TW200913002A - Plasma treatment apparatus and short circuit of high frequency current - Google Patents

Plasma treatment apparatus and short circuit of high frequency current Download PDF

Info

Publication number
TW200913002A
TW200913002A TW097113812A TW97113812A TW200913002A TW 200913002 A TW200913002 A TW 200913002A TW 097113812 A TW097113812 A TW 097113812A TW 97113812 A TW97113812 A TW 97113812A TW 200913002 A TW200913002 A TW 200913002A
Authority
TW
Taiwan
Prior art keywords
short
storage container
capacitor
substrate
plate
Prior art date
Application number
TW097113812A
Other languages
English (en)
Chinese (zh)
Inventor
Kazuo Sasaki
Michikazu Nakamura
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200913002A publication Critical patent/TW200913002A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW097113812A 2007-04-17 2008-04-16 Plasma treatment apparatus and short circuit of high frequency current TW200913002A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007108421A JP4887202B2 (ja) 2007-04-17 2007-04-17 プラズマ処理装置及び高周波電流の短絡回路

Publications (1)

Publication Number Publication Date
TW200913002A true TW200913002A (en) 2009-03-16

Family

ID=38305381

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097113812A TW200913002A (en) 2007-04-17 2008-04-16 Plasma treatment apparatus and short circuit of high frequency current

Country Status (4)

Country Link
JP (1) JP4887202B2 (ja)
KR (1) KR101002557B1 (ja)
CN (2) CN101882567B (ja)
TW (1) TW200913002A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758669B (zh) * 2018-12-17 2022-03-21 大陸商中微半導體設備（上海）股份有限公司 電容耦合電漿蝕刻設備

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SG188141A1 (en) * 2008-02-08 2013-03-28 Lam Res Corp A protective coating for a plasma processing chamber part and a method of use
TWI495402B (zh) * 2008-10-09 2015-08-01 Applied Materials Inc 具有射頻迴流路徑之電漿處理腔室
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
JP5643528B2 (ja) 2009-03-30 2014-12-17 東京エレクトロン株式会社 基板処理装置
WO2011034335A2 (ko) * 2009-09-18 2011-03-24 주성엔지니어링(주) 플라즈마 처리 장치
JP5347868B2 (ja) 2009-09-24 2013-11-20 東京エレクトロン株式会社 載置台構造及びプラズマ成膜装置
KR101173293B1 (ko) 2009-12-31 2012-08-13 엘아이지에이디피 주식회사 기판 처리 장치의 벽면 에너지 손실 저감 장치
US9441296B2 (en) 2011-03-04 2016-09-13 Novellus Systems, Inc. Hybrid ceramic showerhead
JP5731715B1 (ja) * 2014-03-31 2015-06-10 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
JP6455783B2 (ja) * 2015-03-11 2019-01-23 Ｓｐｐテクノロジーズ株式会社 高周波電力システム及びこれを備えたプラズマ処理装置
WO2018218612A1 (en) * 2017-06-01 2018-12-06 Applied Materials, Inc. Extend ground straps lifetime in pecvd process chamber
CN111586957B (zh) * 2019-02-19 2021-05-04 大连理工大学 一种容性耦合等离子体放电装置
WO2020222764A1 (en) * 2019-04-29 2020-11-05 Applied Materials, Inc. Ground strap assemblies
CN114203514A (zh) * 2021-12-14 2022-03-18 拓荆科技股份有限公司 晶圆支撑座及工艺腔体
CN115341198B (zh) * 2022-07-05 2023-08-04 湖南红太阳光电科技有限公司 一种平板式pecvd设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5314343A (en) * 1993-06-30 1994-05-24 Rosco, Inc. Grounding strap
KR100471728B1 (ko) * 1996-04-12 2005-03-14 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마 처리장치
JPH1079350A (ja) * 1996-09-04 1998-03-24 Kokusai Electric Co Ltd プラズマ処理装置
JP3710081B2 (ja) * 1997-11-30 2005-10-26 アルプス電気株式会社 プラズマ処理装置
JP3565311B2 (ja) * 1997-12-17 2004-09-15 アルプス電気株式会社 プラズマ処理装置
US6857387B1 (en) * 2000-05-03 2005-02-22 Applied Materials, Inc. Multiple frequency plasma chamber with grounding capacitor at cathode
JP4672169B2 (ja) * 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
JP4024053B2 (ja) * 2002-02-08 2007-12-19 キヤノンアネルバ株式会社 高周波プラズマ処理方法及び高周波プラズマ処理装置
CN100543944C (zh) * 2004-04-30 2009-09-23 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
US7534301B2 (en) * 2004-09-21 2009-05-19 Applied Materials, Inc. RF grounding of cathode in process chamber

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI758669B (zh) * 2018-12-17 2022-03-21 大陸商中微半導體設備（上海）股份有限公司 電容耦合電漿蝕刻設備
US11670515B2 (en) 2018-12-17 2023-06-06 Advanced Micro-Fabrication Equipment Inc. China Capacitively coupled plasma etching apparatus

Also Published As

Publication number Publication date
CN101882567A (zh) 2010-11-10
JP4887202B2 (ja) 2012-02-29
CN101290869A (zh) 2008-10-22
KR20080093904A (ko) 2008-10-22
CN101290869B (zh) 2010-08-11
CN101882567B (zh) 2013-05-01
KR101002557B1 (ko) 2010-12-21
JP2007180596A (ja) 2007-07-12

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