TW200929395A - Mountable integrated circuit package system with mountable integrated circuit die - Google Patents
Mountable integrated circuit package system with mountable integrated circuit die Download PDFInfo
- Publication number
- TW200929395A TW200929395A TW097141321A TW97141321A TW200929395A TW 200929395 A TW200929395 A TW 200929395A TW 097141321 A TW097141321 A TW 097141321A TW 97141321 A TW97141321 A TW 97141321A TW 200929395 A TW200929395 A TW 200929395A
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- TW
- Taiwan
- Prior art keywords
- integrated circuit
- package
- die
- circuit die
- substrate
- Prior art date
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- H—ELECTRICITY
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Description
200929395 * 六、發明說明·· 相關申請案交互參照 • 本發明含有與 Heap Hoe Kuan、Seng Guan Chow、Linda Pei Ee Chua 和 Dioscoro A. Merilo 同時申請的 “Integrated Circuit Package System with • Interconnect Lock”美國專利申請案相關之標的。該相關 的申請案讓渡給STATS ChipPAC Ltd.,並被編為檔案編號 27-450。 ❹ 本申請案也含有與Seng Guan Chow、Heap Hoe Kuan 和 Linda Pei Ee Chua 同時申請的 “Integrated Circuit Package System with Offset Stacking and Anti-Flash Structure”美國專利申請案相關之標的。該相關的申請案 讓渡給STATS ChipPAC Ltd.,並被編為檔案編號27-492。 本發明復含有與 Seng Guan Chow、Linda Pei Ee Chua 和 Heap Hoe Kuan 同時申請的 “Integrated Circuit Package System with Offset Stacking” 美國專利申請案 ❹ 相關之標的。該相關的申請讓渡給STATS ChipPAC Ltd., 並被編為檔案編號27-493。 【發明所屬之技術領域】 本發明一般係關於積體電路封裝件系統,並且尤關於 密封之積體電路封裝件系統。 【先前技術】 為了將積體電路與其它電路接合,通常設置其於導線 (lead)框架或基材之上。每一個積體電路具有接合墊 3 94509 200929395 (bonding pad),其使用極度纖細的金或鋁線或傳導球(例 ^ 如焊球)個別連接至基材的接觸墊或終端墊。接著藉由個別 • 密封組合件於模製的塑膠或陶瓷本體内而予以封裝,以創 '造積體電路封裝件。 積體電路封裝技術見證了設置在單一電路板或基材上 的積體電路數目的增加。新的封裝設計是例如為封裝積體電 路的實體尺寸和形狀之更小形的形狀因子(f〇rm fact〇r), 並提供大幅提升的整體積體電路密度。 © 然而’積體電路密度持續受到可用於設置個別積體電 路於基材上的“真實值(real estate)”所限制。即便是較 大型的形狀因子系統,例如:個人電腦(pers〇nal computer,PC)、電腦伺服機和儲存伺服機,都需要在同樣 或更小的“真實值”中有更多的積體電路。對於可攜式個 人電子裝置例如:手機、數位照相機、音樂播放器、個人 數位助理(personal digital assistant ; PDA)和適地性裴 ❹置(location-based device)來說特別迫切的這些需要已 進一步驅使對增加的積體電路密度的需要。 這個增加的積體電路密度已導致多晶片封裝件 (multi-chip package)的發展,其中封裝一個以上的積體 電路。每一個封裝件對個別的積體電路以及對使積體電路 電性連接至周圍電路的一層或多層之互速線層提供機械支 撐。 目前的多晶片封裝件,一般亦稱為多晶片模組,典型 地是由印刷電路板(PCB)基材所構成,其中一組分離的積體 94509 4 200929395 。電路組件直接附接於印刷電路板基材之上。已發現這種多 晶片封裝件提升積體電路的密度及微小化、改善訊號傳播 .速度、_整_體電路尺寸和重量、改善性能以及降低 成本--全部都是電腦工業的主要目標。 、多晶片封裝件不論是垂直或水平配置均可呈現問題, 因為在積體電路和積體電路連接件可以測試前,通常必須 要預先組裝封裝件。因此,當設置及連接積體電路在多晶 片模組中時,無法個別測試個別的積體電路和連接件,而 且在組裝到大型電路之前不可能辨識出已知合格的晶粒 (kn〇w~good—die ; _。所習知的多晶片封裝件導致 組裝製程的良率問題。這種無法辨識KGD的製造製程因此 較不可靠並且容易有組裝缺陷。 此外,在典型多晶片封裝件中的垂直堆疊積體電路會 、現那二水平配置的積體電路封裝件之外的問題,進一步 複雜化製造製程。要測試並因此確定個別積體電路的實際 ❹員型更困難。另外’基材和積體電路經常會在組裝或 J:肩間損壞,複雜化製造製程並提高成本。 ^於垂直和水平的多晶#封裝件來說,多晶片封裝件 間、/必須在多個積體電路之間、堆疊封裝積體電路之 或/、組合之間具有可靠的電性和機械附接。舉例來說, 製=柄裝積體1路⑽封㈣可料致污染,例如模 接’。r:或滲漏(mold flash or bleed),因此妨礙可靠的附 件來另、一個例子,對於在密封中具有凹槽的積體電路封裝 說,使用輪廓模製槽(contoured mold Chase)來形成 94509 5 200929395 凹槽會有增加模製溢料的風險、經 *而增加對封裝件結構的損害以及在封裝膠 的凹槽設計特定的模製槽所增加的製造成未為了所需 善之=性=供低製造成本、改善之良率、改 音供應更多功能之 # 板上較少的覆蓋區域(f00tpri ‘ 在I刷電路 〇 找到這些問題的答案是越來越重要。㈣求來看’ 已經對於這些問題的解答研究了很久,但是沾恭 還無法教示或建議任何解答, ^ ' 已長久地困擾著本發明所屬μ 對思二問題的解答 【發明内容】 領域中具有通常知識者。 署接ί發明提供可設置的積體電路封裝方法,其包含.机 封裝件==裝2體上;連接在積體電路晶粒: Ο 形成:連;以及將封裝件封裂膠體 =於封裝件载體和第-内部互連上,並且部分暴 褒件封裝膠體的凹槽内之積體電路晶粒。 、封 本發明的某些具體實施例具有除了上述態樣 ^述態樣的其它態樣。對於本發明所屬技術領域中= 通吊知識者來說,經由閱讀以下的詳細描述並參考隨^ 圖式,這些態樣為顯而易知的。 、、 【實施方式】 以下詳細充分描述的具體實施例將使本發明所屬 領域中具有通常知識者得以製作和使用本發明?要 94509 200929395 •基於本發明的内容能使其它的具體實施例為明顯的,且可 以在不偏離本發明的範疇之下做出系統、製程或機械的改 •'變 ο .. ' 在以下的描述中,會給予許多特定的細節以提供對本 發明的通盤暸解。然而,很明顯地,在沒有這些特定細節 時也可實施本發明。為了避免對本發明造成混滑,不詳、細 揭露一些習知的電路、系統構型和製程步驟。同樣地,顯 示系統的具體實施例的圖式僅只是半概略圖 ❹ (semi-diagrammatic),並沒有依照實際的比例,特別是一 些尺寸為了表達清楚,而在圖式中大幅地誇大顯示。大體 上,本發明可以在任何方位操作。 此外,揭露和敘述的許多具體實施例具有一些共同的 特徵,為了清晰和容易說明、敘述及理解,所有彼此類似 及相同的特徵通常會以相同的元件符號予以敘述。具體^ 施例已經編號為第一具體實施例、第二具體實施例等等以 ❹便於敘述,並未意欲具有其它意義或對本發明提供限制… 為說明的原因,本文所使用的術語“水平 (horizontal)”係定義為平行積體電路的平面或表面之平 面’無淪其方位;術語“垂直(vertical),,係指垂直所定 義的水平之方向。術語諸如:“在…上面(ab〇ve)”、“在^ 下面(below),,、“底部(b〇tt〇m)”、“上方(t〇p)”、‘彻 邊”(如在“侧壁”)、“較高(higher)” 、“較低 則 (lower)’’ 、“上面的(upper)” 、“在…上(〇ver),,以及 在··.下(under)” ,係相對水平平面而定義。術語‘‘在... 94509 7 200929395 之上(on)”係指在元件間有直接接觸。本文所使用之術語 “處理(processing)”係包含材料的沈積、圖案化 (patterning)、曝光、顯影、蝕刻、清潔、模製(m〇lding) 以及/或材料的移除或依照所需要的形成所述結構。本文所 使用之術語“系統(system)’’依照使用術語之上下文意指 且定義為本發明之方法及設備。 現在參照第1圖’其中顯示在本發明的第一具體實施 例中的可设置的積體電路封裝件系統1 0 0的俯視圖。可設 © 置的積體電路封裝件系統100包含例如為具有凹槽1〇4的 環,氧模製化合物(epoxy molding compound)的封裝件封裝 膠體102。積體電路晶粒106在封裝件封裝膠體102的凹 槽104内部分暴露。設置積體電路裝置1〇8係設置在凹槽 104内之積體電路晶粒106上。設置積體電路裝置1〇8可 包含覆晶(flip chip)或單一或多堆疊晶粒的封裝積體電 路。 ◎現在參照第2圖,其中顯示可設置的積體電路封裝件 系統100沿著第1圖的線2—2的剖面圖。剖面圖描述設置 於第一積體電路裝置210上之積體電路晶粒1〇6,而第一 積體電路裝置210設置至例如為層壓基材的封裝件載體 212。具有内部封裝膠體214的第一積體電路裝置21〇可包 含例如:單一或多堆疊晶粒的封裝積體電路裝置。例如為 連接線(bond wire)或帶形(ribbon)連接線的第一内部互 連216連接積體電路晶粒106和封裝件載體212。 積體電路晶粒106包含主動晶粒側(active die side) 94509 200929395 ⑽和相對於线錄侧218的社動晶粒側(聲act-die side)219 ,以及在主動晶粒側 218 上的電性接觸 22〇 。 積體電路晶粒106設置在第一積體電路裝置21〇上而 體電路晶粒1〇6的非主動晶粒侧219面朝例如為環氧 化合物的内部封裝膠體214。第一内部互連216電性連接 主動晶粒側218至封裝件載體212。 Ο Ο 封裝件封裝膠體102覆蓋封裝件载體212、第一積體 電路裝置21〇、第一内部互連216、並且部分暴露於封裝件 封裝膠體102的凹槽104内之積體電路晶粒1〇6的電性接 觸220。設置積體電路裝置108設置在凹槽1〇4内之電性 接觸220上。較佳地’.設置積體電路裝置1〇8包含例如為 焊料凸塊(solder bump)的設置互連222,設置互連222係 設置於電性接觸220之上。視需要地,可以提供底部填充 劑224以德、封設置互連222和電性接觸22〇。 業已發現本發明提供低外形的可設置的積體電路封裝 件系統,其經由部分暴露在封裝件封裝膠體的凹槽内具有 電性接觸的積體電路晶粒來設置積體電路裝置,而降少整 體封裝件高度。本發明的可設置的積體電路封裝件系統藉 由消除對額外的設置基材(設置積體電路裝置典型設置於 其上)之需要而又減少製造這些層疊封裝 (package-on-package)的處理和整體成本。 現在參照第3圖’其中顯示在本發明的第二具體實施 例中,由第1圖的俯視圖所例示的可設置的積體電路封裝 件系統300的剖面圖。剖面圖描述設置於第一積體電路裝 94509 200929395 » 置310上之積體電路晶粒3〇6,而 :置到例如為層_的封蝴體312 Π = ^ .覆日日日日粒。例如為連接線或帶形連 體312之間連接。積體電路晶粒306和封裝件载 第内4互連316也可在第一積體雷政 裝置叫封裝侧312之間連接也了在第積體電路 曰路晶粒讓包含主動晶粒侧318和相對於主動 〇 Γ卜的雷叫的非主動晶粒侧319,以及在主動晶粒侧318 ,上的電性接觸320。以例如為覆膜線黏著劑 =30= ^牆㈤Ve)的第一黏著劑326 ^ ^ ❹ 第—積體電路裝置.的第-主動側328上, 而=紙日日粒跡的非主動晶粒侧319面對第一主動側 内。P互連316連接主動晶粒側318和封裝 =並且也電性連接第-主動侧328和封裝件載體二 、第一黏著劑326係顯示為未覆蓋在第-主動側328之 上的第一内部互連316,但是瞭解到第一黏著 可 覆蓋包含第一内部互連別的第-主動侧328。 封裝件封裝膠體302覆蓋封裝件載體312、第一積體 電路裝置310、第-内部互連316,並且部分暴露在封裝件 封裝膠體302的凹槽304内之積體電路晶粒3〇6的電性接 觸320。設置積體電路裝置308,例如:覆晶或單一或多堆 疊晶粒的封裝積體電路,係設置在凹槽3〇4内之積體電路 晶粒306上。較佳地’設置積體電路裝置308包含例如為 焊料凸塊的設置互連322,設置互連322係設置於電性接 94509 10 200929395 觸320之上。視需要地,.可以提供底部填充劑324以密封 設置互連322和電性接觸320。 現在參照第4圖,其中顯示在本發明的第3具體實施 例中’由第1圖的俯視圖所例示的可設置的積體電路封裝 件系統400的剖面圖。剖面圖描述設置於第一積體電路裝 置410上之積體電路晶粒406,雨第一積體電路裝置410 設置到例如為層壓基材的封裝件載體412。具有内部封裝 膠體414的第一積體電路裝置可包含例如設置到諸如 © 為層麼基材的第一基材430之封裝積體電路。例如為連接 線或帶形連接線的第一内部互連416在積體電路晶粒406 和封裝件載體412之間連接。第一内部互連416也可在第 一積體電路裝置410和封裝件载體4i2之間連接。 積體電路晶粒406包含主動晶粒侧418和相對於主動 晶粒侧418的非主動晶粒侧419,以及在主動晶粒侧418 之上的電性接觸420。以例如為晶粒附接黏著劑 ❹(dle attach adhesive)的第一黏著劑426設置積體電路晶 粒彻於第一積體電路裳置41〇的第-基材430上,而積 體電路曰曰粒406的非主動晶粒側419面對第一基材㈣。 部互連416辅主動晶粒側418和封裝件载體412, 祕贫電性連接第一基材430和封裝件載體412。視需要 =第—内部互連416也可在主動晶粒側4 一臭 430之間連接。 々乐基材 封裝件封裝膠體402覆蓋封震件載 、 電路裝置41〇十㈣料416,並且部錄露在封^ 94509 11 200929395 封裝膠體402的凹槽404内之積體電路晶粒406的電性接 觸420。設置積體電路裝置408,例如:覆晶或單一或多堆 • 疊晶粒的封裴積體電路,係設置在凹槽404内之電性接觸 420上。較佳地’設置積體電路褒置4〇8包含例如為焊料 凸塊的設置互連422,設置互連422設置於電性接觸420 之上。視需要地’可以提供底部填充劑424以密封設置互 連422和電性接觸420。 現在參照第5圖’其中顯示在本發明的第4具體實施 © 例中’由第1圖的俯視圖所例示的可設置的積體電路封裝 件系統500的剖面圖。剖面圖描述設置於第一積體電路裝 置510上之積體電路晶粒5〇6,而第一積體電路裳置510 設置到例如為層壓基材的封裝件載體512。具有内部封裝 膠體514的第一積體電路裝置51〇可包含例如設置到諸如 為層壓基材^第一基材530之封裝積體電路。例如為連接 線或帶形連接線的第一内部互連516在積體電路晶粒5〇6 ❹和封裝件載體512之間連接。第一内部互連516也在第一 積體電路裝置510和封裝件載體512之間連接。 積體電路晶粒506包含主動晶粒侧518和相對於主動 晶粒侧518的非主動晶粒侧519。主動晶粒侧518和非主 動晶粒侧519包含電性接觸520,電性接觸52〇為例如在 再分配層(redistribution layer ; RDL)或具有傳導軌跡 (conductive trace)之直通矽盲孔(thr〇ugh silic〇n via,TSV)中以進一步電性連接。積體電路晶粒5〇6設置於 第一積體電路裝置510的第一基材wo上,而主動晶粒側 94509 12 200929395 w 518面對第基材530。以例如為焊料凸塊的第二内部互連 532汉置積體電路晶粒506,並且第二内部互連532在主動 晶粒側518之上的電性接觸52〇與第一基材53〇的第一基 材側53气之間電性連接。視需要地,可以提供底部填 526以岔封第二内部互連532。第一内部互連516連接非主 動晶粒侧519與封裝件載體512,且也電性連接第—基 侧534與封裝件載體512。 土 ο 封裝件封裝膠體502覆蓋封裝件载體512、第 電路裝置510、第一内部互連516,並且部分暴露在封裝件 封裝膠體502的凹槽5〇4内之非主動晶粒側519的電 :520。設置積體電路裝置_,例如為覆晶或單—或多堆 疊晶粒的封裝積體電路,係設置在凹槽504内之非主動晶 粒侧519的電性接觸卿上。較佳地,設置積體電路= 湖包含例如為焊料凸__ 522,設 ❹ 置在凹槽504内之電性接觸52〇之上。視需要地可= 供底部填充劑524以密f 二而要也了从 ^ ' 封°又置互連522和電性接觸52〇 〇 中,用於製2 6圖’其中顯示在本發明的具體實施例 的藉辦雷女免置的積體電路封裝件系統100的可設置 玫602中,执 〇〇的程圖。方法600包含:在方 積體電路裝c封裝黎體於封裝件载體、第- 帛_互連上’並且部分暴露在封裝件 94509 13 200929395 封裝膠體的凹槽内之積體電路晶粒。 本發明之另一個重要的態樣是其有價值的支持和提供 降低成本、簡化系統和提升性能的歷史趨勢。 八 2發明的這=及其它有價值之態樣因此推動技術狀 態到至少下一個水平。 要現本!明的可設置的積體電路封裝件系 性能和功能性態樣,用於電路系統的 升和降低成本。所得的製程和構型度提 不複雜、高度變化性、準確、靈敏、有成本效盃、 調整已知的組件來實施,以快速、有致,並且可以藉由 用與利用。 、、、有效和經濟地製造、應 儘管本發明係以特定的最 如 據上述描述,眾多替代、修飾式來插述,可瞭解到根 ❹ 域中具有通常知識者而言為顯而燹化對本發明所屬技術領 囊括落入所附之申請專利範圍=見的。據此,其係傾向 修飾及變化。在本文提出的=内的所有這類的替代、 解為說明而非用於限制。 事項或顯示於圖式者係理 【圖式簡單說明】 第1圖是在本發明的第— 體電路封褒件系統的俯視圖;6體實施例中的可設置的積 第2圖是可設置的積體 線2--2的剖面圖; 、件系統沿著第1圖的 第 圖是在本發_第2具料施例中,由第 94509 200929395 - 俯視圖所例示的可設置的積體電路封裝件系統的剖面圖; ‘ 第4圖是在本發明的第3具體實施例中,由第1圖的 ‘俯視圖所例示的可設置的積體電路封裝件系統的剖面圖; 第5圖是在本發明的第4具體實施例中,由第1圖的 俯視圖所例示的可設置的積體電路封裝件系統的剖面圖; 以及 第6圖是在本發明的具體實施例中,用於製造可設置 的積體電路封裝件系統的可設置的積體電路封裝方法的流 ❹ 程圖。 【主要元件符號說明】 100、300、400、500、600 可設置的積體電路封裝件系統 102、302、402、502 封裝件封裝膠體 〇 212、312、412、512 封裝件載體 104、304、404、504 106 、 306 、 406 、 506 108 、 308 、 408 、 508 210 、 310 、 410 、 510 凹槽 積體電路晶粒 設置積體電路裝置 第一積體電路裝置 214、414、514 内部封裝膠體 216、316、416、516 第一内部互連 218、 318、418、518 主動晶粒側 219、 319、419、519 非主動晶粒側 220、 320、420、520 電性接觸 222、322、422、522 設置互連 224、324、424、525、526 底部填充劑 15 94509 200929395 326 ' 426 第一黏著劑 328 430 > 530 第一基材 532 534 第一基材侧 602、604 第一主動側 第二内部互連 、6 0 6方塊 16 94509
Claims (1)
- 200929395 •七、申請專利範圍: 1. 一種可設置的積體電路封裝方法,包括: 設置積體電路晶粒於封裝件載體上; 連接在該積體電路晶粒與該封裝件載體之間的第 一内部互連; 以及 將封裝件封裝膠體形成於該封裝件載體和該第一 内部互連上,並且部分暴露在該封裝件封裝膠體的凹槽 ❹ 内之該積體電路晶粒。 2. 如申請專利範圍第1項之方法,復包括將設置積體電路 裝置設置於該積體電路晶粒上。 3. 如申請專利範圍第1項之方法,其中,設置該積體電路 晶粒包含設置該積體電路晶粒於第一積體電路裝置上。 4. 如申請專利範圍第1項之方法,其中,設置該積體電路 晶粒包含設置該積體電路晶粒於第一積體電路裝置的 第一基材上。 ® 5.如申請專利範圍第1項之方法,其中,設置該積體電路 晶粒包含: 設置該積體電路晶粒於第一積體電路裝置的第一 基材上;以及· 連接在該積體電路晶粒與該第一基材之間的第二 内部互連。 6. —種可設置的積體電路封裝件系統,包括: 積體電路晶粒,設置於封裝件載體上; 17 94509 200929395 β 第一内部互連,連接在該積體電路晶粒與該封裝件 載體之間;以及 ‘ 封裝件封裝膠體,於該封裝件載體、該第一内部互 連上,並且該積體電路晶粒在該封裝件封裝膠體的凹槽 内部分暴露。 7. 如申請專利範圍第6項之積體電路封裝件系統,復包括 設置於該積體電路晶粒上的設置積體電路裝置。 8. 如申請專利範圍第6項之積體電路封裝件系統,其中, ❹ 該積體電路晶粒設置於第一積體電路裝置上。 9. 如申請專利範圍第6項之積體電路封裝件系統,其中, 該積體電路晶粒設置於第一積體電路裝置的第一基材 上。 10. 如申請專利範圍第6項之積體電路封裝件系統,其中: 該積體電路晶粒設置於第一積體電路裝置的第一 基材上;以及 ^ 復包括: 在該積體電路晶粒與該第一基材之間連接的第二 内部互連。 18 94509
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TWI401752B (zh) * | 2009-12-31 | 2013-07-11 | Advanced Semiconductor Eng | 晶片封裝結構之製造方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7985628B2 (en) * | 2007-12-12 | 2011-07-26 | Stats Chippac Ltd. | Integrated circuit package system with interconnect lock |
US8084849B2 (en) * | 2007-12-12 | 2011-12-27 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking |
US7781261B2 (en) * | 2007-12-12 | 2010-08-24 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking and anti-flash structure |
US20090243069A1 (en) * | 2008-03-26 | 2009-10-01 | Zigmund Ramirez Camacho | Integrated circuit package system with redistribution |
US9293385B2 (en) * | 2008-07-30 | 2016-03-22 | Stats Chippac Ltd. | RDL patterning with package on package system |
US8304869B2 (en) * | 2008-08-01 | 2012-11-06 | Stats Chippac Ltd. | Fan-in interposer on lead frame for an integrated circuit package on package system |
US8749040B2 (en) * | 2009-09-21 | 2014-06-10 | Stats Chippac Ltd. | Integrated circuit packaging system with package-on-package and method of manufacture thereof |
US9472427B2 (en) | 2011-03-22 | 2016-10-18 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming leadframe with notched fingers for stacking semiconductor die |
US9349663B2 (en) | 2012-06-29 | 2016-05-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package-on-package structure having polymer-based material for warpage control |
US8778738B1 (en) | 2013-02-19 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Packaged semiconductor devices and packaging devices and methods |
US9953907B2 (en) | 2013-01-29 | 2018-04-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | PoP device |
US8916474B2 (en) | 2013-02-18 | 2014-12-23 | Infineon Technologies Ag | Semiconductor modules and methods of formation thereof |
US9196591B2 (en) | 2014-02-17 | 2015-11-24 | International Business Machines Corporation | Chip with shelf life |
US10490528B2 (en) * | 2015-10-12 | 2019-11-26 | Invensas Corporation | Embedded wire bond wires |
US11424212B2 (en) * | 2019-07-17 | 2022-08-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor package structure and method for manufacturing the same |
US11443997B2 (en) * | 2020-07-20 | 2022-09-13 | Advanced Semiconductor Engineering, Inc. | Semiconductor package and method of manufacturing the same |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5333505A (en) | 1992-01-13 | 1994-08-02 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same |
FR2694840B1 (fr) | 1992-08-13 | 1994-09-09 | Commissariat Energie Atomique | Module multi-puces à trois dimensions. |
US6727579B1 (en) | 1994-11-16 | 2004-04-27 | Formfactor, Inc. | Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures |
US5866953A (en) | 1996-05-24 | 1999-02-02 | Micron Technology, Inc. | Packaged die on PCB with heat sink encapsulant |
US6117705A (en) | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US5950070A (en) * | 1997-05-15 | 1999-09-07 | Kulicke & Soffa Investments | Method of forming a chip scale package, and a tool used in forming the chip scale package |
JP2000208698A (ja) | 1999-01-18 | 2000-07-28 | Toshiba Corp | 半導体装置 |
US6451624B1 (en) | 1998-06-05 | 2002-09-17 | Micron Technology, Inc. | Stackable semiconductor package having conductive layer and insulating layers and method of fabrication |
JP2000228468A (ja) | 1999-02-05 | 2000-08-15 | Mitsubishi Electric Corp | 半導体チップ及び半導体装置 |
US6351028B1 (en) | 1999-02-08 | 2002-02-26 | Micron Technology, Inc. | Multiple die stack apparatus employing T-shaped interposer elements |
US6043109A (en) * | 1999-02-09 | 2000-03-28 | United Microelectronics Corp. | Method of fabricating wafer-level package |
US6291884B1 (en) * | 1999-11-09 | 2001-09-18 | Amkor Technology, Inc. | Chip-size semiconductor packages |
JP2001141411A (ja) * | 1999-11-12 | 2001-05-25 | Sony Corp | 指紋認識用半導体装置 |
JP2001203318A (ja) | 1999-12-17 | 2001-07-27 | Texas Instr Inc <Ti> | 複数のフリップチップを備えた半導体アセンブリ |
US7026710B2 (en) * | 2000-01-21 | 2006-04-11 | Texas Instruments Incorporated | Molded package for micromechanical devices and method of fabrication |
US6401545B1 (en) | 2000-01-25 | 2002-06-11 | Motorola, Inc. | Micro electro-mechanical system sensor with selective encapsulation and method therefor |
US6492726B1 (en) | 2000-09-22 | 2002-12-10 | Chartered Semiconductor Manufacturing Ltd. | Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnection |
US6340846B1 (en) * | 2000-12-06 | 2002-01-22 | Amkor Technology, Inc. | Making semiconductor packages with stacked dies and reinforced wire bonds |
KR100411811B1 (ko) * | 2001-04-02 | 2003-12-24 | 앰코 테크놀로지 코리아 주식회사 | 반도체패키지 |
JP4413452B2 (ja) | 2001-05-30 | 2010-02-10 | パナソニック株式会社 | 半導体装置およびその製造方法 |
US6611052B2 (en) | 2001-11-16 | 2003-08-26 | Micron Technology, Inc. | Wafer level stackable semiconductor package |
US6653723B2 (en) * | 2002-03-09 | 2003-11-25 | Fujitsu Limited | System for providing an open-cavity low profile encapsulated semiconductor package |
TW582100B (en) | 2002-05-30 | 2004-04-01 | Fujitsu Ltd | Semiconductor device having a heat spreader exposed from a seal resin |
JP3679786B2 (ja) * | 2002-06-25 | 2005-08-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
SG120879A1 (en) | 2002-08-08 | 2006-04-26 | Micron Technology Inc | Packaged microelectronic components |
US6998721B2 (en) * | 2002-11-08 | 2006-02-14 | Stmicroelectronics, Inc. | Stacking and encapsulation of multiple interconnected integrated circuits |
TWI229909B (en) | 2002-12-06 | 2005-03-21 | Siliconware Precision Industries Co Ltd | Lead frame and semiconductor package using the same |
US7208825B2 (en) | 2003-01-22 | 2007-04-24 | Siliconware Precision Industries Co., Ltd. | Stacked semiconductor packages |
US6861288B2 (en) | 2003-01-23 | 2005-03-01 | St Assembly Test Services, Ltd. | Stacked semiconductor packages and method for the fabrication thereof |
US6987058B2 (en) | 2003-03-18 | 2006-01-17 | Micron Technology, Inc. | Methods for underfilling and encapsulating semiconductor device assemblies with a single dielectric material |
TWI311353B (en) * | 2003-04-18 | 2009-06-21 | Advanced Semiconductor Eng | Stacked chip package structure |
KR100604821B1 (ko) * | 2003-06-30 | 2006-07-26 | 삼성전자주식회사 | 적층형 볼 그리드 어레이 패키지 및 그 제조방법 |
KR100574947B1 (ko) * | 2003-08-20 | 2006-05-02 | 삼성전자주식회사 | Bga 패키지, 그 제조방법 및 bga 패키지 적층 구조 |
KR100546374B1 (ko) * | 2003-08-28 | 2006-01-26 | 삼성전자주식회사 | 센터 패드를 갖는 적층형 반도체 패키지 및 그 제조방법 |
US7495344B2 (en) | 2004-03-18 | 2009-02-24 | Sanyo Electric Co., Ltd. | Semiconductor apparatus |
TWI236744B (en) * | 2004-06-25 | 2005-07-21 | Advanced Semiconductor Eng | Method for manufacturing stacked multi-chip package |
US7045888B2 (en) | 2004-06-29 | 2006-05-16 | Macronix International Co., Ltd. | Ultra thin dual chip image sensor package structure and method for fabrication |
JP4443334B2 (ja) | 2004-07-16 | 2010-03-31 | Towa株式会社 | 半導体素子の樹脂封止成形方法 |
US7276393B2 (en) | 2004-08-26 | 2007-10-02 | Micron Technology, Inc. | Microelectronic imaging units and methods of manufacturing microelectronic imaging units |
US8324725B2 (en) | 2004-09-27 | 2012-12-04 | Formfactor, Inc. | Stacked die module |
TWI251886B (en) | 2004-11-03 | 2006-03-21 | Advanced Semiconductor Eng | Sensor chip for defining molding exposed region and method for manufacturing the same |
KR100616670B1 (ko) | 2005-02-01 | 2006-08-28 | 삼성전기주식회사 | 웨이퍼 레벨의 이미지 센서 모듈 및 그 제조방법 |
JP2006278726A (ja) * | 2005-03-29 | 2006-10-12 | Sharp Corp | 半導体装置モジュール及び半導体装置モジュールの製造方法 |
US7364945B2 (en) | 2005-03-31 | 2008-04-29 | Stats Chippac Ltd. | Method of mounting an integrated circuit package in an encapsulant cavity |
JP5346578B2 (ja) * | 2005-03-31 | 2013-11-20 | スタッツ・チップパック・リミテッド | 半導体アセンブリおよびその作製方法 |
US7354800B2 (en) | 2005-04-29 | 2008-04-08 | Stats Chippac Ltd. | Method of fabricating a stacked integrated circuit package system |
US7518224B2 (en) | 2005-05-16 | 2009-04-14 | Stats Chippac Ltd. | Offset integrated circuit package-on-package stacking system |
US7746656B2 (en) | 2005-05-16 | 2010-06-29 | Stats Chippac Ltd. | Offset integrated circuit package-on-package stacking system |
US7489022B2 (en) | 2005-08-02 | 2009-02-10 | Viasat, Inc. | Radio frequency over-molded leadframe package |
SG130055A1 (en) * | 2005-08-19 | 2007-03-20 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices |
SG130066A1 (en) * | 2005-08-26 | 2007-03-20 | Micron Technology Inc | Microelectronic device packages, stacked microelectronic device packages, and methods for manufacturing microelectronic devices |
TWI292617B (en) | 2006-02-03 | 2008-01-11 | Siliconware Precision Industries Co Ltd | Stacked semiconductor structure and fabrication method thereof |
SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
US8704349B2 (en) | 2006-02-14 | 2014-04-22 | Stats Chippac Ltd. | Integrated circuit package system with exposed interconnects |
US7385299B2 (en) | 2006-02-25 | 2008-06-10 | Stats Chippac Ltd. | Stackable integrated circuit package system with multiple interconnect interface |
US7501697B2 (en) | 2006-03-17 | 2009-03-10 | Stats Chippac Ltd. | Integrated circuit package system |
US7288835B2 (en) * | 2006-03-17 | 2007-10-30 | Stats Chippac Ltd. | Integrated circuit package-in-package system |
US7420269B2 (en) | 2006-04-18 | 2008-09-02 | Stats Chippac Ltd. | Stacked integrated circuit package-in-package system |
TWI309079B (en) * | 2006-04-21 | 2009-04-21 | Advanced Semiconductor Eng | Stackable semiconductor package |
TWI339436B (en) | 2006-05-30 | 2011-03-21 | Advanced Semiconductor Eng | Stackable semiconductor package |
TWI298198B (en) * | 2006-05-30 | 2008-06-21 | Advanced Semiconductor Eng | Stackable semiconductor package |
US7468556B2 (en) * | 2006-06-19 | 2008-12-23 | Lv Sensors, Inc. | Packaging of hybrid integrated circuits |
US7535086B2 (en) | 2006-08-03 | 2009-05-19 | Stats Chippac Ltd. | Integrated circuit package-on-package stacking system |
US8198735B2 (en) | 2006-12-31 | 2012-06-12 | Stats Chippac Ltd. | Integrated circuit package with molded cavity |
US20080217761A1 (en) | 2007-03-08 | 2008-09-11 | Advanced Chip Engineering Technology Inc. | Structure of semiconductor device package and method of the same |
US8084849B2 (en) | 2007-12-12 | 2011-12-27 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking |
US7781261B2 (en) | 2007-12-12 | 2010-08-24 | Stats Chippac Ltd. | Integrated circuit package system with offset stacking and anti-flash structure |
US7985628B2 (en) | 2007-12-12 | 2011-07-26 | Stats Chippac Ltd. | Integrated circuit package system with interconnect lock |
US7683469B2 (en) * | 2008-05-30 | 2010-03-23 | Stats Chippac Ltd. | Package-on-package system with heat spreader |
-
2007
- 2007-12-12 US US11/954,601 patent/US8536692B2/en active Active
-
2008
- 2008-10-28 TW TW097141321A patent/TWI478250B/zh active
- 2008-11-25 KR KR1020080117650A patent/KR101572620B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI401752B (zh) * | 2009-12-31 | 2013-07-11 | Advanced Semiconductor Eng | 晶片封裝結構之製造方法 |
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US20090152700A1 (en) | 2009-06-18 |
KR101572620B1 (ko) | 2015-12-01 |
US8536692B2 (en) | 2013-09-17 |
KR20090063093A (ko) | 2009-06-17 |
TWI478250B (zh) | 2015-03-21 |
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