TWI758669B - 電容耦合電漿蝕刻設備 - Google Patents
電容耦合電漿蝕刻設備 Download PDFInfo
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Abstract
本發明提供一種電容耦合電漿蝕刻設備,下電極固定於導電支撐桿的下端,在導電支撐桿的下端固定有可伸縮導電部,該可伸縮導電部沿導電支撐桿的軸向伸縮,同時,藉由電連接部將可伸縮導電部的下端與射頻匹配器輸出端之間的電連接起來,射頻匹配器的回路端固定於腔體的底部。這樣,可以藉由可伸縮導電部的伸縮來控制下電極的高度,從而,使得上下極板之間的間距可調,同時,射頻匹配器的回路端固定於腔體底部,在可伸縮導電部沿軸向伸縮時,減少電連接部在可伸縮導電部沿徑向方向上的移動,不會引起射頻回路的不穩定性,從而實現極板間距的可調的同時,兼顧射頻回路的穩定性。
Description
本發明係關於半導體加工設備領域,特別係關於一種電容耦合電漿蝕刻設備。
電容耦合電漿處理設備,是借助於射頻耦合放電產生電漿,進而利用電漿進行沉積、蝕刻等加工製程,其中,產生電漿的電極之間的極板間距是重要的參數,尤其是在電漿蝕刻設備中,隨著加工製程的要求不斷提高,需要在不同的極板間距下完成不同的蝕刻步驟。然而目前的電漿蝕刻設備中的極板間距是固定不可調的,而由於電極還作為射頻回路中的一部分,要實現極板間距的可調,需要同時兼顧射頻回路的穩定性。
有鑑於此,本發明的目的在於提供一種電容耦合電漿蝕刻設備,實現極板間距可調,同時兼顧射頻回路的穩定性。
為實現上述目的,本發明有如下技術方案:
一種電容耦合電漿蝕刻設備,包括:
腔體;
設置於腔體內的上電極;
設置於腔體內且與上電極相對設置的基座,基座包括下電極,下電極固定於導電支撐桿上;
固定於導電支撐桿下端的可伸縮導電部,可伸縮導電部沿導電支撐桿的軸向伸縮;
固定連接於可伸縮導電部下端與射頻匹配器輸出端之間的電連接部,射頻匹配器的回路端固定於腔體底部。
可選地,可伸縮導電部的軸心與導電支撐桿的軸心重疊。
可選地,腔體包括側壁以及底壁,底壁具有開口,下電極位於開口之上;進一步包括:
可伸縮密封部,可伸縮密封部的兩端分別與基座以及底壁固定,藉由可伸縮密封部使得下電極的上表面密閉設置於腔體所在的容置空間內,可伸縮密封部沿導電支撐桿的軸向伸縮。
可選地,基座進一 步包括一個絕緣環,絕緣環與側壁之間具有間隙,絕緣環用於下電極與腔體之間的電性隔離,基座藉由絕緣環與可伸縮密封部固定,藉由絕緣環以及可伸縮密封部使得下電極的上表面密閉設置於腔體所在的容置空間內。
可選地,下電極上設置有靜電夾盤,絕緣環環繞下電極的側壁,在絕緣環上進一步設置有環繞靜電夾盤的聚焦環。
可選地,可伸縮密封部為密封波紋管。
可選地,進一步包括接地環,腔體包括側壁以及底壁,接地環位於腔體底壁上,接地環與側壁之間為空腔,空腔之上設置有電漿約束環,電漿約束環與空腔構成排氣腔,電漿約束環包括導電部件;
設備的射頻功率的路徑為:從射頻匹配器輸出端輸出的射頻功率進入下電極後,經過位於下電極上方的電漿,而後經過返回路徑回到射頻匹配器的回路端,返回路徑包括沿側壁上部內壁的第一流路、位於約束環下表面的第二流路以及沿接地環的第三流路,第一流路、第二流路和第三流路依序相接。
射頻匹配器的數量為一個或複數個,複數個射頻匹配器具有不同的頻率及功率。
可選地,導電支撐桿、可伸縮導電部以及電連接部外進一步設置有射頻屏蔽罩。
可選地,電連接部沿包括沿可伸縮導電部的徑向方向的橫向部,且橫向部為剛性連接部。本發明實施例提供的電容耦合電漿體蝕刻設備,下電極固定於導電支撐桿的下端,在導電支撐桿的下端固定有可伸縮導電部,該可伸縮導電部沿導電支撐桿的軸向伸縮,同時,藉由電連接部將可伸縮導電部的下端與射頻匹配器輸出端之間的電連接起來,射頻匹配器的回路端固定於腔體的底部。這樣,可以藉由可伸縮導電部的伸縮來控制下電極的高度,從而,使得上下極板之間的間距可調,同時,射頻匹配器的回路端固定於腔體底部,在可伸縮導電部沿軸向伸縮時,減少電連接部在可伸縮導電部沿徑向方向上的移動,不會引起射頻回路的不穩定性,從而實現極板間距的可調的同時,兼顧射頻回路的穩定性。
為使本發明的上述目的、特徵和優點能夠更加明顯易懂,下面結合圖式對本發明的具體實施方式做詳細的說明。
在下面的描述中闡述了很多具體細節以便於充分理解本發明,但是本發明還可以採用其他不同於在此描述的其它方式來實施,本領域具有通常知識者可以在不違背本發明內涵的情況下做類似推廣,因此本發明不受下面公開的具體實施例的限制。
參考第1圖所示,為本發明實施例的電容耦合電漿蝕刻設備的剖面結構示意圖。該電漿蝕刻設備具有處理腔室,處理腔室為由腔體100以及其他的必要部件圍成的密閉空間,以使得晶片可以在處理腔室的真空環境中完成蝕刻加工製程。
在腔體100內設置有上電極102以及與上電極102相對設置的基座10,基座10包括下電極105,下電極105固定於導電支撐桿110上,導電支撐桿110下端固定於可伸縮導電部112上,可伸縮導電部112的下端與射頻匹配器120的輸出端之間固定連接有電連接部114,射頻匹配器120的回路端固定於腔體100底部。
上電極102為設置於腔體100上部的電極,通常地,上電極102也被稱作噴淋頭,通常地,上電極102處於處理腔室外的端面上設置有進氣口(圖未示出),處於處理腔室內的端面上設置有通氣孔103,製程氣體通過進氣口進入上電極102,並通過通氣孔103輸送至處理腔室內。
下電極105依序藉由導電支撐桿110、可伸縮導電部112以及電連接部114連接至射頻匹配器120的輸出端,射頻匹配器120與射頻電源(圖未示出)連接,從而將射頻功率提供至下電極105。
在一些的實施例中,下電極105可以連接一個或複數個射頻匹配器120,例如可以為2個射頻匹配器,在連接複數個射頻匹配器的實施例中,每個射頻匹配器可以提供不同於其他射頻匹配器的射頻頻率和功率,以適用於不同加工製程的需求,在這些實施例中,上電極102可以接地。在另一些實施例中,下電極105可以連接一射頻匹配器,上電極可以連接另一射頻匹配器,這兩個射頻匹配器可以提供不同的射頻頻率和功率。
下電極105同時還可以作為晶片的支撐結構,在下電極內或者下電極之上的絕緣材料層中可以設置有溫度控制裝置(圖未示出),用於為晶片提供合適的溫度,溫度控制裝置可以是焦耳熱裝置,例如藉由電阻實現溫度控制,也可以熱傳導通道,例如藉由熱傳導通道中的冷卻劑實現溫度控制,溫度控制裝置可以具有分區排序的方式,使得晶片不同區域溫度可以分別進行控制,實現溫度控制均勻性的目的。
在下電極105上還可以設置有靜電夾盤(ESC,Electrostatic Chuck)107,用於晶片的吸附,靜電夾盤107可以設置於絕緣材料層中,絕緣材料例如是陶瓷材料。
在本申請實施例中,下電極105連接射頻源,作為射頻功率的輸出端,上電極102和腔體100可以接地,腔體100、或者腔體以及與腔體電連接的其他一些附件可以作為射頻功率的返回路徑,具體的,射頻功率從射頻匹配器120輸出端輸出,依序經過電連接部114、可伸縮導電部112和導電支撐桿110之後,進入下電極105,製程氣體通過上電極102通入腔體100內之後,在射頻功率作用下,在上電極102和下電極105之間的空間,也就是下電極105之上的空間產生電漿,射頻功率藉由電漿經過腔體100內的返回路徑返回至射頻匹配器的回路端,根據不同的腔體結構以及設計需要,返回路徑可以具有不同的設置。
下電極105由導電支撐桿110固定支撐,導電支撐桿110固定於可伸縮導電部112上,導電支撐桿110以及可伸縮導電部112都為導電材料製成,可以是實心或空心結構,可伸縮導電部112可以在驅動裝置(圖未示出)的驅動下,沿導電支撐桿的軸向伸縮,從而帶動下電極105一併上下運動,從而,使得下電極105與上電極102之間的間距可調節。在一些實施例中,可伸縮導電部可以為導電波紋管或伸縮導電軸等,進一步地,可伸縮導電部112的軸心與導電支撐桿110的軸心重疊。這樣,在可伸縮導電部112伸縮時,射頻功率的分佈相對較為穩定,提高射頻功率的穩定性。
射頻匹配器120與射頻源(連接),用於輸出需要的射頻功率,其具有輸出端以及回路端,輸出端用於輸出射頻功率,回路端用於接收返回的射頻功率。其中,射頻匹配器120的回路端固定連接至腔體100的底部,電連接部114的一端固定至射頻匹配器120輸出端、另一端固定至可伸縮導電部112的下端,電連接部114為導電材料,將射頻匹配器120輸出的射頻功率傳送至可伸縮導電部112,進而傳送至下電極105。這樣,射頻匹配器120為固定連接,從而將電連接部114的一端固定,另一端僅隨可伸縮導電部112在導電支撐部110的軸向上有移動,軸向上的移動對射頻功率分佈的影響很小,不會帶來射頻功率不穩定的不良影響。
在較佳的實施例中,如第1圖所示,電連接部114包括沿可伸縮導電部的徑向方向的橫向部,且該橫向部為剛性連接部,也即隨著可伸縮導電部112的移動,該橫向部不會適應性的位移發生。
在電漿蝕刻設備的處理腔室為由腔體100以及其他的必要部件圍成的密閉空間,以使得晶片可以在處理腔室的真空環境中完成刻蝕加工製程。在本申請中,在腔體100的頂部會設置上電極102,上電極102可以設置於腔體100內部,藉由其他的部件,如上蓋板等結構,實現腔體100頂部的密封,上電極102還可以內嵌於腔體100頂部,此處,上電極102的設置僅為示例,本申請對於上電極102的設置方式以及腔體100頂部的密封並不做限定。
在本申請實施例中,腔體100包括側壁1001以及底壁1002,下電極105位於開口之上,使得導電支撐桿110以及可伸縮導電部112在開口位置能夠上下移動。在基座10與底壁1002之間固定連接有可伸縮密封部140,該可伸縮密封部140為絕緣材料,例如可以為密封波紋管,即用於密封作用的波紋管,該可伸縮密封部140用於將下電極105的上表面密封設置於腔體100所在的容置空間內,同時,該可伸縮密封部140沿導電支撐桿110的軸向伸縮,也就是說,與可伸縮導電部112具有相同的伸縮方向,此處下電極105的上表面即朝向上電極102的表面。這樣,在當可伸縮導電部112被驅動伸縮時,可伸縮密封部140將與下電極一同伸縮,同時,藉由可伸縮密封部140將下電極105密封至腔體100內。可以理解的是,該可伸縮密封部140可以直接或間接與下電極固定,當基座上進一步包括其他部件時,可伸縮密封部140可以與其他部件配合,從而實現腔體底部的密封,使得下電極105朝向上電極102的表面位於密閉腔室內。
在本申請一些實施例中,基座10進一步包括一個絕緣環132,絕緣環132可以固定於下電極105,絕緣環132由絕緣材料製成,例如可以為陶瓷材料,絕緣環132與側壁1001之間具有間隙,該絕緣環132用於下電極105與腔體100之間的電性隔離,這樣,下電極105通過該絕緣環132與可伸縮密封部140固定,通過絕緣環132以及可伸縮密封部140使得下電極105的上表面密閉設置於腔體100所在的容置空間內。在該示例中,參考第1圖所示,腔體100下部的密閉空間由腔體的側壁1001、底壁1002、可伸縮密封部140的內壁以及絕緣環132的側壁圍成,使得下電極105的上表面105置於腔體100內,而上電極105下表面以及導電支撐桿110、可伸縮導電桿112置於腔體100外,腔體100內將提供真空環境用於蝕刻製程的進行。
絕緣環132可以根據具體的需要來設置,在一個具體的示例中,如第1圖所示,下電極105的中心區域高於邊緣區域,中心區域用於晶片的支撐,具有與晶片基本相同的形狀和大小,靜電夾盤107設置於該中心區域之上,該絕緣環132環繞該邊緣區域以及下電極105的邊緣、下電極105下部區域,並延伸至可伸縮密封部140的外側。
進一步地,在絕緣環132上進一步設置有環繞靜電夾盤107的聚焦環130,聚焦環130用於防止電弧放電,該具體的示例中,如第1圖所示,該聚焦環130靠近靜電夾盤107的內壁的上部為擴口的斜切面,聚焦環130靠近靜電夾盤107的外緣為凹陷區,該凹陷區可以用於放置邊緣環(圖未示出)。
在本申請實施例中,腔體100為導體材料,腔體100同時作為射頻功率的返回路徑,使得射頻功率藉由電漿經過腔體100內的返回路徑返回至射頻匹配器的回路端。在一些具體的實施例中,進一步包括接地環101以及在腔體100側壁1001的中部設置的電漿約束環134,電漿約束環134為疊層結構,由下至上包括下導電部件和上電介質材料層,接地環101與側壁1001之間為空腔104,空腔104上設置有電漿約束環134,由電漿約束環134與空腔104構成排氣腔,用於廢氣的排出。其中,接地環101為導電的隔離壁,一方面能夠作為射頻返回路徑,另一方面在橫向隔離出排氣腔的空間;電漿約束環134為透氣結構,使得腔體內多餘的電漿熄滅並使得廢氣進入排氣腔中,通常地,排氣腔進一步設置有氣泵,藉由氣泵將腔室內的廢氣排除。
在該實施例中,如第1圖所示,腔體100內的返回路徑包括沿腔體側壁1001上部內壁的第一流路R1、位於約束環下表面的第二流路R2以及沿沿接地環101的第三流路R3,第一流路R1、第二流路R2和第三流路R3依序相接,進而,射頻功率通過腔體底壁1002返回至射頻匹配器120的回路端。這樣,在該實施例中,通過腔體內的射頻功率的流路直接返回至射頻匹配器的返回端,有效地縮短了射頻路徑。
此外,導電支撐桿110、可伸縮導電部112、電連接部11、腔體100都具有射頻輻射,它們外部都可以設置有射頻屏蔽罩,根據它們之間的連接,可以藉由一個或複數個射頻屏蔽罩實現輻射屏蔽,在該示例中,如第1圖所示,可以藉由腔體100的射頻屏蔽罩(圖未示出)以及可伸縮導電部112、電連接部11外的射頻屏蔽罩150,實現輻射屏蔽。
以上所述僅是本發明的較佳實施方式,雖然本發明已以較佳實施例披露如上,然而並非用以限定本發明。任何熟悉本領域的具有通常知識者,在不脫離本發明技術方案範圍情況下,都可利用上述揭示的方法和技術內容對本發明技術方案做出許多可能的變動和修飾,或修改為等同變化的等效實施例。因此,凡是未脫離本發明技術方案的內容,依據本發明的技術實質對以上實施例所做的任何的簡單修改、等同變化及修飾,均仍屬本發明技術方案保護的範圍內。
10:基座
100:腔體
101:接地環
102:上電極
103:通氣孔
104:空腔
105:下電極
107:靜電夾盤
110:導電支撐桿
112:可伸縮導電部
114:電連接部
120:射頻匹配器
130:聚焦環
132:絕緣環
134:電漿約束環
140:可伸縮密封部
150:射頻屏蔽罩
1001:側壁
1002:底壁
R1:第一流路
R2:第二流路
R3:第三流路
為了更清楚地說明本發明實施例或現有技術中的技術方案,下面將對實施例或現有技術描述中所需要使用的圖式作簡單地介紹,顯而易見地,下面描述中的圖式是本發明的一些實施例,對於本領域普通具有通常知識者來講,在不付出創造性勞動的前提下,還可以根據這些圖式獲得其他的圖式。
第1圖為根據本發明實施例的電容耦合電漿蝕刻設備的剖面結構示意圖。
10:基座
100:腔體
101:接地環
102:上電極
103:通氣孔
104:空腔
105:下電極
107:靜電夾盤
110:導電支撐桿
112:可伸縮導電部
114:電連接部
120:射頻匹配器
130:聚焦環
132:絕緣環
134:電漿約束環
140:可伸縮密封部
150:射頻屏蔽罩
1001:側壁
1002:底壁
R1:第一流路
R2:第二流路
R3:第三流路
Claims (10)
- 一種電容耦合電漿蝕刻設備,其包括: 一腔體; 一上電極設置於該腔體內; 一基座,設置於該腔體內且與該上電極相對設置,該基座包括一下電極,該下電極固定於一導電支撐桿上; 一可伸縮導電部,固定於該導電支撐桿下端,該可伸縮導電部沿該導電支撐桿的軸向伸縮; 一電連接部,固定連接於該可伸縮導電部下端與一射頻匹配器輸出端之間,該射頻匹配器的一回路端固定於該腔體底部。
- 如請求項1所述的電容耦合電漿蝕刻設備,其中該可伸縮導電部的軸心與該導電支撐桿的軸心重疊。
- 如請求項1所述的電容耦合電漿蝕刻設備,其中該腔體包括一側壁以及一底壁,該底壁具有一開口,該下電極位於該開口之上;進一步包括: 一可伸縮密封部,該可伸縮密封部的兩端分別與該基座以及該底壁固定,藉由該可伸縮密封部使得該下電極的上表面密閉設置於該腔體所在的容置空間內,該可伸縮密封部沿該導電支撐桿的軸向伸縮。
- 如請求項3所述的電容耦合電漿蝕刻設備,其中該基座進一步包括一個絕緣環,該絕緣環與該側壁之間具有間隙,該絕緣環用於該下電極與該腔體之間的電性隔離,該基座藉由該絕緣環與該可伸縮密封部固定,藉由該絕緣環以及該可伸縮密封部使得該下電極的上表面密閉設置於該腔體所在的容置空間內。
- 如請求項4所述的電容耦合電漿蝕刻設備,其中該下電極上設置有一靜電夾盤,該絕緣環環繞該下電極的該側壁,在該絕緣環上進一步設置有環繞該靜電夾盤的一聚焦環。
- 如請求項3至5中任一項所述的電容耦合電漿蝕刻設備,其中該可伸縮密封部為密封波紋管。
- 如請求項1所述的電容耦合電漿蝕刻設備,其進一步包括一接地環,該腔體包括一側壁以及一底壁,該接地環位於該腔體的該底壁上,該接地環與該側壁之間為一空腔,該空腔之上設置有一電漿約束環,該電漿約束環與該空腔構成排氣腔,該電漿約束環包括導電部件; 一設備的射頻功率的路徑為:從該射頻匹配器輸出端輸出的射頻功率進入該下電極後,經過位於該下電極上方的電漿,而後經過一返回路徑回到該射頻匹配器的該回路端,該返回路徑包括沿該側壁上部內壁的一第一流路、位於約束環下表面的一第二流路以及沿該接地環的一第三流路,該第一流路、該第二流路和該第三流路依序相接。
- 如請求項1所述的電容耦合電漿蝕刻設備,其中該射頻匹配器的數量為一個或複數個,複數個該射頻匹配器具有不同的頻率及功率。
- 如請求項1所述的電容耦合電漿蝕刻設備,其中該導電支撐桿、該可伸縮導電部以及該電連接部外進一步設置有一射頻屏蔽罩。
- 如請求項1所述的電容耦合電漿蝕刻設備,其中該電連接部沿包括沿該可伸縮導電部的徑向方向的一橫向部,且該橫向部為剛性連接部。
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CN112397370B (zh) * | 2020-11-16 | 2023-12-22 | 北京北方华创微电子装备有限公司 | 上电极组件及半导体工艺设备 |
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US20200194275A1 (en) | 2020-06-18 |
US11670515B2 (en) | 2023-06-06 |
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TW202042276A (zh) | 2020-11-16 |
KR20200075765A (ko) | 2020-06-26 |
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