TW201042710A - Method and apparatus for irradiating a semiconductor material surface by laser energy - Google Patents
Method and apparatus for irradiating a semiconductor material surface by laser energy Download PDFInfo
- Publication number
- TW201042710A TW201042710A TW099110779A TW99110779A TW201042710A TW 201042710 A TW201042710 A TW 201042710A TW 099110779 A TW099110779 A TW 099110779A TW 99110779 A TW99110779 A TW 99110779A TW 201042710 A TW201042710 A TW 201042710A
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- Taiwan
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- beam spot
- laser
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Links
- 239000000463 material Substances 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 31
- 230000001678 irradiating effect Effects 0.000 title abstract description 6
- 230000003287 optical effect Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 4
- 239000013590 bulk material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 15
- 230000005855 radiation Effects 0.000 description 9
- 238000001994 activation Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000003909 pattern recognition Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001247287 Pentalinon luteum Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
- Laser Beam Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
201042710 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種藉由一雷射輻射一半導體材料表面的 方法。本發明進一步係關於一種用於輕射一半導體材料表 面的雷射設備。 【先前技術】 熟知半導體材料表面之雷射輻射係用於諸多應用,諸如 非晶矽之熱退火以獲得再結晶、及摻雜物活化。此項技術 藉由實現一極快速熱處理及較淺之加熱區域深度而提供明 顯優於習知加熱製程之優點。 用於半導體應用之習知雷射輻射製程的一般性問題是, 由於熱製程所需要的高能量密度及傳統可用雷射源的低輸 出能量而致使雷射點尺寸遠小於晶粒(亦稱為晶片或裝置) 尺寸。因此,雷射點必須橫越或掃描晶粒以覆蓋整個晶 粒,此導致若干缺點。 如 Current 及 Borland(Technologies New Metrology for Annealing of USJ and Thin Films,16th IEEE International Conference on Advanced Thermal Processing of Semiconductors -RTP2008)所描述且如圖1及圖2所繪示,第一缺點在於:若 雷射點(b)掃描或橫越晶粒(a),則連續雷射點將在晶粒之 某些部分(c)重疊,此導致摻雜物活化速率或深度之不均勻 性及表面品質之不均勻性。 另一缺點在於:若在相同表面區域上需要多個雷射脈 衝,則雷射點以極高重疊性掃描或橫越該表面,以使經處 147413.doc 201042710 理表面區域之各個點上的多個雷射脈衝平均化,此導致有 限生產速率及週期不均勻性(所謂的莫爾圖案 pattern))。 另一個一般性問題在於:用於不同應用類型之晶粒通常 具有不同尺寸,且另外在—些應时,僅需㈣晶粒之若 干部分。熟練人員應熟知,》了能夠以有限重疊性處理不 同晶粒尺寸或晶粒之若干部分,光束點係藉由各種不同尺 ❹ 〇 寸之遮罩予以塑形,由於每次需要另—尺寸時必須 改變及㈣遮罩’故製造靈活性嚴重受限且紅時間可能 相當長。 ^ 為試圖克服上述缺點,W〇〇1/614〇7 (Hawryhik等人# 述-種使用—可變孔隙光闌來界定曝光場尺寸之雷田 叹w 〇 」而,-明顯缺點在於:根據Hawryluk等人,獲得滿意 均勻性所需之雷射光源需為具有多於i 000個空閒模式的一 固態雷射,其並非當前可購得之雷射源。 设定光束點尺寸之另一實例係us 2006/0176920,其中 P-k等人描述一種包括強度圖案調節單元之雷射輻射設 備’該等強度圖案調節單元具有一通孔、一半通孔及一阻 斷區域以藉由調節一帶狀雷射光束之長度而可變地調節其 強度。 考慮到上述雷射輻射製 之雷射輻射方法及設備, 導體材料層以在晶粒内及 私之缺點,明顯需要根據本發明 其作為一第一目的可提供處理半 晶圓内獲得可接受均勻性,同時 147413.doc 201042710 保持可接受之生產速率及製造靈活性的能力。 本發明可使重疊效應及衰減區域減少,此作為第二目 的。 本發明可提供在材料層表面上產生具有靈活影像形狀之 一光束的能力,此作為另一目的。 本發明可提供在較低溫度下輕射且使雷射能量最大化地 轉換為熱的能力’此作為另一目的。 本發明藉由使雷射光束點尺寸可變地匹配於選定區域尺 寸而滿足上述目的。 【發明内容】 本發明係關於-種輪射半導體材料之方法,其包括: -選擇-半導體材料層表面之—區域,該區域具有一區 域尺寸;利用具有一光束點尺寸之一準分子雷射來輕 射该半導體材料層表面之該區域; -及調整該光束點尺寸; 該方法之特徵為調整該光束點尺寸包括使該光束點尺寸 可變地匹配於該選定區域尺寸。 本發明進-步係關於一種用於輻射半導體材料之設備, 其包括: 準刀子雷射’其係用於輻射一半導體材料層表面之 一選定區域,該雷射具有—雷射光束點尺寸且該選定 區域具有一區域尺寸; -及一用於調整該雷射光束點尺寸之構件; 該設備之特徵為該㈣調整該雷射光束點尺寸之構件係 147413.doc 201042710 經調適以使該雷射光束點尺寸可變地匹配於該選定區域 尺寸。 【實施方式】 熟習此項技術者應瞭解根據本發明下文所描述之實施例 僅為闡釋性’而並非限制本發明之預期範疇。亦可考慮其 他實施例。 根據本發明之一第一實施例,提供一種輻射半導體材料 之方法,其包括: © -選擇一半導體材料層表面之一區域,該區域具有一區域 尺寸; -利用具有一光束點尺寸之一準分子雷射來輕射該半導體 材料層表面之該區域; -及調整該光束點尺寸; 該方法之特徵為調整該光束點尺寸包括使該光束點尺寸可 變地匹配於該選定區域尺寸。 ❹ 藉由使該光束點尺寸可變地匹配於該選定區域尺寸,該 方法可因減少重疊效應及衣減區域而在晶粒内及晶圓内提 供可接受之均句性。此外,該方法可藉由在該材料層表面 ,上產生具有靈活形狀及尺寸之一光束點的能力而提供可接 ,受之生產速率及製造靈活性。 半導體材料層可為適於半導體應用之任何材料,諸如 (但不限於)未推雜梦、換雜石夕、植入妙、姓a .. 矽、矽鍺、氮化鍺、III-V化合物半導體(諸如氮化鎵、碳 化矽)及類似物。 147413.doc 201042710 在根據本發明之-實施例中,可藉由改變其影像形成於 材料層表面上之-可變1隙的尺寸及雜而匹g己光束點尺 寸。實際上’此孔隙為-孔或—開σ,雷射光束從中穿過 且該孔或該開口界定光束點在選定區域上之形狀及尺寸。 藉由機械&改變此可變孔隙’〜吏光束點尺寸及/或形狀 匹配於選定區域尺寸及/或形狀。如圖5所繪示,此可變孔 隙可配備有其位置可經可變地調整之葉片。 視所需之光束點精確度而^ ’可能需要精細調整孔隙以 校正不精確度並且使點尺寸與選定區域精確地匹配。可藉 由使用-相機來視覺化材料層表面上之光束點,量測點尺 寸及調整孔隙之開Π尺寸及形狀來執行此精細調整。在一 孔隙配備有葉片之情況下,可精細地調错葉片位置以達到 具有所期望精確度之目標點尺寸。 在根據本發明或與一可變孔隙組合之一替代性實施例 中’可藉由具有可變影像放大倍數之一光學系統而匹配光 束點尺寸。此光學系統經調適以利料變放大倍數而在晶 圓上產生孔隙之影像。 進-步根據本發明,該方法可包括相對於選定區域沿 ΧΥΖ方向對準光束點。 在本發明之—較佳實施射且如圖3所繪示,選定區域 可為至夕整個晶粒。可藉由一雷射脈衝來處理該整個晶 粒。此外’該晶粒可接收多個雷射脈衝,完全覆蓋整個晶 粒。另外亦如圖3所緣示,選定區域可覆蓋多個晶粒。圖4 顯示輻射-或多個整個晶粒可明顯有助於増加晶粒上之均 147413.doc 201042710 勻輻射能量分佈⑷,且有助於減少重叠效應⑷,導致製 程均勻性增加。 根據本發明之—方法可進—步包括在使光束點尺寸匹配 &選疋區域尺寸之前均勻化雷射光束。均勻化雷射光束將 明顯有助於增加製程均勻性。 進v根據本發明,提供一種用於輻射半導體材料之設 備,其包括: 。準刀子雷射,其係用於輻射一半導體層表面之一選定 ° 區域’該雷射具有-雷射光束點尺寸且該選定區域具有 一區域尺寸; -及一用於調整該雷射光束點尺寸之構件; -亥叹備之特徵為該用於調整該雷射光束點尺寸之構件係經 調適以使該雷射光束點尺寸可變地匹配於該選定區域尺 寸。 该準刀子雷射可為其波長、能量及脈衝持續時間經調適 ❹肖於製程之任何準分子雷射,較佳為氯錢準分子雷射。 ^該準分子雷射之波長可在19G奈求至彻奈米之範圍内且 較佳為_奈来,因為在該等波長處石夕能量吸收高。 曰雷射能量可在5焦耳至25焦耳之範圍内。為達成該等能 置,使雷射放電體積最佳化為通常1〇釐米(内部電極間 距)X7董米至_米(放電寬度釐米至200楚米(放電長 度)。 、 脈衡持續時間對應於用於減少摻雜物擴散之快速加熱與 用於減少缺陷形成之相對緩慢冷卻之間的最佳時間,且可 147413.doc 201042710 在100奈秒至1000奈秒之範圍内,較佳為在100奈秒至300 奈秒之範圍内。 、/ 在一較佳實施例中,準分子雷射可經調適以產生大於80 平方楚米(較佳為⑽平方复米)之一大面積輸出光束。、 在另較佳實施例中,準分子雷射可經調適以產生呈有 1焦耳每平方爱米與10焦耳每平方楚米之間 度 一雷射光束。 根據本發明,用Μ π 用於匹配雷射光束點尺寸之構件可包括一 可變孔隙。該可變孔隙不僅可界定光束點尺寸及/或形 狀’亦可透過藉由-高解析度成像系統使此孔隙成像而明 顯有助於獲得清晰影像邊緣(圖4,f),藉此減少衰減區域 及重疊效應。 勺根據本發明,用於匹配雷射光束點尺寸之構件 匕括具有可變影像放大倍數 Κ 先學系統。在如圖6 之此光學系統中,可鲜 U尸/Γ不 了糟由一延遲線而調整一第一透鏡或一 第一群組透鏡(物鏡,第丨群組 ^厂、第一透鏡或第二群組透 鏡(物鏡,第2群組)之間的距離 仗而調整該系統之放大倍 數(通常為自4倍至8倍)。 具有可變影像放大倍數之光^ 尤学系統可與一可變孔隙組合 或不組合地使用。 在本發明之一實施例中, 敕βώιτ 選疋£域上之光束點尺寸可調 1成自1平方髮米至4.5平方❹的矩形形狀。 根據本發明之一設備可進—牛 夕包括用於沿X ΥΖ方向對準 光束點與選定區域之構件。 卞 1474J3.doc •10- 201042710 、較佳地’焦點深度應儘可能長且較佳為大於i⑼微米, 以便無需極精確、複雜及昂貴地沿焦點調整位置。 雷射光束人較敎區域上之角度相對於與半導體材料 層正交之平面可成一角度(通常為5。),以避免離開表面之 反射光被射回光學系統中。 、,根據本發明之-設備可進—步包括定㈣用於調整雷射 光束點尺寸之構件之前的一光束均化器。 根據本發明之一設備可進一步包括一圖案辨識系統。此 圖案辨識系統可包括一相機’該相機係機械地連結至用於 固持半導體材料之-平台且定位於材料層表面上方。在 特定實施例中’來自該相機之影像可經處理以定位在半導 體材料上祕狀若干(通常為3個)對準標記。料對準標 記可提供該半導體材料在該設備座標系統中的精4位置。 根據本發明之設備可用於製得半導體材料或裝置,諸如 (但不限於)CMOS影像感測器及3D記憶體。
Q 關於CMOS影像感測器,本發明之方法及設備對於背面 照明CMOS影像感測器極為有用,其中將光收集於裝置背 面上,而在正面上執行讀出/電荷收集。背面照明需要以 極好均勻性之活化速率及深度來活化背面摻雜物。此外, 活化製程必帛維持極高表面品質以在整㈣測器上維持影 像品質。藉由制本發明之方法及設備,可藉由—個脈衝 輻射-或多個整個感測器之背面,藉此避免重複性地掃描 或橫越且達成所需之感測器均勻性。 根據本發明之一方法的實例 147413.doc -11 · 201042710 步驟〇 :載入晶圓及相對於光束點粗略地定位晶圓 步驟1 :選擇輻射參數: 基於下列選擇輻射參數 -特定晶圓基板上所需之能量密度(例如,2焦耳每平方 釐米) -晶圓上之處理區域的尺寸(XWxYW)(例如’ 18毫米 X 12毫米) -晶圓上待輻射之晶粒相對於一參考位置之座標((Xi, Yi),i = l至N ’其中n為待輻射晶粒之數量)。 步驟2 :調整系統放大倍數: 計算光學系統之放大倍數(G),其將在晶圓上產生最 接近於晶圓上所期望尺寸(XWxYw)之一點尺寸,同 時使孔隙葉片處於其完全打開位置(x〇pen=96毫米,
Yopen-76 毫米)。在此實例中,G=x〇pen/Xw=96/18 = 5.33。 -將延遲線位置調整為一預設定位置(由先前校準決 疋)’其對應於所期望之放大倍率,導致晶圓上之一 點尺寸為96/5.33x72/5.33 = 18毫米χ13_5毫米。亦需要 精細地調整物鏡群組之焦點。 步驟3 :調整遮罩尺寸: -凋整孔隙葉片位置以違成所需光束尺寸。在此實例 中’打開位置中留有兩個垂直葉片(調整X)且調整兩 個水平葉片以連到Y=12毫米,導致晶圓上之一點尺 寸為標稱18毫米χ丨2毫米。 I47413.doc 201042710 -精細地調諧孔隙葉片位置。 步驟4 :相對於待處 了处王心日日®來定位雷射點 -一圖案辨識步驟將相對 丁於日日圓平台座標系統而將3個 對準標記之精確位置定位於晶圓上 移動晶圓平台以使待處理之第—晶粒的位置疊合雷射 點位置。 步驟5 :輻射 Ο ❹ :雷射以所需能量密度輻射第一晶粒。輻射能量係藉 由調整雷射充電電屋及使用光束路徑中之可變衰減哭 而加以控制。 °° _將晶圓平台移動至下一晶粒位置(Xi,Yi)。 -重複H射及移動晶圓平台直至輻射所有待處理之晶粒 為止。 【圖式簡單說明】 圖1繪示—先前技術方法。 圖2繪示另—先前技術方法。 圖3緣示根據本發明之一方法。 圖4繪示根據本發明之—整個晶粒上方的一較佳 量分佈。 财心 圖5繪示一可變孔隙。 圖6緣示具有可變影像放大倍數之一光學系統。 【主要元件符號說明】 a b 晶粒 雷射點 147413.doc 201042710 C 雷射點重疊之部分 e 晶粒上之均勻幸畐射能量分佈 f 清晰影像邊緣 147413.doc -14-
Claims (1)
- 201042710 七、申請專利範圍: 1. 一種輪射半導體材料之方法,其包括: 選擇一半導體材料層表面之一區域,該區域具有一區 域尺寸; 利用具有一光束點尺寸之一準分子雷射來輻射該半導 ; 體材料層表面之該區域; 及調整該光束點尺寸; 該方法之特徵為調整該光束點尺寸包括使該光束點尺 〇 寸可變地匹配於該選定區域尺寸。 2·如請求項1之方法,其中藉由改變其影像形成於該材料 層表面上之一可變孔隙的尺寸及形狀而匹配該光束點尺 寸。 3.如請求項1之方法,其中藉由改變具有可變影像放大倍 數之一光學系統的放大倍數而匹配該光束點尺寸。 4-如請求項1或3之方法,其進一步包括沿χγζ方向使該光 束點與該選定區域對準。 〇 5.如請求項1至4之方法,其中該選定區域為至少一整個晶 粒。 ' 6.如請求項1或5之方法,其進一步包括在使該光束點尺寸 ' 匹配於該選定區域尺寸之前均勻化該雷射光束。 7· 一種甩於輻射半導體材料之設備,其包括: 一準分子雷射,其係用於輻射一半導體材料層表面之 一選定區域’該雷射具有一雷射光束點尺寸且該選定區 域具有一區域尺寸; 147413.doc 201042710 及-用於調整該雷射光束點尺寸之構件; 該設備之特徵為該用於調整該雷射光束點尺寸之構件 係經調適以使該雷制出A 便忒田射先束點尺寸可變地匹配於該選定區 域尺寸。 8. 9. 10. 11. 12. 13. 14. 々月长員7之a又備,其中該準分子雷射係經調適以產生 ”有“、、耳每平方釐米與10焦耳每平方釐米之間的—能 量密度之一雷射光束。 如明求項7至8之設備’其中該用於匹配該雷射光束點尺 寸之構件包括其影像形成於該材料層表面上之一可變孔 隙。 如請求項7至9之設備’其中該用於匹配該雷射光束點尺 寸:構件包括具有可變影像放大倍數之—光學系統。 月长項7至1 〇之设備,其進一步包括用於沿方向 對準該光束點與該選定區域之構件。 如明求項7至1 i之設備,其中該光束點尺寸匹配至少一 整個晶粒。 如月夂項7至12之設備,其進一步包括定位於該用於調 /雷射光束點尺寸之構件之前的一光束均化器。 種如凊求項7至13之設備用於製造半導體材料的用 途。 147413.doc
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EP2239084A1 (en) | 2010-10-13 |
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