TW200943478A - Method for manufacturing SOI substrate and semiconductor device - Google Patents

Method for manufacturing SOI substrate and semiconductor device

Info

Publication number
TW200943478A
TW200943478A TW097141664A TW97141664A TW200943478A TW 200943478 A TW200943478 A TW 200943478A TW 097141664 A TW097141664 A TW 097141664A TW 97141664 A TW97141664 A TW 97141664A TW 200943478 A TW200943478 A TW 200943478A
Authority
TW
Taiwan
Prior art keywords
substrate
soi substrate
single crystal
crystal semiconductor
semiconductor layer
Prior art date
Application number
TW097141664A
Other languages
English (en)
Chinese (zh)
Inventor
Akihisa Shimomura
Junpei Momo
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200943478A publication Critical patent/TW200943478A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW097141664A 2007-11-01 2008-10-29 Method for manufacturing SOI substrate and semiconductor device TW200943478A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01

Publications (1)

Publication Number Publication Date
TW200943478A true TW200943478A (en) 2009-10-16

Family

ID=40588499

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141664A TW200943478A (en) 2007-11-01 2008-10-29 Method for manufacturing SOI substrate and semiconductor device

Country Status (5)

Country Link
US (1) US20090117707A1 (https=)
JP (1) JP2009135448A (https=)
KR (1) KR20090045123A (https=)
CN (1) CN101425456A (https=)
TW (1) TW200943478A (https=)

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TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490354B (zh) * 2011-03-14 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490358B (zh) * 2011-02-25 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI506349B (zh) * 2009-11-30 2015-11-01 Semiconductor Energy Lab 液晶顯示裝置、液晶顯示裝置之驅動方法及包含該液晶顯示裝置之電子裝置
TWI684200B (zh) * 2015-06-02 2020-02-01 日商信越化學工業股份有限公司 具備氧化物單結晶薄膜之複合晶圓之製造方法
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置

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CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
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TWI745813B (zh) 2017-06-27 2021-11-11 日商佳能安內華股份有限公司 電漿處理裝置
KR102257134B1 (ko) 2017-06-27 2021-05-26 캐논 아네르바 가부시키가이샤 플라스마 처리 장치
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CN112292911A (zh) * 2018-06-26 2021-01-29 佳能安内华股份有限公司 等离子体处理装置、等离子体处理方法、程序和存储介质
CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
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CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法
CN116646822B (zh) * 2023-06-29 2025-10-24 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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TWI506349B (zh) * 2009-11-30 2015-11-01 Semiconductor Energy Lab 液晶顯示裝置、液晶顯示裝置之驅動方法及包含該液晶顯示裝置之電子裝置
US10847116B2 (en) 2009-11-30 2020-11-24 Semiconductor Energy Laboratory Co., Ltd. Reducing pixel refresh rate for still images using oxide transistors
US11282477B2 (en) 2009-11-30 2022-03-22 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
US11636825B2 (en) 2009-11-30 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, method for driving the same, and electronic device including the same
TWI453905B (zh) * 2010-06-28 2014-09-21 Toshiba Kk Manufacturing method of semiconductor device
TWI490358B (zh) * 2011-02-25 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI486476B (zh) * 2011-02-28 2015-06-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI490354B (zh) * 2011-03-14 2015-07-01 Hon Hai Prec Ind Co Ltd 殼體及其製造方法
TWI684200B (zh) * 2015-06-02 2020-02-01 日商信越化學工業股份有限公司 具備氧化物單結晶薄膜之複合晶圓之製造方法
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置

Also Published As

Publication number Publication date
US20090117707A1 (en) 2009-05-07
JP2009135448A (ja) 2009-06-18
KR20090045123A (ko) 2009-05-07
CN101425456A (zh) 2009-05-06

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