TW200942609A - Compositions for removal of metal hard mask etching residues from a semiconductor substrate - Google Patents

Compositions for removal of metal hard mask etching residues from a semiconductor substrate

Info

Publication number
TW200942609A
TW200942609A TW097137570A TW97137570A TW200942609A TW 200942609 A TW200942609 A TW 200942609A TW 097137570 A TW097137570 A TW 097137570A TW 97137570 A TW97137570 A TW 97137570A TW 200942609 A TW200942609 A TW 200942609A
Authority
TW
Taiwan
Prior art keywords
compositions
hard mask
metal
etching residues
removal
Prior art date
Application number
TW097137570A
Other languages
English (en)
Inventor
Hua Cui
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Publication of TW200942609A publication Critical patent/TW200942609A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW097137570A 2007-11-16 2008-09-30 Compositions for removal of metal hard mask etching residues from a semiconductor substrate TW200942609A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US99642907P 2007-11-16 2007-11-16

Publications (1)

Publication Number Publication Date
TW200942609A true TW200942609A (en) 2009-10-16

Family

ID=40638994

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137570A TW200942609A (en) 2007-11-16 2008-09-30 Compositions for removal of metal hard mask etching residues from a semiconductor substrate

Country Status (7)

Country Link
US (1) US20090131295A1 (zh)
EP (1) EP2219882A4 (zh)
JP (1) JP2011503899A (zh)
KR (1) KR20100082012A (zh)
CN (1) CN101883688A (zh)
TW (1) TW200942609A (zh)
WO (1) WO2009064336A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553736B (zh) * 2010-04-06 2016-10-11 聯華電子股份有限公司 一種填充金屬的方法

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
KR20100044777A (ko) * 2007-07-26 2010-04-30 미츠비시 가스 가가쿠 가부시키가이샤 세정 방식용 조성물 및 반도체소자 또는 표시소자의 제조 방법
JP5428859B2 (ja) * 2007-08-08 2014-02-26 荒川化学工業株式会社 鉛フリーハンダフラックス除去用洗浄剤組成物、および鉛フリーハンダフラックスの除去方法
US7825079B2 (en) * 2008-05-12 2010-11-02 Ekc Technology, Inc. Cleaning composition comprising a chelant and quaternary ammonium hydroxide mixture
JP2010226089A (ja) * 2009-01-14 2010-10-07 Rohm & Haas Electronic Materials Llc 半導体ウェハをクリーニングする方法
JP2010222552A (ja) * 2009-02-24 2010-10-07 Sumitomo Chemical Co Ltd 洗浄用組成物及びそれを用いる液晶性ポリエステル製造装置の洗浄方法
EP2474862B1 (en) * 2009-09-02 2015-02-25 Wako Pure Chemical Industries, Ltd. Composition for removing a resist on a semiconductor substrate and method for removing resist using the composition
WO2011109078A2 (en) * 2010-03-05 2011-09-09 Lam Research Corporation Cleaning solution for sidewall polymer of damascene processes
US20120090648A1 (en) * 2010-10-15 2012-04-19 United Microelectronics Corp. Cleaning method for semiconductor wafer and cleaning device for semiconductor wafer
KR101766210B1 (ko) 2010-12-10 2017-08-08 동우 화인켐 주식회사 오프셋 인쇄용 요판 세정액 조성물
US8449681B2 (en) * 2010-12-16 2013-05-28 Intermolecular, Inc. Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
US20140318584A1 (en) 2011-01-13 2014-10-30 Advanced Technology Materials, Inc. Formulations for the removal of particles generated by cerium-containing solutions
CN102420173B (zh) * 2011-06-07 2015-04-08 上海华力微电子有限公司 一种提高铜互连可靠性的表面处理方法
CN102420177A (zh) * 2011-06-15 2012-04-18 上海华力微电子有限公司 一种超厚顶层金属的双大马士革工艺制作方法
US20140134778A1 (en) * 2011-08-09 2014-05-15 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
CN103050374B (zh) * 2011-10-17 2015-11-25 中芯国际集成电路制造(北京)有限公司 蚀刻后的处理方法
KR101973077B1 (ko) * 2012-01-18 2019-04-29 삼성디스플레이 주식회사 트렌치 형성 방법, 금속 배선 형성 방법, 및 박막 트랜지스터 표시판의 제조 방법
SG11201405737VA (en) * 2012-03-18 2014-10-30 Entegris Inc Post-cmp formulation having improved barrier layer compatibility and cleaning performance
KR101898316B1 (ko) * 2012-05-02 2018-09-13 램 리써치 코포레이션 금속 하드마스크 올 인 원 통합된 에칭
CN103509661A (zh) * 2012-06-29 2014-01-15 林清华 一种用于半导体器件封装的清洗剂
US8853076B2 (en) 2012-09-10 2014-10-07 International Business Machines Corporation Self-aligned contacts
KR20140043949A (ko) * 2012-09-19 2014-04-14 삼성전자주식회사 반도체 소자의 제조 방법
US9102901B2 (en) * 2012-12-20 2015-08-11 Rohm And Haas Electronic Materials Llc Methods and compositions for removal of metal hardmasks
CN104183540B (zh) * 2013-05-21 2019-12-31 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
US8853095B1 (en) * 2013-05-30 2014-10-07 International Business Machines Corporation Hybrid hard mask for damascene and dual damascene
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
US20150104938A1 (en) * 2013-10-16 2015-04-16 United Microelectronics Corporation Method for forming damascene opening and applications thereof
US9771550B2 (en) 2013-12-11 2017-09-26 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
KR102115548B1 (ko) * 2013-12-16 2020-05-26 삼성전자주식회사 유기물 세정 조성물 및 이를 이용하는 반도체 장치의 제조 방법
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
CN116286222A (zh) * 2014-05-13 2023-06-23 巴斯夫欧洲公司 Tin拉回和清洁组合物
US9222018B1 (en) 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
CN105529284A (zh) * 2014-09-29 2016-04-27 盛美半导体设备（上海）有限公司 一种抛光及清洗晶圆的半导体设备及方法
KR102360224B1 (ko) * 2015-02-16 2022-03-14 삼성디스플레이 주식회사 세정용 조성물
US10332784B2 (en) 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
TWI647337B (zh) * 2015-03-31 2019-01-11 美商慧盛材料美國責任有限公司 清潔配方
US9976111B2 (en) 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal
CN106298441B (zh) * 2015-05-18 2020-03-27 盛美半导体设备(上海)股份有限公司 半导体工艺中去除残余物质的方法
US9679850B2 (en) * 2015-10-30 2017-06-13 Taiwan Semiconductor Manufacturing Company Ltd. Method of fabricating semiconductor structure
US9953843B2 (en) 2016-02-05 2018-04-24 Lam Research Corporation Chamber for patterning non-volatile metals
TWI721125B (zh) 2016-03-11 2021-03-11 美商因普利亞公司 預圖案化微影模版、基於使用該模版的輻射圖案化之方法及形成該模版之方法
KR101966808B1 (ko) 2016-09-30 2019-04-08 세메스 주식회사 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치
US10483108B2 (en) 2017-04-28 2019-11-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacture
US10312106B2 (en) * 2017-07-31 2019-06-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
JP7383614B2 (ja) 2017-12-08 2023-11-20 ビーエーエスエフ ソシエタス・ヨーロピア 低ｋ値の材料、銅、および／またはコバルトの層の存在下で、アルミニウム化合物を含む層を選択的にエッチングするための組成物および方法
EP3743773B1 (en) 2018-01-25 2022-04-06 Merck Patent GmbH Photoresist remover compositions
US10825720B2 (en) 2018-08-24 2020-11-03 International Business Machines Corporation Single trench damascene interconnect using TiN HMO
US20220220421A1 (en) 2019-05-23 2022-07-14 Basf Se Composition and process for electively etching a hard mask and/or an etch-stop layer in the presence of layers of low-k materials, copper, cobalt and/or tungsten
KR20230005970A (ko) 2020-05-06 2023-01-10 인프리아 코포레이션 중간 고정 단계가 있는 유기금속 광패턴가능 층을 사용한 다중 패터닝

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3236220B2 (ja) * 1995-11-13 2001-12-10 東京応化工業株式会社 レジスト用剥離液組成物
JP4296320B2 (ja) * 1999-06-21 2009-07-15 ナガセケムテックス株式会社 レジスト剥離剤組成物及びその使用方法
US6235693B1 (en) * 1999-07-16 2001-05-22 Ekc Technology, Inc. Lactam compositions for cleaning organic and plasma etched residues for semiconductor devices
JP3410403B2 (ja) * 1999-09-10 2003-05-26 東京応化工業株式会社 ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
US7456140B2 (en) * 2000-07-10 2008-11-25 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductor devices
US6773873B2 (en) * 2002-03-25 2004-08-10 Advanced Technology Materials, Inc. pH buffered compositions useful for cleaning residue from semiconductor substrates
AU2003225178A1 (en) * 2002-04-24 2003-11-10 Ekc Technology, Inc. Oxalic acid as a cleaning product for aluminium, copper and dielectric surfaces
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US6677286B1 (en) * 2002-07-10 2004-01-13 Air Products And Chemicals, Inc. Compositions for removing etching residue and use thereof
JP4443864B2 (ja) * 2002-07-12 2010-03-31 株式会社ルネサステクノロジ レジストまたはエッチング残さ物除去用洗浄液および半導体装置の製造方法
US20040050406A1 (en) * 2002-07-17 2004-03-18 Akshey Sehgal Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical
US7166419B2 (en) * 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
ES2310677T3 (es) * 2002-10-22 2009-01-16 Ekc Technology, Inc. Composiciones acuosas a base de acido fosforico para la limpieza de dispositivos semiconductores.
US7419768B2 (en) * 2002-11-18 2008-09-02 Micron Technology, Inc. Methods of fabricating integrated circuitry
WO2004094581A1 (en) * 2003-04-18 2004-11-04 Ekc Technology, Inc. Aqueous fluoride compositions for cleaning semiconductor devices
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
JP5162131B2 (ja) * 2003-10-28 2013-03-13 サッチェム， インコーポレイテッド 洗浄溶液およびエッチング液、ならびにそれらを用いる方法
JP4776191B2 (ja) * 2004-08-25 2011-09-21 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去組成物、並びにそれを用いた残渣除去方法
US20060255315A1 (en) * 2004-11-19 2006-11-16 Yellowaga Deborah L Selective removal chemistries for semiconductor applications, methods of production and uses thereof
KR101238471B1 (ko) * 2005-02-25 2013-03-04 이케이씨 테크놀로지, 인코포레이티드 구리 및 저 ｋ 유전체 물질을 갖는 기판으로부터 레지스트,에칭 잔류물 및 구리 산화물을 제거하는 방법
EP1701218A3 (en) * 2005-03-11 2008-10-15 Rohm and Haas Electronic Materials LLC Polymer remover
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
KR100734274B1 (ko) * 2005-09-05 2007-07-02 삼성전자주식회사 기판 세정용 조성물을 이용한 게이트 형성 방법
JP2009512194A (ja) * 2005-10-05 2009-03-19 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド ポストエッチング残渣を除去するための酸化性水性洗浄剤
US7367343B2 (en) * 2006-01-23 2008-05-06 Micron Technology, Inc. Method of cleaning a surface of a cobalt-containing material, method of forming an opening to a cobalt-containing material, semiconductor processing method of forming an integrated circuit comprising a copper-containing conductive line, and a cobalt-containing film cleaning solution
US8025811B2 (en) * 2006-03-29 2011-09-27 Intel Corporation Composition for etching a metal hard mask material in semiconductor processing
SG10201610631UA (en) * 2006-12-21 2017-02-27 Entegris Inc Liquid cleaner for the removal of post-etch residues
US8062429B2 (en) * 2007-10-29 2011-11-22 Ekc Technology, Inc. Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI553736B (zh) * 2010-04-06 2016-10-11 聯華電子股份有限公司 一種填充金屬的方法

Also Published As

Publication number Publication date
EP2219882A4 (en) 2011-11-23
US20090131295A1 (en) 2009-05-21
KR20100082012A (ko) 2010-07-15
CN101883688A (zh) 2010-11-10
JP2011503899A (ja) 2011-01-27
WO2009064336A1 (en) 2009-05-22
EP2219882A1 (en) 2010-08-25

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