CN103081065B - Laser anneal device and laser anneal method - Google Patents
Laser anneal device and laser anneal method Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 238000002425 crystallisation Methods 0.000 claims abstract description 53
- 230000008025 crystallization Effects 0.000 claims abstract description 50
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- 238000010521 absorption reaction Methods 0.000 claims abstract description 19
- 230000005540 biological transmission Effects 0.000 claims abstract description 18
- 238000002844 melting Methods 0.000 claims abstract description 14
- 230000008018 melting Effects 0.000 claims abstract description 14
- 230000010355 oscillation Effects 0.000 claims description 25
- 239000000284 extract Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005224 laser annealing Methods 0.000 abstract description 12
- 239000010408 film Substances 0.000 description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 21
- 239000010703 silicon Substances 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007787 solid Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 6
- 238000007493 shaping process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 238000002679 ablation Methods 0.000 description 3
- 230000011218 segmentation Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
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- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
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- 238000005286 illumination Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0613—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams having a common axis
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
- B23K26/0676—Dividing the beam into multiple beams, e.g. multifocusing into dependently operating sub-beams, e.g. an array of spots with fixed spatial relationship or for performing simultaneously identical operations
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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Abstract
The present invention can utilize laser annealing by semiconductor film crystallization equably.Comprise the pulsed laser action device of output pulse laser and the described pulse laser exported from this pulsed laser action device is carried out transmitting and the optical transmission unit irradiated in semiconductor film, by described pulsed laser irradiation in semiconductor film, make at semiconductor film shadow surface, by effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) the effective power density that goes out of this formulae discovery is 3 × 10
12to 1.5 × 10
12scope in, therefore, semiconductor film crystallization can be made and not cause the exaggerated grain growth produced by complete melting, less homogeneously crystallized of deviation can be obtained.
Description
Technical field
The present invention relates to semiconductor film irradiated with pulse laser to carry out laser anneal device and the laser anneal method of laser annealing.
Background technology
In recent years, liquid crystal display for keyword, seeks to have the thin-film transistor of the performance realized needed for above-mentioned purpose with the high speed, 3Dization etc. of high-resolution, driving frame per second.In order to improve the performance of thin-film transistor, need to utilize laser degradation by Si semiconductor membrane crystallization.
In the past, laser anneal device was by the device of amorphous silicon (a-Si) crystallization, used the annealing technology adopting excimer laser.In excimer laser, the quality of light beam is lower, therefore, and cannot by beam constriction to small.Therefore, in conjunction with optical system, on XY direction, its beam shaping is become the light beam of top flat type after use.The excimer laser of general use is XeCl(wavelength 308nm), higher to the absorption of a-Si, the penetration depth to amorphous silicon is about 7nm, very shallow, and film thickness direction produces temperature gradient.Adopt in the annealing technology of excimer laser, utilize this temperature gradient, bottom film, remain the core of crystalline growth so that the Laser output of the complete melting of whole amorphous silicon film can not be made to carry out melting, with this core for basic point carries out crystalline growth.The schematic diagram of this crystallization shown in Fig. 8.
That is, to amorphous silicon film 31 irradiated with pulse laser 40 formed on glass substrate 30, melting silicon fiml 32 is generated.Carry out crystallization in the process that this melting silicon fiml 32 solidifies recrystallizing, thus form crystal silicon film 33.
In addition, the device (patent documentation 3) also propose have the laser anneal method (patent documentation 1) using absorbed layer, the laser anneal device (patent documentation 2) using YAG second harmonic (wavelength 532nm), using continuous oscillation laser.
In addition, also have to carry out without spot, uniformly crystallization and utilize complicated operation to carry out the method for laser annealing, such as, in patent documentation 4, proposing there is the method using heating platform.In addition, propose there is the method (patent documentation 5,6) of being carried out at twice by laser irradiating.In addition, utilize the laser of other wavelength to solve the example of the problems referred to above in addition, such as, report has the example (non-patent literature 1) using Mo film absorbed layer and laser diode.In addition, propose there is the method (patent documentation 7) using GaN class blue semiconductor laser.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open No. Sho 62-1323311 publication
Patent documentation 2: Japanese Patent Laid-Open 2005-294493 publication
Patent documentation 3: Japanese Patent Laid-Open 2010-118409 publication
Patent documentation 4: Japanese Patent Laid-Open 2008-147487 publication
Patent documentation 5: Japanese Patent Laid-Open 2010-103485 publication
Patent documentation 6: Japanese Patent Laid-Open 2001-338873 publication
Patent documentation 7: Japanese Patent Laid-Open 2009-111206 publication
Non-patent literature
Non-patent literature 1:E.P.Donovan, to the crystallization of amorphous Si and Ge formed by ion implantation and calorimetric research (Calorimetricstudiesofcrystallizationandrelaxationofamorp housSiandGepreparedbyionimplantation) .J.Appl.Phys. of relaxation, Vol.57, pp.1795-1804,1985.
Summary of the invention
Invent problem to be solved
In existing XeCl excimer laser annealing device, owing to using above method, therefore, by handling object transient heating good for crystallinity to fusing point, thus for preventing the object of ablation, need strict to control dehydration processes and Laser output, focusing.In addition, owing to carrying out a melting, therefore, there is the problem of deterioration in characteristics in the major axis connecting portion of light beam, in present situation, substrate size G4(730mm × 920mm can only be tackled because of the restriction of beam sizes) till, thus existence is difficult to the problem of carrying out large-area treatment.In laser annealing, the state of crystallization changes because of the size of Laser output, therefore, in view of the above problems, Patent Document 1 discloses the method that Laser output is changed, but also could not solve the problem of major axis connection.
Using in the device disclosed in the patent documentation 3 of continuous oscillation laser, owing to needing the optical system focused on by multiple laser, therefore, the intensity of the energy that each laser oscillator has produces deviation, interference, is difficult to realize high-precision homogenizing.
In addition, use in the method for heating platform as patent documentation 4, the loss of the pitch time (takttime) of heat tracing cooling is comparatively large, is unsuitable for practicality.In addition, in the method disclosed in patent documentation 5,6 of being irradiated at twice by laser, there is the problem of poor throughput.In addition, solve at the laser of other wavelength of use in the technology disclosed in non-patent literature 1 of the problems referred to above, add the operation peeling off absorbed layer etc. and so on, be unsuitable for practicality.
In addition, in the method for patent documentation 7 using GaN class blue semiconductor laser, still smelting process, not change in itself, therefore, this technique is only limitted to GaN class blue semiconductor laser, thus output stage is low, industrially inapplicable.
The present invention completes in order to the problem solving above-mentioned technology in the past, its object is to provide a kind of laser anneal device and laser anneal method, it is by utilizing the laser absorbed by semiconductor film, make the effective power density shown in the application in a certain scope, thus without the need to complicated procedures of forming, can by large-area semiconductor film without spot and equably crystallization.
To deal with problems adopted technical scheme
Namely, in laser anneal device of the present invention, 1st the invention is characterized in, comprise the pulsed laser action device of output pulse laser and the described pulse laser exported from this pulsed laser action device is carried out transmitting and the optical transmission unit irradiated in semiconductor film, by described pulsed laser irradiation in described semiconductor film, make at semiconductor film shadow surface, the effective power density gone out by following formulae discovery is 3 × 10
12to 1.5 × 10
12scope in.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) ... (formula)
The feature of the 2nd laser anneal device of the present invention is, comprising: CW optical laser action device, and this CW optical laser action device exports continuous laser; Optical transmission unit, this optical transmission unit is by the continuous laser exported from this CW optical laser action device and transmit from the pulse laser that this continuous laser extracts, and by this pulsed laser irradiation in semiconductor film; And pulse laser generation unit, this pulse laser generation unit, in the process of described transmission, extracts described continuous laser, makes it approx in pulse type, with production burst laser,
By described pulsed laser irradiation in described semiconductor film, make at semiconductor film shadow surface, the effective power density gone out by following formulae discovery is 3 × 10
12to 1.5 × 10
12scope in.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) ... (formula)
The feature of the 3rd laser anneal device of the present invention is, in the described 1st or the 2nd the present invention, there is the energy adjusting unit of the energy density adjusting described pulse laser, in this energy adjusting unit, be set with energy density, make the described effective power density gone out by described formulae discovery 3 × 10
12to 1.5 × 10
12scope in.
The feature of the 4th laser anneal device of the present invention is, in described 3rd the present invention, as described energy adjusting unit, comprise make pulse laser with the decay of the attenuation rate of regulation and through attenuator and adjust the output adjustment unit of output of described laser oscillation apparatus, be set with described attenuation rate and described output in this attenuator and described output adjustment unit, make the described effective power density gone out by described formulae discovery 3 × 10
12to 1.5 × 10
12scope in.
The feature of the 5th laser anneal device of the present invention is, in described 1st to the 4th any one of the present invention, there is the pulse duration adjustment unit of the pulse duration adjusting described pulse laser, this pulse duration adjustment unit adjusts the pulse duration of described pulse laser, makes the described effective power density gone out by described formulae discovery 3 × 10
12to 1.5 × 10
12scope in.
The feature of the 6th laser anneal device of the present invention is, in described 1st to the 5th any one of the present invention, described semiconductor film is Si semiconductor film, and described energy density is 100 ~ 500mJ/cm
2, described pulse duration is 50 ~ 500n second.
The feature of the 7th laser anneal method of the present invention is, by pulsed laser irradiation in semiconductor film, carry out in the laser anneal method of laser annealing of this semiconductor film, set pulse energy density and the pulse duration of described pulse laser, make at shadow surface, the effective power density gone out by following formulae discovery is 3 × 10
12to 1.5 × 10
12scope in, will the described pulsed laser irradiation after this setting be carried out in described semiconductor film.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) ... (formula)
According to the present invention, irradiate in semiconductor film by making pulse laser have the relation between suitable energy density, pulse duration, absorption coefficient to heat fast, thus apply semiconductor film can not the heat of the degree of melting completely, by with existing complete melting, recrystallize method diverse ways and obtain less homogeneously crystallized of the deviation of particle diameter.Existing mode fused junction crystallization method, utilize the SPC(solid state growth method of heating furnace) in, the deviation of crystal grain becomes large.
Next, following explanation is carried out to defined terms in the present invention.
Effective power density: 3 × 10
12to 1.5 × 10
12scope in
By the effective power gone out by following formulae discovery density is set in proper range, thus can anneal to semiconductor film, become the uniform crystalline semiconductor film that deviation is less.If effective power density is less than lower limit, then fully cannot heat semiconductor film, crystallization easily becomes uneven.In addition, if effective power density exceedes the upper limit, then semiconductor film generation melting, becomes uneven crystallization.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) ... (formula)
In addition, above-mentioned effective power density defines in the present invention, does not represent general physical property.
Pulse laser wavelength region
In the present invention, the wavelength region may of irradiating in the pulse laser of semiconductor film is not limited to specific wavelength region may.But, if utilize, the semiconductor film pulse laser that particularly amorphous silicon film absorbs in good wavelength region may is set, carry out the irradiation of pulse laser, then semiconductor film is directly heated, thus can effectively heat, without the need to arranging indirect laser absorption layer on the upper strata of semiconductor film.In addition, if though for semiconductor film particularly amorphous silicon film have absorption through wavelength, then because of the multipath reflection from lower floor, the absorptivity for semiconductor film depends on the deviation of the thickness of silicon lower floor greatly.Based on these aspects, the wavelength region may of 308 ~ 358nm of preferred ultraviolet region.
Energy density
By irradiating the pulse laser of suitable energy density to semiconductor film, thus semiconductor film changes under the state of incomplete fusion, can make micro-crystallization.If energy density is lower, then effective power density is less, and crystallization is insufficient, or is difficult to crystallization.On the other hand, if energy density is higher, then effective power density becomes excessive, and fusion-crystallization occurs, or ablation (ablation) occurs.As the present invention, if effective power density is in suitable scope, then energy density is not particularly limited, but can be expressed as preferably 100 ~ 500mJ/cm
2scope.
Pulse duration
Pulse duration is to make effective power density suitably and a key factor of appropriate heating semiconductor film, if pulse duration is too small, then effective power density increases, and semiconductor film is heated to the temperature of complete melting, is difficult to carry out uniform crystallization.In addition, if pulse duration is excessive, then effective power density reduces, and sometimes cannot be heated to the temperature of crystallization.As the present invention, if effective power density is in suitable scope, then pulse duration is not particularly limited, but can be expressed as the scope of preferred 50 ~ 500n second.
The shadow surface shape of pulse laser is not particularly limited, such as, can be point-like, wire irradiates in semiconductor film.
When in wire, the short axis width of described pulse laser is preferably made to be below 0.5mm.By making pulse laser carry out relative scanning along short axis width direction, thus local irradiation, heating can be carried out to semiconductor film, and carry out the crystallization process of large regions.But if short axis width is excessive, then in order to carry out efficient crystallization, must improve sweep speed, installation cost increases.
By making described pulse laser carry out relative scanning to amorphous film, thus described semiconductor film can be made to carry out crystallization along direction, face.The removable pulse laser side of this scanning, also removable amorphous film side, also removable both sides.
In addition, the present invention can use the fixed laser light source exporting pulse laser, and the pulse laser of the wavelength region may needed for output, the LASER Light Source that maintainability can be utilized good carries out homogeneously crystallized making.In addition, pulse laser also can be to extract continuous laser and approx in the laser of pulse type.Extraction can use the optical gate (shutter), optical modulator etc. carrying out mechanicalness High Rotation Speed etc. to carry out.
In order to utilize suitable described effective power density to obtain uniform fine crystal, for pulse laser, utilisable energy adjustment unit suitably adjusts energy density and irradiates in semiconductor film.The output of energy adjusting unit adjustable laser oscillation apparatus, obtains the energy density specified, the attenuation rate of attenuator to the laser exported from laser oscillation apparatus also can be utilized to adjust etc., thus adjustment energy density.Energy density for pulse laser adjusts, and when using approximate pulse laser, also can carry out described energy adjusting before being extracted into pulse type.
In addition, in order to utilize suitable described effective power density to obtain uniform fine crystal, for pulse laser, available pulse widths adjustment unit suitably adjusts pulse duration and irradiates in semiconductor film.
As pulse duration adjustment unit, can be configured to comprise light beam synthesis unit pulse laser being divided into the light beam dividing unit of multiple light beams, the delay cell making each light beam be partitioned into carry out postponing and being carried out by each light beam be partitioned into synthesizing.Utilize the setting of the retardation in delay cell, the shape that impulse waveform becomes suitable can be made.Delay cell changes retardation by adjustment optical path length.
Such as, the laser be partitioned into by above-mentioned light beam dividing unit is imported the different optical system of optical path length respectively.By will to split and light beam after postponing is directed in single light path again, thus pulse temporal width is extended, adjustable impulse waveform.Particularly, utilize the setting of the adjustment of strength ratio when splitting and each optical path length after splitting, can paired pulses time waveform suitably change.
As pulse duration adjustment, the pulse laser also by exporting from multiple LASER Light Source carries out overlap to carry out.By by multiple pulsed laser irradiation in semiconductor film, finally can obtain required impulse waveform.When multiple pulse laser is carried out overlap, the phase place exported by adjustment pulse or insertion delay cell, be adjusted to required pulse duration, utilize these Structure composing pulse duration adjustment units.
By utilizing scanning means to make pulse laser carry out relative scanning for semiconductor film, thus fine and uniform crystallization can be obtained at the large regions of semiconductor film.Frequency, the short axis width of pulse laser, the sweep speed of setting pulse, make by this scanning, reaches stated number, such as 1 ~ 10 to irradiation (shot) number of the same area of semiconductor film.
Scanning means can be make the optical system of importing pulse laser move and make the device of pulse laser movement, can also be the device of the base station movement making configuring semiconductor film.
Invention effect
As mentioned above, according to the present invention, due to semiconductor film irradiated with pulse laser, make by the effective power density shown in following formula 3 × 10
12to 1.5 × 10
12scope in, therefore, semiconductor film crystallization can be made and exaggerated grain growth can not occur, less homogeneously crystallized of deviation can be obtained.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the execution mode representing laser anneal device involved in the present invention.
Fig. 2 is the schematic diagram of an example of the pulse duration adjustment unit representing same execution mode.
Fig. 3 is the schematic diagram of the laser anneal device representing other execution modes.
Fig. 4 is the SEM photo of the crystallization after representing the laser annealing in embodiments of the invention.
Fig. 5 is the SEM photo of the crystallization after representing the laser annealing in same embodiment.
Fig. 6 is the SEM photo of the crystallization after representing the laser annealing in same embodiment.
Fig. 7 is the figure of the effective power density represented in same embodiment.
Fig. 8 represents that the crystallization in existing laser annealing forms the key diagram of state.
Embodiment
Below, one embodiment of the present invention is described.
Fig. 1 is the figure of the summary representing laser anneal device 1 of the present invention.
Laser anneal device 1 comprises process chamber 2, comprises and along the scanning means 3 of X-Y direction movement, can comprise base station 4 at an upper portion thereof in this process chamber 2.Base station 4 is provided with substrate configuration platform 5 as platform.When carrying out annealing in process, this substrate configuration platform 5 arranges amorphous silicon fiml 100 grade as semiconductor film.Silicon fiml 100 is formed with the thickness of 50nm on not shown substrate.Carry out this formation by common method, as the present invention, and be not particularly limited the formation method of semiconductor film.In addition, as the semiconductor film of annealing object, preferred amorphous semiconductor film, but as the present invention, be not limited to amorphous semiconductor film.Also can be the semiconductor film of crystalline, the semiconductor film of local containing crystallization, the upgrading of laser annealing as crystallization can be suitable for them.
In addition, scanning means 3, by drivings such as not shown motor, is controlled the action of this motor, to set the sweep speed of scanning means 3 by control part 8 described later.In addition, process chamber 2 is provided with the importing window 6 importing pulse laser from outside.
Pulsed laser action device 10 is had in the outer setting of process chamber 2.This pulsed laser action device 10 is made up of excimer laser oscillation device.This pulsed laser action device 10 is connected with to the Laser Power Devices 9 providing driving voltage, these Laser Power Devices 9 are connected to control part 8 in a controlled manner.According to the instruction of control part 8, the driving voltage of needs is supplied to pulsed laser action device 10 by Laser Power Devices 9, in this pulsed laser action device 10, is exported by pulse laser with the output specified.
Impulse hunting is carried out and the pulse laser 15 exported adjusts energy density by attenuator 11 as required in this pulsed laser action device 10.Attenuator 11 is connected to above-mentioned control part 8 in a controlled manner, according to the instruction of control part 8, is set to the attenuation rate of regulation.That is, above-mentioned Laser Power Devices 9, control part 8 and attenuator 11 form energy adjusting unit of the present invention.This energy adjusting unit can be utilized to adjust, make preferably in the shadow surface of silicon fiml 100 energy density reach 100 ~ 500mJ/cm
2.
Beam shaping and deflection etc. is carried out, the silicon fiml 100 irradiated in process chamber 2 by the importing window 6 being arranged at process chamber 2 by the optical transmission unit 12 comprising lens, speculum, homogenizer (homogenizer) etc. through the pulse laser 15 after attenuator 11.Shadow surface shape during irradiation is not particularly limited, but is shaped as such as point-like, toroidal, angular shape, strip etc. by above-mentioned optical transmission unit 12.
In addition, in optical transmission unit 12, also pulse duration adjustment unit 13 can be had.The summary of this pulse duration adjustment unit 13 is described based on Fig. 2.
In pulse duration adjustment unit 13, light path is configured with the beam splitter (beamsplitter) 130 comprising half-mirror, is divided into and makes segment beam 15a carry out 90 degree of reflections, the light beam 15b of remainder through.That is, beam splitter 130 is equivalent to light beam dividing unit of the present invention.In addition, the reflection direction of beam splitter 130 become the mode of 45 degree to be configured with completely reflecting mirror 131 with incidence angle, the reflection direction of this completely reflecting mirror 131 become the mode of 45 degree to be configured with completely reflecting mirror 132 with incidence angle, the reflection direction of completely reflecting mirror 132 becomes the mode of 45 degree to be configured with completely reflecting mirror 133 with incidence angle, the reflection direction of completely reflecting mirror 133 becomes the mode of 45 degree to be configured with completely reflecting mirror 134 with incidence angle.
The rear side of above-mentioned beam splitter 130 is positioned on the reflection direction of completely reflecting mirror 134, with incidence angle 45 degree of illumination beams.
The light beam 15a obtained after carrying out 90 degree of reflections by beam splitter 130 is totally reflected mirror 131,132,133,134 and carries out 90 degree of reflections successively, thus become the light beam 15c after delay, arrive the rear side of beam splitter 130, a part carries out 90 degree of reflections, carry out overlapping with light beam 15b with the form postponed, remaining light beam carries out above-mentioned total reflection through beam splitter 130, repeats the segmentation in beam splitter 130.Light beam after being postponed by overlap, thus the adjustment of horizontal pulse width of going forward side by side in the shaping that the light beam that light beam 15b stresses to fold carries out impulse waveform, advanced in light path as pulse laser 150.
In addition, by changing position, the adjustment optical path length of each completely reflecting mirror, thus the retardation of light beam can be changed, the pulse duration of the pulse laser after overlap can be changed arbitrarily thus.In addition, the intensity of the pulse laser after segmentation can also independently be adjusted.
Utilize pulse duration adjustment unit, be preferably, can by pulse width set in the scope of 50 ~ 500ns.In addition, as the present invention, also can not have pulse duration adjustment unit, irradiate in silicon fiml 100 with the pulse duration of exported pulse laser.
Pulse laser 150 imports in process chamber 2 by importing window 6, irradiates the silicon fiml 100 on substrate configuration platform 5.Now, utilize scanning means 3 substrate to be configured platform 5 and move together with base station 4, pulse laser 150 carries out relative scanning and irradiates on silicon fiml 100.
For pulse laser 150 now, in order to obtain the effective power density being suitable for crystallization, the irradiation sectional area of the output of setting pulsed laser action device 10, the attenuation rate of attenuator 11, pulse duration, pulse laser, is set to that the effective power density gone out by above-mentioned formulae discovery is 3 × 10
12to 1.5 × 10
12scope in.By the irradiation of this pulse laser 150, make silicon fiml 100 crystallization equably.In addition, the laser absorption rate in silicon fiml 100 is decided by the wavelength of pulse laser, can utilize known information.
The silicon fiml 100 irradiating this pulse laser 150 and crystallization is comparatively excellent in the consistent crystallinity of crystalline particle diameter.
In addition, in foregoing, utilize the adjustment being carried out pulse duration by the segmentation of pulse laser and the pulse duration adjustment unit 13 that postpones to carry out the adjustment of pulse duration, but irradiate in silicon fiml 100 by the pulse laser exported by multiple pulsed laser action device is staggered synchronous, adjust pulse duration.
Fig. 3 is the figure representing this apparatus structure, is below described.In addition, mark same label to be described to the structure same with above-mentioned execution mode.
As shown in Figure 3, laser anneal device comprises process chamber 2, comprises and along the scanning means 3 of X-Y direction movement, can comprise base station 4 at an upper portion thereof in this process chamber 2.Base station 4 is provided with substrate configuration platform 5.When carrying out annealing in process, this substrate configuration platform 5 is provided as the silicon fiml 100 of handling object.In addition, scanning means 3 is driven by not shown motor etc., is controlled by control part 8.
Pulsed laser action device 10 is had in the outer setting of process chamber 2.Impulse hunting is carried out and the pulse laser 15 exported adjusts energy density by attenuator 11 as required in pulsed laser action device 10, carry out beam shaping and deflection etc. by the optical transmission unit 12 comprising lens, speculum, homogenizer etc., irradiate the silicon fiml 100 in process chamber 2.
In addition, the same pulsed laser action device 20 producing pulse laser 25 is had in the outer setting of process chamber 2.Impulse hunting is carried out and the pulse laser 25 exported adjusts energy density by attenuator 21 as required in pulsed laser action device 20, carry out beam shaping and deflection etc. by the optical transmission unit 22 comprising lens, speculum, homogenizer etc., irradiate the silicon fiml 100 in process chamber 2.
In said apparatus, whole device is controlled by control part 8, and control part 8 respectively in a controlled manner with drive the Laser Power Devices 9 of above-mentioned pulsed laser action device 10, drive the Laser Power Devices 19 of above-mentioned pulsed laser action device 20 to be connected, and set the output of each pulsed laser action device 10,20.In addition, control part 8 is connected with attenuator 11, attenuator 21 in a controlled manner, sets respective attenuation rate.Thus, Laser Power Devices 9,19, attenuator 11,21 and control part 8 form energy adjusting unit of the present invention.
In above-mentioned laser anneal device, as shown in Figure 3, export pulse laser 15 and pulse laser 25, silicon fiml 100 carries out synthesis and irradiates.By synchronously staggering pulse laser now, result can adjust the pulse duration of the pulse laser irradiated in silicon fiml 100.
In pulse laser after adjustment pulse duration, above-mentioned effective power density is arranged on 3 × 10
12to 1.5 × 10
12scope in, and to irradiate in silicon fiml 100.
In addition, in the respective embodiments described above, as using the situation of pulse laser exported from pulsed laser action device to be illustrated, but also can use that to be carried out cutting by the continuous laser exported from laser continuous oscillation device be the laser of pulse type approx.
Embodiment 1
Next, embodiments of the invention and comparative example compared and be described.
Utilizing the laser anneal device (Fig. 1) of above-mentioned execution mode, carrying out the experiment to utilizing common method to be formed at the amorphous silicon membrane 50nm irradiated with pulse laser of glass substrate surface.
In this experiment, pulse laser, by optical transmission unit shaping, makes to become rectangle at machined surface, is set to that energy density is 8 ~ 400mJ/cm on shadow surface
2, pulse duration is in the scope of 20 ~ 600ns, irradiates the amorphous silicon on substrate.In addition, the absorption coefficient of amorphous silicon film is defined as absorption coefficient=4 π k/ wavelength.
(k: attenuation coefficient is with reference to non-patent literature: D.E.Aspnes and J.B.Theeten, J.Electrochem.Soc.127,1359 (1980))
Utilize the irradiation of above-mentioned pulse laser to heat amorphous silicon, make it be changing into silicon metal.Utilize microscope and SEM photo to evaluate and carry out this postradiation film.SEM photo (picture replacement photo) shown in Fig. 4 ~ Fig. 6.
In addition, the effective power density below illustrated calculates by following formula.In addition, result of calculation shown in Figure 7.In the figure, as with reference to data, the effective power density in existing laser annealing is described.In figure, zero mark is equivalent to following embodiment, and × mark is equivalent to following comparative example.
Effective power density (J/ (second cm
3))=pulse energy density (J/cm
2absorption coefficient (the cm of)/pulse duration (second) × semiconductor film
-1) ... (formula)
(embodiment 1)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 2.0 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 1, form even, immaculate crystallization.
(embodiment 2)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 2.7 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 2, form even, immaculate crystallization.
(embodiment 3)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 1.8 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 3, form even, immaculate crystallization.
(embodiment 4)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 2.5 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 4, form even, immaculate crystallization.
(embodiment 5)
If use YAG secondary harmonic solid laser device to laser oscillation apparatus, effective power density is set as 1.6 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 5, form even, immaculate crystallization.
(embodiment 6)
If use YAG secondary harmonic solid laser device to laser oscillation apparatus, effective power density is set as 2.4 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 6, form even, immaculate crystallization.
(comparative example 1)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 2.0 × 10
13carry out the irradiation of pulse laser, then, as shown in photo 7, be formed in the crystallization that major axis overlapping portion exists the different spot of crystalline state.When utilizing XRD(X x ray diffraction) carry out surface when resolving, carry out melting in almost whole region.
(comparative example 2)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 3.5 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 8, be formed in the crystallization that major axis overlapping portion exists the different spot of crystalline state.When utilizing XRD to carry out surface parsing, top layer about 3nm is melted.
(comparative example 3)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 3.1 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 9, be formed in the crystallization that major axis overlapping portion exists the different spot of crystalline state.When utilizing XRD to carry out surface parsing, top layer about 8nm is melted.
(comparative example 4)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 3.5 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 10, be formed in the crystallization that major axis overlapping portion exists the different spot of crystalline state.When utilizing XRD to carry out surface parsing, top layer about 9nm is melted.
(comparative example 5)
If use YAG secondary harmonic solid laser device to laser oscillation apparatus, effective power density is set as 3.2 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 11, be formed in the crystallization that major axis minor axis overlapping portion exists the different spot of crystalline state.
(comparative example 6)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 1.4 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 12, form the overall crystallization that there is spot.
(comparative example 7)
If use XeCl excimer laser to laser oscillation apparatus, effective power density is set as 1.3 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 13, form the overall crystallization that there is spot.
(comparative example 8)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 1.4 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 14, form the overall crystallization that there is spot.
(comparative example 9)
If use YAG triple-frequency harmonics solid state laser to laser oscillation apparatus, effective power density is set as 0.9 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 15, form the overall crystallization that there is spot.
(comparative example 10)
If use YAG secondary harmonic solid laser device to laser oscillation apparatus, effective power density is set as 0.6 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 16, form the overall crystallization that there is spot.
(comparative example 11)
If use YAG secondary harmonic solid laser device to laser oscillation apparatus, effective power density is set as 1.4 × 10
12carry out the irradiation of pulse laser, then, as shown in photo 17, form the overall crystallization that there is spot.
Above, describe the present invention based on above-mentioned execution mode and embodiment, but the invention is not restricted to the content of above-mentioned explanation, only otherwise depart from the scope of the present invention, can suitable change be carried out.
Label declaration
1 laser anneal device
2 process chambers
3 scanning means
5 substrate configuration platforms
8 control parts
9 Laser Power Devices
10 pulsed laser action devices
11 attenuators
12 optical transmission units
13 pulse duration adjustment units
15 pulse lasers
19 Laser Power Devices
20 pulsed laser action devices
21 attenuators
22 optical transmission units
25 pulse lasers
100 silicon fimls
150 pulse lasers
Claims (7)
1. a laser anneal device, to amorphous semiconductor film irradiated with pulse laser, the state described amorphous semiconductor film being heated to not melting completely, to make its crystallization, is characterized in that, comprising:
Pulsed laser action device, this pulsed laser action device exports pulse laser; And
Optical transmission unit, the described pulse laser exported from this pulsed laser action device carries out transmitting and irradiates in semiconductor film by this optical transmission unit,
By described pulsed laser irradiation in described semiconductor film, make at semiconductor film shadow surface, energy density is 100 ~ 400mJ/cm
2, the effective power density gone out by following formulae discovery is 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in,
The absorption coefficient of effective power density=pulse energy density/pulse duration × semiconductor film
In formula, the unit of effective power density is J/ (second cm
3),
The unit of pulse energy density is J/cm
2,
The unit of pulse duration is second,
The unit of the absorption coefficient of semiconductor film is cm
-1.
2. a laser anneal device, to amorphous semiconductor film irradiated with pulse laser, the state described amorphous semiconductor film being heated to not melting completely, to make its crystallization, is characterized in that, comprising:
CW optical laser action device, this CW optical laser action device exports continuous laser;
Optical transmission unit, this optical transmission unit is by the continuous laser exported from this CW optical laser action device and transmit from the pulse laser that this continuous laser extracts, and by this pulsed laser irradiation in semiconductor film; And
Pulse laser generation unit, this pulse laser generation unit, in the process of described transmission, extracts described continuous laser, makes it be pulse type, with production burst laser,
By described pulsed laser irradiation in described semiconductor film, make at semiconductor film shadow surface, energy density is 100 ~ 400mJ/cm
2, the effective power density gone out by following formulae discovery is 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in,
The absorption coefficient of effective power density=pulse energy density/pulse duration × semiconductor film
In formula, the unit of effective power density is J/ (second cm
3),
The unit of pulse energy density is J/cm
2,
The unit of pulse duration is second,
The unit of the absorption coefficient of semiconductor film is cm
-1.
3. laser anneal device as claimed in claim 1 or 2, is characterized in that,
There is the energy adjusting unit of the energy density adjusting described pulse laser, in this energy adjusting unit, be set with described energy density, make the described effective power density gone out by described formulae discovery 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in.
4. laser anneal device as claimed in claim 3, is characterized in that,
As described energy adjusting unit, comprise make pulse laser with the decay of the attenuation rate of regulation and through attenuator and adjust the output adjustment unit of output of described laser oscillation apparatus, in this attenuator and described output adjustment unit, be set with described attenuation rate and described output, make the described effective power density gone out by described formulae discovery 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in.
5. laser anneal device as claimed in claim 1 or 2, is characterized in that,
Have the pulse duration adjustment unit of the pulse duration adjusting described pulse laser, this pulse duration adjustment unit adjusts the pulse duration of described pulse laser, makes the described effective power density gone out by described formulae discovery 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in.
6. laser anneal device as claimed in claim 1 or 2, is characterized in that,
Described semiconductor film is Si semiconductor film, and described pulse duration is 50 ~ 500n second.
7. a laser anneal method, this laser anneal method is by pulsed laser irradiation in amorphous semiconductor film, and the state this amorphous semiconductor film being heated to not melting completely, to make its crystallization, is characterized in that,
Set pulse energy density and the pulse duration of described pulse laser, make energy density be 100 ~ 400mJ/cm
2, at shadow surface, the effective power density gone out by following formulae discovery is 2.7 × 10
12j/ (second cm
3) to 1.5 × 10
12j/ (second cm
3) scope in, will the described pulsed laser irradiation after this setting be carried out in described semiconductor film,
The absorption coefficient of effective power density=pulse energy density/pulse duration × semiconductor film
In formula, the unit of effective power density is J/ (second cm
3),
The unit of pulse energy density is J/cm
2,
The unit of pulse duration is second,
The unit of the absorption coefficient of semiconductor film is cm
-1.
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| JP2010-194720 | 2010-08-31 | ||
| JP2010194720 | 2010-08-31 | ||
| PCT/JP2011/067657 WO2012029488A1 (en) | 2010-08-31 | 2011-08-02 | Laser annealing device and laser annealing method |
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| JP (1) | JP5578584B2 (en) |
| KR (1) | KR20130100996A (en) |
| CN (1) | CN103081065B (en) |
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| EP2763159A1 (en) * | 2013-01-30 | 2014-08-06 | University College Cork | Improved low resistance contacts for semiconductor devices |
| JP2014220331A (en) * | 2013-05-07 | 2014-11-20 | 株式会社リコー | Electromagnetic wave irradiation apparatus |
| KR20140142856A (en) * | 2013-06-05 | 2014-12-15 | 삼성디스플레이 주식회사 | Laser apparatus and method of crystallizing |
| JP7320975B2 (en) * | 2019-04-16 | 2023-08-04 | Ｊｓｗアクティナシステム株式会社 | Laser irradiation device, laser irradiation method, and semiconductor device manufacturing method |
| CN113345806B (en) * | 2021-04-23 | 2024-03-05 | 北京华卓精科科技股份有限公司 | Laser annealing method of SiC-based semiconductor |
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| US6555422B1 (en) * | 1998-07-07 | 2003-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method of manufacturing the same |
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| JPS6477119A (en) * | 1987-09-18 | 1989-03-23 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPH04372115A (en) * | 1991-06-21 | 1992-12-25 | Fujitsu Ltd | Manufacture of semiconductor device |
| JP2000058835A (en) * | 1998-07-31 | 2000-02-25 | Semiconductor Energy Lab Co Ltd | Thin film transistor and its manufacture |
| JP5025057B2 (en) * | 2001-05-10 | 2012-09-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP4939699B2 (en) * | 2001-05-31 | 2012-05-30 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP2007115786A (en) * | 2005-10-18 | 2007-05-10 | Sharp Corp | Semiconductor substrate and its manufacturing method |
| JP2006203250A (en) * | 2006-04-05 | 2006-08-03 | Ftl:Kk | Manufacturing method of three dimensional semiconductor device |
| JP5574312B2 (en) * | 2008-03-25 | 2014-08-20 | 国立大学法人山口大学 | Polycrystalline silicon grain boundary modification method and apparatus |
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2011
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- 2011-08-02 JP JP2012531763A patent/JP5578584B2/en active Active
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6555422B1 (en) * | 1998-07-07 | 2003-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and method of manufacturing the same |
| CN100413016C (en) * | 2003-08-07 | 2008-08-20 | 友达光电股份有限公司 | Multicrystalline silicon film manufacturing method |
| CN101179012A (en) * | 2006-11-07 | 2008-05-14 | 株式会社半导体能源研究所 | Method for manufacturing semiconductor device |
| CN101800611A (en) * | 2009-12-25 | 2010-08-11 | 北京化工大学 | OTDM (Optical Time Division Multiplex) system for continuous tunable synchronization range based on SBS optical storage |
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| SG188277A1 (en) | 2013-04-30 |
| CN103081065A (en) | 2013-05-01 |
| TW201208798A (en) | 2012-03-01 |
| KR20130100996A (en) | 2013-09-12 |
| JPWO2012029488A1 (en) | 2013-10-28 |
| WO2012029488A1 (en) | 2012-03-08 |
| JP5578584B2 (en) | 2014-08-27 |
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