CN101425456A - Soi衬底的制造方法及半导体装置的制造方法 - Google Patents

Soi衬底的制造方法及半导体装置的制造方法 Download PDF

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Publication number
CN101425456A
CN101425456A CNA2008101747469A CN200810174746A CN101425456A CN 101425456 A CN101425456 A CN 101425456A CN A2008101747469 A CNA2008101747469 A CN A2008101747469A CN 200810174746 A CN200810174746 A CN 200810174746A CN 101425456 A CN101425456 A CN 101425456A
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Prior art keywords
layer
single crystal
substrate
crystal semiconductor
semiconductor layer
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CNA2008101747469A
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English (en)
Chinese (zh)
Inventor
下村明久
桃纯平
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101425456A publication Critical patent/CN101425456A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CNA2008101747469A 2007-11-01 2008-10-27 Soi衬底的制造方法及半导体装置的制造方法 Pending CN101425456A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285180 2007-11-01
JP2007285180 2007-11-01

Publications (1)

Publication Number Publication Date
CN101425456A true CN101425456A (zh) 2009-05-06

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US (1) US20090117707A1 (https=)
JP (1) JP2009135448A (https=)
KR (1) KR20090045123A (https=)
CN (1) CN101425456A (https=)
TW (1) TW200943478A (https=)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104428886A (zh) * 2012-07-03 2015-03-18 法国原子能及替代能源委员会 硅＜100＞的自支撑层的分离
CN104681117A (zh) * 2013-11-29 2015-06-03 佳能株式会社 结构体和包含结构体的X射线Talbot干涉计
CN106057737A (zh) * 2015-04-15 2016-10-26 株式会社迪思科 薄板的分离方法
CN107924827A (zh) * 2015-06-29 2018-04-17 Ipg光子公司 用于非晶硅衬底的均匀结晶的基于光纤激光器的系统
CN109001179A (zh) * 2018-08-07 2018-12-14 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
CN109196622A (zh) * 2016-05-31 2019-01-11 欧洲激光系统和解决方案公司 深结电子器件及其制造方法
CN112292911A (zh) * 2018-06-26 2021-01-29 佳能安内华股份有限公司 等离子体处理装置、等离子体处理方法、程序和存储介质
US11569070B2 (en) 2017-06-27 2023-01-31 Canon Anelva Corporation Plasma processing apparatus
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
US11626270B2 (en) 2017-06-27 2023-04-11 Canon Anelva Corporation Plasma processing apparatus
CN116646822A (zh) * 2023-06-29 2023-08-25 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件
US11961710B2 (en) 2017-06-27 2024-04-16 Canon Anelva Corporation Plasma processing apparatus

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2009687B1 (en) * 2007-06-29 2016-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device
US20090004764A1 (en) * 2007-06-29 2009-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate and method for manufacturing semiconductor device
JP2010114431A (ja) 2008-10-10 2010-05-20 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法
SG163481A1 (en) 2009-01-21 2010-08-30 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
US8436362B2 (en) * 2009-08-24 2013-05-07 Micron Technology, Inc. Solid state lighting devices with selected thermal expansion and/or surface characteristics, and associated methods
KR102369012B1 (ko) * 2009-09-16 2022-02-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
CN102648490B (zh) 2009-11-30 2016-08-17 株式会社半导体能源研究所 液晶显示设备、用于驱动该液晶显示设备的方法、以及包括该液晶显示设备的电子设备
KR101833198B1 (ko) * 2009-12-04 2018-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이를 포함하는 전자 기기
US9669613B2 (en) 2010-12-07 2017-06-06 Ipg Photonics Corporation Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated
WO2011071889A1 (en) 2009-12-07 2011-06-16 J.P. Sercel Associates, Inc. Laser lift off systems and methods
JP5926887B2 (ja) 2010-02-03 2016-05-25 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
JP5542543B2 (ja) * 2010-06-28 2014-07-09 株式会社東芝 半導体装置の製造方法
KR101762823B1 (ko) * 2010-10-29 2017-07-31 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 제조 방법
US8486791B2 (en) 2011-01-19 2013-07-16 Macronix International Co., Ltd. Mufti-layer single crystal 3D stackable memory
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
CN102650051A (zh) * 2011-02-25 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102650039A (zh) * 2011-02-28 2012-08-29 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
CN102677007A (zh) * 2011-03-14 2012-09-19 鸿富锦精密工业（深圳）有限公司 铝或铝合金的壳体及其制造方法
US9406551B2 (en) * 2012-09-27 2016-08-02 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate
US9586291B2 (en) 2012-11-28 2017-03-07 Globalfoundries Inc Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
US9214351B2 (en) 2013-03-12 2015-12-15 Macronix International Co., Ltd. Memory architecture of thin film 3D array
TWI610374B (zh) 2013-08-01 2018-01-01 格芯公司 用於將搬運器晶圓接合至元件晶圓以及能以中段波長紅外光雷射燒蝕釋出之接著劑
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US10439057B2 (en) 2014-09-09 2019-10-08 Intel Corporation Multi-gate high electron mobility transistors and methods of fabrication
JP6396854B2 (ja) * 2015-06-02 2018-09-26 信越化学工業株式会社 酸化物単結晶薄膜を備えた複合ウェーハの製造方法
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
US10529564B2 (en) * 2015-08-07 2020-01-07 North Carolina State University Synthesis and processing of novel phase of boron nitride (Q-BN)
US10240251B2 (en) 2016-06-28 2019-03-26 North Carolina State University Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications
CN108109592B (zh) 2016-11-25 2022-01-25 株式会社半导体能源研究所 显示装置及其工作方法
US10679886B2 (en) * 2017-11-17 2020-06-09 Jsr Corporation Workpiece treating method, semiconductor device, process for manufacturing the same, and temporary fixing composition for shear peeling
US11426818B2 (en) 2018-08-10 2022-08-30 The Research Foundation for the State University Additive manufacturing processes and additively manufactured products
TWI743539B (zh) * 2019-08-22 2021-10-21 友達光電股份有限公司 背光模組及其適用的顯示裝置
CN111106029B (zh) * 2019-12-31 2023-02-10 深圳市锐骏半导体股份有限公司 一种晶圆快速热处理机台的监控方法
TWI903011B (zh) * 2021-01-15 2025-11-01 日商東京威力科創股份有限公司 基板處理裝置、基板處理方法及基板製造方法
CN115346892A (zh) * 2021-05-14 2022-11-15 日扬科技股份有限公司 固体结构的加工装置及加工方法
WO2024190116A1 (ja) * 2023-03-16 2024-09-19 株式会社ジャパンディスプレイ 半導体装置及びその製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390392A (en) * 1980-09-16 1983-06-28 Texas Instruments Incorporated Method for removal of minute physical damage to silicon wafers by employing laser annealing
CA2256699C (en) * 1996-05-28 2003-02-25 The Trustees Of Columbia University In The City Of New York Crystallization processing of semiconductor film regions on a substrate, and devices made therewith
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
US6322325B1 (en) * 1999-01-15 2001-11-27 Metropolitan Industries, Inc. Processor based pump control systems
US6171965B1 (en) * 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
JP4507395B2 (ja) * 2000-11-30 2010-07-21 セイコーエプソン株式会社 電気光学装置用素子基板の製造方法
KR100424593B1 (ko) * 2001-06-07 2004-03-27 엘지.필립스 엘시디 주식회사 실리콘 결정화방법
US7105048B2 (en) * 2001-11-30 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
JP2003197523A (ja) * 2001-12-26 2003-07-11 Sharp Corp 結晶性半導体膜の製造方法および半導体装置
US7192479B2 (en) * 2002-04-17 2007-03-20 Sharp Laboratories Of America, Inc. Laser annealing mask and method for smoothing an annealed surface
JP2003347208A (ja) * 2002-05-27 2003-12-05 Sumitomo Heavy Ind Ltd アモルファス材料の結晶化方法
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
KR100618184B1 (ko) * 2003-03-31 2006-08-31 비오이 하이디스 테크놀로지 주식회사 결정화 방법
KR100492352B1 (ko) * 2003-06-12 2005-05-30 엘지.필립스 엘시디 주식회사 실리콘 결정화 방법
US7084045B2 (en) * 2003-12-12 2006-08-01 Seminconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100595455B1 (ko) * 2003-12-24 2006-06-30 엘지.필립스 엘시디 주식회사 레이저 마스크 및 이를 이용한 결정화방법
JP4759919B2 (ja) * 2004-01-16 2011-08-31 セイコーエプソン株式会社 電気光学装置の製造方法
JP5110772B2 (ja) * 2004-02-03 2012-12-26 株式会社半導体エネルギー研究所 半導体薄膜層を有する基板の製造方法
KR101016510B1 (ko) * 2004-06-30 2011-02-24 엘지디스플레이 주식회사 레이저 결정화방법 및 결정화 장치
US7645337B2 (en) * 2004-11-18 2010-01-12 The Trustees Of Columbia University In The City Of New York Systems and methods for creating crystallographic-orientation controlled poly-silicon films
JP5276792B2 (ja) * 2006-03-03 2013-08-28 株式会社半導体エネルギー研究所 半導体装置の作製方法

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CN104428886A (zh) * 2012-07-03 2015-03-18 法国原子能及替代能源委员会 硅＜100＞的自支撑层的分离
CN104681117A (zh) * 2013-11-29 2015-06-03 佳能株式会社 结构体和包含结构体的X射线Talbot干涉计
US9506878B2 (en) 2013-11-29 2016-11-29 Canon Kabushiki Kaisha Structural body and X-ray talbot interferometer including the structural body
CN106057737B (zh) * 2015-04-15 2021-06-29 株式会社迪思科 薄板的分离方法
CN106057737A (zh) * 2015-04-15 2016-10-26 株式会社迪思科 薄板的分离方法
CN107924827A (zh) * 2015-06-29 2018-04-17 Ipg光子公司 用于非晶硅衬底的均匀结晶的基于光纤激光器的系统
CN107924827B (zh) * 2015-06-29 2022-07-01 Ipg光子公司 用于非晶硅衬底的均匀结晶的基于光纤激光器的系统
CN109196622B (zh) * 2016-05-31 2024-04-02 欧洲激光系统和解决方案公司 深结电子器件及其制造方法
CN109196622A (zh) * 2016-05-31 2019-01-11 欧洲激光系统和解决方案公司 深结电子器件及其制造方法
US11600469B2 (en) 2017-06-27 2023-03-07 Canon Anelva Corporation Plasma processing apparatus
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CN109001179B (zh) * 2018-08-07 2020-10-27 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
CN109001179A (zh) * 2018-08-07 2018-12-14 东南大学 尖端间距可调节的金属V型光栅Fano共振结构
CN116646822A (zh) * 2023-06-29 2023-08-25 安徽格恩半导体有限公司 一种具有费米面拓扑层的半导体激光元件

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US20090117707A1 (en) 2009-05-07
JP2009135448A (ja) 2009-06-18
TW200943478A (en) 2009-10-16
KR20090045123A (ko) 2009-05-07

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Application publication date: 20090506