TW201026814A - Method for manufacturing electrical element - Google Patents

Method for manufacturing electrical element Download PDF

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Publication number
TW201026814A
TW201026814A TW098139069A TW98139069A TW201026814A TW 201026814 A TW201026814 A TW 201026814A TW 098139069 A TW098139069 A TW 098139069A TW 98139069 A TW98139069 A TW 98139069A TW 201026814 A TW201026814 A TW 201026814A
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TW
Taiwan
Prior art keywords
adhesive
semi
hardened layer
ultraviolet
dicing
Prior art date
Application number
TW098139069A
Other languages
English (en)
Other versions
TWI495703B (zh
Inventor
Takeshi Saito
Tomomichi Takatsu
Original Assignee
Denki Kagaku Kogyo Kk
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Publication date
Application filed by Denki Kagaku Kogyo Kk filed Critical Denki Kagaku Kogyo Kk
Publication of TW201026814A publication Critical patent/TW201026814A/zh
Application granted granted Critical
Publication of TWI495703B publication Critical patent/TWI495703B/zh

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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
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201026814 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種將附黏合劑半硬化層半導體晶圓 進行切粒成晶粒狀時之電子零件之製法。 【先前技術】 電子零件的製法之一，已知有一種製法係具備以下步 驟：將在晶圓或絕緣基板上形成有複數電路圖案而成之電 子零件集合體貼合在黏著片之貼合步驟；將貼合後的晶圓 〇 或電子零件集合體各個切斷而晶粒化之切斷、分離步驟（切 粒步驟）；從黏著片側進行照射紫外線來降低黏著劑層的黏 著力之紫外線照射步驟；從黏著片拾取被切斷後的晶粒之 拾取步驟；及在所拾取的晶粒底面塗布黏合劑後藉由該黏 合劑將晶粒固定在導線框架等之固定步驟。 在切斷步驟，已知有一種方法係將晶圓或電子零件集 合體貼合在黏著片，進而將黏著片固定於導線框架後，進 行切斷並分離（切粒）成爲各個晶粒之方法。 ® 有提案揭示一種使用藉由在該製法所使用的黏著片積 層晶粒黏貼膠膜（die attach film)，而兼備切粒用的黏著片 的功能及將晶粒固定在導線框架等的黏合劑的功能之黏著 片（晶粒黏貼薄膜整體型片）之方法（參照專利文獻1、專利 文獻2)。藉由將晶粒黏貼薄膜整體型片使用於製造電子零 件，能夠省略切粒後的黏合劑塗布步驟。晶粒黏貼薄膜整 體型片相較於使用黏合劑來黏接晶粒與導線框架之方法， 係控制黏合劑部分的厚度或抑制黏合劑的擠出優良。晶粒 -4- 201026814 黏貼薄膜整體型片係被利用於製造晶粒尺寸封裝、堆疊封 裝及系統級封裝（system-In-Package)等的電子零件。 有一種製法係預先將粒狀黏合劑塗布在半導體晶圓 上，並藉由加熱或照射紫外線來使其半硬化成爲片狀而形 成黏合劑半硬化層，能夠省略切粒後的黏合劑塗布步驟。 但是，隨著半導體的高積體化，晶粒尺寸大幅地變薄， 切粒後的晶粒拾取作業變爲困難的情況增加。而且，因爲 切粒時不僅是半導體晶圓，亦將黏合劑半硬化層及黏著片 ® 的黏著劑層切粒，所以切粒線係產生黏合劑半硬化層及黏 著劑層的摻雜，即便在切粒後進行照射紫外線能夠充分地 謀求降低黏著力，亦會有拾取時的剝離容易性變差，致使 拾取不良之情形。 [專利文獻1]特開2006-049509號公報 [專利文獻2]特開2007-24663 3號公報 【發明內容】 本發明係鑒於上述情形而進行，能夠提供一種在拾取 時之黏著片與黏合劑半硬化層之間的剝離容易，如此，能 夠容易地進行切粒後的晶粒拾取作業之半導體晶圓的切粒 方法。 依照本發明，係提供一種附黏合劑半硬化層半導體晶 圓之切粒方法，其係具備以下步驟： 在半導體晶圓的背面塗布糊狀黏合劑，並藉由對該糊 狀黏合劑加熱或照射紫外線使其半硬化爲薄片狀而形成黏 合劑半硬化層之步驟；將在基材薄膜積層紫外線硬化型黏 201026814 著劑而成之黏著片貼合在該黏合劑半硬化層之貼合步驟； 對上述紫外線硬化型黏著劑進行照射紫外線之紫外線照射 步驟；以及將貼合於前述黏著片之該黏合劑半硬化層及該 半導體晶圓進行切粒之切粒步驟。 依照本發明之一個態樣’前述紫外線硬化型黏著劑係 至少含有（甲基）丙烯酸酯聚合物、具有4個以上的乙烯基 之丙烯酸胺基甲酸酯低聚物、紫外線聚合引發劑及聚矽氧 接枝聚合物。又，依照一個態樣，前述黏合劑半硬化層係 ® 至少含有環氧樹脂、聚醯亞胺樹脂、丙烯酸樹脂、聚矽氧 樹脂，且前述黏合劑半硬化層的厚度爲10微米以上。 依照該切粒方法，藉由預先使紫外線硬化型黏著劑的 黏著力降低且同時提高凝集力，在切粒後拾取附黏合劑半 硬化層時，能夠降低黏合劑半硬化層及黏著劑層摻雜至切 粒線。因此，能夠抑制拾取不良。 而且，在切粒步驟後，當然亦可以與先前方法同樣地， 設置再次的照射紫外線步驟。 _ 【實施方式】 實施發明之形態 以下，說明本發明的實施形態。 在本說明書，單體係意味著單體本身或是來自單體之 結構。本說明書的份及％，只要未特別記載時係設作質量 基準》 又，在本說明書，（甲基）丙烯醯基係丙烯醢基及甲基 丙烯醯基的總稱。（甲基）丙烯酸等含（甲基）的化合物等亦同 201026814 樣地，係名稱中具有「甲基」的化合物與未具有「甲基」 的化合物的總稱。紫外線聚合性化合物之丙烯酸胺基甲酸 酯低聚物的官能基數係指每1個丙烯酸胺基甲酸酯低聚物 分子之乙烯基數。 <紫外線照射步驟> 紫外線的光源係沒有特別限定，能夠使用眾所周知 者。作爲紫外線源，可舉出黑光燈、低壓水銀燈、高壓水 銀燈、超高壓水銀燈、鹵化金屬燈、準分子燈等。 〇 紫外線的照射量係沒有特別限定，能夠依照紫外線硬 化型黏著劑的設計而適當地選擇，通常係以5mJ/Cm2以 上、小於1 000mJ/Cm2爲佳。照射光量少時，紫外線硬化翠 黏著劑的硬化不充分，會有拾取性變差之傾向，照射光量 木多時，因爲UV照射時間的長期化，致使作業性變差。 <紫外線硬化型黏著劑> 紫外線硬化型黏著劑能夠採用先前眾所周知者。紫外 線硬化型黏著劑的成分及被紫外線照射時之作用，係藉由 β 主劑亦即基質聚合物來使黏著力發揮，及藉由接受紫外線 的紫外線聚合引發劑來使具有不飽和鍵的紫外線聚合性化 合物成爲三維網狀結構而使其硬化（降低黏著力）。爲了提 升拾取性，以（甲基）丙烯酸酯聚合物作爲上述基質聚合 物’且以具有4個以上的乙烯基之丙烯酸胺基甲酸酯低聚 物作爲上述紫外線硬化性化合物爲佳，以進而含有紫外線 聚合引發劑及聚矽氧接枝聚合物爲佳。 作爲基質聚合物能夠使用通常已知的（甲基）丙烯酸酯 201026814 聚合物、橡膠系黏著劑等。 (甲基）丙烯酸酯聚合物係將（甲基）丙烯酸酯單體聚合 而成之聚合物。又，（甲基）丙烯酸酯聚合物係亦可含有（甲 基）丙烯酸酯單體以外的乙烯基化合物單體。 作爲（甲基）丙烯酸酯的單體可舉出例如（甲基）丙烯酸 丁酯.、（甲基）丙烯酸2-丁酯、（甲基）丙烯酸第三丁酯、（甲 基）丙烯酸戊酯、（甲基）丙烯酸辛酯、（甲基）丙烯酸2-乙基 己酯、（甲基）丙烯酸壬酯、（甲基）丙烯酸癸酯、（甲基）丙烯 〇 酸月桂酯、（甲基）丙烯酸甲酯、（甲基）丙烯酸乙酯、（甲基） 丙烯酸異丙酯、（甲基）丙烯酸十三酯、（甲基）丙烯酸肉豆蔻 酯、（甲基）丙烯酸鯨蠟酯、（甲基）丙烯酸硬脂酸酯、（甲基） 丙烯酸環己酯、（甲基）丙烯酸異佛爾酮、（甲基）丙烯酸二環 戊酯、（甲基）丙烯酸苄酯、（甲基）丙烯酸甲氧基乙酯、（甲 基）丙烯酸乙氧基乙酯、（甲基）丙烯酸丁氧基甲酯、及（甲基） 丙烯酸乙氧基正丙酯、（甲基）丙烯酸2-羥基乙酯、（甲基） 丙烯酸2-羥基丙酯及（甲基）丙烯酸2-羥基丁酯等。 ® 作爲乙烯基化合物單體可適合使用具有由羥基、羧 基、環氧基、醯胺基、胺基、羥甲基、磺酸基、胺基磺酸 基、及（亞）磷酸酯基所組成群組之1種以上者。 作爲具有羥基的乙烯基化合物單體可舉出例如乙烯醇 等。 作爲具有羧基的乙烯基化合物單體可舉出例如（甲基） 丙烯酸、巴豆酸、順丁烯二酸、順丁烯二酸酐、伊康酸、 反丁烯二酸、丙烯醯胺N-乙醇酸及桂皮酸等》 201026814 作爲具有環氧基的乙烯基化合物單體可舉出例如烯丙 基環氧丙基醚及（甲基）丙烯酸環氧丙基醚等。 作爲具有醢胺基的乙烯基化合物單體可舉出例如（甲 基）丙烯醯胺等。 作爲具有胺基的乙烯基化合物單體可舉出例如（甲基） 丙烯酸N，N-二甲基胺基乙酯等。 作爲具有羥甲基的乙烯基化合物單體可舉出例如N-羥 甲基丙烯醯胺等。 ❺ (甲基）丙烯酸酯聚合物的製法能夠使用乳化聚合、溶 液聚合等。考慮拾取性時，以能夠藉由乳化聚合來製造的 丙烯酸橡膠爲佳。 作爲橡膠系黏著劑係例如有天然橡膠、合成異戊二烯 橡膠、苯乙烯丁二烯橡膠、苯乙烯-丁二烯嵌段共聚物、苯 乙烯-異戊二烯嵌段共聚物、丁基橡膠、聚異丁烯、聚丁二 烯’聚乙烯醚、聚矽氧橡膠、聚乙烯基異丁基醚、氯丁二 烯橡膠、丁腈橡膠、接枝橡膠、再生橡膠、苯乙烯-乙烯-® 丁烯-嵌段共聚物、苯乙烯-丙烯-丁烯-嵌段共聚物、苯乙烯 -異戊二烯-嵌段共聚物、聚異丁烯-乙烯-丙烯共聚物、乙烯 乙酸乙烯酯共聚物、聚異丁烯-矽橡膠、聚乙烯基異丁基醚 -氯丁二烯等，該等不僅是單獨物亦可以是混合物。 上述紫外線聚合性化合物係指能夠藉由照射紫外線而 三維網狀化之在分子內至少具有2個以上光聚合性碳-碳雙 鍵之低分子量化合物，例如有丙烯酸酯化合物、丙烯酸胺 基甲酸酯低聚物。作爲丙烯酸酯化合物有三羥甲基丙烷三 201026814 丙烯酸酯、四羥甲基甲烷丙烯酸酯、新戊四醇三丙烯酸醋、 新戊四醇四丙烯酸酯、二新戊四醇一羥基五丙烯酸酯、二 新戊四醇六丙烯酸酯、1，4-丁二醇二丙烯酸酯、ι，6-己二醇 二丙烯酸酯、聚乙二醇二丙烯酸酯、三聚氰酸丙烯酸三乙 酯、市售的丙烯酸低聚酯。 作爲丙烯酸胺基甲酸酯低聚物，係能夠使聚酯型或聚 醚型等的多元醇化合物與多價異氰酸酯化合物、例如2,4_ 甲苯二異氰酸酯、2,6-甲苯二異氟酸酯、1，3_二甲苯二異氰 酸酯、1,4-二甲苯二異氰酸酯、二苯基甲烷4,4-二異氰酸 酯、三甲基六亞甲基二異氰酸酯、六亞甲基二異氰酸酯、 異佛爾酮二異氰酸酯等反應而得到之在末端具有異氰酸胺 基甲酸酯預聚物，與具有羥基之（甲基）丙烯酸酯、例如（甲 基）丙烯酸2-羥基乙酯、（甲基）丙烯酸2-羥基丙酯、聚乙二 醇（甲基）丙烯酸酯、新戊四醇三丙烯酸酯、去水甘油二（甲 基）丙烯酸酯、二新戊四醇一羥基五丙烯酸酯等反應而得 到。作爲紫外線及/或放射線聚合性化合物，以具有4個以 上的乙烯基之丙烯酸胺基甲酸酯低聚物爲佳。 紫外線聚合性化合物的調配量係沒有特別限定，相對 於1〇〇質量份基質聚合物，以20質量份以上、200質量份 以下爲佳。紫外線聚合性化合物的調配量比20質量份少 時’照射紫外線後的紫外線硬化型黏著劑的硬化不充分， 致使黏著片與黏合劑半硬化層不容易剝離，會有拾取性產 生問題之情形。又，比200質量份多之過剩調配量時，照 射紫外線後的紫外線硬化型黏著劑的硬化進行，切粒時會 -10- 201026814 有晶粒飛散之情形，同時反應殘渣產生微小的殘糊，在將 黏附有黏合劑半硬化層的晶粒搭載在導線框架上時，會有 在加溫時產生黏接不良之情形》 作爲上述紫外線聚合引發劑，具體上可舉出例如4-苯 氧基二氯乙醯苯、4-第三丁基二氯乙醯苯、二乙氧基乙醯 苯、2_羥基-2-甲基-1-苯基丙烷-1-酮、1-(4-異丙基苯基）-2-羥基-2-甲基丙烷-1-酮、1-4-(十二烷基苯基）-2-羥基-2-甲基 丙烷-1-酮、4-(2-羥基乙氧基）苯基（2-羥基-2-丙基）酮、1-羥基環己基苯基酮、2-甲基-1-[4-(甲硫基）苯基]-2-味啉基 丙烷-1等的乙醯苯系紫外線聚合引發劑、苯偶姻、苯偶姻 甲基醚 '苯偶姻乙基醚、苯偶姻丙基醚、苯偶姻丁基醚、 2,2-二甲氧基-2-苯基乙醯苯等的苯偶姻系紫外線聚合引發 劑、二苯基酮、苯甲醯基苯甲酸、苯甲醯基苯甲酸甲酯、 4-苯基二苯基酮、羥基二苯基酮、4-苯甲醯基-4’·甲基二苯 基硫醚、3,3’-二甲基-4-甲氧基二苯基酮等的二苯基酮系紫 外線聚合引發劑、噻噸酮、2 -氯噻噸酮、二甲基噻噸酮、 2，4-二甲基噻噸酮、異丙基噻噸酮、2，4-二氯噻噸酮、2，4-二乙基噻噸酮、2，4-二異丙基噻噸酮等的噻噸酮系紫外線 聚合引發劑、醯基肟酯、醯基氧化膦、乙醛酸甲基苯酯、 苯偶醯、樟腦醌、二苯并環庚酮、2-乙基蒽醌、4’，4，，-二乙 基間苯二甲醯基苯等的特殊紫外線聚合引發劑等。 紫外線聚合引發劑的調配量係沒有特別限定，相對於 1〇〇質量份紫外線聚合性化合物，以0.1〜15質量份爲佳。 太少時在照射紫外線時硬化作用不足，會有黏著力的降低 -11- 201026814 不充分之傾向，太多時變爲過剩，會有在熱或螢光燈下的 安定性變差之傾向。 爲了提升拾取性，必要時亦可以在紫外線硬化型黏著 劑調配聚矽氧接枝聚合物。藉由採用該聚矽氧接枝聚合 物，能夠使黏合劑半硬化層與紫外線硬化型黏著劑的界面 之黏著性降低。 聚矽氧接枝聚合物係除了聚合在聚矽氧分子鏈的末端 具有乙烯基的單體（以下稱爲「聚矽氧大分子單體」）這一 e 點以外沒有特別限定，可舉出例如聚矽氧大分子單體的同 元聚合物、或聚矽氧大分子單體與其他乙烯基化合物之共 聚物。聚矽氧大分子單體係適合使用聚矽氧分子鏈的末端 爲（甲基）丙烯醯基或苯乙烯基等的乙烯基之化合物。 作爲其他的乙烯基化合物，以與在黏著劑所調配的其 他聚合物的相溶性高之（甲基）丙烯酸單體爲佳。因爲使用 相溶性高者，黏著劑整體變爲均勻。 矽接枝聚合物的調配量係沒有特別限定，相對於100 β 質量份基質聚合物，以0.1質量份以上、10質量份以下爲 佳。矽接枝聚合物的調配量小於0.1質量份時，黏著片與 黏合劑半硬化層不容易剝離，會有晶粒的拾取性產生問題 之情形。又，比10質量份多之過剩調配量時，初期的黏著 力降低，在切粒時會有從環框架（ring frame)剝離之情形。 在紫外線硬化型黏著劑，爲了任意地設定初期黏著 力，亦可按照必要而調配硬化劑。藉由採用該硬化劑，來 提高作爲黏著劑之凝集力，即便照射紫外線前（未照射）的 -12- 201026814 狀態’貼合時亦不會產生污染，而能夠得到再剝離性。 作爲硬化劑’有異氰酸酯系、環氧系、π環丙院系等 物’該等不僅是單獨物亦可以是混合物。作爲上述異氰酸 酯係多價異氰酸酯、例如有2,4-甲苯二異氰酸醋、2,6_甲苯 二異氰酸酯、1，3-二甲苯二異氰酸酯、1，4_二甲苯二異氰酸 酯、二苯基甲烷-4,4’-二異氰酸酯、二苯基甲烷_2,4，_二異 氰酸酯、3_甲基二苯基甲烷二異氰酸酯、六亞甲基二異氰 酸酯、異佛爾酮二異氰酸酯、二環己基甲烷-4,4’-二異氰酸 酯、二環己基甲烷-2，4’-二異氰酸酯、離胺酸二異氰酸酯、 伸苯基二異氰酸酯、甲苯二異氰酸酯、二苯基甲烷二異氰 酸酯、環己烷二異氰酸酯等。 紫外線硬化型黏著劑通常係以5〜70微米的厚度形 成。這是因爲太厚時藉由照射紫外線的硬化變慢，太薄時 無法將黏著力設定爲較高之緣故。在該黏著劑能夠適當地 選擇先前眾所周知的黏著賦予樹脂、塡料、防老劑、軟化 劑、安定劑或著色劑等而添加。 <黏著片> 黏著片係藉由在基材薄膜上塗布紫外線照射型黏著劑 來製造，且係由基材薄膜及在該基材薄膜上積層而成的紫 外線照射型黏著劑層所構成。基材薄膜的厚度以30微米以 上爲佳，以60微米以上爲更佳。又，基材薄膜的厚度以 3 00微米以下爲佳，以200微米以下爲更佳。 基材薄膜的原料係例如有聚氯乙烯、聚對酞酸乙二 酯、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸-丙烯酸酯薄膜' -13- 201026814 乙烯-丙烯酸乙酯共聚物、熱塑性烯烴系彈性體、聚乙烯、 聚丙烯、聚丙烯系共聚物、乙烯-丙烯酸共聚物、及使用金 屬離子將乙烯-(甲基）丙烯酸共聚物或乙烯甲基）丙烯酸 -(甲基）丙烯酸酯共聚物等交聯而成之離子聚合物樹脂。基 材薄膜亦可使用該等樹脂的混合物、共聚物及多層薄膜等。 在上述原料中，基材薄膜的原料以使用離子聚合物樹 脂爲佳。離子聚合物樹脂之中，因爲具有抑制產生鬚狀的 切削屑之效果，以使用Na+、Κ+、Zn2 +等的金屬離子將具 ® 有乙烯單位、（甲基）丙烯酸單位及（甲基）丙烯酸烷酯單位之 共聚物交聯而成之離子聚合物樹脂爲佳。 基材薄膜的成型方法係例如有壓延機成形法、T字型 模頭擠出法、吹塑法及鑄塑法等。 在基材薄膜上形成紫外線照射型黏著劑層而作爲黏著 片之方法，係例如有使用凹版塗布器、刮刀式塗布器（comma coater)、棒塗布器、刮刀塗布器（knife coater)或輥塗布器 等塗布器將黏著劑直接塗布基材薄膜之方法。亦可使用凸 胃 版印刷、平版印刷、柔版（flexo)印刷、膠版印刷或網版印 刷等將黏著劑印刷在基材薄膜上。 <黏合劑半硬化層> 黏合劑半硬化層係在半導體晶圓的背面亦即用以與導 線框架電路基板黏接之非電路形成面，全面塗布糊狀黏合 劑，並對其加熱或照射紫外線使其半硬化成爲片狀’來形 成黏合劑半硬化層。 黏合劑半硬化層的材質可以是通常所使用的黏著劑或 -14- 201026814 黏合劑的成分。作爲黏著劑係例如有環氧樹脂、聚醯胺、 丙烯酸酯及聚醯亞胺等。作爲黏合劑係例如有丙烯酸酯、 乙酸乙烯酯、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸酯共 聚物、聚醯胺、聚乙烯、聚颯、環氧樹脂、聚醯亞胺、聚 醯胺酸、矽、苯酚、橡膠聚合物、氟橡膠聚合物及氟樹脂 等，以聚醯亞胺爲佳。 黏合劑半硬化層能夠使用該等黏著劑或黏合劑成分的 混合物、共聚物及積層體。在黏合劑半硬化層，亦可按照 ❹ 必要混合硬化劑、紫外線聚合引發劑、防靜電劑、硬化促 進劑等的添加劑。 [實施例] <實驗材料的調製> 實施例之各種實驗材料係依照以下的處方製造。 作爲黏著片的材料係備齊如以下者。 基質聚合物：在54 %丙烯酸乙酯、22 %丙烯酸丁酯、24 % 丙烯酸甲氧基乙酯的共聚物，藉由懸浮聚合而彳脣到之（甲基） ® 丙烯酸酯聚合物（本公司聚合品） 紫外線聚合性化合物A:在使聚（環氧丙烷）二醇的末端 •與六亞甲基二異氰酸酯（脂肪族二異氰酸酯）的三聚物反應 而成之未端異氰酸酯低聚物，進而與二新戊四醇五丙烯酸 酯反應而成之末端丙烯酸酯低聚物。數量平均分子量（Μη) 爲3，700且丙烯酸酯官能數爲15個（15官能）的丙烯酸胺基 甲酸酯低聚物（本公司聚合品） 紫外線聚合性化合物Β:新戊四醇五丙烯酸酯（新中村 -15- 201026814 化學工業公司製NK ESTER A-TMM-3L) 紫外線聚合引發劑：苄基二甲基縮酮（CIBA JAPAN公 司製IRGACURE 651(註冊商標）） 聚矽氧接枝聚合物：將30質量份聚矽氧接枝低聚物、 20質量份丙烯酸丁酯、30質量份甲基丙烯酸甲酯及20質 量份丙烯酸2-羥基甲酯聚合而成之矽接枝聚合物（本公司 聚合品） 矽接枝低聚物：在矽分子鏈的末端具有甲基丙烯醯基 © 之矽接枝低聚物（本公司聚合品） 硬化劑：1,6-六亞甲基二異氰酸酯的三羥甲基丙烷加 成物（日本POLYURETHANE公司製CORONATE(註冊商標）） 對應各實驗號碼之黏著劑的主要成分及其調配量係如表1 所示，在調製各黏著劑時，係添加該等在表中所示的成分 並調配3質量份的硬化劑。 [表1] 實驗編號 1 2 3 4 5 6 7 8 9 10 紫外線硬化 型黏著劑 基質聚潍 100 100 100 100 100 100 100 100 100 100 紫外線聚潍化合物 A100 A100 A100 A100 A100 A100 A20 A200 A10 A300 紫外線聚合引發劑 5 5 5 5 5 5 1 10 0.5 15 矽接枝聚合物 2 2 2 2 2 2 2 2 2 2 紫外線照射 步驟 光置(rnJ/cm2) 150 5 1000 1 1500 0 150 150 150 150 黏合劑糊 化層 A A A A A A A A A A wm 晶粒保持性 ◎ ◎ ◎ ◎ 〇 ◎ ◎ ◎ 〇 〇 拾取性 ◎ ◎ ◎ 〇 ◎ X ◎ ◎ 〇 ◎ 切粒性 ◎ ◎ ◎ 〇 ◎ X ◎ ◎ 〇 ◎ 綜合 ◎ ◎ ◎ 〇 〇 X ◎ ◎ 〇 〇 備考 實施例 實施例 實施例 實施例 實施例 比較例 實施例 實施例 實施例 實施例 -16- 201026814 實驗編號 11 12 13 14 15 16 17 18 19 20 紫外線硬化 型黏著劑 基質聚雜 100 100 100 100 100 100 100 100 100 100 紫外線聚合性化雜 A100 A100 A100 A100 A100 A100 A100 A100 B100 A100 紫外線聚合引發劑 0.1 15 0.05 20 5 5 5 5 5 5 矽接枝聚合物 2 2 2 2 0.1 10 0.01 15 0 2 紫外線照射 步嫌 光置(mJ/cm2) 150 150 150 150 150 150 150 150 150 150 黏飾视 itm A A A A A A A A A B 關 晶粒 ◎ ◎ ◎ 〇 ◎ ◎ ◎ 〇 ◎ ◎ 拾取性 ◎ ◎ 〇 ◎ ◎ ◎ 〇 ◎ 〇 ◎ 切粒性 ◎ ◎ 〇 〇 ◎ ◎ 〇 ◎ 〇 ◎ 綜合 ◎ ◎ 〇 〇 ◎ ◎ 〇 〇 〇 ◎ «**·-*» 實施例 實施例 實施例 實施例 實施例 實施例 實施例 實施例 實施例 實施例 隨後，將黏著劑塗布在PET分離薄膜上，且以乾燥後 的黏著劑層的厚度爲10微米之方式塗布，並層積於基材薄 膜來得到黏著片。作爲基材薄膜係使用由以乙烯-甲基丙烯 酸·甲基丙烯酸烷酯共聚物的Zn鹽作爲主體之離子聚合物 樹脂所構成，熔體流動黏度（MFR)爲1.5克/10分鐘（JIS K7210、210°C)、熔點爲 96°C、含 Zn2 +離子之薄膜（Mitsui Dupont Polychemical 公司製 Hymiranl650(註冊商標））》 作爲黏合劑半硬化層係備齊如以下者。 黏合劑半硬化層A :使用環氧系黏合劑作爲糊狀黏合劑， 並全面塗布在直徑爲8英吋X厚度0.1毫米的半導體晶圓的 背面，並在110 °C加熱3分鐘而成之厚度爲30微米之薄片。 黏合劑半硬化層B:使用含有丙烯酸樹脂及環氧樹脂的黏 合劑作爲糊狀黏合劑，並全面塗布在直徑爲8英吋χθ.1毫 米的半導體晶圓的背面，並在氮氣環境下使用高壓水銀燈 照射紫外線1000mJ/cm2而成之厚度爲30微米之薄片。 <貼合步驟> 使用TECHNOVISION製FM-3343，並將黏著片黏在半 -17- 201026814 導體晶圓的背面所形成的黏合劑半硬化層上。 <照射紫外線步驟> 使用高壓水銀燈從上述貼合步驟的試料之黏著片側照 射紫外線1 50mJ/cm2。 <切粒步驟> 黏著片的切入量爲25微米。切粒係以1〇毫米χίο毫 米的晶粒尺寸來進行。切粒裝置係使用 DISCO公司製 DAD341。切粒刀片係使用 DISCO公司製NBC- ZH205 0 〇 -27HEEE » 切粒刀片形狀：外徑爲55.56毫米、刀刃寬度：35微米、 內徑爲19.05毫米 切粒刀片轉速：40,000rpm 切粒刀片前進速度：50毫米/秒
切削水溫度：2 5 °C 切削水：1 .〇升/分鐘 <切粒步驟> ® 切粒裝置係使用Canon Machinery公司CAP-3 00 U。 針銷（needle pin)數目：5 針銷高度：0.3毫米 擴展量：4毫米 <實驗結果的評價> 晶粒保持性：評價使用前述條件將半導體晶圓切粒時’附 黏合劑半硬化層的晶粒被保持在黏著片的數目。 ◎(優）：被保持在黏著片的晶粒爲9 5 %以上 -18 ~ 201026814 〇（良）：被保持在黏著片的晶粒爲90%以上、小於95% x(差）：被保持在黏著片的晶粒爲小於90 % 拾取性：評價使用前述條件將半導體晶圓切粒時’能夠以 黏附有黏合劑半硬化層的狀態將晶粒拾取的數目。 ◎(優）：能夠拾起95%以上的晶粒。 〇（良）：能夠拾起80%以上、小於95%的晶粒。 x(差）：能夠拾起小於80%的晶粒。 切粒性：以黏附有黏合劑半硬化層的狀態將晶粒拾取後， 〇 使用顯微鏡的倍率爲300倍觀察20條黏著片的切粒線’評 價在黏著片有無黏合劑半硬化層的殘渣物。 ◎(優）：無黏合劑半硬化層的殘渣物 〇（良）：在10%以上的切粒線有黏合劑半硬化層的殘渣物 χ(差）：在50%以上的切粒線有黏合劑半硬化層的殘渣物 從表1的結果得知，比較例6的實驗，因爲未進行照 射紫外線，所以拾取性或切粒性差。相對地，在具有本發 明的構成之實施例，在切粒時之各特性評價，都得到良好
G 的結果。 依照本發明的切粒方法，藉由預先使紫外線硬化型黏 著劑的黏著力降低且同時提高凝集力，能夠抑制在切粒後 拾取附黏合劑半硬化層的晶粒時之拾取不良。 【圖式簡單說明】 無。 【元件符號說明】 無。 -19-

Claims (1)

  1. 201026814 七、申請專利範圍： 1. 一種附黏合劑半硬化層的半導體晶圓之切粒方法，其係 具備以下步驟： 在半導體晶圓的背面塗布糊狀黏合劑，並藉由對該 糊狀黏合劑加熱或照射紫外線使其半硬化爲薄片狀而形 成黏合劑半硬化層之步驟； 將在基材薄膜積層紫外線硬化型黏著劑而成之黏著 片貼合在該黏合劑半硬化層之貼合步驟； 〇 對上述紫外線硬化型黏著劑進行照射紫外線之紫外 線照射步驟；以及 將貼合於該黏著片之該黏合劑半硬化層及該半導體 晶圓進行切粒之切粒步驟。 2. 如申請專利範圍第1項之切粒方法，其中該紫外線硬化 型黏著劑係至少含有（甲基）丙烯酸酯聚合物、具有4個以 上的乙烯基之丙烯酸胺基甲酸酯低聚物、紫外線聚合引 發劑及聚矽氧接枝聚合物。 G 3.如申請專利範圍第1項之切粒方法，其中該黏合劑半硬 化層係至少含有環氧樹脂、聚醯亞胺樹脂、丙烯酸樹脂、 聚矽氧樹脂，且該黏合劑半硬化層的厚度爲1〇微米以 上。 -20- 201026814 四、指定代表圖： (一) 本案指定代表圖為：無。 (二) 本代表圖之元件符號簡單說明： Μ 〇 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式：
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