201032267 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種在被處理基板上供給處理液以進行既 理的基減理齡，制是關於U絲板以平流方= ς方向输送一邊進行液體處理的基板處理裝置以及基板處理方 【先前技術】 近，，在LCD (液晶顯示器）製造過程中的抗侧 =處^統’普遍顧在沿水平方向鋪設輥子的輸送路徑上一^ ΪΪΪ板/Γί進行顯影、沖洗、乾料—連串顯影處理步驟的Ϊ ίΠ 大，LCD職板（例如玻璃基板）‘ ==更為簡單’發生失誤或對基板的再附著i況 然而，在該平流方式的顯影處理步驟中，當 ===水)置換時，若丄=== 影斑) 表面會在外觀上產生品質差異（稱為顯 對於該等問題，本案申請人，在專利 ίΪΪί板—邊實施顯影處理，並在實施沖洗處理的Ϊ洗ΐϊί 輸送輥子以山形方式傾斜配置的顯影單元。 將 圖6表示專利文獻1所揭示之顯影單元的沖 · 又，圖6⑷係沖洗部的俯視圖，圖6 (^二 ·*^ 在圖示之沖洗部2〇〇的構造中，遴查认、、 〜、i視圖 的輸送路徑202。當在前段處理中盛子2二鋪斤成山形 的輪送路徑202的區間M1向形#办液的基板G從平坦 時，基板G上的顯丄送 板G進入山形的輸送路徑202的下祕厂p日' σ / ) /爪下田基 朝基板寬度方向延伸的沖洗液供岭 .201032267201032267 VI. Description of the Invention: [Technical Field] The present invention relates to a method for supplying a treatment liquid on a substrate to be processed to perform a rational reduction of the age, and the system is for conveying the side of the U-wire in the advection direction = ς direction Substrate processing apparatus for liquid processing and substrate processing method [Prior Art] Recently, the anti-side = in the LCD (liquid crystal display) manufacturing process is generally considered to be on the transport path of the roller in the horizontal direction. Plate / Γ 进行 development, rinsing, dry material - a series of development process steps LCD Π Π, LCD job board (such as glass substrate) ' = = simpler 'missing or reattachment of the substrate i condition, however, In the development processing step of the advection mode, when === water), if the surface is 丄=== 影), the surface will produce a quality difference in appearance (referred to as the applicant for the problem, the patent ΪΪ 板 板- a developing unit that performs a development process and is disposed in a slanting manner in the rinsing process of the rinsing process. The developing unit of the developing unit disclosed in Patent Document 1 is shown in Fig. 6. 6(4) is a plan view of the rinsing unit, and FIG. 6 (^2·*^ in the structure of the rinsing unit 2〇〇 shown in the figure, the transport path 202 of the view, the ～, i view is viewed. In the section M1 of the rounding path 202 of the sacred child 2, the substrate G of the liquid-shaped path is flat, and the display plate G on the substrate G enters the lower secret factory of the mountain-shaped conveying path 202. σ / ) / under the claws of the base of the rinsing liquid extending toward the width of the substrate for the ridge. 201032267
- 供給到基板G上。藉此基板g在通過區間M3、M4期間顯影液D 會被置換成沖洗液S。 ,根據專利文獻1所揭示的沖洗部2〇〇,由輸送輥子2〇1構成山 形的輸送路徑202 —邊輸送基板一邊回收從基板上流下的顯影液 、 D，之後，在基板上供給沖洗液S以將顯影液D置換成沖洗液s。 [習知技術文獻] [專利文獻] [專利文獻1]日本特開2007-5695號公報 Φ 【發明内容】 [發明所欲解決的問題] ，該/中洗部2〇〇巾’為了讓基板上的顯影液D更有效率的流 Z 顯影液D的回收率提高’故以山形的輸送路徑2〇2的段落 差I尚低差）很大的方式配置輸送報子2〇1。 ⑽^讓山形的輸送路徑202的高低差增大，如圖6 U) ，在基板G的隆起部Ga稍微前面(上游側)i 影斑的原因^下的顯影液D會產生條狀的部份L，其係形成顯 上_财游舰離—絲度的位置 因此ΐί ΐ， 輸送路徑的上游侧（區間、M2侧）。 等到受^液方向上的距離d變大， 示的，係在沖洗部200中圖7 (b)的側視圖所 然而，在該ίϋΐ 除去顧影液〇的方法。- supplied to the substrate G. Thereby, the developer D is replaced with the rinsing liquid S during the passage of the sections M3 and M4. According to the rinsing unit 2A disclosed in Patent Document 1, the transport roller 202 is formed by the transport roller 2〇1, and the developer and D flowing down from the substrate are collected while transporting the substrate, and then the rinsing liquid is supplied onto the substrate. S replaces the developer D with the rinse liquid s. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2007-5695 Φ [Summary of the Invention] [The problem to be solved by the invention], the /washing portion 2 wipes 'in order to make the substrate The developer D of the developer D is more efficient, and the recovery rate of the developer D is improved. Therefore, the conveyance newspaper 2〇1 is arranged in such a manner that the step difference I of the mountain-shaped conveyance path 2〇2 is large. (10) The height difference of the transport path 202 of the mountain shape is increased, as shown in Fig. 6 U), and the developer D under the cause of the shadow on the front side (upstream side) i of the raised portion Ga of the substrate G produces a strip-like portion. Part L, which forms the position of the escrow ship, the position of the wire is therefore ΐί ΐ, the upstream side of the transport path (section, M2 side). Wait until the distance d in the direction of the liquid is increased, as shown in the side view of Fig. 7(b) in the rinsing portion 200. However, the method of removing the liquid sputum is removed.
送路徑的上游侧，顯影液D ‘面氣，必須朝向輸 產生微小_影斑。 ⑽_此產生赦，進而讓基板G 5 201032267 又’雖然從氣刀204喷出的空氣有效率地除去基板上的顯影 液D 但與圖6的構造相同，如圖7 (a)所示的在基板上液體去 除區域於基板輸送方向上的距離d變大，等到受沖洗液s供給戶斤 需要的時間變長，會因此而產生顯影斑。 有鑑於上述習知技術的問題點，本發明之目的在於提供一種 分別回收在平流輸送線上對被處理基板供給的第i處理液並讓置 換成第2處理賴動假有效軸_進行，而麟抑制顯 產生的基板處理裝置以及基板處理方法。 [解決問題之技術手段] 為了解決上述問題，本發明之基板處理裝置，其對被處理美 板供給第1處理液以實施既定液體處理，將該第丨處理液回收， 並以，2處理液洗淨’包含：基板輸送路徑，其以平流方式輸送 給機構’麟絲域送路徑所輸 ======= 二液f給機構，其對接受該氣體供給機構吹送氣流， 、亲供所輸送之馳處理基㈣基板面，以既定流 處理液供給，抛職板輸魏麵 ^ ，據構造’賴衫！處理賴給錢 =游=;^液用氣體供給機構朝 前。藉此’從基板除去之第1處理液的 去除£域變小’而能_ 1處理液直接置換成第2處^^ 201032267 又，嫌嫩 送，t Γ能夠抑制細小的顯影斑產生。 間，接續該第1輸侧戦===== 間，接續該第2輸送區間形成下降傾斜之 3 “ 里設置在該第1輸送區間上氣 ，構汉置在該第2輸賴間，該第丨沖洗液供給 ===?輸送區間與第3輸送區間心 !•脸ΪίΪ等構Ϊ，變能夠糊上升傾斜的第2輸送區間從基板 ^mi理 率地除去，且能夠直接將第1處理液置換成 …又’該氣驗給機麟職處縣板的基板时送的氣流， 宜為朝基板寬度方向直線狀延伸的幕簾狀氣流。 wff樣讓氣流祕板寬度方向錄狀延伸絲簾狀，藉此便 此夠抑制從基板除去之第丨處理液的端部在基板寬度方向上產 生不平均的情況。On the upstream side of the feed path, the developer D is 'face-to-face, and must be slightly astigmatized toward the output. (10) _ This causes 赦, and the substrate G 5 201032267 and 'the air ejected from the air knife 204 efficiently removes the developer D on the substrate, but is the same as the structure of FIG. 6, as shown in FIG. 7(a). The distance d in the substrate transport direction on the substrate becomes large, and the time required for the supply of the rinse liquid s to the household is longer, and thus the development spot is generated. In view of the above problems in the prior art, it is an object of the present invention to provide an ith treatment liquid that is supplied to a substrate to be processed on a flat flow line and that is replaced by a second process. A substrate processing apparatus and a substrate processing method for suppressing occurrence. [Means for Solving the Problems] In order to solve the above problems, the substrate processing apparatus of the present invention supplies a first processing liquid to a processed sheet to perform a predetermined liquid treatment, and recovers the second processing liquid, and the second processing liquid Washing 'contains: the substrate conveying path, which is conveyed to the mechanism in the advection mode. The input of the Linsi domain sending path ======= two liquids to the mechanism, which accepts the gas supply mechanism to blow the airflow, and the pro-supply The transported processing base (four) substrate surface is supplied with a predetermined flow of treatment liquid, and the throwing plate is sent to the Wei surface ^, according to the structure 'Lai shirt! Deal with the money = swim =; ^ liquid gas supply mechanism forward. In this way, the removal of the first treatment liquid removed from the substrate is reduced, and the treatment liquid can be directly replaced with the second treatment unit. 201032267, and it is possible to suppress the occurrence of fine development spots. Between the first transmission side 戦=====, the second transport section is formed to form a descending inclination 3, and the gas is set in the first transport section, and the structure is placed between the second transport zone. The second rinsing liquid supply ===? The transport section and the third transport section heart!•face Ϊ Ϊ Ϊ Ϊ Ϊ 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第1 The treatment liquid is replaced by... and the airflow sent by the gas to the substrate of the machine board of the county is preferably a curtain-like airflow extending linearly in the width direction of the substrate. wff-like By extending the curtain shape, it is possible to suppress the occurrence of unevenness in the width direction of the substrate in the end portion of the second processing liquid removed from the substrate.
又，該第2沖洗液供給機構，設有吐出該第2處理液的沖洗 喷嘴’該沖洗㈣，相躲職板輸魏徑所觀讀處理基板 的基板面，其吐出方向宜配置成朝垂直方向或輸送方向下 中任一方向的狀態。 八 藉由該等構造，便能夠防止對被處理基板供給之第2 液 在基板上的逆流。 又，為了解決上述問題，本發明之基板處理方法，係對被處 理基板供給第1處理液以實施既定液體處理，將該第i處理液回 收，並以第2處理液洗淨的基板處理方法，包含：在基板輸送路 徑上以平流方式輸送該被處理基板，並在基板上供給第1處理液 的步驟；對由該基板輸送路徑所輸送並接受該第1處理液供給之 201032267 忒被處理基板的基板面，朝垂直方向或輸送方向下游侧其中任一 方向吹送既定氣流的步驟；對接受該既定氣流的吹送，&由該基 板輸送路役所輸送之該被處理基板的基板面，以既定流速供终談 第j處理液的步驟；以及對接受該第2處理液供給，並由 輸送路控所輸送之該被處理基板的基板面，以更高流速终 處理液的步驟。 〜、口以乐 利用該等方對接受f 1處理液供給且以平流方式輸送的 基，，在，第1處理液回收時朝基板輸送方向（下游側）吹送既 定氣流。藉此’從基板除去之第丨處理㈣前端部（上游側 延伸。 然後，對第1處理液被除去之基板面直接以蚊流速（ ，給時沖，很小的流速）供給第2處理液，再以高流速供2 處理液。藉此，在將基板上的第i處理液置換成第2處理液時的 液體去除區域變小，且能夠將第i處理液直接置換成第2處理液。 不會有像習知技術那樣作為該第1處理液的顯影 洛錢留斑關狀態下被放置著的翻，能夠抑 的產生。 …i⑨„係_直方向或輸送方向下游側其中任—方向吹 达，故第1處，液不會產生波紋，能夠抑制細小的顯影斑產生。 壬古該第1處理液供給之該被處理基板的基板面，朝 ίίϊΐ，送方向下游側其中任—方向吹送既定氣流的步驟 >成上升傾斜的該基板輸送路徑所輸送的該被處理基板實 镇用形成上升傾斜的第2輸送區間從基板上將 ，且能夠將第1處理液直接置換成第2 以該既定流速接受第2處理液的供給並由該基板輸送 之ΐΐΐ理基板的基板面，以更高流速供給該第2處 板輸送路麵輸送魄被處理絲實施。又，宜 201032267 路徑所輸送之被處理基板的基板面，朝垂直方向或輪送方 侧其中任一方向吐出該第2處理液。 藉此，便能夠防止對被處理基板所供給的第2處理液 上逆流。 土槪 [對照先前技術之功效]Further, the second rinsing liquid supply means is provided with a rinsing nozzle for discharging the second processing liquid, the rinsing (four), and the substrate surface of the substrate to be processed by the wadding plate is disposed, and the discharge direction is preferably arranged to be vertical. The state in either direction of the direction or the conveying direction. According to these structures, it is possible to prevent backflow of the second liquid supplied to the substrate to be processed on the substrate. In order to solve the above problem, the substrate processing method of the present invention is a substrate processing method in which a first processing liquid is supplied to a substrate to be processed to perform a predetermined liquid treatment, and the ith processing liquid is recovered and washed with a second processing liquid. The method includes: transporting the substrate to be processed in an advection manner on a substrate transport path, and supplying a first processing liquid on the substrate; and processing 201032267 输送 that is transported by the substrate transport path and receiving the first processing liquid is processed a step of blowing a predetermined airflow in either one of a vertical direction or a downstream direction of the transport direction; or a blow surface for receiving the predetermined airflow, and a substrate surface of the substrate to be processed transported by the substrate a predetermined flow rate for the step of terminating the j-th treatment liquid; and a step of treating the substrate surface of the substrate to be processed which is supplied by the transport path by receiving the second treatment liquid, and finally treating the liquid at a higher flow rate. 〜 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 By the fourth step (the fourth end) which is removed from the substrate, the front end portion (the upstream side is extended. Then, the second processing liquid is directly supplied to the substrate surface from which the first processing liquid is removed by the mosquito flow rate (time-lapse, very small flow rate). The second treatment liquid is supplied at a high flow rate, whereby the liquid removal region when the i-th treatment liquid on the substrate is replaced with the second treatment liquid is reduced, and the i-th treatment liquid can be directly replaced with the second treatment liquid. There is no such thing as the turning of the development of the first treatment liquid in the state of the development of the first treatment liquid as in the prior art, and it can be suppressed. ... i9 „ _ _ _ _ _ _ _ _ _ _ _ Since the direction is blown, the liquid is not corrugated in the first place, and it is possible to suppress the occurrence of fine development spots. The substrate surface of the substrate to be processed supplied by the first processing liquid is supplied to the downstream side of the substrate. Step of blowing a predetermined airflow in the direction> The substrate to be processed which is transported in the upwardly inclined substrate transport path is formed on the substrate by the second transport section in which the rising inclination is formed, and the first processing liquid can be directly replaced with the first processing liquid. 2 with both The substrate surface of the processing substrate that receives the supply of the second processing liquid at a constant flow rate and is transported by the substrate is supplied to the second surface plate to convey the surface of the substrate to be processed at a higher flow rate. Further, the path to be transported by the 201032267 path is required. The substrate surface of the substrate is processed, and the second processing liquid is discharged in either the vertical direction or the side of the carrier side. Thereby, it is possible to prevent backflow of the second processing liquid supplied to the substrate to be processed. The efficacy of technology]
本發明提供一種基板處理裝置以及基板處理方法，A ΓίΐΪί徑上對被處理基板所供給之第1處理液分別;收 換成第2處理液的動作有效率地順利進行，並抑制顯影斑的產生。 ❹ 魯 【實施方式】 根據圖示説明本發明之基板處理震置以及基板處理方 ^相關只施態樣。本發明的基板處理裝置，可應用於將例如LCD =玻璃基板當作贼理基板（以下稱縣板），結LCD製造 驟之中實施洗淨、抗糊塗佈、預烤、顯影以及曝 後烤等各種處理的塗佈顯影處理系統的一部份構造上。 具體而言，係可應用於在基板上塗佈光阻，透過遮罩圖案實施 t處^在基板上實施㈣以及攸處理的顯影單 ^ 參關稀日林發賴跡聽單元（DEV)的—個實ς 意方式表示該實郷態之顯料元（DEV) 1的整 延伸的平流輸送路徑2 (基板輸送路徑)， g該輸祕徑2從上_辦設影部3、沖洗部4以及乾燥 方向（X方向）上以既定間隔（例如間隔 lii 1 式）受到既定速度（例如⑼腿/s)的輸送。 雜刪軸構嶽_^的 該輸送路徑2在輸送方向（χ方向）上從始點到終點並非在 201032267 同咼度位置上延續，包含在途中既定處所藉由幸昆子6的配置所 形，的第1隆起部2a、第2隆起部2b以及高低差部2c。如圖工 所示的，輸送路徑2從輸送方向（X方向）的一邊觀察並根據輸 送路徑的形狀可區分成9個輸送區間Ml、M2、M3、M4、M5、 M6 ' M7 > M8 ' M9 ° 第1輸送區严曰 1 Ml，係從祕處理部到設定在比顯影部3的出 =更前面（上游側）-點的位置上的第i區間變更點ρι的區間， 其设有保持著既定高度位置（設定為第！底部位置） 線延伸的水平輸送路徑。 戍于艰十直 第2輸送關M2，係從該帛i區間變更點ρι到設 邛3與沖洗部4的邊界附近位置上的第2區 ‘門v =送:徑的高度逐漸變高的方式配置輕子6。第更2 向^斜到比第1區間變更隨的高= |更同既疋里（例如6mm)磁的第i隆起部2a的頂上的輸送路 第3輸送區間M3，係從該第2區 部4入口附近的第3區間變更 &疋在沖洗 機___子度逐 既定傾斜角向下倾斜到比其更低既定量以 底部位置的輸送路徑。 』如6mm)间度的第1 第4輸送區間M4，係從沖洗部4人 與料1麵位高度喊乎斜直^延 第5輸送區間Μ5，係在沖法邱4 w到與其_狀_峨4師變更點 區間變更點P5的區間，其設有游側之位置上的第5 部位置更高既定量（例如角向上傾斜到比第！底 上的輸送路徑。 ）呵度的第2隆起部2b的頂 第6輸送區間鳩，係在沖洗部切從該第5區間變更點p5 201032267 .比其更靠下游侧之位置上的第6區 定為第2底部位置）上的輸送路& 〜25咖）尚度的位置(設 第7輸送區間M7，係在沖漆部4 dJoau + λ*· 到設定在與其間隔既定距第6區間變更點Ρ6 部4出口猶微前面（上游側）立置，亦即在沖洗 的水〇底触置相關紅財料直線延伸 第8輸送區間M8，係從該第7區 — =?=5的邊界附近的第8區間變更 第度Λ 的上段位置的輸送路徑。 呆持固尺而水平直線延伸的水平輸送路徑。 、又 又’在顯影部3巾，於第1輸送區間Μ的既定 f有《液供給喷嘴（以下稱為顯影噴 ; ^ 動的基板G吐出基準濃度的顯影液（第二移 =設有朝基板寬度方向延伸的狹縫狀出置成 ' 9 f數個微細π徑的吐出口的長條型喷嘴所 ，.“頁影液供給源透過配管供給顯影液。 下的 參液顯i in設有底盤10，用來收集流到輸送路徑2之下的顯 di?的排液口透過排液管11連通到顯影液再利3 利用機構12，將歸液噴嘴9在基板G上盛f 2 =液時所職赫_影親過缝及驗f n = ，收的顯影液内加入原液或溶媒，然後將調整為基 ^ 衫液送到該顯影液供給源回收再利用❶ 又的顯 又’在顯影部3出口附近的第2輸送區間膽，於比第i隆起 11 201032267 —點的上方位置上，設有空氣喷嘴21 ^ 直方向或輸送方向下游健中任一方向 簾狀氣流:藉由^篡蕙嘴出朝基板寬度方向直線狀延伸的幕 的顯影液延^ iif gUf基板傾斜面而形成薄膜狀 域變小。 隆起11卩2a附近’讓基板G上的液體去除區 又’在顯影部3盘沖法邱4 . 間與第3輸送區之間“ H即設置在該第2輸送區 喷嘴22(第1沖峰饬^f隆起部％的上方，配置有第1沖洗 到顯影液流過的基板g的冲勁（衝擊）很小的流速，直接供給 所形成的嘴21所供給的沖洗液，被該空氣喷嘴21 間=。触’輸送方向減_第2輸送區 供‘r其1洗/嘴23 (第2沖洗液 更大=+供，液?置換(顯影停更止7二’二吐出時的沖勁 方向配置有第3沖洗嗔嘴既疋位置上’沿著輸送 部，上升，面=:上 著輸送方向配置有第上’沿 m料峨㈣上方==== 再者，在出口附近的第8輸送區間Μ τ洗液 輸送方向崎第5沖洗喷嘴26，其向爬上輪送路彳 ’沿著 IS Iff/從上方吐出最後洗淨用的沖洗液。各^中洗嘖部 從未型喷嘴以7 洗液 12 201032267 經圖示）。圖示雖省略，然亦可設置從輪送路握2 面喷吐洗淨用沖洗液的底部沖洗喷嘴。 Τ基板G底 在乾燥部5中，於第9輸送區間Μ9的開弘 置上，沿著輸送方向配置1條或複數條長條°體二嘴位 20，其向剛上升爬過輸送路徑2的該高低 噴嘴或氣刀 吹送與輸送方向相反方向職體去喊乾J 係空，）。亦可設置從輸送路徑2之下向基板g底^^^ 除或乾燥用高壓氣流的底部氣刀（未經圖示）。又了二加' _ 可設置底盤（未經圖示），用來收集流職送路徑、f 2亦 Φ /中冼邛4以及乾燥部5，在相異處理部之間的 =沿著輸送路徑2的测空間分隔成上_與下游似ς 向延伸的分隔壁30a、30b。更詳而言之，在顯 咕 $ 的邊界亦即第2輸送區間M2與第3輪送區界'附近二 2：?^ rttlf 1 2 ^第9輪达㈣Μ9的邊界附近設置分隔壁3%。各分隔壁3加、 30b，分別形成讓輸送路徑2通過的開口 31、&。 ^ ’在該顯影單元（DEV) i中，各處理部3、4、5内的空間 3〇^、3%的開口 31、32相互連通。在顯影部3以及 ίϋ2 :由用來吸人室外空氣的風扇33、34，以及用來過 Ζ 34所吸人之空氣流的空氣過渡器35、％，從頂窗 供給到室内。其中’顯影部3的頂窗所供給的清 3工二广顯影處理時所產生之顯影液液霧，並通過該分隔壁 30a的開口 31流入沖洗部4的室内。 Ϊ面’乾燥部2的頂窗所供給的清淨空氣，捲入乾燥（液 體^除)、處理所產生的沖洗液液霧，並通過該分隔壁働的開口 13 1 的室内°在沖洗部4的底部設有排氣口38，其與 /、備例^排，泵或是排氣風扇的排氣機構37連通。 2 像這樣從顯影部3侧流入的液霧混合空氣，與從乾燥部5侧 流入的液|混合空氣’捲人沖洗部4崎產生的祕並由左右合 201032267 流而從排氣口 38排出。 間的?:處Si步詳細説明第2輸送區間M2以及第3輸送區 笛係俯視圖，顯示出基板G通過輸送區間M2、M3的 :1 ^ 4 2a時的狀態，圖2 (b)係其侧視圖。又，圖3係侧視 體顯示出配置在該輸送區間搬、M3的氣刀2卜第1 //喷嘴2、第2沖洗喷嘴23的相互配置關係。 异所的’在第1隆起部2a上’朝基板寬度方向延伸的 長刀21、第1沖洗喷嘴22、第2 板輸送方向配置。 τ兀貝％ u依序,口者基 朝番置在距離基板面例如5〜15mm高度的位置上， 朝直方向或輸送方向下游侧其中任一方向對上升傾斜的輪 ，所輸送之基板G吹送既定的高壓氣流。 以當垂直下方（垂直方向）設為^ 斜既定肢01 (例如G。嗜）的狀態設置在輸送^朝= & ’該氣刀21對從基板G流下的顯影液D的前端部 向（下游側）吹送既定流量（例如300〜公 狀Λ f ^，該㊆綠基板寬度方向錄狀延伸而形成 Ϊ簾Ϊ合，奴到基板後方(上游侧）的顯影液°不會形成條 狀 θ以溥膜的狀態延伸到基板隆起部Ga附近。 、 μΪ、^基if送方向（下酬）吹賴紐，可防止顯影液 D形成波紋，並抑制細小的顯影斑點產生。 德方,I· 板隆起部Ga附近的第1沖洗噴嘴22，朝基板 影液D 過的基板上直接以低流速（例如 Γ 洗喷嘴22，配置在距離基板面例如2麵的高ί 又出約略朝向垂直下方（以垂直下方作4〇。傾斜_。）。 面的耠误送區間Μ3的第2沖洗喷嘴23，對作為下降斜 J ' 〇〇 Β 所輸送的基板G，以更高流速（例如i.7581m/ 201032267 _ s+)吐出沖洗液s ’將顯影㈣完全置換成沖洗液s。該第 喷嘴23配置在例如距離基板面〜3〇mm的高度上，並吐 朝向基板輸送方向（下游侧）。亦即，如圖3所示的沖洗 3 =直下方（垂直方向）作為〇。時其喷射方向朝下游側傾斜既定 角度Θ2 (例如0。〜70。）的狀態配置在輸送區間奶的上方斜 7 at，在輸送區間奶與第3輸送區間M3構成第1隆起部 2a的輸达輥子6，以如圖3所示的方式配置。亦即，若 =2a中位於最餘置的輸送鮮6的高度縣^ 在最尚位置的輸送輥子6的高度為例如〇〜9mm = j 參 .得很大，該高度宜適當設定 所，送的氣流’軸影液D更容易延伸得很薄二3 氣刀21育出氣流的供給位置與第1沖洗喷嘴22吐出沖 =液，供給位置之間的距離，設定為例如2()〜4()職（宜為 、+Till又’在基板G上，氣刀21噴出氣流的供給位置盥第2 ==^!供給位置之間的距離，設定為例丄 1的4、_ 5敝觸移騎纽賴顯料元（DEV) 斤又，圖4係侧視圖，顯示出對輸送區間_、M3 所輸达之基板G置換處理液的狀態，圖5顯 顯影液S·態。_ ”計&此日格板G上的 輥子部f出的基板0以一定速度(例如60醜，s)用 V) 1時’首先在顯影部3，基板G在輸送 3喷嘴影液D。在基板G上絲絲 /、輸送速度相同的掃動速度盛裝顯影液。 ^ 液D被底盤1〇收集。 攸基板G溢出的顯影 級姆彡液D 板G，之 M2 ^其形成山形的第】隆起部2a的上升傾斜部=弟2輸紅間 畜基板G被輪送到第2輸送_ Μ2時，基板上的顯影液d 15 201032267 會因為重力而開始向下方亦即後方移動。 一 的’氣刀21對通過其下方的基板G吹送既定 你U)所示 公升/min)的高壓氣流。在基板 二〜500 輸送基板G流下顯影液D的上端部份間，從被 基板輸送方向吹送的幕簾狀氣流擋住。 乃會破一直朝 從基板G流下的顯影液D的上端部份 該氣流而朝基板輸送方向延伸，如圖（ °二’ θ因為 範圍擴大(又基板後方侧的薄 S1 : /S)卿吐㈣的沖勁較小的流速對基板G供給沖洗液 f fi^+5(b)所示的在基板上形成與顯影液D(薄膜部D2) 的刖，挪並未間隔太大距離的沖洗液8的薄膜部S1。、 亦即’顯影液D的薄臈部D2與沖洗液s的薄膜 體ίΐ區域E的基板輸送方向的寬度是很小的部份4不 會對,、、、員衫斑的產生造成影響。 不會間斷，以沖，液s 沖敎大的 成厚膜部S2。 所補接沖洗液S的薄膜部S1形 間2輸送區間⑽被輸送到第3輸送區 所示的將基板G頂面全部蠤停點止如圖5⑷ ί换前方的顯影液以及沖洗液被底盤Π收集。 化，土板G上的處理液從顯影液D置換成沖洗液、s的 16 201032267 2由空氣喷嘴21所吹送的幕簾狀氣流而從基板傾斜面流 • It ίϊϊ的顯影液D會延伸到基板隆起部Ga附近，並直接 I把r z/嘴嘴22對基板隆起部Ga附近供給沖洗液s。因此， 二ΐ把液體去除_變，]、，能夠叫_乎沒有間斷的方式 將基板上的顯影液D置換成沖洗液s。 ς’藉由轉簾狀氣流，第1沖树嘴22顺給之沖洗液 二二而^不會流到輸送方向相反侧（第2輸送區間Μ2)，故顯 衫液D與沖洗液S幾乎不會有混合的情況。 ㈣不會有像習知技術那樣顯影液〇在流落而殘留斑 點的狀態下被放置著的時間，故能約抑制顯影斑的產生。 、魅,ϋί??*21所喷射的幕簾狀氣流，朝向基板輸送方向（下 游幻i’t頁衫液D不會產生波紋，能夠抑制細小顯影斑的產生。 ^處理完成的基板G，通過水平的第4輸送區間腿，接著 ^ ί Ϊ达區間M5爬上第2隆起部2b的上升傾斜路徑。此時， 上的置換用沖洗液因為重力從基板前端侧向後方移 動後，下。再者，上方的沖洗喷嘴24在基板G上供給 的沖洗液’沖掉舊的沖洗液，且該新的沖洗液也從基 流落到基板後方的沖洗液被底盤17收集。如是，越 頂點的基板G，在其頂面殘留一次洗淨用沖洗液的薄液膜 =態下’跨到第2隆起部2b的下降傾斜路徑（第6輸送^ 接著，當基板G在第2隆起部2b的下降傾斜路徑（M6) 降移動時，上方的沖洗噴嘴25在基板G上供給 ^ j j =奇沖洗液將㈣地·在基板G上的—次洗 =-起從基板前端流下。流落到基板G前方的沖洗液被底盤Ο 果0 像這樣完成沖洗處理的基板G ’通過水平的第7輪 M7’在接下來的第8輸送區間M8爬上高低差部2c的上升傾= 捏。此時，前在基板G上的處理用沖洗液因為重力從基板^ 17 201032267 侧向後方移動而從基板後端流下。再者，上方的沖洗噴嘴26在美 板G上供給最後洗淨用的沖洗液，該新的沖洗液推擠舊的沖洗& 並一起從基板後端流下。流落到基板G後方的沖洗液被底盤17 收集。 然後’當基板上高低差部2c，並進入乾燥部5侧亦即第 9輸送區間M9的上段輸送路徑時，氣刀2〇對基板G吹送與輪送 方向相反方向的咼壓氣流，藉此基板G上殘留的沖洗液被推向美 板後方並從基板後端被吹出去（液體去除）。從基板G後 ^ 去的沖洗液被底盤17收集。 賤出 〇 像這樣在顯影單元（DEV) 1内完成一連串顯影處理步驟的美 板G，就這樣在輸送路徑2上直線移動並送到後段的處理部。土 、如上所述，本發明之實施態樣，係供給顯影液D並對平流輸 鋪練D雜時氣刀21 _直方向或輸送 mi 向吹送在基板寬度方向上絲狀延伸的幕 基板G被除去的顯影液D的前端部（上游側） 以抵:Hi'液D被除去的基板面直接利用第1沖洗喷嘴22 Γ。?此嘴吐出時的沖勁較大=供= 點的狀離下被放罟像習知技術那樣顯影液D在流落而殘留斑 9、士 實態樣中，係將該氣刀、第1沖洗嗜嘴22、第 2沖洗贺嘴23配置在第i隆起部 二义=』 ;===從基板上將顯影液= 嘴^ 崎m1沖洗喷 噴射出來的該幕簾狀的高壓=¾影=從氣刀21 18 201032267 罢沾又二在該實施態樣中’氣刀21與第1沖洗嘴嘴22係分開設 置的，然而亦可設置成一體構造。力 ^你刀開口又 的导i刑ϊΐ施ίί所示之各沖洗喷嘴’係朝基板寬度方向延伸 二、’、喷嘴’惟並非以此為限，亦可設置成將分別設有與細口 :::的複數噴嘴(例如噴_的喷嘴)在基板寬度方向上 ❹ 出時中’雖限定吐出流速使第1沖洗噴嘴Μ吐 、先嘖2沖洗喷嘴23吐出時的沖勁更小，然而若第1沖 量出限定中洗喷嘴23的喷嘴形狀相同，亦可利用吐出流 【圖式簡單說明】 的整用本發明之基板處理裝置的顯料元（鹽） 侧視y(a)〜(b)係表示通過第1隆起部的基板的狀態的俯視圖以及 洗喷^ 體顯示配置於第1隆起部的氣刀、第1沖 /中洗喷一嘴的相互配置關係的侧視圖。 ❹態的侧視^⑼係表不對第1隆起部所輸送之基板置換處理液的狀 板上鱗圖4祕赌置錄態的基 =a)〜(|>)= 不習知沖洗部的構造的俯視圖以及侧視圖。 圖。a)〜（）係表不習知另—沖洗部的構造的俯視圖以及侧視 【主要元件符號說明】 1:顯影單元（基板處理裝置） 2:輸送路徑（基板輸送路徑） 2a:第1隆起部 19 201032267 2b:第2隆起部 2c:高低差部 - 3:顯影部 4、200:沖洗部 5:乾燥部 6:輥子 9:顯影液供給喷嘴（第1處理液供給機構） 10、 17:底盤 11、 18:排液管 12:顯影液再利用機構 φ 20、204:氣刀 21:氣刀（氣體供給機構） 22:第1沖洗喷嘴（第1沖洗液供給機構） 23:第2沖洗喷嘴（第2沖洗液供給機構） 24:第3沖洗喷嘴 25:第4沖洗喷嘴 26:第5沖洗喷嘴 30:外殼 30a、30b:分隔壁 31、32:開口 ® 33、34:風扇 35、36:空氣過濾器 37:排氣機構 38:排氣口 201:輸送輥子 202:輸送路徑 203:沖洗液供給喷嘴 A:製程產線 D、D卜D2:顯影液（第1處理液） d:距離 20 201032267 E:液體去除區域 G:被處理基板 Ga:基板隆起部 L:條狀部份The present invention provides a substrate processing apparatus and a substrate processing method, each of which processes a first processing liquid supplied to a substrate to be processed, and smoothly performs an operation of replacing the second processing liquid, thereby suppressing generation of development spots. .实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施 实施The substrate processing apparatus of the present invention can be applied to, for example, an LCD=glass substrate as a thief substrate (hereinafter referred to as a county board), and is subjected to cleaning, anti-stick coating, pre-baking, developing, and post-exposure baking in the LCD manufacturing process. A part of the coating development processing system of various treatments is constructed. Specifically, it can be applied to coating a photoresist on a substrate, performing a pattern on the substrate through the mask pattern, and performing a (four) and 攸 processing on the substrate to form a developing unit. a solid way to represent the entire extended advection transport path 2 (substrate transport path) of the apparent element (DEV) 1 of the real state, g the secret path 2 from the top to the shadow portion 3, the flushing portion 4 and the drying direction (X direction) is conveyed at a predetermined interval (for example, interval lii 1) at a predetermined speed (for example, (9) legs/s). In the conveying direction (χ direction), the conveying path 2 of the miscellaneous cutting axis structure _^ does not continue from the starting point to the end point in 201032267, and is included in the configuration of the lucky Kunzi 6 in the established place on the way. The first raised portion 2a, the second raised portion 2b, and the step portion 2c. As shown in the figure, the conveying path 2 is observed from one side of the conveying direction (X direction) and can be divided into nine conveying sections M1, M2, M3, M4, M5, M6 ' M7 > M8 ' according to the shape of the conveying path. M9 ° The first transporting zone is strictly 1 Ml, and is provided in a section from the secret processing section to the i-th section change point ρm at a position that is higher than the output (upstream side)-point of the developing unit 3, and is provided. Maintains a horizontal transport path with a defined height position (set to the !! bottom position) line. The second delivery switch M2 is from the 帛i section change point ρι to the second zone of the setting 邛3 and the vicinity of the boundary of the rinsing section 4, the door v=send: the height of the path gradually becomes higher The way to configure the lepton 6. In the third direction, the third transport section M3 on the top of the i-th raised portion 2a of the magnetic (i.e., 6 mm) magnetic field is shifted from the second region to the second region. The third section change & 附近 in the vicinity of the inlet of the section 4 is inclined downward at a predetermined inclination angle of the rinsing machine ___ to a conveying path which is lower than the lower limit by the bottom position. The first fourth transport section M4, such as 6mm, is from the rinsing section 4, and the height of the surface of the material 1 is slanted and straightened. The fifth transport section Μ5 is attached to the rushing method. _峨4 division change point section change point P5 section, which has a higher position in the fifth position at the position of the swim side (for example, the angle is inclined upward to the transport path above the bottom!) In the top sixth conveyance section 2 of the raised portion 2b, the conveyance is cut from the fifth interval change point p5 201032267, and the sixth region at the downstream side is set as the second bottom position. Road & ～25 coffee) The position of the Shangdu (the seventh transport section M7, which is in the paint section 4 dJoau + λ*· is set in the sixth section of the interval between the 6th section and the 6th section. The upstream side is placed upright, that is, the 8th conveying section M8 of the linear extension of the relevant red material is touched at the bottom of the flushing water raft, and the 8th section near the boundary of the 7th zone -=?=5 is changed. The conveying path of the upper position. The horizontal conveying path that holds the solid rule and extends horizontally straight, and the 'conveying unit 3 towel, the first conveying In the case of the intermediate Μ, there is a liquid supply nozzle (hereinafter referred to as a developing spray; a developing solution in which the substrate G is discharged with a reference concentration (second shift = a slit shape extending in the width direction of the substrate is set to be '9 f A plurality of slit nozzles having a fine π-diameter discharge port. The "heading liquid supply source supplies the developer through the pipe. The lower ginseng liquid is provided with a chassis 10 for collecting the flow under the conveying path 2. The liquid discharge port of the display di is connected to the developer through the drain pipe 11 and the utilization mechanism 12, and the liquid return nozzle 9 is held on the substrate G when the liquid is filled with f 2 = liquid. =, the stock solution or the solvent is added to the collected developer, and then the liquid is adjusted to be sent to the developer supply source for recycling and reuse, and the second transport interval near the exit of the developing unit 3 is again Above the i-th elevation 11 201032267 - above the point, there is an air nozzle 21 ^ straight direction or a downstream direction of the transport direction in any direction of the curtain airflow: a curtain extending linearly in the width direction of the substrate by the nozzle The developing solution extends the inclined surface of the iif gUf substrate to form a thin film-like domain. The bulge 11卩2a In the vicinity, the liquid removal area on the substrate G is again 'between the developing unit 3 and the third transfer area. H is disposed in the second transfer area nozzle 22 (the first peak 饬 ^f Above the ridge portion %, a flow rate at which the momentum (shock) of the substrate g flowing through the first rinsing to the developer is small is supplied, and the rinsing liquid supplied from the formed nozzle 21 is directly supplied to the air nozzle 21; Touch 'transport direction minus _ second transport area for 'r its 1 wash / mouth 23 (the second rinse liquid is larger = + supply, liquid replacement (development stop is more than 7 two' two discharge when the direction of the arrangement is The third flushing nozzle is at the position of 'between the conveying portion, rising, and the surface=: the upper direction is arranged along the conveying direction. The upper side is along the m material (four). ==== Again, the eighth conveying interval near the outlet The τ τ washing liquid conveys the direction of the fifth rinsing nozzle 26, which is sent to the climbing wheel 彳 'to discharge the rinsing liquid for the last cleaning from the upper side along IS Iff/. Each of the n-washing parts is not washed with 7 nozzles 12 201032267 as shown). Although not shown in the drawings, it is also possible to provide a bottom flushing nozzle for flushing the washing liquid from the two sides of the wheel feed path. The base of the base plate G is in the drying section 5, and is disposed in the ninth transport section Μ9, and one or a plurality of strips of the two nozzles 20 are arranged along the transport direction, and the crawling path 2 is just ascended. The high and low nozzles or air knives blow the opposite direction of the conveying direction to the body to shout dry J line,). It is also possible to provide a bottom air knife (not shown) that removes or dries the high-pressure airflow from below the transport path 2 to the bottom of the substrate g. Another two plus ' _ can be set up the chassis (not shown), used to collect the flow route, f 2 Φ / 冼邛 4 and the drying section 5, between the different processing sections = along the transport The measurement space of the path 2 is divided into upper and lower partition walls 30a, 30b which extend in the downstream direction. More specifically, at the boundary of the 咕$, that is, the second transport section M2 and the third round of the border area 'near 2:?^ rttlf 1 2 ^ the 9th round (four) Μ9 is set to the partition wall 3% . Each of the partition walls 3 and 30b respectively form an opening 31, & for passing the conveying path 2. In the developing unit (DEV) i, the openings 31 and 32 of the space 3〇 and 3% in the respective processing units 3, 4, and 5 communicate with each other. The developing unit 3 and the ϋ 2 are supplied from the top window to the room by the fans 33 and 34 for absorbing the outdoor air and the air circulators 35 and % for absorbing the air flow. The developer liquid mist generated during the development processing by the top window of the developing unit 3 flows into the chamber of the rinsing unit 4 through the opening 31 of the partition wall 30a. The clean air supplied from the top window of the drying section 2 is taken up by the drying (liquid removal), the rinsing liquid mist generated by the treatment, and passed through the opening 13 1 of the partition wall ° in the rinsing section 4 The bottom of the bottom is provided with an exhaust port 38 which communicates with the exhaust mechanism 37 of the pump or the exhaust fan. 2, the liquid mist mixed air flowing in from the developing unit 3 side and the liquid | mixed air flowing from the drying unit 5 side are generated by the flow of the left and right sides 201032267 and are discharged from the exhaust port 38. . In the middle of the ?: step, the second transport section M2 and the third transport zone flute top view are detailed, and the state in which the substrate G passes through the transport sections M2, M3: 1 ^ 4 2a is shown, and Fig. 2 (b) Side view. Further, Fig. 3 shows a mutual arrangement of the air knife 2, the first/nozzle 2, and the second flushing nozzle 23 disposed in the transport section, M3. The long side of the long blade 21, the first rinse nozzle 22, and the second plate which are disposed in the first ridge portion 2a in the width direction of the substrate are disposed in the transport direction.兀 % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % % Blow a given high pressure air stream. In the state in which the vertical direction (vertical direction) is set to be a predetermined limb 01 (for example, G.), the conveyance is set to the front end portion of the developer D flowing down from the substrate G ( The downstream side is blown by a predetermined flow rate (for example, 300 to 公f ^, the seven-green substrate is stretched in the width direction to form a curtain, and the developer to the rear of the substrate (upstream side) does not form a strip shape θ It extends to the vicinity of the substrate ridge Ga in the state of the ruthenium film. The μ Ϊ ^ if if if ( ( 下 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The first rinsing nozzle 22 in the vicinity of the slab portion Ga directly flows at a low flow rate toward the substrate through which the substrate liquid D passes (for example, the rinsing nozzle 22 is disposed at a distance from the substrate surface, for example, two sides, and is approximately vertically downward ( 4 〇 _ ) 。 。 。 。 _ 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第/ 201032267 _ s+) spit out the flushing fluid s 'completely replace the developing (four) into a punch The liquid nozzle s. The first nozzle 23 is disposed, for example, at a height of about 3 mm from the substrate surface, and is discharged toward the substrate transport direction (downstream side). That is, the flush 3 as shown in FIG. 3 = straight downward (vertical direction). In the case where the injection direction is inclined toward the downstream side by a predetermined angle Θ2 (for example, 0 to 70.), the state is arranged at the upper side of the transport section, and the first ridge is formed at the upper section of the transport section, and the third transport section M3 constitutes the first ridge. The delivery roller 6 of 2a is arranged as shown in Fig. 3. That is, if the height of the most remaining conveyance 6 in the =2a is 2, the height of the conveyance roller 6 at the most position is, for example, 〇~ 9mm = j is very large, and the height should be properly set. The airflow 'the axial fluid D is more easily extended to be thin. 2 The supply position of the airflow of the gas knife 21 and the first flushing nozzle 22 are discharged. The distance between the liquid and the supply position is set to, for example, 2 () to 4 () positions (preferably, +Till and 'on the substrate G, the supply position of the air jet 21 to the air flow 盥 2 == ^! The distance between them is set to 4, _ 5敝 of the example 敝 1 触 纽 纽 纽 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( The state of the substrate G replacement processing liquid which is transported to the transport sections _ and M3 is displayed, and the developing solution S state is shown in Fig. 5. _ 》 </ RTI> The substrate 0 of the roller portion f on the grid G on this day is At a certain speed (for example, 60 ugly, s), when V) 1 is used, first, in the developing unit 3, the substrate G is transporting the three nozzles of the liquid D. The developing speed is applied to the substrate G at a sweep speed of the same speed and the same conveying speed. ^ The liquid D is collected by the chassis 1〇. The developing stage M plate liquid G overflowing from the substrate G, M2 ^ the rising slope portion of the ridge portion 2a which forms the mountain shape = the younger 2 When it is sent to the second transport _ Μ 2, the developer d 15 201032267 on the substrate starts to move downward or rearward due to gravity. The 'air knife 21 of one blows a high-pressure airflow of liters/min) which is determined by your U) through the substrate G below it. The upper end portion of the developer D under the substrate 2 to 500 transport substrate G flows from the curtain-like airflow blown by the substrate transport direction. It will break the airflow toward the substrate transport direction from the upper end portion of the developer D flowing down from the substrate G, as shown in the figure (°2'θ because the range is enlarged (and the thin S1 at the rear side of the substrate is S1: /S) (4) The flow rate with a small impulse is supplied to the substrate G to the rinsing liquid f fi^+5(b), and the rinsing liquid which is formed on the substrate and the developing solution D (the thin film portion D2) is not separated by a too long distance. The thin film portion S1 of 8, the thin portion D2 of the developing solution D and the film body of the rinsing liquid s have a small width in the substrate transport direction of the region E, which is not correct, and, The effect of the plaque is affected. The thick film portion S2 which is not smashed, and the liquid s is washed out. The thin film portion S1 between the rinsing liquid S is transported to the third transporting zone (10). The top surface of the substrate G is completely stopped as shown in Fig. 5 (4). The developing solution and the rinsing liquid in the front are collected by the chassis 。. The processing liquid on the soil plate G is replaced with the developing solution D into the rinsing liquid, s 16 201032267 2 The curtain-like airflow blown by the air nozzle 21 flows from the inclined surface of the substrate. • The developer D extending to the substrate is extended. In the vicinity of the portion Ga, the rz/mouth 22 is directly supplied to the vicinity of the substrate ridge portion Ga to supply the rinsing liquid s. Therefore, the enthalpy removes the liquid, and can be developed on the substrate in an uninterrupted manner. The liquid D is replaced with the rinsing liquid s. ς 'With the curtain air flow, the first rinsing nozzle 22 circulates the rinsing liquid 22 and does not flow to the opposite side of the conveying direction (the second conveying interval Μ 2), so There is almost no mixing between the hood liquid D and the rinsing liquid S. (4) There is no time for the developer sputum to be left in a state where the developer sputum flows and remains in a spot like the conventional technique, so that generation of development spots can be suppressed. , charm, ϋί?? *21 sprayed curtain airflow, toward the substrate transport direction (downstream illusion i't shirt liquid D does not ripple, can suppress the generation of small development spots. ^ Processed substrate G, By the horizontal fourth transport section leg, the upper slanting section M5 climbs up the ascending oblique path of the second ridge 2b. At this time, the upper replacement rinsing liquid moves downward from the front end side of the substrate by gravity, and then descends. Furthermore, the rinsing liquid supplied from the upper rinsing nozzle 24 on the substrate G' The old rinsing liquid is washed away, and the rinsing liquid which is dropped from the base flow to the rear of the substrate is collected by the chassis 17. If the apex of the substrate G is left, a thin liquid for washing the rinsing liquid remains on the top surface thereof. In the film=state, the descending inclined path spans to the second raised portion 2b (the sixth transporting step), when the substrate G moves downward in the descending inclined path (M6) of the second raised portion 2b, the upper flushing nozzle 25 is on the substrate. G supply ^ jj = odd rinse liquid (4) ground - the first wash on the substrate G flows down from the front end of the substrate. The rinse liquid that flows down to the front of the substrate G is the substrate of the substrate G. 'The seventh round of the horizontal M7' climbs up the rising and lowering of the step 2c in the next eighth transport section M8. At this time, the processing rinsing liquid previously on the substrate G flows downward from the substrate side by the gravity of the substrate θ 17 201032267 and flows downward from the rear end of the substrate. Further, the upper rinsing nozzle 26 supplies the rinsing liquid for the final washing on the slab G, and the new rinsing liquid pushes the old rinsing & and flows down from the rear end of the substrate together. The rinsing liquid flowing down to the rear of the substrate G is collected by the chassis 17. Then, when the high-lower difference portion 2c on the substrate enters the upper conveyance path of the ninth conveyance section M9 on the side of the drying section 5, the air knife 2 吹 blows the turbulent airflow in the opposite direction to the direction of the rotation of the substrate G, thereby The rinsing liquid remaining on the substrate G is pushed toward the rear of the slab and blown out from the rear end of the substrate (liquid removal). The rinse liquid from the substrate G is collected by the chassis 17.美 美 The slab G which completes a series of development processing steps in the developing unit (DEV) 1 as described above is linearly moved on the transport path 2 and sent to the processing unit of the subsequent stage. As described above, in the embodiment of the present invention, the developing solution D is supplied and the flat disk is fed by the air jet 21 _ straight direction or the transporting mi direction is blown to the screen substrate G which is filament-shaped extending in the substrate width direction. The front end portion (upstream side) of the developer D to be removed is directly used by the first rinse nozzle 22 to the surface of the substrate on which the Hi' liquid D is removed. When the mouth is spit out, the impulse is large. = The position of the point is lowered. The developing solution D is flowing like the conventional technique. The residual spot 9 and the solid state are the air knife and the first flush. The mouthpiece 22 and the second flushing mouthpiece 23 are disposed in the i-th raised portion, and the === the curtain-like high pressure from the substrate to the developer = nozzle m1 rinse jet = 3⁄4 shadow = From the air knife 21 18 201032267, the air knife 21 and the first flush nozzle 22 are separately provided in this embodiment, but may be provided in an integrated configuration. The pressure of each of the nozzles is the same as that of the nozzles. The nozzles are extended toward the width of the substrate. The nozzles are not limited to this. In the case where the plurality of nozzles (for example, the nozzles of the spray nozzles) are ejected in the width direction of the substrate, the ejection flow rate is limited, so that the first flushing nozzle is vomited, and the first flushing nozzle 23 is discharged, and the impulse is smaller. The nozzle shape of the medium-sized washing nozzle 23 is the same, and the raw material (salt) of the substrate processing apparatus of the present invention can be used for the y (a) to (b). The plan view showing the state of the substrate passing through the first raised portion and the side view showing the mutual arrangement of the air knife disposed in the first raised portion and the first flushing/middle washing nozzle. The side view of the embarrassed state (9) indicates that the base of the substrate replacement treatment liquid conveyed by the first ridge is not shown in the figure of the stencil. Top view of the structure and side view. Figure. a) to () is a plan view and a side view of the structure of the rinsing unit. [Main element symbol description] 1: Developing unit (substrate processing device) 2: Transport path (substrate transport path) 2a: 1st ridge Part 19 201032267 2b: 2nd raised portion 2c: stepped portion - 3: developing unit 4, 200: flushing unit 5: drying unit 6: roller 9: developing solution supply nozzle (first processing liquid supply means) 10, 17: Chassis 11, 18: drain pipe 12: developer reusing mechanism φ 20, 204: air knife 21: air knife (gas supply mechanism) 22: first flushing nozzle (first flushing liquid supply mechanism) 23: second flushing Nozzle (second rinse liquid supply mechanism) 24: third rinse nozzle 25: fourth rinse nozzle 26: fifth rinse nozzle 30: outer casing 30a, 30b: partition walls 31, 32: opening® 33, 34: fan 35, 36 Air filter 37: exhaust mechanism 38: exhaust port 201: transport roller 202: transport path 203: rinse liquid supply nozzle A: process line D, D Bu D2: developer (first treatment liquid) d: distance 20 201032267 E: Liquid removal area G: substrate to be processed Ga: substrate ridge portion L: strip portion
Ml〜M9·.第1輸送區間〜第9輸送區間 P1〜P8:第1區間變更點〜第8區間變更點 S、SI、S2:沖洗液（第2處理液） X、Y、Z:轴 Θ1、Θ2:夾角M1 to M9·. First transport section to ninth transport section P1 to P8: First section change point to eighth section change point S, SI, S2: rinse liquid (second treatment liquid) X, Y, Z: axis Θ1, Θ2: angle
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