201248699 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種非晶膜結晶化裝置及其方法，該 非晶膜結晶化裝置將雷射（laser )光照射至非晶膜 (amorphous film )，依序使側面結晶化。 【先前技術】 於平面顯示器（plat panel display)的基板等中所使用 的半導體薄膜，除了使用非晶膜的半導體薄膜之外，使用 結晶薄膜的半導體薄膜亦已為人所知。關於上述結晶薄 膜’已提出了如下的方法，即，對非晶膜進行退火（anneal) 而使該非晶膜結晶化，藉此來製造上述結晶薄膜。此外， 於專利文獻1或專利文獻2中，已提出了如下的SLS (sequential lateral solidification :依序侧面結晶化）技術， §玄SLS技術是將雷射作為能源，對石夕（siiic〇n)結晶的側 面成長進行引導，從而製造巨大的單結晶石夕。201248699 VI. Description of the Invention: [Technical Field] The present invention relates to an amorphous film crystallization apparatus which irradiates laser light to an amorphous film (amorphous film) ), sequentially crystallization of the side. [Prior Art] A semiconductor film used for a substrate or the like of a plat panel display is known in addition to a semiconductor film using an amorphous film, and a semiconductor film using a crystalline film. In the above-mentioned crystal thin film, a method has been proposed in which an amorphous film is annealed to crystallize the amorphous film, whereby the above-mentioned crystal thin film is produced. Further, in Patent Document 1 or Patent Document 2, the following SLS (sequential lateral solidification) technique has been proposed, and § 玄 SLS technology uses laser as an energy source for Shi Xi (siiic〇n) The side of the crystal grows and guides, thereby producing a huge single crystal stone.
SLS技術是基於如下的現象，該現象是指：矽顆粒 (silicon grain)在液狀石夕與固相矽的邊界面上，朝與該邊 界面垂直的方向成長。適當地對雷射能量（laserene'rg〇) 的強度與雷射光束（laser beam)的掃描範圍的移動進行調 節，使石夕顆粒以規定的長度進行側面成長，藉此，使°曰° 質矽薄膜結晶化。 M 而且，於專利文獻3中已提出了如下的方法，即，當 於先前的裝置中，利用依序侧面結晶化（SLS)方法來二 石夕結晶化時，改善生產效率。 4 201248699 對於專利文獻3所示的裝置而言，為了使上述步驟的 效率提高，如圖6所示’於光學構件中橫向地並排設置有 2個區塊（block) 40、41 ’上述2個區塊40、41包括透射 區域40a、41a與阻斷區域40b、41b，而且，與上述區塊 並排地設置有活性化區域42，該活性化區域42形成有多 個小的四邊形的狹縫（slit) 42a。 於上述光學構件中，雷射光束透過透射區域，雷射光 束無法透過遮蔽區域’該遮蔽區域將光予以吸收而於熱方 面發生變化，藉此，獲得經圖案化的雷射光束。 [先前技術文獻] [專利文獻] [專利文獻1]國際專利公開第97/45827號小冊子 [專利文獻2]韓國專利公開申請案第2001-004129號 說明書 [專利文獻3]日本專利特開2005-5722號公報 如上所述’先前的裝置中所使用的光學構件包含：雷 射光透射區域與雷射光遮蔽區域。雷射光遮蔽區域完全地 將雷射光束予以遮蔽，藉此，可將雷射光透射區域的圖案 (pattern)作為影像，正確地投影至被照射物、即非晶膜。 雷射光遮蔽區域包含：將金屬、即Cr膜或Cr〇膜設 置於石英玻璃（glass)而成的區域等，將射入的雷射光予 以吸收，而將光變為熱，藉此來遮蔽雷射光。因此，存在 如下的問題，即，會產生高溫的熱，且Cr膜或CrO膜會 文到損傷（damage)。又，若於光學構件中產生熱，則會 201248699 產生空氣對流’致使光學構件所產生的圖案影像歪曲。 亦可考慮如下的方法，即，對光學構件進行冷卻，以 防止上述因產生熱而引起的弊端。例如，可考慮將空氣喷 ，至光學構件等祕行冷卻’但縣學構件進行冷卻的空 氣會產生亂流，從而有可能會使圖案影像產生畸變。又， 雖了考慮使用水等的冷卻劑的方法，但存在如下的問題， 即，難以對冷卻劑的流量或因冷卻劑蒸發而產生的蒗氣進 行控制。 【發明内容】 本發明是為了解決如上所述的先前技術的問題而成的 發明，本發明的目的在於：提供如下的非晶膜結晶化裝置 及結晶化方法，該非晶膜結晶化裝置及結晶化方法可不採 用冷卻方法，而使雷射光照射時的上述光學構件中的熱的 產生減少，從而排除由升溫引起的弊端。 亦即，本發明的非晶膜結晶化裝置中，第1發明包括·· 雷射光源’將照射至非晶膜的雷射光予以輸出； 光學系統，將上述雷射光引導至上述非晶膜； 物鏡’構成上述光學系統的一部分，且使照射至上述 非晶膜的雷射光進行集光；以及 光學構件，於上述光學系統的雷射光的光路上，配置 在位於比上述物鏡更靠前段側的位置’且上述光學構件具 有使上述雷射光的一部分透過的雷射光透射區域、及將上 述雷射光的一部分予以遮蔽的雷射光遮蔽區域，藉由上述 雷射光透射區域與雷射光遮蔽區域，來形成影像圖案， 201248699 外 zzoopif 上述光學構件於上述雷射光遮蔽區域中、設置有升 抑制用雷射光驗部，料溫抑_#射歧射部且有: 制尺寸且能触上述雷射光透過，上舰制財比根據上 述物鏡的解析度⑻與物鏡的倍率（Μ)的倒數之 所求出的值（R/M)更小，且上述限制尺寸比上述雷射光 的波長更大。 其中’物鏡的倍率（Μ)是由距離㈤與距離⑷ 之比（b/a)、或非晶膜上的圖案影像尺寸（pat_如喂 S1Ze)⑷與上述光學構件的圖案影像尺寸（D)之比（d/D) 來決定’上述距離⑴是非晶膜與物鏡之間的距離，上述 距離（a)是上述光學構件與物鏡之間的距離。 曰如上述第1發明所述，帛2發明的非晶膜結晶化裝置 是：上述升溫抑_雷射光透射部於上述雷射光的照射面 上具有細條雜，該細條形狀在短寬度側具有上述限制尺 寸。 如上述第1發明或第2發明所述，第3發明的非晶臈 結晶化裝置;I：:上述升溫抑儀雷射光透射部於上述雷射 光的照射面上具有Η形狀，㈣雜以上述限制尺寸作為 直徑。 如上述第1發明〜第3發明中的任一個發明所述，第 4發明的非晶赌晶域置是：上述升溫抑制㈣射光透 射部包含.貫通部位、或域雷射光的透射率相對較高的 部位。 如上述第1發明〜第4發明中的任一個發明所述，第 201248699 5發明的非晶膜結晶化裝置是：上述光學構件包括未被上 述雷射光照射的未照射區域。 如上述第1發明〜第5發明中的任一個發明所述，第 6發明的非晶膜結晶化裝置是：藉由上述雷射光的照射， 來對上述非晶膜進行依序側面結晶化。 第7發明的非晶膜結晶化方法是：經由包括雷射光透 射區域與雷射光遮蔽區域的光學構件來照射雷射光，根據 上述雷射光透射區域與上述雷射光遮蔽區域，利用物鏡來 使透過上述光學構件的圖案的雷射光進行集光、且照射至 非晶膜，而藉由依序側面結晶化來使上述非晶膜結晶化， 上述非晶膜結晶化方法包括： 使照射至上述雷射光遮蔽區域的上述雷射光的一部分 在上述雷射光遮蔽區域内，收縮得比上述物鏡的解析度與 倍率的倒數之乘積更小，且透過上述光學構件，至少將^ 述雷射光的一部分照射至照射區域，該照射區域是透過上 述雷射光透射區域的上述雷射光照射至上述非晶膜時的照 射區域。 根據本發明，對於照射至處於雷射光遮蔽區域的升溫 抑制用雷射光透射部的雷射光而言，雷射光雖透過雷射光 遮蔽區域中的升溫抑制用雷射光透射部的區域，但由於透 過的區域具有比物鏡的解析度與倍率的倒數之乘積更小的 限制尺寸，因此，上述雷射光不會具有充分的能量地照射 至非晶膜上。 物鏡的解析度是可藉由雷射光照射而在非晶膜上，將 8 201248699 4^^3〇pif 光學構件的圖案予以圖案化的最小尺寸。亦即，在SLS方 法的製程中所使用的條件（用於結晶化的能量密度及物鏡 的焦點位置）了 ’不使非晶臈結晶化的最小尺寸（非晶膜 表面換算）。 又，可根據以下的方式來決定物鏡的倍率（M)。 亦即，物鏡的倍率（M) = (非晶膜與物鏡的距離（b)) /(上述光學構件與物鏡的距離（a))，或者 物鏡的倍率（M)=(非晶膜上的圖案影像尺寸⑷） /(光學構件的圖案影像尺寸（D)) 因此，物鏡的倍率會根據光學構件'物鏡、以及非晶 膜的位置1請而有所刊。x，物鏡與光學構件的距離可 由光軸中的物鏡的光心與光學構件表面的距離來表示，物 鏡與非晶蘭距離可由絲巾的物鏡的光‘讀非晶膜表面 的距離來表示。 再者’當升溫抑制用雷射光透射部的區域，不具有比 上述物鏡的解析度與倍率的倒數之乘積更小的尺寸;夺，透 過該區域的雷射光會以具有充分的能量的狀態而照射至非 晶膜，雷射光雜_的魏會受損 制用雷射光透射部具右，丨私.千灶k ^月升/皿抑 干.於面述乘積的限制尺寸，是表 =面方向上的升溫抑_f射光透射部的任-位置， 4方1 (面方向上）均具有小於上述乘積的尺寸。 又’若升溫抑制用雷射光透射部的限制尺寸未呈有大 201248699 面以外。因此’升溫抑制用雷射光透射部 必須具有大於上述雷射光的波長的限制尺寸。 述條件The SLS technique is based on the phenomenon that the silicon grain grows in a direction perpendicular to the interface of the boundary between the liquid phase and the solid phase. Appropriately adjust the intensity of the laser energy (laserene'rg〇) and the scanning range of the laser beam, so that the Shixi particles grow sideways with a predetermined length, thereby making the texture The ruthenium film is crystallized. Further, in Patent Document 3, a method has been proposed in which, in the prior art, the production efficiency is improved by the sequential side crystallization (SLS) method for crystallization. 4 201248699 In the apparatus shown in Patent Document 3, in order to improve the efficiency of the above steps, as shown in FIG. 6, 'two blocks (40, 41') are laterally arranged side by side in the optical member. The blocks 40, 41 include transmissive areas 40a, 41a and blocking areas 40b, 41b, and an activation area 42 is provided alongside the above-mentioned blocks, and the activation area 42 is formed with a plurality of small quadrangular slits ( Slit) 42a. In the above optical member, the laser beam passes through the transmission region, and the laser beam cannot pass through the shielding region. The shielding region absorbs light and changes in the thermal direction, thereby obtaining a patterned laser beam. [Prior Art Document] [Patent Document 1] International Patent Publication No. 97/45827 pamphlet [Patent Document 2] Korean Patent Application Publication No. 2001-004129 (Patent Document 3) Japanese Patent Laid-Open No. 2005- As described above, the optical member used in the prior art includes a laser light transmitting region and a laser light shielding region. The laser light shielding region completely shields the laser beam, whereby the pattern of the laser light transmitting region can be accurately projected onto the object to be irradiated, that is, the amorphous film. The laser light shielding region includes a region in which a metal film, that is, a Cr film or a Cr film, is placed in a glass, and the incident laser light is absorbed to convert the light into heat, thereby shielding the lightning. Shoot light. Therefore, there is a problem that heat of a high temperature is generated, and a Cr film or a CrO film can be damaged. Further, if heat is generated in the optical member, air convection occurs in 201248699, causing the pattern image generated by the optical member to be distorted. It is also conceivable to cool the optical member to prevent the above-mentioned disadvantages caused by heat generation. For example, it is conceivable to spray the air to the secret cooling of the optical member, but the air cooled by the county member may cause turbulence, which may cause distortion of the pattern image. Further, although a method of using a coolant such as water is considered, there is a problem in that it is difficult to control the flow rate of the coolant or the helium gas generated by the evaporation of the coolant. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide an amorphous film crystallization apparatus and a crystallization method, which are crystallization apparatus and crystallization of an amorphous film. The method can reduce the generation of heat in the above-mentioned optical member when the laser light is irradiated without using a cooling method, thereby eliminating the disadvantages caused by the temperature rise. That is, in the amorphous film crystallization apparatus of the present invention, the first invention includes: · a laser light source 'outputs laser light irradiated to the amorphous film; and an optical system that guides the laser light to the amorphous film; The objective lens constituting a part of the optical system and collecting the laser light irradiated onto the amorphous film; and the optical member is disposed on the optical path of the laser light of the optical system on the front side of the objective lens The optical member has a laser light transmitting region that transmits a part of the laser light and a laser light shielding region that shields a part of the laser light, and the laser light transmitting region and the laser light shielding region are Forming an image pattern, 201248699 The above-mentioned optical member is provided with a laser light suppressing portion in the above-mentioned laser light shielding region, and the material temperature is _# 歧 歧 且 且 制 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 射 , , , , , , , , , The ship-to-ship ratio is smaller than the value (R/M) obtained from the resolution of the objective lens (8) and the reciprocal of the objective lens magnification (Μ), and the above limit Larger in size than the wavelength of the laser light. The 'magnification of the objective lens (Μ) is the ratio of the distance (f) to the distance (4) (b/a), or the image size of the pattern on the amorphous film (pat_such as feeding S1Ze) (4) and the image size of the optical member (D) The ratio (d/D) determines that 'the above distance (1) is the distance between the amorphous film and the objective lens, and the above distance (a) is the distance between the optical member and the objective lens. In the amorphous film crystallization apparatus according to the first aspect of the invention, the temperature-increasing-light-emitting light transmitting portion has a thin stripe on the irradiation surface of the laser beam, and the strip shape has the above-described short-width side. Limit the size. The amorphous germanium crystallization apparatus according to the third aspect of the invention, wherein the temperature-increasing laser light transmitting portion has a meandering shape on the irradiation surface of the laser light, and (4) Limit the size as the diameter. According to any one of the first invention to the third aspect of the invention, the amorphous gambling crystal region of the fourth aspect of the invention is characterized in that the temperature rise suppression (four) light-transmitting portion includes a penetration portion or a transmittance of a field laser light. High part. The amorphous film crystallization apparatus according to any one of the first to fourth aspects of the invention of the invention of the present invention, wherein the optical member includes an unirradiated region that is not irradiated with the laser light. In the amorphous film crystallization apparatus according to any one of the first to fifth aspects of the invention, the amorphous film is sequentially crystallized by the irradiation of the laser light. The amorphous film crystallization method according to the seventh aspect of the present invention is characterized in that the laser beam is irradiated through the optical member including the laser light transmitting region and the laser light shielding region, and the objective lens is used to transmit the laser beam according to the laser light transmitting region and the laser light shielding region. The laser light of the pattern of the optical member is collected and irradiated to the amorphous film, and the amorphous film is crystallized by sequential side crystallization, and the amorphous film crystallization method includes: shielding the laser light from the irradiation A part of the laser light in the region is contracted in the laser light shielding region to be smaller than a product of the resolution of the objective lens and the reciprocal of the magnification, and at least a part of the laser light is irradiated to the irradiation region through the optical member. The irradiation region is an irradiation region when the laser light that has passed through the laser light transmitting region is irradiated onto the amorphous film. According to the present invention, the laser light that has been irradiated to the laser beam transmitting portion for suppressing the temperature rise in the laser light shielding region passes through the region of the laser beam transmitting portion for suppressing the temperature rise in the laser light shielding region, but is transmitted through The region has a smaller size than the product of the resolution of the objective lens and the reciprocal of the magnification, and therefore, the above-described laser light is not irradiated onto the amorphous film with sufficient energy. The resolution of the objective lens is the smallest size that can be patterned on the amorphous film by laser light to pattern the pattern of the 8 201248699 4^^3〇pif optical member. That is, the conditions (the energy density for crystallization and the focal position of the objective lens) used in the process of the SLS method have the smallest size (the surface of the amorphous film) which does not crystallize the amorphous germanium. Further, the magnification (M) of the objective lens can be determined in the following manner. That is, the magnification of the objective lens (M) = (the distance between the amorphous film and the objective lens (b)) / (the distance between the optical member and the objective lens (a)), or the magnification of the objective lens (M) = (on the amorphous film Pattern image size (4)) / (Pattern image size (D) of the optical member) Therefore, the magnification of the objective lens will be published according to the position of the optical member 'objective lens and the amorphous film. x, the distance between the objective lens and the optical member can be expressed by the distance between the optical center of the objective lens in the optical axis and the surface of the optical member, and the distance between the objective lens and the amorphous blue can be expressed by the distance of the optical lens of the objective lens of the silk scarf from the surface of the read amorphous film. Further, the region of the laser light-receiving portion for the temperature increase suppression does not have a smaller size than the product of the resolution of the objective lens and the reciprocal of the magnification; the laser light transmitted through the region is in a state of sufficient energy. Irradiation to the amorphous film, the laser light miscellaneous _ will be damaged by the laser light transmission part with right, smuggling. Thousands of stoves k ^ month liter / dish suppression. The size of the product in the face is the table = surface In the direction of the temperature rise, the position of the light transmitting portion is four-dimensional (in the plane direction), and the size is smaller than the above-described product. Further, the limit size of the laser light transmitting portion for temperature increase suppression is not larger than the 201248699 surface. Therefore, the laser light transmitting portion for temperature rise suppression must have a size larger than the wavelength of the above-described laser light. Condition
糾丄=關於升溫抑制用雷射光透射部具有大於上述雷 射光的波長·制尺寸，這是表示：上舰歡寸滿足I 再者，由於上述物鏡的解析度、雷射光的波長並不一 致’因此，升溫抑制用㈣光透射部所需的限制尺寸亦並 不限定於特定的數值。通常，例示了非㈣上的Μ卿〜 1.0 μπι的尺寸作為所需的限制尺寸。 再者，本發明中的光學構件並不限定於特定的材料， 只要可獲得雷射光騎區域與雷射光遮蔽區域即可，例如 亦可於光學構件表®形細，藉此來形成雷射光遮蔽區域。 雷射光透射區域只要能夠以如下的程度來將能量給予 非晶膜即可，上述程度是指：使雷射光透過，藉由朝向非 晶膜照射雷射光、而進行依序側面結晶化❶雷射光透射區 域可由貫通部位形成，另外，亦可包含透射率相對較高的 部位。 另一方面，雷射光遮蔽區域除了可為不使雷射光透過 的區域之外，亦可為如下的區域，該區域與上述雷射光透 射區域相比較’使雷射光以相對較低的能量透過。亦即， 只要透過雷射光遮蔽區域的雷射光的能量、與透過雷射光 透射區域的雷射光的能量存在差異，且可良好地進行依序 側面結晶化即可。 當雷射光遮蔽區域不使雷射光透過時，本發明的升溫 201248699 ^ZZDOpif 抑制用雷射光透射部於上述雷射光遮蔽區域内，部分地允 許雷射光透過。上述雷射光的透過與雷射光透射區域相比 較，僅會將小能量給予非晶膜。又，當於雷射光遮蔽區域 中，雷射光受到限制地透過時，升溫抑制用雷射光透射部 會使雷射光以比上述雷射光遮蔽區域更高的透射率透過。 然而，升溫抑制用雷射光透射部中的透射雷射光、與透過 雷射光透射區域的雷射光相比較，給予非晶膜的能量明顯 地變小，從而不會妨礙依序側面結晶化。 再者，升溫抑制用雷射光透射部的形狀只要滿足上述 限制尺寸，則並無特別的限定。例如可設為細條形狀，該 細=形狀在短寬度方向上具有上述規定的限制尺寸。當^ 用貫通部位來構成升溫抑制用雷射光透射部時，亦可稱為 狹縫形狀。可使多個上述細條以規定的間隔排列，或縱橫 地並排配置，從而可有效果地抑制光學構件的升溫。只 f，升溫抑制用雷射光透射部的形狀亦可設為圓形 狀，該圓形狀以上述規定的限制尺寸作為直徑。當利用^ 通部位來構成升溫抑制用雷射光透射部時，亦可稱為孔5 狀。使多個上述@]形狀散佈，藉此，可有效果地抑制光级 構件的升溫。亦可將形狀不_升溫抑制用雷射光透射 設置於光學構件。 αι 本發明可較佳地用作SLS結晶化方法及其裝置，兮 結晶化方法及其I置用以製造液晶顯示器（dis ^ :機電激發光（Electroluminescence，EL )顯示器的書 '、開關（switch)、或者驅動電路中所使用的薄膜電晶^ 201248699 (transistor )的多結晶或單結晶半導體膜。 [發明的效果] 曰如以上的說明所述，根據本發明，雷射光以不妨礙結 B曰化的方式，經由光學構件的雷射光遮蔽區域内所設置的 ^溫抑制用雷射光透射部而透射，光學構件中的熱的產生 受^抑制，從而有效果地防止升溫所引起的損傷，使耐久 性提高。又，藉由抑制光學構件中的熱的產生，可防止圖 案影像產生畸變。 【實施方式】 、以下，基於隨附圖式來對本發明的一個實施形態進行 說明。 圖1是表示相當於本發明的非晶膜結晶化裝置的雷射 退火裝置1的概略圖。 雷射退火裝置1包括：載置著基板2的平台（对峨） 3上述基板2形成有非晶石夕膜。而且，上述雷射退火裝置 1包括·Χ移動馬達（mot〇r) 4a，使上述平台3於又軸方丄 丄 关于 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷 雷The temperature limit for suppressing the temperature rise (4) is not limited to a specific value. In general, the size of the Μ 〜 ~ 1.0 μπι on the non-fourth is exemplified as the required size limit. Furthermore, the optical member in the present invention is not limited to a specific material, and as long as a laser light riding area and a laser light shielding area are available, for example, the optical member table can be thinned to form a laser light shielding. region. The laser light transmitting region can be applied to the amorphous film as much as possible to the extent that the laser light is transmitted, and the laser beam is irradiated toward the amorphous film to perform side-side crystallization of the laser light. The transmission region may be formed by a penetration portion, and may also include a portion having a relatively high transmittance. On the other hand, the laser light shielding area may be a region which does not transmit the laser light, and may be a region which is compared with the above-described laser light transmitting region to transmit the laser light with a relatively low energy. That is, as long as the energy of the laser light transmitted through the laser light shielding region is different from the energy of the laser light transmitted through the laser light transmitting region, the sequential side crystallization can be performed satisfactorily. When the laser light shielding region does not transmit the laser light, the temperature rising 201248699 ZZDOpif suppression laser light transmitting portion of the present invention partially allows the laser light to pass through in the above-described laser light shielding region. The transmission of the above-described laser light is compared to the area in which the laser light is transmitted, and only a small amount of energy is supplied to the amorphous film. Further, when the laser light is restrictedly transmitted in the laser light shielding region, the laser beam transmitting portion for suppressing the temperature rise transmits the laser light at a higher transmittance than the laser light shielding region. However, the transmitted laser light in the temperature-increasing suppression laser light transmitting portion is significantly smaller in energy imparted to the amorphous film than in the laser light transmitted through the laser light transmitting region, and does not hinder the sequential side crystallization. Further, the shape of the laser light-receiving portion for suppressing the temperature rise is not particularly limited as long as it satisfies the above-described limit size. For example, it may be a strip shape having a predetermined limit size in the short width direction. When the laser light transmitting portion for suppressing the temperature rise is formed by the through portion, it may be referred to as a slit shape. The plurality of thin strips may be arranged at a predetermined interval or arranged side by side in the vertical and horizontal directions, whereby the temperature rise of the optical member can be effectively suppressed. Only f, the shape of the laser light-receiving portion for suppressing the temperature rise may be a circular shape, and the circular shape may have a diameter as the predetermined limit. When the laser light transmitting portion for suppressing the temperature rise is formed by the portion to be used, it may be referred to as a hole 5 shape. A plurality of the above-mentioned @] shapes are spread, whereby the temperature rise of the light-level member can be effectively suppressed. It is also possible to transmit the laser light having a shape not to suppress the temperature rise to the optical member. Ιι The present invention can be preferably used as a SLS crystallization method and apparatus thereof, a crystallization method and a method for manufacturing a liquid crystal display (dis ^: an electroluminescence (EL) display book, a switch (switch) Or a polycrystalline or single crystal semiconductor film of a thin film electro-crystal ^ 201248699 (transistor ) used in a driving circuit. [Effects of the Invention] As described above, according to the present invention, the laser light does not interfere with the junction B. The enthalpy is transmitted through the laser light transmitting portion for suppressing the temperature in the laser light shielding region of the optical member, and the generation of heat in the optical member is suppressed, thereby effectively preventing damage caused by temperature rise. In addition, the pattern image can be prevented from being distorted by suppressing the generation of heat in the optical member. [Embodiment] Hereinafter, an embodiment of the present invention will be described based on the drawings. A schematic view of a laser annealing apparatus 1 corresponding to the amorphous film crystallization apparatus of the present invention is shown. The laser annealing apparatus 1 includes a stage on which the substrate 2 is placed (pair) ) 3 of the substrate 2 is formed with a non-spar Xi film. Further, the laser annealing apparatus 1 comprises a moving motor · Χ (mot〇r). 4A, so that the platform 3 and to axis
向上移動；以及Y移動馬達4b，能夠使上述平台3於Y 軸，向上移動’且X移動驅動II (driver) 5a、γ移動驅 動器5b電性連接於各馬達。各驅動器連接於包含電 (computer)的系、統控制器（system _杜〇1 6 夠對各移動馬達進行控制。 而且’雷射退火蓑置1包括：雷射光源10，該雷射来 源^將規定波長的雷射光衞予以輸出。上述销在處理 之則處於非晶狀態。例如，可使用CGhe咖公司的雷射振 12 201248699Moving upward; and Y moving the motor 4b, the platform 3 can be moved upwards on the Y-axis and the X-drive driver 5a and the gamma-moving drive 5b are electrically connected to the motors. Each driver is connected to a system including a computer (system _ Du Fu 16 to control each mobile motor. And 'the laser annealing device 1 includes: a laser source 10, the laser source ^ The laser beam of the specified wavelength is output. The pin is in an amorphous state during processing. For example, the laser vibration of CGhe Inc. 12 201248699 can be used.
盪器LS2000 ( 1)或LSX315 (波長為3〇8 nm，重複振盪 頻率為300 Hz)作為雷射光源10。然而，對於本發明而;， 雷射光源ίο並不限定於特定的雷射光源。 D 於在雷射光源10中振盪的雷射光10a的照射方向上配 置有衰減器（attenuator) 11 ;於衰減器u的出射方向上設 置有光學系統15’該光學系統15包含：面鏡（mirr〇r)12、 光束整形器13、以及物鏡14等。經由上述光學系統15來 對雷射光10a進行引導，而將該雷射光1〇a照射至基板2 衰減器11使雷射光l〇a衰減，從而將該雷射光丨如調 節為規定的能量。亦可使用可變衰減器作為衰減器u，該 可變衰減器的衰減率可被調整。衰減器丨丨例如是以在矽膜 上達到約600 mJ/cm2-1000 mJ/cm2的能量密度的方式，來 對雷射光10a的衰減率進行調整。 面鏡12使自雷射光源1〇輸出的雷射光1〇a的照射方 向偏向，例如為了使自雷射光源丨〇沿著水平方向輸出'的雷 射光10a照射至形成有石夕膜的基板2，上述面鏡12改變上 述雷射光10a的朝向至垂直方向。 光束整形器13將雷射光10a整形為矩形狀'圓形狀等 的光束剖面形狀。 物鏡14使雷射光l〇a集光、且照射至基板2上的矽膜 表面附近，在光軸中，物鏡14的光心與矽膜表面的距離是 由圖中的b來表示。 又，於雷射光10a的光路上，在物鏡14的入射侧配置 13 201248699 有光學構件2〇，該光學構件2〇包括：雷射光遮蔽區域施 與雷射光透射區域20b ’且藉由上述雷射光透射區域施 與雷射光遮蔽區域20b來形成圖案。光軸中的光學構件2〇 與物鏡14的距離是由圖中的&來表示。 再者，於上述形態中，將矽膜作為處理的對象，本發 明將非晶膜處理為結晶膜，或對結晶膜進行改質處理，本 發明的材料並不限定於矽。 )如圖2 (a)所示，光學構件2〇具有矩形的形狀於 該光學構件20的内側，在面方向上，以使長邊相鄰接的方 式，並排地設置有帶狀的雷射光透射區域2〇a，鄰接的雷 射光透射區域20a之間的間隔為小間隔。光學構件2〇在面 方向上，除了雷射光透射區域2〇a以外，剩餘的區域為雷 射光遮蔽區域20b。 對於本發明而言，上述包括雷射光透射區域2〇a與雷 射光遮蔽區域20b的光學構件20的製造方法並無特別的限 定。例如，可利用使雷射光透過的材料來構成光學構件， 且使用將雷射光透射區域20a的部分予以覆蓋的陰影遮罩 (shadow mask)等，並藉由蒸鍍等來將金屬薄膜包覆於雷 射光透射區域20a以外的區域，藉此，能夠形成雷射光遮 蔽區域20b。又，亦可針對包覆於光學構件表面的金屬薄 膜，在相當於雷射光透射區域20a的區域中，藉由银刻 (etching)等來將金屬薄膜予以除去，藉此，獲得光學構 件20。 於上述實施形態中’利用使雷射光透過的材料來構成 201248699 vyif 光學構件20本體，且於除雷射光透射區域2〇a之外的雷射 光遮蔽區域20b中，形成包含Cr或Cr〇的金屬膜。 而且，如圖3所示，於光學構件20的雷射光遮蔽 20b中，以沿著雷射光透射區域2〇a的端緣的方式，隔 間隔而縱橫地排列有細寬度的升溫抑制用雷射光透= 21。於該形態中，升溫抑制用雷射光透射部21的寬度與^ ，抑制用雷射光透射部21之間關隔寬度為大致G 寬度，此’於雷射光遮蔽區域施中，升溫抑制 光透射部21的總面積與該升溫抑_ f射光透射部 外的總面積各約為1/2。 制用雷射光透射部21的寬度，小於物鏡 = 所說明的物鏡的倍率㈤的倒數之乘積 (R/M)H升溫抑㈣雷射光 雷射光10a的波長。於神能* h i日7歧大於 透射部21的寬度例如超過^射、^升^抑制用雷射光 宙射先丨加的波長即308 nm。 之比ib/1、物鏡的倍率是由轉⑻與距離（a) 应光與板2上的非晶膜上的圖案影像尺寸⑷ ”先子構件的圖案影像尺寸（D)之比（d/D)來決定， 上述距離（b)是基板2 }沾并Β β 、 的非日日膜與物鏡14之間的距離， 光件2G與物鏡14 ^⑽距離。可於 无轴上’對各距離造杆辣伸 設為光心。 仏，且將物鏡14中的距離的基點 接著，對雷射退火農 雷射光10a自雷射光 置1的動作進行說明。 源10輸出。於該實施形態中，將 15 201248699 具有308 nm的波長的準分子雷射（excimeriaser)光予以 輸出。雷射光10a因衰減器η而被調節為適合於矽的結晶 化的月b量，接著因面鏡12而偏向，然後射入至光束整形器 13。於光束整形器13中，上述雷射光1〇a形成為所期望的 光束剖面形狀。例如，整形為長軸125 mm、短軸6 mm的 光束剖面形狀。 經由光束整形器13的雷射光i〇a到達光學構件2〇， 雷射光10a經由雷射光透射區域2〇a的形狀、配置而成的 圖案來進行圖案化，接著雷射光1〇a到達物鏡14。雷射光 l〇a在透過物鏡14時進行集光，從而以規定的圖案影像而 照射至基板2上的矽膜。可改變光學構件20的位置，將雷 射光10a以規定的圖案影像而照射至基板2上的矽膜，藉 此，能夠進行依序側面結晶化。又，藉由上述又移動馬達 4a、Y移動馬達4b來使平台2 一面以間距（pitch)傳送、 且一面移動，藉此，可將雷射光1〇a與矽膜的相對位置予 以變更。 再者，於物鏡14與基板2之間存在未圖示的光閘 (shutter) ’該光閘用以在未塗佈有石夕（非晶石夕）膜的基板 的端面，將雷射光予以阻斷。將光閘配置於物鏡14的後方 的理由如下所述。 根據雷射光10a是否通過物鏡μ，會產生溫度變化， 從而戈到物鏡14的焦點移位（f〇cus也浪）等的影響。即 使在光閘為關閉的狀態下，藉由使雷射光l〇a通過物鏡 14 ,而能夠緩和上述影響。在光閘中，設置有傾斜45。的 201248699 面鏡’可不朝向光學系統進行反射，而是朝向未圖示的光 束集堆（beam dump)以消耗雷射光i〇a的能量。 圖2 (b)是表示被雷射光i〇a照射的雷射光透射區域 20a的周邊的圖，該圖2(b)圖示了光學構件2〇的一部分。 再者，由於裝置的振動或雷射光l〇a的位置的擺動， 而不能以與雷射光透射區域2〇a相匹配的尺寸，使雷射光 10a射入至光學構件2〇。因此，雷射光1〇a會整形得比圖 案尺寸更大、而射入至光學構件2〇，故而不僅雷射光1〇a 會射至雷射光透射區域2〇a之間的雷射光遮蔽區域 2〇b’而且雷射光10a亦會照射至雷射光透射區域2〇a的周 圍，從而產生高溫。又，於雷射光遮蔽區域2〇b中，未被 雷射光照射的區域亦可為非照射區域。 於先前的光學構件中，如圖7所示，尤其處於雷射光 透射區域20a的周圍的雷射光遮蔽區域2〇b的一部分的溫 度特別高，隨著時間的經過，容易產生損傷。又，即便於 產生損傷之前，亦會產生空氣對流，光學構件2〇所產生 圖案影像會受損。 ' 另一方面，於上述實施形態的光學構件2〇中，在原本 的雷射光遮蔽區域20b中，I/2的面積成為升溫抑制用 射光透射部21，當雷射光10a照射至該部分時，加熱受 抑制。藉此，整個光學構件20的升溫變小。 ‘、、又1 如上所述，根據上述實施形態，使光學構件2〇的雷 光遮蔽區域20b的金屬部分達到最小限度，藉此，可抑、 熱的產生，因此，可使光學構件20的損傷減少。而且， 17 201248699 將光學構件20的圖案正確地投影至非晶矽膜。 再者’作為設置於光學構件的雷射光遮蔽區域的升溫 抑制用雷射光透射部，並不限定於上述細寬度形狀等，口 要滿足本發__尺柏财1上述升溫抑制用雷ς 光透射部的形狀並不限定於該特定的形狀。 圖5是表示其他形態的光學構件30的圖，與上述實施 =樣地，該光學構件30包括··雷射光透射區二:施 ί 。於光學構件3〇中，代替升溫抑制用 ::先透射部Η ’使圓形的升溫抑制用雷射光透射部31 f於雷射光遮蔽區域施，升溫抑制用雷射光透射部Μ ^直，小於物鏡14的解析度，且大於雷射光H)a的波長。 雷射光透射部3〇a與雷射光遮蔽區域鳥的剩 餘部分的合計面積大致相同。 蔽二3== ’當照射雷射光_時，雷射光遮 ίίί:的產生亦受到抑制，從而防止產生由光 學構件3〇升溫引起的損傷，或防止圖案影像產生畸變 圖式簡單說明】 圖 置的概^表示本㈣的，罐的非晶膜結晶化裝 圖2同樣是麵料齡的平面圖。 圖3同樣，表示光學構件的放大平面圖。 關係：同樣疋表不光學構件、物鏡、以及非晶膜的位置 201248699 H-z.z.jupif 圖5同樣是表示光學構件的變更例的放大平面圖。 圖6是表示先前的光學構件的平面圖。 圖7是對先前的光學構件中的由雷射光照射引起的損 傷狀態進行說明的圖。 【主要元件符號說明】 1 :雷射退火裝置 2 :基板 3 :平台 4a : X移動馬達 4b : Y移動馬達 5a : X移動驅動器 5b : Y移動驅動器 6:系統控制器 10 :雷射光源 l〇a :雷射光 11 :衰減器 12 :面鏡 13 :光束整形器 14 :物鏡 15 :光學系統 20 :光學構件 20a :雷射光透射區域 20b :雷射光遮蔽區域 19 201248699 21、31 :升溫抑制用雷射光透射部 30 :光學構件 30a :雷射光透射區域 30b :雷射光遮蔽區域 40、41 :區塊 40a、41a :透射區域 40b、41b :阻斷區域 42 :活性化區域 42a :狹縫 a、b :距離 d、D :圖案影像尺寸The LS2000 (1) or LSX315 (wavelength 3 〇 8 nm, repetitive oscillation frequency 300 Hz) is used as the laser light source 10. However, for the present invention; the laser source ίο is not limited to a particular laser source. D is provided with an attenuator 11 in the irradiation direction of the laser light 10a oscillating in the laser light source 10; and an optical system 15' is provided in the emission direction of the attenuator u. The optical system 15 includes: a mirror (mirr 〇r)12, beam shaper 13, and objective lens 14 and the like. The laser light 10a is guided via the optical system 15 described above, and the laser light 1〇a is irradiated onto the substrate 2 attenuator 11 to attenuate the laser light l〇a, thereby adjusting the laser light to a predetermined energy. A variable attenuator can also be used as the attenuator u, and the attenuation rate of the variable attenuator can be adjusted. The attenuator 调整 adjusts the attenuation rate of the laser light 10a by, for example, achieving an energy density of about 600 mJ/cm 2 - 1000 mJ/cm 2 on the ruthenium film. The mirror 12 deflects the irradiation direction of the laser light 1〇a output from the laser light source 1〇, for example, to irradiate the laser light 10a output from the laser light source 水平 in the horizontal direction to the substrate on which the stone film is formed. 2. The mirror 12 changes the orientation of the laser light 10a to the vertical direction. The beam shaper 13 shapes the laser light 10a into a beam shape such as a circular "circular shape". The objective lens 14 collects the laser light l〇a and irradiates it to the vicinity of the surface of the ruthenium film on the substrate 2. In the optical axis, the distance between the optical center of the objective lens 14 and the surface of the ruthenium film is indicated by b in the figure. Further, on the optical path of the laser light 10a, on the incident side of the objective lens 14, 13 201248699 has an optical member 2A including a laser light shielding region to which the laser light transmitting region 20b' is applied and by the above-described laser light The transmission region is applied with the laser light shielding region 20b to form a pattern. The distance between the optical member 2 中 in the optical axis and the objective lens 14 is indicated by & in the figure. Further, in the above embodiment, the ruthenium film is treated as a target, and the amorphous film is treated as a crystal film or the crystal film is subjected to a modification treatment, and the material of the present invention is not limited to ruthenium. As shown in FIG. 2(a), the optical member 2'' has a rectangular shape inside the optical member 20, and strip-shaped laser light is arranged side by side in such a manner that the long sides are adjacent to each other in the plane direction. The transmission area 2〇a and the interval between the adjacent laser light transmitting areas 20a are small intervals. The optical member 2 is in the plane direction except for the laser light transmitting region 2a, and the remaining region is the laser light shielding region 20b. In the present invention, the above-described method of manufacturing the optical member 20 including the laser light transmitting region 2a and the laser light shielding region 20b is not particularly limited. For example, an optical member can be formed by using a material that transmits laser light, and a shadow mask or the like that covers a portion of the laser light transmitting region 20a can be used, and the metal film can be coated by vapor deposition or the like. A region other than the laser light transmitting region 20a, whereby the laser light shielding region 20b can be formed. Further, the metal film coated on the surface of the optical member may be removed by etching or the like in a region corresponding to the laser light transmitting region 20a, whereby the optical member 20 may be obtained. In the above embodiment, the body of the 201248699 vyif optical member 20 is formed by a material that transmits laser light, and a metal containing Cr or Cr〇 is formed in the laser light shielding region 20b excluding the laser light transmitting region 2A. membrane. Further, as shown in FIG. 3, in the laser beam shielding 20b of the optical member 20, the laser beam for suppressing the temperature increase of the narrow width is arranged vertically and horizontally along the edge of the laser light transmitting region 2a. Translucent = 21. In this aspect, the width of the laser light-receiving-suppressing laser light-transmissive portion 21 and the separation width of the laser light-receiving portion 21 for suppression are substantially G width, and this is applied to the laser light-shielding region, and the temperature-increasing light-transmitting portion is applied. The total area of 21 and the total area outside the temperature-increasing portion are about 1/2. The width of the laser light transmitting portion 21 is smaller than the product of the inverse of the objective lens = the magnification of the objective lens (5) (R/M)H, and the temperature of the laser light 10a is increased. The width of the transmissive portion 21 is greater than the width of the transmissive portion 21, for example, 308 nm, which is the wavelength at which the laser beam is first applied. The ratio ib/1, the magnification of the objective lens is the ratio of the rotation (8) and the distance (a) to the pattern image size (4) on the amorphous film on the plate 2 (4) "pattern image size (D) of the precursor member (d/) D), the distance (b) is the distance between the non-day film and the objective lens 14 of the substrate 2 } and Β β , and the distance between the optical member 2G and the objective lens 14 ^ (10) can be The distance from the beam is set to the center of the light. 仏, and the base point of the distance in the objective lens 14 is followed by an operation of setting the laser annealing light 10a from the laser light by 1. The source 10 is output. Excimer laser light having a wavelength of 308 nm is output at 15 201248699. The laser light 10a is adjusted by the attenuator η to a monthly b amount suitable for crystallization of germanium, and then deflected by the mirror 12 Then, it is incident on the beam shaper 13. In the beam shaper 13, the above-described laser light 1a is formed into a desired beam profile shape, for example, a beam profile shape of a long axis of 125 mm and a short axis of 6 mm. The laser light i 〇 a via the beam shaper 13 reaches the optical member 2 〇, and the laser light 10 a passes through The shape of the laser light transmitting region 2〇a and the arranged pattern are patterned, and then the laser light 1〇a reaches the objective lens 14. The laser light l〇a is collected while passing through the objective lens 14 to form a predetermined pattern image. By irradiating the ruthenium film on the substrate 2, the position of the optical member 20 can be changed, and the laser light 10a can be irradiated onto the ruthenium film on the substrate 2 with a predetermined pattern image, whereby the side surface crystallization can be performed. By moving the motors 4a and Y and moving the motor 4b, the stage 2 is moved by a pitch and moved, whereby the relative position of the laser light 1〇a and the diaphragm can be changed. A shutter (not shown) is present between the objective lens 14 and the substrate 2. The shutter is used to block the laser light on the end surface of the substrate on which the stone coating is not applied. The reason why the shutter is disposed behind the objective lens 14 is as follows. Depending on whether or not the laser beam 10a passes through the objective lens μ, a temperature change occurs, so that the focus of the objective lens 14 is shifted (f〇cus is also a wave) or the like. With the shutter closed, by By making the laser light l〇a pass through the objective lens 14, the above influence can be alleviated. In the shutter, the 201248699 mirror which is provided with the inclination 45 can be reflected toward the optical system without being reflected toward the optical system (beam). Dump) to consume the energy of the laser light i〇a. Fig. 2(b) is a view showing the periphery of the laser light transmitting region 20a irradiated by the laser light i〇a, and Fig. 2(b) illustrates the optical member 2〇 Further, due to the vibration of the device or the swing of the position of the laser light l〇a, the laser light 10a cannot be incident on the optical member 2〇 at a size matching the laser light transmitting region 2〇a. Therefore, the laser light 1〇a is shaped larger than the pattern size and is incident on the optical member 2〇, so that not only the laser light 1〇a is incident on the laser light shielding region 2 between the laser light transmitting regions 2〇a. 〇b' and the laser light 10a is also irradiated to the periphery of the laser light transmitting region 2a, thereby generating a high temperature. Further, in the laser light shielding region 2〇b, the region not irradiated with the laser light may be a non-irradiation region. In the prior optical member, as shown in Fig. 7, the temperature of a portion of the laser light shielding region 2〇b particularly around the laser light transmitting region 20a is particularly high, and damage is likely to occur as time passes. Further, even before the damage occurs, air convection occurs, and the image image generated by the optical member 2 is damaged. On the other hand, in the optical member 2A of the above-described embodiment, in the original laser light shielding region 20b, the area of I/2 is the light-emission suppression light-transmitting portion 21, and when the laser light 10a is irradiated to the portion, Heating is inhibited. Thereby, the temperature rise of the entire optical member 20 becomes small. Further, as described above, according to the above embodiment, the metal portion of the lightning shielding region 20b of the optical member 2 is minimized, whereby heat generation can be suppressed, so that the optical member 20 can be damaged. cut back. Moreover, 17 201248699 correctly projects the pattern of the optical member 20 onto the amorphous germanium film. In addition, the laser light-transmitting portion for suppressing the temperature rise of the laser light shielding region provided in the optical member is not limited to the above-described thin-width shape, and the mouth is required to satisfy the above-described temperature-reducing thunder light of the present invention. The shape of the transmissive portion is not limited to this specific shape. Fig. 5 is a view showing another embodiment of the optical member 30. The optical member 30 includes the laser light transmitting region 2: ί. In the optical member 3A, instead of the temperature rise suppression: the first transmission portion Η', the circular temperature-increasing suppression laser light transmitting portion 31f is applied to the laser light shielding region, and the temperature-increasing suppression laser light transmitting portion is , straight, smaller than The resolution of the objective lens 14 is greater than the wavelength of the laser light H)a. The total area of the laser light transmitting portion 3a and the remaining portion of the bird in the laser light shielding area is substantially the same.遮二3== 'When the laser light _ is irradiated, the generation of the laser light is also suppressed, thereby preventing the damage caused by the temperature rise of the optical member 3, or preventing the pattern image from being distorted. The general figure of (4), the amorphous film of the can is crystallized, and Fig. 2 is also a plan view of the age of the fabric. Fig. 3 is also an enlarged plan view showing the optical member. Relationship: The position of the optical member, the objective lens, and the amorphous film is similarly displayed. 201248699 H-z.z.jupif FIG. 5 is an enlarged plan view showing a modified example of the optical member. Fig. 6 is a plan view showing a prior optical member. Fig. 7 is a view for explaining a state of damage caused by irradiation of laser light in the prior optical member. [Main component symbol description] 1 : Laser annealing device 2 : Substrate 3 : Platform 4a : X moving motor 4b : Y moving motor 5a : X moving driver 5b : Y moving driver 6 : System controller 10 : Laser light source l〇 a: laser light 11: attenuator 12: mirror 13: beam shaper 14: objective lens 15: optical system 20: optical member 20a: laser light transmitting region 20b: laser light shielding region 19 201248699 21, 31: thunder for temperature suppression Light-emitting portion 30: optical member 30a: laser light transmitting region 30b: laser light shielding region 40, 41: block 40a, 41a: transmissive region 40b, 41b: blocking region 42: activated region 42a: slit a, b : Distance d, D : pattern image size