TW201021186A - Lead frame board, method of forming the same, and semiconductor device - Google Patents
Lead frame board, method of forming the same, and semiconductor device Download PDFInfo
- Publication number
- TW201021186A TW201021186A TW98132930A TW98132930A TW201021186A TW 201021186 A TW201021186 A TW 201021186A TW 98132930 A TW98132930 A TW 98132930A TW 98132930 A TW98132930 A TW 98132930A TW 201021186 A TW201021186 A TW 201021186A
- Authority
- TW
- Taiwan
- Prior art keywords
- connection terminal
- semiconductor element
- lead frame
- outer frame
- external connection
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- 238000000034 method Methods 0.000 title description 11
- 239000011347 resin Substances 0.000 claims abstract description 36
- 229920005989 resin Polymers 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 57
- 238000005530 etching Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229960002089 ferrous chloride Drugs 0.000 description 4
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000010485 coping Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- CQKBIUZEUFGQMZ-UHFFFAOYSA-N [Ru].[Au] Chemical compound [Ru].[Au] CQKBIUZEUFGQMZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L21/4832—Etching a temporary substrate after encapsulation process to form leads
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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Description
.201021186 六、發明說明: 【發明所屬之技術領域】 本發明係有關於適合組裝半導體元件之半導體封裝 基板或半導體裝置,尤其係有關於導線架基板及其製造方 法以及使用該導線架基板及其製造方法的半導體裝置。 【先前技術】 在由QFP(Quad Flat Package)所代表之使用導線架的 半導體封裝,用以和印刷配線基板連接的外導線係配置於 〇 半導體封裝的側面》 導線架於金屬板的雙面形成所要的光阻劑圖案,再從 雙面蝕刻,藉此,可得到半導體元件裝載部、屬於和半導 體元件電極之連接部的內導線、外導線、以及固定這些導 線的外框部。又,除了蝕刻工法以外,利用沖床的沖孔加 工亦可得到。 在有關半導體封裝的組立步驟方面,於半導體元件裝 載部打線接合半導體元件之後,使用金線等,電性連接半 ® 導體元件的電極和內導線。然後,對包含有內導線部的半 導體元件附近進行樹脂密封,裁斷外框部,並因應需要對 外導線施加彎曲加工。 然而,如此被設置於側面的外導線,從微細化的加工 性能來看,在約30mm正方的封裝尺寸,其接腳的限度爲 200 至 3 00 支。 近年來’隨著半導體元件的電極數增加,在側面具有 外導線之導線架型式的半導體封裝已無法應付端子數,部 201021186 分置換成 BGA (Ball Grid Aray 球格陣列)或 LGA (Land Grid A ray平面球格陣列)型式等在封裝基板底面將和印刷配線 基板的外部連接端子配置成陣列狀的半導體封裝。 這些所使用的基板,一般是以鑽頭對雙面貼銅玻璃環 氧樹脂基板鑽孔,並透過電鍍在孔內導通,一側面形成用 以和半導體元件之電極連接的端子,在另一側面形成排列 成陣列狀的外部連接端子。 可是,因爲這些基板之製造的步驟變得複雜、費用變 © 得昂貴,同時在基板內之配線連接使用電鍍,所以具有所 謂可靠性比導線架型式之封裝差的問題點。 因而,公開一種BGA型式的半導體封裝構造,其利 用將導線架從雙面蝕刻的步驟,並使用導線架(例如專利文 獻1)。 這是改變表裡之光阻劑的圖案,同時蝕刻,或者在蝕 刻一側後,將預模製樹脂塗布於蝕刻面表層後,從另一面 施加蝕刻,藉此,於一面形成半導體元件電極的連接端子, ® 並於另一面形成外陣列狀部連接端子。 [專利文獻] [專利文獻1]專利第364291 1號公報 【發明內容】 [發明所欲解決之課題] 第5A圖及第5B圖表示先前技術之導線架基板的剖 面圖。 在BGA型式的導線架,外部連接端子111的個數一 201021186 增加時,半導體元件電極連接端子109側的配線110變長。 此配線是將金屬板進行半蝕刻而製作,其寬度及厚度都 小,具有所謂在蝕刻以後的步驟發生折斷或彎曲而良率變 得很差的問題。 相對地,在例如專利文獻1所記載的技術公開,首 先,僅外部連接端子111側進行半蝕刻,在蝕刻面形成電 積聚醯亞胺層119後,以蝕刻形成半導體元件電極連接端 子109側。藉此,微細的配線110係由層薄膜之聚醯亞胺 ® 樹脂層119所載持,以避免在製作導線架時配線折斷或彎 曲。 可是,依據專利文獻1的技術,在將半導體元件裝載 於本構造之導線架基板,並利用打線接合方式連接半導體 元件電極和連接端子109時,因爲連接端子109的下部成 爲中空,所以線連接的力未作用,而發生連接不良,具有 顯著降低組立良率的問題點。 此外,(在專利文獻1雖未記載),在其他的對策方面, ® 亦想到一種技術,其替代電沈積聚醯亞胺層,而澆注預模 製樹脂,使樹脂層變厚。推測利用此對策可某程度地避免 接合不良的問題。可是,塗布量的調整很難,不是可完全 避免中空狀態者。 因而,若使用印刷技術對第2面塗布一定量的預模製 樹脂,則較均勻地形成樹脂層。雖然於外部連接端子上亦 形成樹脂層,但是因爲膜厚均勻,所以推測除去步驟變得 容易。 201021186 可是,在以往之外部連接端子11的構造(第6A圖、 第6B圖各自表示第1次蝕刻後的上視圖》),如直徑約 200~400μιη、高度約100〜180μιη般體積很大,擔心這根據 印刷條件在印刷後將氣泡捲入樹脂層,而擔心生產時顯著 降低良率的問題點。 第6C圖表示印後後使熱硬化的外部連接端子附近之 樹脂層的狀態。如在第6Α圖〜第6C圖以模式所示,擔心 對印刷方向(以箭號D1表示)在超過外部連接端子處前形成 馨氣泡的問題點。 本發明係鑑於這種先前技術之問題點而發明者,其課 題在於提供一種可充分應付半導體元件之電極數的增加、 不會引起氣泡之混入、可靠性高以及可穏定地進行製作及 半導體封裝組立之導線架基板及其製造方法以及相關的半 導體裝置。 [解決課題之手段] 本發明之第1形態是一種導線架基板,其具備:具有 ® 第1面和第2面的金屬板;形成於該第1面之半導體元件 裝載部、半導體元件電極連接端子以及第1外框部;外部 連接端子,係形成於該第2面,並電性連接於該半導體元 件電極連接端子;形成於該第2面之第2外框部;以及形 成於該第1外框部和該第2外框部之間隙的樹脂層;該導 線架基板的特徵爲:於該樹脂層所埋設之該外部連接端子 的側面,至該第1面的側底部形成至少1處的突出部。 本發明之第2形態是一種導線架基板的製造方法,其 201021186 特徵爲:於金屬板的第1面形成半導體元件裝載部、半導 體元件電極連接端子、以及外框部;於該金屬板的第2面 形成光阻劑圖案,其用以分別形成和該半導體元件電極連 接端子連接的外部連接端子及外框部;用以形成該外部連 接端子之該光阻劑圖案係形成爲具有1處以上之突起狀的 圖案;於該第2面之金屬板所露出的金屬板露出部,利用 鈾刻形成未貫穿的孔部;對該孔部,從該外部連接端子朝 向突出部方向塗布液狀預模製樹脂後,加熱使其變硬,藉 β 此形成樹脂層;藉由蝕刻該第1面,而形成該半導體元件 裝載部、和該外部連接端子電性連接的該半導體元件電極 連接端子、以及外框部。 本發明之第3形態是一種半導體裝置,係導線架基 板,其具備:具有第1面和第2面的金屬板;形成於該第 1面之半導體元件裝載部、半導體元件電極連接端子以及 第1外框部;外部連接端子,係形成於該第2面,並電性 連接於該半導體元件電極連接端子;形成於該第2面之第 胃 2外框部;以及形成於該第1外框部和該第2外框部之間 隙的樹脂層;該半導體裝置之特徵爲:該導線架基板係於 該樹脂層所埋設之該外部連接端子的側面,至該第1面的 側底部形成至少1處的突出部;於該導線架基板,裝載半 導體元件,而且以打線接合方式構成該導線架基板和該半 導體元件之電性連接。 [發明之效果] 依據本發明,可將用以和印刷配線基板連接的外部連 201021186 接端子以陣列狀配置於導線架基板的整個背面,而可應付 半導體元件的多端子化。又,是以導線架爲基底的基板, 因爲未使用電鍍配線,所以可確保對熱應力的可靠性。 另一方面,在製作基板時,不會發生配線之折斷或彎 曲以及混入氣泡的不良,在是半導體封裝組立步驟的打線 接合時,因爲預模製樹脂層係以和外部連接端子表面同一 面的方式存在,故打線連接端子的下部可穏定地連接。 【實施方式】 © 第1A圖〜第1F圖表示本導線架基板之製程的示意剖 面。 於導線架所使用之金屬板1的雙面上形成光阻劑的 圖案2(第1B圖)。在第1人圖~第1F圖,於上面形成半導 體元件裝載部8、和半導體元件電極連接之連接端子9、配 線10以及外框部12的圖案,於金屬板1的下面形成外部 連接端子11及外框部的圖案。 而,本發明之實施形態如第2A圖所示,除了是所要 ® 之形狀的外部連接端子形成圖案(在此情況爲圓形)以外, 還預先適當地作入1處以上的突起部13。 以此光阻劑所製作之突起部13的圖案,設計成在後 面的蝕刻第2金屬面不會殘留。 突起部13的圖案一般可設定成寬度30μϊη以下、長 度1 ΟΟμιη以下。但是,受到形成孔部3的蝕刻條件及蝕刻 量的影響,因爲蝕刻後所殘留之金屬部分的大小和形狀會 變化,所以需要考慮此變化而預先使光阻劑圖案之突起部 201021186 13的尺寸變成最佳値。 作爲金屬板,雖然只要是具有作爲導線架的蝕刻加工 性、機械強度、導熱性以及膨脹係數等,則可使用任何材 料,但是常使用由42合金所代表之鐵一鎳系合金、或爲了 提高機械強度而添加各種金屬元素的銅系合金等。 使用氯化亞鐵液等將金屬板溶解的蝕刻液從下面蝕 刻,而形成孔部3(第1C圖)。因爲金屬板之殘留部最後成 爲配線,孔部3的深度殘留約10 μιη〜5 0 μιη厚較佳,使可在 β 從第2次之上面側的蝕刻時形成微細配線。 於外部連接端子形成於至少1處以上如第2Β圖、第 2C圖所示的突出部14。 第2C圖表示第2Β圖之Α2 — Α2間的剖面,突出部 14形成爲比第2面更低。第2Β圖表示突出部14形成1處 之狀態,第2D圖表示形成2處之狀態。
然後,使被蝕刻加工之金靥板的上下面顛倒,並在箭 號D5方向將液狀預模製樹脂5塗布於金屬板的上面(第1D ❹ W 圖)。 塗布是應用印刷技術,在生產性或品質上一般較佳。 作爲印刷方法,雖然只要可適當地厚塗布,任何方向都可, 但是一般以網印較佳。藉由印刷的方向在第2B圖之箭號 D2、第2D圖之箭號D3、D4的方向進行,而可使在預模製 樹脂的流動具有方向性,並防止氣泡的捲入。在塗布後將 預模製樹脂加熱,使其變硬(第1E圖)。 在印刷塗布後,因爲第2面均句地形成約數μηι的樹 201021186 脂層6(未圖示),所以需要除去樹脂層,使第2面露出。作 爲除去方法’可從乾飩刻、機械硏磨以及化學硏磨等作選 擇。 進而’蝕刻反面,形成半導體元件裝載部8、半導體 元件電極連接端子9以及配線1〇,而得到導線架基板7 (第 1F圖)》在第3圖表示外部連接端子側的上視圖。可陣列狀 地配置外部連接端子,而可應付半導體元件的多接腳化。 第4A圖表示已裝載半導體元件15並進行了打線接合 W 的剖面圖。利用晶元連接材料17貼黏半導體元件15,再 以金線16和半導體元件電極連接端子9連接。因應於需 要,而對半導體元件電極連接端子適當地施加鍍鎳-金、 鍍錫、鍍銀、或鍍鎳-鈀_金等任一種。 此外,在進行打線接合時,將本導線架基板放置於熱 塊上,並一面加熱一面進行接合,而預模製樹脂以同一面 位於半導體元件電極連接端子9的下部,又,因爲難產生 中空構造,所以不會產生接合不良之組立。 鲁 最後,利用傳送模或澆注劑(potting)將半導體元件側 密封,再以鑽石刀等使外框部分離,而作成小片(第48圖)。 若是BAG型式,將焊劑球裝載於外部連接端子,而 得到使用導線架基板的半導體封裝。 [實施例] 作爲應用本發明之實施形態的一例,使用第1A圖~ 第1F圖說明BGA (Ball Grid Aray ;球格陣列)型式的導線 架基板。 -10- 201021186 所製造之BGA的封裝尺寸是10 mm正方,並於封裝 下面具有168支接腳之陣列形的外部連接端子。 首先,如第1A圖所示,準備寬度爲150mm、厚度爲 200μιη之長條帶狀的銅合金製金屬板 1(古河電工製, EFTEC64T)。 接著,如第1Β圖所示,於金屬板1的雙面,以輥塗 布器將光阻劑(東京應化(股份公司)製,OFPR4000)塗布成 厚度5μιη後,以90°C進行前烘烤。 Φ 接著,經由具有所要之圖案的光罩從雙面進行圖案曝 光,然後,以1%碳酸鈉水溶液進行顯像處理後,進行沖水 及後烘烤,而得到第1B圖所示之光阻劑圖案2。 作爲光阻劑圖案,於第1面,形成用以形成半導體元 件裝載部8、半導體元件電極連接端子9、配線10以及外 框部12的圖案,於第2面形成用以形成具有突起部13 (第 2A圖)的外部連接端子11及外框部12的圖案。在此,突 起部13的形狀採用和外部連接端子接觸之寬度爲30 μπι、 ® 長度爲80μπι之等腰三角形的形狀》 然後,以保護片覆蓋並保護金屬板1的第1面側後(未 圖示),使用氯化亞鐵溶液自金屬板的第2面進行第1次的 蝕刻處理,使從第2面側的光阻劑圖案所露出的金屬板部 位的厚度薄至30μιη(第1C圖)。 又,可於外部連接端子側面形成長度約40μιη的突出 部14。所使用之氯化亞鐵溶液的比重設爲1.38、液溫爲 5 0°C · -11- 201021186 接著,對在第1次蝕刻已形成孔部的第2面,使用液 狀的熱硬化樹脂(信越化學(股份公司)製,SMC — 376KF1), 進行網印塗布。印刷方向從無突出部14處向突出物的方向 進行(第1D圖)》 進而,以180°C進行硬化3小時,而形成預模製層13。 熱硬化樹脂的埋入性良好,未觀察到包含有氣泡的不良。 因爲在外部連接端子11、外框部12之未被蝕刻的面 上殘留約Ιμιη的熱硬化樹脂層,所以在60°C之過錳酸鉀的 ® 鹼性水溶液(40g/L過錳酸鉀+20g/L氫氧化鈉)進行處理約3 分鐘而除去。 接著,在除去第1面側的保護片後,利用氯化亞鐵溶 液自金屬板的第1面側施加第2次的蝕刻處理,溶解並除 去從光阻劑圖案所露出的金屬板部位,而形成半導體元件 裝載部8、半導體元件電極連接端子9、配線10以及外框 部12(第1E圖)。外部連接端子11從半導體元件電極連接 端子9延伸。 m w 此外,雖未圖示,爲了避免對下面側進行不要的蝕 刻,在第2次的蝕刻處理時預先將保護片等貼黏於第2面 側較佳。 接著,剝離第1面的光阻劑圖案2,而得到所要之導 線架型BGA基板7(第1F圖)。 然後,對在光阻劑剝離後所露出的金靥面,施加鍍電 解鎳—金。 鎳之厚度是5μιη,金之厚度是0·1μιη(未圖示)。 -12- 201021186 接著,使用晶元連接材料17將半導體元件15裝載於 本發明之導線架型BGA基板7,以150°C在1小時使晶元 連接材料變硬。進而,使用直徑30μιη的金線16,將半導 體元件的電極和半導體元件電極連接端子9進行打線連接 (第4Α圖)。 打線的加熱溫度以200°C進行,測定半導體元件電極 連接端子側之金線的拉力強度,有9g以上,得到良好的連 接。 ® 然後,如第4B圖所示,將包含有半導體元件電極連 接端子的區域進行傳送模密封,並裁成小片,而得到使用 導線架型BG A基板的半導體封裝。 [工業上的可應用性] 藉由使用本發明之導線架基板的製造方法,可得到降 低製造時的不良或半導體封裝組立時的不良,並提高對熱 應力之可靠性的導線架基板,尤其適用於以導線架型式之 半導體封裝無法應付的多接腳封裝基板。 ❹ W 【圖式簡單說明】 第1A圖係表示本發明之實施形態的導線架基板之製 造方法之一例的剖面圖。 第1B圖表示本發明之實施形態的導線架基板之製造 方法的一例,是在第1A圖之下一步驟的剖面圖。 第1C圖表示本發明之實施形態的導線架基板之製造 方法的一例,是在第1B圖之下一步驟的剖面圖。 第1D圖表示本發明之實施形態的導線架基板之製造 -13- 201021186 方法的一例,是在第1C圖之下一步驟的剖面圖。 第1E圖表示本發明之實施形態的導線架基板之製造 方法的一例,是在第1D圖之下一步驟的剖面圖。 第1F圖表示本發明之實施形態的導線架基板之製造 方法的一例,是在第1E圖之下一步驟的剖面圖。 第2A圖係表示在本發明之實施形態的導線架基板之 光阻劑圖案的上視圖。 第2B圖係表示在本發明之實施形態的導線架基板之 • 鈾刻後的上視圖。 第2C圖係在第2B圖的A2-A2剖面圖。 第2D圖係本發明之實施形態的其他例之導線架基板 之蝕刻後的上視圖。 第3圖係本發明之實施形態的導線架基板的一例,是 最初之蝕刻後的上視圖。 第4A圖係關於本發明之實施形態的導線架基板的一 例,裝載半導體元件並打線後的剖面圖。 ® 第4B圖係關於本發明之實施形態的導線架基板的一 例,已傳送模密封後的剖面圖。 第5A圖係表示以往之導線架基板的—例的剖面圖。 第5B圖係表示以往之導線架基板之其他例的剖面 圖。 第6A圖係以往之導線架基板的一'例,是外部連接端 子之最初之蝕刻後的上視圖。 第6B圖係以往之導線架基板的一例,是外部連接端 -14- 201021186 子之最初之蝕刻後的剖面圖。 第6C圖係以往之導線架基板的一例,是外部連接端 子之最初之鈾刻後,形成樹脂層後的上視圖。 【元件符號說明】 1 金屬板 2 光阻劑圖案 3 孔部 4 橡皮刮 ® 5液狀預模製樹脂 6 樹脂層 7 導線架基板 8 半導體元件裝載部 9 半導體元件電極連接端子 10配線 11外部連接端子 12外框部 W 1 3光阻劑突起圖案 14突出部 1 5半導體元件 16金線 1 7晶元連接材料 1 8傳送模製樹脂 19氣泡 -15-
Claims (1)
- 201021186 七、申請專利範圍: 1. —種導線架基板,其具備: 具有第1面和第2面的金屬板; 形成於該第1面之半導體元件裝載部、半導體元件 電極連接端子以及第1外框部; 外部連接端子,係形成於該第2面,並電性連接於 該半導體元件電極連接端子; 形成於該第2面之第2外框部;以及 φ 形成於該第1外框部和該第2外框部之間隙的樹脂 層; 該導線架基板的特徵爲: 於該樹脂層所埋設之該外部連接端子的側面,至該 第1面的側底部形成至少1處的突出部。 2. —種導線架基板的製造方法,其特徵爲: 於金屬板的第1面形成半導體元件裝載部、半導體 元件電極連接端子、以及外框部; φ 於該金屬板的第2面形成光阻劑圖案,其用以分別 形成和該半導體元件電極連接端子連接的外部連接端子 及外框部; 用以形成該外部連接端子之該光阻劑圖案係形成爲 具有1處以上之突起狀的圖案; 於該第2面之金屬板所露出的金屬板露出部,利用 蝕刻形成未貫穿的孔部; 對該孔部,從該外部連接端子朝向突出部方向塗布 液狀預模製樹脂後,加熱使其變硬,藉此形成樹脂層; -16- 201021186 藉由蝕刻該第1面,而形成該半導體元件裝載部、 和該外部連接端子電性連接的該半導體元件電極連接端 子、以及外框部。 3.—種半導體裝置,係導線架基板,其具備: 具有第1面和第2面的金屬板; 形成於該第1面之半導體元件裝載部、半導體元件 電極連接端子以及第1外框部; 外部連接端子,係形成於該第2面,並電性連接於 % 該半導體元件電極連接端子: 形成於該第2面之第2外框部;以及 形成於該第1外框部和該第2外框部之間隙的樹脂 層; 該半導體裝置之特徵爲: 該導線架基板係於該樹脂層所埋設之該外部連接端 子的側面,至該第1面的側底部形成至少1處的突出部; 於該導線架基板,裝載半導體元件,而且以打線接 φ 合方式構成該導線架基板和該半導體元件之電性連接。 -17-
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KR101602982B1 (ko) | 2016-03-11 |
US20110163435A1 (en) | 2011-07-07 |
TWI502711B (zh) | 2015-10-01 |
CN102165585B (zh) | 2014-03-26 |
JP5549066B2 (ja) | 2014-07-16 |
CN102165585A (zh) | 2011-08-24 |
WO2010038452A1 (ja) | 2010-04-08 |
KR20110074514A (ko) | 2011-06-30 |
US8558363B2 (en) | 2013-10-15 |
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