;38〇21 Α2娀巾並無使用在複合薄片或做為單背片之實驗 證明,然而,聚醯胺11(ΡΑ 11)也被注意到可能做為背片材料,出 ^ Proc. Of SP1E (2008) Vol. 7048 (Reliability of Photovoltaic CeUs,
Modules’ Components,and Systems),70480C/1-10.由 S.B. Levy 發表之技術論文‘"BioBasedBacksheet” 一文中。在此論文中,尼 月1(或PA11)被視為是一種價格合理之背板用材料,因係基於其可 再生原料來源(蓖蔴油)之故,再者’該論文也揭示PA 11還具财 用性(fp,不受生物學上劣化),因此,有利於使用在對環境友善 太陽能發電上。此外,該論文也揭示尼龍11在實際應用上並不 單獨使用’而是通常與其他片材(例如’纖維素)組成為複合材料 做為背板。 美國專利US2009/0101204 A1案中,排名前頭之發明人S.B. Levy也得到相同之結論,即,聚醒胺n(尼龍,層51〇)在此係 201100493 ^-特殊魏絕緣紙W)組合峨為光電伏㈣ 第五圖及相關說明)。此魏胺η係利用擠壓 ,之保護板⑻關片材,且純陳此 = 自聚酯(PET或PEN)或氟聚合物ETFE 〇罟匕括k 【發明内容】 ,典型的提供多層次背板之先前技術對比,本發明係齡發 康此材料可製造纖打模組用單層 Ο Ο 土述目的’係由以具有巾請專利細第丨項之特徵之聚 揭示於附屬請求項中,此t ===述背板之製造方法一背板丄 構叫且一胺基麵為級 片β ,丨本發明係有關光電伏打模組用之單背片(板),該單背 ^特°根據本發明之找伏打模組單背片, 又峨由線性及顧支結構之脂族及 至ϊ 成。該綱係選取具有碳原子數平均在 可能具有小於8 職即,麵單體也 個以上之麵何_料足的 情包含其他單體具有8 之單St胺用之具有平均碳原子數至少8個,且最多17個 早體之事貫為,可雛選擇個別之單體之平台往顶與雜胺 6 201100493 中所含每-單體必需具有至少 言),且胁考量使用短鏈單_^2之f歸件相比較而 中所用之其他型之長鍵單於 ,鏈一胺)可能由同聚醯胺 可能性,·,補償之 要求能符合要件之聚醯胺之一例為PA 412,胺俜均 胺丁ί胺及C12-二誠十二烷二_合成〇 盆、、自^二胺、二羧酸、内醯胺、及絲羧酸,以及
l j) · W^PA610及ΡΑ612排除在本發曰月之外,另外,以内 fcfec及胺基叛酸為主^材之聚醯胺係交聯結構。 f 一胺及二驗為域分來自表列細之獅胺代表非交聯 以及交聯形態兩種之較佳變體物。 聚醯胺也可包含環脂族單體,再加上脂族單體,這些單體以 下列者較佳:CHDA(「環脂單體複合環己烧二魏酸」之縮寫、意 指M-CHDA)、BAC (「雙胺基環己烧」之縮寫)、 一胺基二環己基-甲烧)、jVL\CM (=3,3’_二曱基-4,4,-二胺基二環已 代甲院)及環脂族二胺之混合物。 在較佳之實施例中,聚醯胺係選自包含:聚醯胺4χ(χ=具有 碳原子數12至18個之線性脂族二羧哟、交聯聚醯胺4Χ、交聯 聚醯胺9、聚醯胺99、交聯聚醯胺99、聚醯胺910、交聯聚醯胺 910、聚酸胺1010、交聯聚酸胺1〇1〇、交聯聚酿胺11、交聯聚醯 胺12、聚醯胺101CV10 CHDA、交聯聚醯胺1010/10 CHDA、聚醯 胺 610/10 CHDA、交聯聚醯胺 610/10 CHDA、聚醯胺 612/10 CHDA、交聯聚醯胺612/10 CHDA、聚醯胺910/10 CHDA、交聯 聚醯胺912/10 CHDA、聚醯胺912Λ0 CHDA、交聯聚醯胺912/10 CHDA、聚醯胺 1012/12 CHDA、交聯聚醯胺 1012/12 CHDA、聚 醯胺1212/10 CHDA、交聯聚醯胺1212/12 CHDA、聚醯胺1012、 交聯聚醯胺1012、聚醯胺1014、交聯聚醯胺1014、聚醯胺1212、 交聯聚醯胺1212、聚醯胺1210、交聯聚醯胺1210、聚醯胺 201100493 MACMY(Y=具有碳原子9至18個之線性脂族二叛酸)、交聯聚醯 胺MACMY '聚醯胺PACMY、交聯聚醯胺pACMY、聚醯胺 MACMY/PACMY、交聯聚醯胺macmy/PACMY,以及其混合 物之君^ 〇 該聚醯胺如選自包含聚醯胺1010及交聯聚醯胺1010之群尤 佳。 應了解適用術語之聚醯胺(縮寫為PA)包括均聚醯胺及共聚醯 胺’及均聚酿胺及/或共聚醯胺之混合物(攙合物)。 根據本發明之背板用聚醯胺模製(成型)配料,最好含有至
=二種選自白色顏料、UV吸收劑、抗氧化劑、熱安定劑、水解 女定劑、交聯活化劑、阻燃劑、層狀石夕酸塩、填充料、著色劑(包 含染料及色料)、增強劑、黏著媒劑、衝擊強度改良劑、及含氟聚 合物之添加劑。 /經,從申請專利範圍所選擇之聚醯胺,加上視必要任選之一 種或更多種添加劑,根據本發明之聚醯胺光電伏打模組之單背片 ’在特別適合之實施例且形成單層片,能滿足此種背片之所 要件,諸如:耐氣候性(抗1^及水雛)、抗熱性、機械 保濩=、電氣絕緣性、高反射性及良好黏接性。 提供所要高反射性之白色顏料最好是二氧化鈦(例如,呈金 、甘^ ί銳欽礦晶體改良狀態)。二氧化鈦同時也扮演w吸收劑。 二银夕!f之白色顏料為例如,氧化鋅及硫化鋅。使用白色顏料 貝現之背板之反射率最好是至少92%。 依本發明之光電伏打模組單背片最好使用擠製方法。 劑於ί醉ίί J結:冓之聚醯胺,宜於模製成型之前添加交聯活化 (=三甲酉配料中’較佳之交聯活化劑為,例如,ΤΜΗΜΑ 二甲丙稀_及獸(=三丙碱異氰尿_該 侧如絲朗方式之構 於事後:由1==产’此交聯最好是在擠出之薄片上 照射卿峨耐彡成。該高缝騎最好以電子束 201100493 由依本發明之複合配料依上述方法所製成之背片係適用於製 造光電伏打模組。 具有交聯聚酿胺11及聚龜胺910 (非交聯及交聯)、聚醯胺 1〇1〇(非交聯及交聯)、聚醯胺1010/10CHDA(非交聯及交聯)、聚 醯月女1012 (非交聯及交聯)、及聚酿胺i2i〇(非交聯及交聯)之變體 ,(異形物)可再結合基於可回收再生原料之生態環境論點,因為蓖 蔴油不僅是生產PA 11單體之起始基材,而且也是生產癸二酸(癸 烷一酸)及癸烧二胺用起始基材,這些單體及化合物係用來合成具 有C10二酸及/或Q 〇二胺之聚酿胺。此外,壬二酸(即,⑶二酸) 也可由蓖蔴油衍生’此壬二酸會產生於PA 99或以(M及/或p)AQ{ 9中。 【實施方式】 .本發明更進一步之詳細說明將根據實施例及比較例說明如 下: 很顯然的,在WO 2G_38()21 A2緣中所載列之聚酿胺, 有些是無法滿足做為單背片使用所要求之所有條件的。換句咭 說,譬如,聚醯胺6及聚醯胺66因其所具高吸收性,而無需 ❹ 就穌不予取考慮;又,部絲魏練胺如:聚_ ,因芳香單體為非抗UV性所以也不適合。另一方面,一 f醯胺PA11及雜胺pa 12由於魏點健高於細直 ^造模組之際之疊封層合)溫度稍許而已’故有問題存在。但此 ^上之_可藉交聯舒以改善,脚,可絲麟之A合严 ^而不致於聚醯胺開始流走,此外,藉交聯也 外部使用之施之使轉命。 #滅力即在 之實I列材繼使用於完成下面表一至表四所列實施例及比較例 PA12 :聚酿胺 12(??rcl=1,85), EMS_CHEMIEAG,瑞士 201100493 ?入1010:聚酿胺1010(恥1:=1,92),£以3-(:腿^人0,瑞士 (每一情況之相對黏度7; rel係依下述特定方法測量而得) 抗氧化劑1 :乙烯雙(氧乙烯)雙[3-(5·第三丁基-4-羥基-間甲苯基) ethylene bis(oxyethylene)bis[3-(5-tert-butyl-4-hydroxy- m-tolyl)propi〇nate] 丙酸酯抗氧化劑係以空間位阻齡為主成分 抗氧化劑2 :四(2,-二-第三丁基苯基)-[1,1聯苯]_4,4,-二甲苯基雙膦 酸酯 tetrakis(2,4-di-tert-butylphenyl)-[l, 1 -biphenyl]4,4,-diylbisphosphonite 〇 抗氧化劑係以膦酸酯為主成分 UV吸收劑:Ν<2-乙氧基苯)-Ν,-(2-乙基苯基)乙二醯胺 N-(2-ethoxyphenyl)-N,-(2-ethylphenyl)oxamide UV/熱安定劑:Ν,Ν’-雙-2,2,6,6-四甲基~4_狐啶基-1,3苯二羧醯胺 N,N’ -Bis-2,2,6,6-tetramethyl~4-piperidiny 1-1,3 _ benzoldicarboxamide Ti02 : 二氧化鈦•金紅石型 TMPTMA ·三經曱基丙烧 Q 表一所載之組成之模製配料係使用Wemer u. Pfleiderer廠製 , ZSK 25型雙螺旋擠製機製成。所定之聚酸胺粉與安定劑係一起投 入進料口’二氧化鈦則用侧輪送機喂入該溶融料中’交聯活化劑 -宜使用幫浦喂入進料口後方之尚保持冷溫之區域。 機设>皿度5又疋為上幵坡度最局達27〇°c ’在螺旋速度200 rpm (每分鐘旋轉數),每小時通過量12公斤下運轉。使用後線式製粒 方法製成顆粒’經在80°C下烘乾24小時之後,測定顆粒特性並製 成平板、片。 上述平板係使用柯林實驗室設備(C〇l Hn facility)3300型’具有3〇刪直徑,L/Del=25之3-區螺旋製成。 機筒溫度及模具溫度如表一所載’板片之寬度為3〇〇讓’厚度為 10 201100493 ,_ (=〇. 3mm) ’衝擊-抗張離用 板片依_ 5繼規格_而成。 心主切割將此 it有交聯活化劑之不同僧,藉電子束照射而形成交聯社 電子伏^(百萬 讀===12578/IEG216—1 觸^鐵及赃 風蝕曝露試驗(抗候實驗)係在風雨侵蝕 (e^therometer) CI4000魏置中依下列條件:照射功率〇 5〇 ❹ ❹ ,18分鐘⑻雨)進行完成。黑體溫度65°C ± 3°C, 濕度 65% ± 5%。 抗拉衝擊強度⑽53448)及色差八搬⑽6174)( ) 經測出以做為溫度及抗候性之判斷準則。 相對黏度^ :依照EN is〇 3〇7(調3)規格,對溶解於間一 、!fnreso1)中之〇. 5重量0錄醯胺溶液(即,在10〇ml溶液中 洛有〇.5g之聚醯胺)在溫度25〇c下測量而得,如所定義, W=7?/7/〇 (溶液黏度被除以溶劑黏度)。 θ _(溶解容量率):依照ISO 1133在275t及5kg貞載量下測 1 ’炫化流量指數以單位cm3/10 min表示。 、使用根據先前技術所揭示之PA 612做為比較例(在下表以V1 代表),至於依本發明所做實施例則以耵(相當於以1〇1砭 (PA 1010交聯)及E3 (PA 12交聯)代表之。 表-表示進行此實驗職狀狀簡成分及機械參數。 11 201100493 〔表一〕 實驗 成分 比較例 VI (PA 612) fwt.-%l 實施例1 El (PA 1010) [Wt.-%] I 賣施例2 E2 (PA 1010 v.) [wt.-%] 厂》涵3 E3 (PA 12 v.) [wt.-%l PA 12 85.4 PA 612 88.4 PA 1010 88.4 85.4 TMPTMA 3.0 3.0 抗氧化劑1 0.6 0.6 0.6 0.6 抗氧化劑2 0.2 0.2 0.2 0.2 UV吸收劑 0.5 0.5 0.5 0.5 UV/'熱安定劑 0.3 0.3 0.3 0.3 |Ti02 10.0 10.0 10.0 10.0 MVR [cm3/10minl 150 40 45 90 Hrei [0.5%, m-cresol] 1.799 1.915 1.911 1.874 丨機筒溫度[°C】.’ 210-230 220-245 220-245 210-230 丨_模具溫度[°c] 220-240 240 240 230
表二表示在80°C之爐中儲存時之抗拉衝擊強度及色澤之變化 情形。 〔表二〕 爐中儲存 80°C VI E1 | E2 E3 時間〔小時〕 抗拉衝擊強度 「kJ/m2l 0 33 68 57 41 288 32 52 48 39 750 27 49 38 39 1488 33 45 41 37 2496 28 37 25 40 時間〔小時〕 色 差 0 0 0 0 0 288 1.0 0.7 1.9 1.8 750 3.7 1.5 2.5 3.1 1488 5.2 1.9 3.4 4.1 2496 6.6 2.4 3.9 4.9 表三表示在風雨侵蝕測量儀中進行風钱實驗(抗候實驗)時之抗 拉衝擊強度及色澤之變化。 12 201100493 〔表三〕
❹ 合成黏著力之試,驗: 由各種不同只驗成分製成Μ大小之板#經使用乙主 ,’利用可加熱壓機將其在金屬板間壓縮成為層次構造之聚^ 片。.3麵,加溫 Ο 业-丁「 马先在1〇分鐘内從冑溫加熱至14此,保 ^。二狀。下5々鐘’驗在1Q分鐘内冷卻至室溫,聚酿胺片F1 上方35咖以阻黏紙隔離之。 胺片間 狀片^合板賊城寬2G咖、長155咖之帶 放置一週以調適,ί:0?^62.挪大氣濕度之條件下 片複合次分離度胁24小時之後,對該板 每分鐘ί〇未!片用來夾持在拉力試驗機上’試驗係在 力係以平均下3用以使該複合片材斷離之最高牽引 表四表亍禎此值依本發明之應用是大於40 N/cm〇 片所形成複胺片/太陽電域組用隱片/聚酿胺 13 201100493 〔表四〕 VI E1 E2 E3 聚醯胺板材 (PA 612) (PA 1〇1〇) (PA 1010 交聯) (PA1 交聯 · 48 KnaxrM/cml 平均值 40 74 _______ __53
上述實驗顯示依本發明之各種實施例皆可達成要求,及具有 ,相當於依先前技術W0 2008/138021 A2之比較例Π(ΡΑ 612)顯 =良好之特性與抗力’尤其是,使用ρΑ 1〇1〇及ρΑ 1〇1〇交聯之 、別適宜之不同實施例顯現超過預期之良好結果。 【圖式簡單說明】 無圖 〇 14
Claims (1)
- 201100493 七 甲請專利範圍: 1. 一種光電伏打模組單背片,係由至少一 ’該至少-種聚醯胺係由:有ίίΐ 碑ίΓ合成:=== 酉&胺及胺基羧酸之群’以及其混合物之群; 萨irm610及聚_612除外,且以内酿胺及胺級 酉文為主基材之聚酸胺是交聯結構。2· ^請求項1之光電伏打模組單背片,其中該以二胺及二誠為主 基材之聚酿胺係非交聯或交聯結構。 3. ja5月求項1或2之光電伏打模組單背片,其中除脂族單體外, 還加上含有環脂族單體之聚醯胺,而該環脂族單體係選自包 吕.CHDA(環脂單體衩合環己烧二叛g复)、bac (雙胺基環己 燒)、PACM (4,4’_二胺基二環己基曱烧)、祖⑽(3,3,_二曱基 4,4’二胺基二環已代甲烧)及該環脂族二胺之混合物之群。 4. 如請求項1至3之光電伏打模組單背片,其特徵為,該聚醯胺 係選自包含:聚醯胺4X、交聯聚酿胺4X、交聯聚醯胺9、聚 醯胺99、交聯聚醯胺99、聚醯胺910、交聯聚醯胺910、聚 醯胺1010、交聯聚醯胺1010、交聯聚醯胺11、交聯聚醯胺 12、聚醯胺1010/10 CHDA、交聯聚醯胺1010/10 CHDA、聚 醯胺610/10 CHDA、交聯聚醯胺610/10 CHDA、聚醯胺612/ 10 CHDA、交聯聚醯胺 012/10 CHDA、聚醯胺 910/10 CHDA 、交聯聚醯胺912/10 CHDA、聚醯胺912/10 CHDA、交聯聚 醯胺912/10 CHDA、聚醯胺1012/12 CHDA、交聯聚醯胺 1012/12 CHDA、聚醯胺 1212/10 CHDA、交聯聚醯胺 1212/12 CHDA、聚醯胺1012、交聯聚醯胺1012、聚醯胺1014、交聯 聚醯胺1014、聚醯胺1212、交聯聚醯胺1212、聚醯胺1210、 交聯聚醯胺1210、聚醯胺MACMY、交聯聚醢胺MACMY、 聚醯胺PACMY、交聯聚醯胺PACMY、聚醯胺MACMY/ PACMY、交聯聚醯胺MACMY/PACMY,以及其混合物之群; 15 201100493 f 2代表具有碳原子數12至18 旨族 Y代表具有碳原子9至18個之線性脂族二誠。 5.^t^4之光電伏打触單背片,其巾該_胺伟選自聚 fe胺1010及交聯聚酿胺1010之群。 1 糸、自知 ΙΪίΐ1至5之光電伏打模組單背片,其中該聚酿胺成型配 料尚匕3至>、-種添加劑’該添加劑係選自包含 • W糊、錄倾、熱蝴、水解^、 ·. =舌化劑、阻燃劑、層狀石夕酸盘、填充料、著色強 : V]、黏者媒劑、衝擊強度收良劑及含氟聚合物之群。 曰 〇 7.=求項6之光電伏打模組單背片,其中該白色顏料係二氧化 8·如請求項6或7之光電伏打模組單背片,該單 料且具有至少92%之反射率。 3白色顏 9·-種光,伏打模組單剝之製造方法,該單背係由 LL;?述至少—種聚_為主成分之成型配料成=成, 其特徵在於’該聚醯胺成型配料係經擠製而得,、 具有碳原子數平均絲少8個,鉍 脂族:Ξ及袁脂族單體合成;該料體係選 ❹ ti; 及絲_之群,以及其混合 • 其中聚酿胺610及聚_612除外,且以内酸胺及脸其辦 。酸為主紐之雜胺為交聯結構。 · *及妝基羧 _ 10.如請柄9之规伏打難單f Η之製妨法 =聯之目的’該聚醯胺成齡料在成型之前添=交 古化劑。 11·如請求項10之光電伏打模組單背片之製造方法,兮 其交聯侧利用高能“在】 12.如請求項U之光電伏打模組單料之製造 量照射係由電子照射達成。 ,、甲邊同月匕 16 201100493 13. 如請求項10至12之光電伏打模組單背片之製造方法,其中 該交聯活化劑係選自三甲醇基丙烷三曱丙烯酸酯及三丙烯 基異氰尿酸酯之群。 14. 一種光電伏打模組,係使用依請求項1至8中任一項之光電 伏打模組單背片或依請求項9至13中任一項之方法製得之 光電伏打模組單背片製成者。 201100493 四、指定代表圖: (一) 本案指定代表圖為:第( )圖。 (二) 本代表圖之元件符號簡單說明: 無圖 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:
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EP2275471B1 (de) | 2011-08-31 |
US20100324207A1 (en) | 2010-12-23 |
ES2371319T3 (es) | 2011-12-29 |
ATE522564T1 (de) | 2011-09-15 |
EP2275471A1 (de) | 2011-01-19 |
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