CN103081065A - Laser annealing device and laser annealing method - Google Patents
Laser annealing device and laser annealing method Download PDFInfo
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
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- 230000008025 crystallization Effects 0.000 abstract description 47
- 238000002844 melting Methods 0.000 abstract description 11
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- 239000010408 film Substances 0.000 description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
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- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
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- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
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Abstract
The present invention enables uniform crystallization of a semiconductor film by means of laser annealing. The present invention comprises a pulse laser oscillating device for outputting a pulse laser beam, and an optical transmission means for transmitting the pulse laser beam outputted from the pulse laser oscillating device to irradiate onto the semiconductor film. Since the pulse laser beam, which has an effective power density on the irradiated surface of the semiconductor film calculated by the formula of effective power density (J / (sec.cm3)) = pulse energy density (J/cm2) / pulse width (sec) absorption coefficient of semiconductor film (cm-1), is irradiated onto the semiconductor film so as to be in a range of 3 1012 to 1.5 1012, the semiconductor film can be crystallized without inducing abnormal grain growth due to complete melting, and uniform crystals with little variation are obtained.
Description
Technical field
The present invention relates to laser anneal device and the laser anneal method of semiconductor film irradiated with pulse laser to carry out laser annealing.
Background technology
In recent years, liquid crystal display seeks to have the thin-film transistor of the performance that realizes that above-mentioned purpose is required take high-resolution, the high speed that drives frame per second, 3Dization etc. as keyword.In order to improve the performance of thin-film transistor, need to utilize laser degradation with the Si semiconductor membrane crystallization.
In the past, laser anneal device was the device with amorphous silicon (a-Si) crystallization, used the annealing technology that adopts excimer laser.In the excimer laser, the quality of light beam is lower, therefore, light beam can't be contracted to small.Therefore, in conjunction with optical system, behind the light beam that on the XY direction its beam shaping is become the top flat type, use.The excimer laser of normal operation is XeCl(wavelength 308nm), higher to the absorption of a-Si, be about 7nm to the penetration depth of amorphous silicon, very shallow, produce temperature gradient at film thickness direction.Adopt in the annealing technology of excimer laser, utilize this temperature gradient, carry out melting and at the nuclear of the residual crystalline growth in film bottom, carry out crystalline growth take this nuclear as basic point with the Laser output that can not make the complete melting of whole amorphous silicon film.The schematic diagram of this crystallization shown in Fig. 8.
That is, amorphous silicon film 31 irradiated with pulse laser 40 to forming at glass substrate 30 generate melting silicon fiml 32.Carry out crystallization in the process that this melting silicon fiml 32 solidifies recrystallizing, thereby form crystal silicon film 33.
In addition, also propose to have laser anneal method (patent documentation 1), the laser anneal device (patent documentation 2) that uses YAG second harmonic (wavelength 532nm) that uses absorbed layer, the device (patent documentation 3) that uses continuous oscillation laser.
In addition, also have in order to carry out without spot, uniform crystallization and the method for utilizing complicated operation to carry out laser annealing for example, proposes to have the method for using heating platform in the patent documentation 4.In addition, propose to have the method (patent documentation 5,6) that laser is shone at twice.In addition, utilize in addition the laser of other wavelength to solve the example of the problems referred to above, for example, report has the example (non-patent literature 1) of using Mo film absorbed layer and laser diode.In addition, propose to have the method (patent documentation 7) of using GaN class blue semiconductor laser.
The prior art document
Patent documentation
Patent documentation 1: the clear 62-1323311 communique of Japanese Patent Laid-Open
Patent documentation 2: Japanese Patent Laid-Open 2005-294493 communique
Patent documentation 3: Japanese Patent Laid-Open 2010-118409 communique
Patent documentation 4: Japanese Patent Laid-Open 2008-147487 communique
Patent documentation 5: Japanese Patent Laid-Open 2010-103485 communique
Patent documentation 6: Japanese Patent Laid-Open 2001-338873 communique
Patent documentation 7: Japanese Patent Laid-Open 2009-111206 communique
Non-patent literature
Non-patent literature 1:E.P.Donovan, to amorphous Si and the crystallization of Ge and calorimetric research (the Calorimetric studies of crystallization and relaxation ofamorphous Si and Ge prepared by ionimplantation) .J.Appl.Phys. of relaxation that forms by Implantation, Vol.57, pp.1795-1804,1985.
Summary of the invention
Invent problem to be solved
In the existing XeCl excimer laser annealing device, owing to use above method, therefore, the processing object transient heating that crystallinity is good is to fusing point, thereby for the purpose that prevents from ablating, needs strict control dehydrogenation operation and Laser output, focusing.In addition, owing to carry out a melting, therefore, there is the problem of deterioration in characteristics in the major axis connecting portion of light beam, in the present situation, because of till the restriction of beam sizes can only tackle substrate size G4(730mm * 920mm), thereby there is the problem that is difficult to carry out large-area treatment.In laser annealing, the state of crystallization changes because of the size of Laser output, therefore, in view of the above problems, discloses the method that Laser output is changed in the patent documentation 1, but and fails to solve the problem that major axis connects.
In the patent documentation 3 disclosed devices that use continuous oscillation laser, because the optical system that multiple laser need to be focused on, therefore, the intensity of the energy that each laser oscillator has produces deviation, interference, is difficult to realize high-precision homogenizing.
In addition, use as patent documentation 4 in the method for heating platform, the loss of the pitch time (takt time) of heat tracing cooling is larger, is unsuitable for practicality.In addition, in the patent documentation 5 that laser is shone at twice, the 6 disclosed methods, there is the problem of poor throughput.In addition, solve in the non-patent literature 1 disclosed technology of the problems referred to above at the laser that uses other wavelength, increased the operation of peeling off absorbed layer etc. and so on, be unsuitable for practicality.
In addition, in the method for the patent documentation 7 that uses GaN class blue semiconductor laser, in itself or smelting process, do not change, therefore, this technique only limits to GaN class blue semiconductor laser, thereby output stage is low, industrial inapplicable.
The present invention finishes for the problem that solves above-mentioned technology in the past, its purpose is to provide a kind of laser anneal device and laser anneal method, it is by utilizing the laser that is absorbed by semiconductor film, make the effective power density shown in the application in a certain scope, thereby need not complicated procedures of forming, can be with large-area semiconductor film without spot and crystallization equably.
The technical scheme of dealing with problems and adopting
Namely, in the laser anneal device of the present invention, the 1st the invention is characterized in, comprise the pulsed laser action device of exporting pulse laser and will transmit and shine from the described pulse laser of this pulsed laser action device output optical transmission unit in semiconductor film, with described pulsed laser irradiation in described semiconductor film, so that at the semiconductor film shadow surface, the effective power density that is calculated by following formula is 3 * 10
12To 1.5 * 10
12Scope in.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula)
The 2nd laser anneal device of the present invention is characterised in that, comprising: CW optical laser action device, this CW optical laser action device output continuous laser; Optical transmission unit, this optical transmission unit will transmit from the continuous laser of this CW optical laser action device output and the pulse laser that extracts from this continuous laser, and with this pulsed laser irradiation in semiconductor film; And the pulse laser generation unit, this pulse laser generation unit extracts described continuous laser in the process of described transmission, makes it be approx pulse type, with production burst laser,
In described semiconductor film, so that at the semiconductor film shadow surface, the effective power density that is calculated by following formula is 3 * 10 with described pulsed laser irradiation
12To 1.5 * 10
12Scope in.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula)
The 3rd laser anneal device of the present invention is characterised in that, in the described the 1st or the 2nd the present invention, has the energy adjusting unit of the energy density of adjusting described pulse laser, in this energy adjusting unit, be set with energy density, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
The 4th laser anneal device of the present invention is characterised in that, in described the 3rd the present invention, as described energy adjusting unit, comprise and make pulse laser with the output adjustment unit of the attenuation rate decay of regulation and the attenuator that sees through and the output of adjusting described laser oscillation apparatus, be set with described attenuation rate and described output in this attenuator and the described output adjustment unit, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
The 5th laser anneal device of the present invention is characterised in that, of the present invention in each the described the 1st to the 4th, pulse duration adjustment unit with pulse duration of adjusting described pulse laser, this pulse duration adjustment unit is adjusted the pulse duration of described pulse laser, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
The 6th laser anneal device of the present invention is characterised in that, the described the 1st to the 5th of the present invention in each, described semiconductor film is the Si semiconductor film, and described energy density is 100～500mJ/cm
2, described pulse duration is 50～500n second.
The 7th laser anneal method of the present invention is characterised in that, with pulsed laser irradiation in semiconductor film, carry out in the laser anneal method of laser annealing of this semiconductor film, set pulse energy density and the pulse duration of described pulse laser, so that at shadow surface, the effective power density that is calculated by following formula is 3 * 10
12To 1.5 * 10
12Scope in, will carry out described pulsed laser irradiation after this setting in described semiconductor film.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula)
According to the present invention, shine in semiconductor film to heat fast by the relation that pulse laser is had between suitable energy density, pulse duration, the absorption coefficient, thereby semiconductor film is applied not the fully heat of the degree of melting, can by with existing complete melting, recrystallize the method diverse ways and obtain less homogeneously crystallized of the deviation of particle diameter.In the fused junction crystallization method of existing mode, utilize the SPC(solid state growth method of heating furnace) in, it is large that the deviation of crystal grain becomes.
Next, defined terms among the present invention is carried out following explanation.
Effective power density: 3 * 10
12To 1.5 * 10
12Scope in
By will being set in the proper range by the effective power density that following formula calculates, thereby can anneal to semiconductor film, make it become the less uniform crystal semiconductor film of deviation.If effective power density less than lower limit, then can't fully heat semiconductor film, it is inhomogeneous that crystallization becomes easily.In addition, if effective power density surpasses the upper limit, then semiconductor film generation melting becomes inhomogeneous crystallization.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula)
In addition, above-mentioned effective power density defines in the present invention, does not represent general physical property.
The pulse laser wavelength zone
In the present invention, shine in the wavelength region may of the pulse laser of semiconductor film and be not limited to specific wavelength region may.Yet, if utilize for semiconductor film particularly the pulse laser that absorbs in the wavelength region may preferably of amorphous silicon film set, carry out the irradiation of pulse laser, then semiconductor film is directly heated, thereby can effectively heat, need not on the upper strata of semiconductor film indirect laser absorption layer to be set.In addition, if though for the semiconductor film amorphous silicon film wavelength that has absorption to see through particularly, then because of the multipath reflection from lower floor, greatly depend on the deviation of the thickness of silicon lower floor for the absorptivity of semiconductor film.Based on these aspects, the wavelength region may of 308～358nm of preferred ultraviolet region.
Energy density
By the pulse laser to the suitable energy density of semiconductor film irradiation, thereby semiconductor film changes under the state of incomplete fusion, can make micro-crystallization.If energy density is lower, then effective power density is less, and crystallization is insufficient, or is difficult to crystallization.On the other hand, if energy density is higher, then effective power density becomes excessive, and fusion-crystallization occurs, or ablation (ablation).As the present invention, if effective power density in suitable scope, then energy density is not particularly limited, but can be expressed as preferred 100～500mJ/cm
2Scope.
Pulse duration
Pulse duration is in order to make effective power density suitably and a key factor of appropriate heating semiconductor film, if pulse duration is too small, then effective power density increases, and semiconductor film is heated to the temperature of complete melting, is difficult to carry out uniform crystallization.In addition, if pulse duration is excessive, then effective power density reduces, and sometimes can't be heated to the temperature of crystallization.As the present invention, if effective power density in suitable scope, then pulse duration is not particularly limited, but can be expressed as preferred 50～500n scope of second.
The shadow surface shape of pulse laser is not particularly limited, and for example can be point-like, wire is shone in semiconductor film.
Be in the situation of wire, the minor axis width that preferably makes described pulse laser is below the 0.5mm.By making pulse laser carry out relative scanning along the minor axis Width, thereby can carry out local irradiation, heating to semiconductor film, and the crystallization that carries out large zone is processed.Yet, if the minor axis width is excessive, in order to carry out efficient crystallization, must improve sweep speed, installation cost increases.
By making described pulse laser carry out relative scanning to amorphous film, thereby can make described semiconductor film carry out crystallization along the face direction.This scans removable pulse laser side, also removable amorphous film side, also removable both sides.
In addition, the present invention can use the fixed laser light source of output pulse laser, exports the pulse laser of required wavelength region may, can utilize the good LASER Light Source of maintainability to carry out homogeneously crystallized making.In addition, pulse laser also can be continuous laser is extracted and to be approx the laser of pulse type.Extraction can use the optical gate (shutter) that carries out mechanicalness High Rotation Speed etc., optical modulator etc. to carry out.
In order to utilize suitable described effective power density to obtain uniform fine crystal, for pulse laser, the utilisable energy adjustment unit is suitably adjusted energy density and is shone in semiconductor film.The output of energy adjusting unit capable of regulating laser oscillation apparatus, the energy density that obtains stipulating also can be utilized attenuator to adjusting from the attenuation rate of the laser of laser oscillation apparatus output etc., thereby adjust energy density.For the energy density adjustment of pulse laser, in the situation of using approximate pulse laser, also can before being extracted into pulse type, carry out described energy adjusting.
In addition, obtain uniform fine crystal in order to utilize suitable described effective power density, for pulse laser, available pulse duration adjustment unit is suitably adjusted pulse duration and is shone in semiconductor film.
As the pulse duration adjustment unit, can constitute and comprise pulse laser is divided into the light beam cutting unit of multiple light beams, the light beam synthesis unit that the delay cell that each light beam of being partitioned into postpones and each light beam that will be partitioned into are synthesized.Utilize the setting of the retardation in the delay cell, can make impulse waveform become suitable shape.Delay cell can change retardation by adjusting optical path length.
For example, will be imported respectively by the laser that above-mentioned light beam cutting unit is partitioned into the different optical system of optical path length.Again be directed on the single light path by the light beam after will cutting apart and postpone, thereby make burst length width elongation, capable of regulating impulse waveform.Particularly, utilize the adjustment of the strength ratio when cutting apart and cut apart after the setting of each optical path length, but the paired pulses time waveform suitably changes.
As the pulse duration adjustment, also can be by carrying out overlapping carrying out from the pulse laser of a plurality of LASER Light Source outputs.By with a plurality of pulsed laser irradiations in semiconductor film, finally can obtain required impulse waveform.A plurality of pulse lasers are being carried out when overlapping, phase place that can be by adjusting pulse output or insert delay cell be adjusted to required pulse duration, utilizes these structures to consist of the pulse duration adjustment unit.
By utilizing scanning means to make pulse laser carry out relative scanning for semiconductor film, thereby can obtain fine and uniform crystallization in the large zone of semiconductor film.Set frequency, the minor axis width of pulse laser, the sweep speed of pulse, so that by this scanning, irradiation (shot) number of the same area of semiconductor film is reached stated number, for example 1～10.
Scanning means can be the optical system that imports pulse laser to be moved and device that pulse laser is moved, can also be the device that the base station of configuring semiconductor film is moved.
The invention effect
As mentioned above, according to the present invention because to the semiconductor film irradiated with pulse laser so that by the effective power density shown in the following formula 3 * 10
12To 1.5 * 10
12Scope in, therefore, can make the semiconductor film crystallization and can the abnormal grain growth, can obtain less homogeneously crystallized of deviation.
Description of drawings
Fig. 1 is the schematic diagram of an execution mode of expression laser anneal device involved in the present invention.
Fig. 2 is the schematic diagram of an example of the pulse duration adjustment unit of the same execution mode of expression.
Fig. 3 is the schematic diagram of the laser anneal device of other execution modes of expression.
Fig. 4 is the SEM photo of the crystallization after the laser annealing that represents in the embodiments of the invention.
Fig. 5 is the SEM photo of the crystallization after the laser annealing that represents among the same embodiment.
Fig. 6 is the SEM photo of the crystallization after the laser annealing that represents among the same embodiment.
Fig. 7 is the figure of the effective power density among the same embodiment of expression.
Fig. 8 is the key diagram that the crystallization in the existing laser annealing of expression forms state.
Embodiment
Below, one embodiment of the present invention is described.
Fig. 1 is the figure of the summary of expression laser anneal device 1 of the present invention.
Laser anneal device 1 comprises process chamber 2, comprises the scanning means 3 that can move along the X-Y direction in this process chamber 2, comprises at an upper portion thereof base station 4.Be provided with substrate configuration platform 5 as platform at base station 4.When carrying out annealing in process, amorphous silicon fiml 100 grades are set as semiconductor film at this substrate configuration platform 5.Silicon fiml 100 thickness with 50nm on not shown substrate forms.Can carry out this formation by common method, as the present invention, and be not particularly limited the formation method of semiconductor film.In addition, as the semiconductor film of annealing object, preferred amorphous semiconductor film, but as the present invention, be not limited to amorphous semiconductor film.Also can be the semiconductor film of crystalline, the semiconductor film that crystallization is contained in the part, can be to the upgrading of their applicable laser annealings as crystallization.
In addition, scanning means 3 is by the not shown drivings such as motor, by the action of control part 8 these motor of control described later, to set the sweep speed of scanning means 3.In addition, process chamber 2 is provided with the importing window 6 that imports pulse laser from the outside.
Outer setting at process chamber 2 has pulsed laser action device 10.This pulsed laser action device 10 is made of the excimer laser oscillation device.This pulsed laser action device 10 is connected with the Laser Power Devices 9 that driving voltage is provided, and these Laser Power Devices 9 are connected to control part 8 in controlled mode.According to the instruction of control part 8, Laser Power Devices 9 offer pulsed laser action device 10 with the driving voltage of needs, in this pulsed laser action device 10, with the output of regulation pulse laser are exported.
The pulse laser 15 that carries out impulse hunting and export in this pulsed laser action device 10 is adjusted energy density by attenuator 11 as required.Attenuator 11 is connected to above-mentioned control part 8 in controlled mode, according to the instruction of control part 8, sets the attenuation rate of regulation for.That is, above-mentioned Laser Power Devices 9, control part 8 and attenuator 11 consist of energy adjusting of the present invention unit.Can utilize this energy adjusting unit to adjust, energy density reaches 100～500mJ/cm in the shadow surface of silicon fiml 100 so that be preferably
2
The pulse laser 15 that sees through behind the attenuator 11 carries out beam shaping and deflection etc. by the optical transmission unit 12 that comprises lens, speculum, homogenizer (homogenizer) etc., shines silicon fiml 100 in process chamber 2 by the importing window 6 that is arranged at process chamber 2.Shadow surface shape during irradiation is not particularly limited, but is shaped as such as point-like, toroidal, angular shape, strip etc. by above-mentioned optical transmission unit 12.
In addition, in optical transmission unit 12, also can have pulse duration adjustment unit 13.The summary of this pulse duration adjustment unit 13 is described based on Fig. 2.
In pulse duration adjustment unit 13, dispose the beam splitter (beam splitter) 130 that comprises half-mirror in light path, be divided into and make segment beam 15a carry out 90 degree reflections, the light beam 15b of remainder sees through.That is, beam splitter 130 is equivalent to light beam cutting unit of the present invention.In addition, on the reflection direction of beam splitter 130, become the mode of 45 degree to dispose completely reflecting mirror 131 with incidence angle, on the reflection direction of this completely reflecting mirror 131, become the mode of 45 degree to dispose completely reflecting mirror 132 with incidence angle, on the reflection direction of completely reflecting mirror 132, become the mode of 45 degree to dispose completely reflecting mirror 133 with incidence angle, on the reflection direction of completely reflecting mirror 133, become the mode of 45 degree to dispose completely reflecting mirror 134 with incidence angle.
The rear side of above-mentioned beam splitter 130 is positioned on the reflection direction of completely reflecting mirror 134, with incidence angle 45 degree illumination beams.
The light beam 15a that is undertaken obtaining after 90 degree reflect by beam splitter 130 is carried out 90 degree reflections successively by completely reflecting mirror 131,132,133,134, thereby become the light beam 15c after the delay, arrive the rear side of beam splitter 130, a part is carried out 90 degree reflections, carry out overlapping with light beam 15b with the form that postpones, remaining light beam sees through beam splitter 130 and carries out above-mentioned total reflection, repeats cutting apart in the beam splitter 130.By the light beam after the overlapping delay, thereby in the go forward side by side adjustment of horizontal pulse width of the shaping that the light beam that light beam 15b stresses to fold carries out impulse waveform, advance in light path as pulse laser 150.
In addition, the position by changing each completely reflecting mirror, adjust optical path length, thereby can change the retardation of light beam, can change arbitrarily thus the pulse duration of the pulse laser after overlapping.In addition, also can independently adjust the intensity of the pulse laser after cutting apart.
Utilize the pulse duration adjustment unit, be preferably, pulse duration can be set in the scope of 50～500ns.In addition, as the present invention, also can not have the pulse duration adjustment unit, shine in silicon fiml 100 with the pulse duration of the pulse laser exported.
Shine this pulse laser 150 and the silicon fiml 100 of crystallization is comparatively excellent on the consistent crystallinity of crystalline particle diameter.
In addition, in foregoing, utilization is carried out the adjustment of pulse duration by the pulse duration adjustment unit 13 of adjustment of cutting apart and postponing to carry out pulse duration of pulse laser, but can shine in silicon fiml 100 synchronously by being staggered by the pulse laser of a plurality of pulsed laser action device outputs, adjust pulse duration.
Fig. 3 is the figure of this apparatus structure of expression, below describes.In addition, describe marking same label with the same structure of above-mentioned execution mode.
As shown in Figure 3, laser anneal device comprises process chamber 2, comprises the scanning means 3 that can move along the X-Y direction in this process chamber 2, comprises at an upper portion thereof base station 4.Be provided with substrate configuration platform 5 at base station 4.When carrying out annealing in process, be provided as the silicon fiml 100 of processing object at this substrate configuration platform 5.In addition, scanning means 3 is driven by not shown motor etc., is controlled by control part 8.
Outer setting at process chamber 2 has pulsed laser action device 10.The pulse laser 15 that carries out impulse hunting and export in pulsed laser action device 10 is adjusted energy density by attenuator 11 as required, carry out beam shaping and deflection etc. by the optical transmission unit 12 that comprises lens, speculum, homogenizer etc., shine the silicon fiml 100 in process chamber 2.
The pulsed laser action device 20 that same generation pulse laser 25 is arranged in the outer setting of process chamber 2 in addition.The pulse laser 25 that carries out impulse hunting and export in pulsed laser action device 20 is adjusted energy density by attenuator 21 as required, carry out beam shaping and deflection etc. by the optical transmission unit 22 that comprises lens, speculum, homogenizer etc., shine the silicon fiml 100 in process chamber 2.
In said apparatus, by the whole device of control part 8 controls, and control part 8 is connected with controlled mode and the Laser Power Devices 9 that drive above-mentioned pulsed laser action device 10, the Laser Power Devices 19 that drive above-mentioned pulsed laser action device 20 respectively, and sets each pulsed laser action device 10,20 output.In addition, control part 8 is connected with attenuator 11, attenuator 21 in controlled mode, sets attenuation rate separately.Thereby, Laser Power Devices 9,19, attenuator 11,21 and control part 8 consist of energy adjusting of the present invention unit.
In above-mentioned laser anneal device, as shown in Figure 3, output pulse laser 15 and pulse laser 25 synthesize irradiation at silicon fiml 100.By inciting somebody to action staggering synchronously of pulse laser at this moment, the result can adjust the pulse duration of shining in the pulse laser of silicon fiml 100.
In the pulse laser after adjusting pulse duration, above-mentioned effective power density is arranged on 3 * 10
12To 1.5 * 10
12Scope in, and shine in silicon fiml 100.
In addition, in the respective embodiments described above, be illustrated as the situation of use from the pulse laser of pulsed laser action device output, but also can be with cutting the laser that is approx pulse type from the continuous laser of laser continuous oscillation device output.
Embodiment 1
Next, embodiments of the invention and comparative example are compared and describe.
Utilize the laser anneal device (Fig. 1) of above-mentioned execution mode, carry out utilizing common method to be formed at the experiment of the amorphous silicon membrane 50nm irradiated with pulse laser of glass substrate surface processed.
In this experiment, pulse laser is by the optical transmission unit shaping, so that become rectangle at machined surface, sets that energy density is 8～400mJ/cm on shadow surface for
2, pulse duration is in the scope of 20～600ns, shines the amorphous silicon on substrate.In addition, the absorption coefficient of amorphous silicon film is defined as absorption coefficient=4 π k/ wavelength.
(k: attenuation coefficient is with reference to non-patent literature: D.E.Aspnes and J.B.Theeten, J.Electrochem.Soc.127,1359 (1980))
Utilize the irradiation of above-mentioned pulse laser to heat amorphous silicon, make it be varied to silicon metal.Utilize microscope and SEM photo to estimate and carry out this postradiation film.At the photo of SEM shown in Fig. 4～Fig. 6 (picture replaces using photo).
In addition, below the effective power density of explanation calculates by following formula.In addition, result of calculation shown in Figure 7.In the figure, as the reference data, put down in writing the effective power density in the existing laser annealing.Zero mark is equivalent to following embodiment among the figure, and * mark is equivalent to following comparative example.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula)
(embodiment 1)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 2.0 * 10
12Carry out the irradiation of pulse laser, then shown in photo 1, form even, immaculate crystallization.
(embodiment 2)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 2.7 * 10
12Carry out the irradiation of pulse laser, then shown in photo 2, form even, immaculate crystallization.
(embodiment 3)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 1.8 * 10
12Carry out the irradiation of pulse laser, then shown in photo 3, form even, immaculate crystallization.
(embodiment 4)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 2.5 * 10
12Carry out the irradiation of pulse laser, then shown in photo 4, form even, immaculate crystallization.
(embodiment 5)
If laser oscillation apparatus is used YAG secondary harmonic solid laser device, effective power density is set as 1.6 * 10
12Carry out the irradiation of pulse laser, then shown in photo 5, form even, immaculate crystallization.
(embodiment 6)
If laser oscillation apparatus is used YAG secondary harmonic solid laser device, effective power density is set as 2.4 * 10
12Carry out the irradiation of pulse laser, then shown in photo 6, form even, immaculate crystallization.
(comparative example 1)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 2.0 * 10
13Carry out the irradiation of pulse laser, then shown in photo 7, be formed on the crystallization that there is the different spot of crystalline state in the major axis overlapping portion.When utilizing the XRD(X x ray diffraction) carry out the surface when resolving, carried out melting in whole zone almost.
(comparative example 2)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 3.5 * 10
12Carry out the irradiation of pulse laser, then shown in photo 8, be formed on the crystallization that there is the different spot of crystalline state in the major axis overlapping portion.When utilizing XRD to carry out the surface parsing, be melted about the 3nm of top layer.
(comparative example 3)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 3.1 * 10
12Carry out the irradiation of pulse laser, then shown in photo 9, be formed on the crystallization that there is the different spot of crystalline state in the major axis overlapping portion.When utilizing XRD to carry out the surface parsing, be melted about the 8nm of top layer.
(comparative example 4)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 3.5 * 10
12Carry out the irradiation of pulse laser, then shown in photo 10, be formed on the crystallization that there is the different spot of crystalline state in the major axis overlapping portion.When utilizing XRD to carry out the surface parsing, be melted about the 9nm of top layer.
(comparative example 5)
If laser oscillation apparatus is used YAG secondary harmonic solid laser device, effective power density is set as 3.2 * 10
12Carry out the irradiation of pulse laser, then shown in photo 11, be formed on the crystallization that there is the different spot of crystalline state in major axis minor axis overlapping portion.
(comparative example 6)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 1.4 * 10
12Carry out the irradiation of pulse laser, then shown in photo 12, form the crystallization of global existence spot.
(comparative example 7)
If laser oscillation apparatus is used the XeCl excimer laser, effective power density is set as 1.3 * 10
12Carry out the irradiation of pulse laser, then shown in photo 13, form the crystallization of global existence spot.
(comparative example 8)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 1.4 * 10
12Carry out the irradiation of pulse laser, then shown in photo 14, form the crystallization of global existence spot.
(comparative example 9)
If laser oscillation apparatus is used YAG triple-frequency harmonics solid state laser, effective power density is set as 0.9 * 10
12Carry out the irradiation of pulse laser, then shown in photo 15, form the crystallization of global existence spot.
(comparative example 10)
If laser oscillation apparatus is used YAG secondary harmonic solid laser device, effective power density is set as 0.6 * 10
12Carry out the irradiation of pulse laser, then shown in photo 16, form the crystallization of global existence spot.
(comparative example 11)
If laser oscillation apparatus is used YAG secondary harmonic solid laser device, effective power density is set as 1.4 * 10
12Carry out the irradiation of pulse laser, then shown in photo 17, form the crystallization of global existence spot.
More than, describe the present invention based on above-mentioned execution mode and embodiment, but the invention is not restricted to the content of above-mentioned explanation, only otherwise depart from the scope of the present invention, can carry out suitable change.
Label declaration
1 laser anneal device
2 process chambers
3 scanning means
5 substrates configuration platform
8 control parts
9 Laser Power Devices
10 pulsed laser action devices
11 attenuators
12 optical transmission units
13 pulse duration adjustment units
15 pulse lasers
19 Laser Power Devices
20 pulsed laser action devices
21 attenuators
22 optical transmission units
25 pulse lasers
100 silicon fimls
150 pulse lasers
Claims (7)
1. a laser anneal device is characterized in that, comprising:
The pulsed laser action device, this pulsed laser action device output pulse laser; And
Optical transmission unit, this optical transmission unit will transmit and shine in semiconductor film from the described pulse laser of this pulsed laser action device output,
In described semiconductor film, so that at the semiconductor film shadow surface, the effective power density that is calculated by following formula is 3 * 10 with described pulsed laser irradiation
12To 1.5 * 10
12Scope in,
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula).
2. a laser anneal device is characterized in that, comprising:
The CW optical laser action device, this CW optical laser action device output continuous laser;
Optical transmission unit, this optical transmission unit will transmit from the continuous laser of this CW optical laser action device output and the pulse laser that extracts from this continuous laser, and with this pulsed laser irradiation in semiconductor film; And
The pulse laser generation unit, this pulse laser generation unit extracts described continuous laser in the process of described transmission, makes it be approx pulse type, with production burst laser,
In described semiconductor film, so that at the semiconductor film shadow surface, the effective power density that is calculated by following formula is 3 * 10 with described pulsed laser irradiation
12To 1.5 * 10
12Scope in,
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula).
3. laser anneal device as claimed in claim 1 or 2 is characterized in that,
Have the energy adjusting unit of the energy density of adjusting described pulse laser, in this energy adjusting unit, be set with described energy density, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
4. laser anneal device as claimed in claim 3 is characterized in that,
As described energy adjusting unit, comprise and make pulse laser with the output adjustment unit of the attenuation rate decay of regulation and the attenuator that sees through and the output of adjusting described laser oscillation apparatus, in this attenuator and the described output adjustment unit, be set with described attenuation rate and described output, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
5. such as each described laser anneal device in the claim 1 to 4, it is characterized in that,
Have the pulse duration adjustment unit of the pulse duration of adjusting described pulse laser, this pulse duration adjustment unit is adjusted the pulse duration of described pulse laser, so that the described effective power density that is calculated by described formula is 3 * 10
12To 1.5 * 10
12Scope in.
6. such as each described laser anneal device in the claim 1 to 5, it is characterized in that,
Described semiconductor film is the Si semiconductor film, and described energy density is 100～500mJ/cm
2, described pulse duration is 50～500n second.
7. laser anneal method, this laser anneal method in semiconductor film, to carry out the laser annealing of this semiconductor film, is characterized in that pulsed laser irradiation,
Set pulse energy density and the pulse duration of described pulse laser, so that at shadow surface, the effective power density that is calculated by following formula is 3 * 10
12To 1.5 * 10
12Scope in, will carry out described pulsed laser irradiation after this setting in described semiconductor film,
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2Absorption coefficient (the cm of)/pulse duration (second) * semiconductor film
-1) ... (formula).
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| JP2010-194720 | 2010-08-31 | ||
| JP2010194720 | 2010-08-31 | ||
| PCT/JP2011/067657 WO2012029488A1 (en) | 2010-08-31 | 2011-08-02 | Laser annealing device and laser annealing method |
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| CN103081065A true CN103081065A (en) | 2013-05-01 |
| CN103081065B CN103081065B (en) | 2016-04-27 |
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| JP (1) | JP5578584B2 (en) |
| KR (1) | KR20130100996A (en) |
| CN (1) | CN103081065B (en) |
| SG (1) | SG188277A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104227246A (en) * | 2013-06-05 | 2014-12-24 | 三星显示有限公司 | Laser apparatus and method of irradiating laser beam using the same |
| CN113661561A (en) * | 2019-04-16 | 2021-11-16 | 株式会社日本制钢所 | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
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| JP5922549B2 (en) * | 2012-10-01 | 2016-05-24 | 株式会社日本製鋼所 | Crystal semiconductor film manufacturing method and manufacturing apparatus |
| EP2763159A1 (en) * | 2013-01-30 | 2014-08-06 | University College Cork | Improved low resistance contacts for semiconductor devices |
| JP2014220331A (en) * | 2013-05-07 | 2014-11-20 | 株式会社リコー | Electromagnetic wave irradiation apparatus |
| CN113345806B (en) * | 2021-04-23 | 2024-03-05 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
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Also Published As
| Publication number | Publication date |
|---|---|
| SG188277A1 (en) | 2013-04-30 |
| TW201208798A (en) | 2012-03-01 |
| KR20130100996A (en) | 2013-09-12 |
| JPWO2012029488A1 (en) | 2013-10-28 |
| WO2012029488A1 (en) | 2012-03-08 |
| JP5578584B2 (en) | 2014-08-27 |
| CN103081065B (en) | 2016-04-27 |
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