JP6597732B2 - ガス処理装置 - Google Patents
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- JP6597732B2 JP6597732B2 JP2017142838A JP2017142838A JP6597732B2 JP 6597732 B2 JP6597732 B2 JP 6597732B2 JP 2017142838 A JP2017142838 A JP 2017142838A JP 2017142838 A JP2017142838 A JP 2017142838A JP 6597732 B2 JP6597732 B2 JP 6597732B2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- H—ELECTRICITY
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- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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Description
前記処理室に設けられ、前記基板が載置される載置部と、
前記載置部の上方側に位置して前記処理室の天井部を構成し、前記処理ガスをシャワー状に供給するための複数の第1のガス供給口が形成されるガス供給部と、
前記ガス供給部に上方から対向し、前記処理ガスを横方向に拡散させるための第1の拡散空間を画成する平坦な対向面を備えると共に、前記処理ガスの供給路を形成するガス供給路形成部と、
前記対向面の中央部のまわりに設けられる凹部と、
前記供給路から供給された前記処理ガスを前記第1の拡散空間に横方向に分散させるために周方向に沿って複数のガス吐出口が形成され、前記対向面の中央部のまわりに複数、各々当該対向面から突出せずに前記凹部内に設けられるガス分散部と、
を備えたことを特徴とする。
以下、本発明に関連して行われた評価試験について説明する。
評価試験1
評価試験1−1として図1などで説明した成膜装置1を用いて、図7〜図10で説明したステップS1〜S4に従って成膜処理を行ったときのウエハWの面内における膜厚の分布を調べた。従って、この評価試験1−1で用いた成膜装置1において、ガス分散部44は溝41内に設けられており、対向面34から突出していない。ただし、パージガスは既述のガス貯留タンク72B、72Eを介さず、単位時間あたり比較的少ない流量でガス分散部44に供給されるようにした。また、1サイクルに要する時間は0.38秒に設定した。さらに、評価試験1−2として、パージガスは既述のガス貯留タンク72B、72Eを介して供給され、単位時間あたりにガス供給路形成部3に供給される当該パージガスの流量が、評価試験1−1よりも大きいことを除いては、評価試験1−1と同じ条件で成膜処理を行い、ウエハWの面内における膜厚の分布を調べた。
評価試験2として、上記の評価試験1−2と同様にパージガスを比較的大きな流量で供給することでTiN膜の成膜処理を行い、ウエハWの面内の各部における膜厚を測定した。従って、評価試験2では図1などで説明した、ガス分散部44が対向面34から突出しない成膜装置1を用いている。また、比較試験2として、上記の比較試験1−2と同様にパージガスを比較的大きな流量で供給することでTiN膜の成膜処理を行い、ウエハWの面内の各部における膜厚を測定した。従って、比較試験2ではガス分散部44が対向面34から突出した成膜装置を用いている。また、この比較試験2で用いた成膜装置では、評価試験2で用いた成膜装置1とは図5で説明したガス供給路5の構成が若干異なっており、合流路53の下流側が分岐せずにガス導入用拡散空間55に接続されている。評価試験2、比較試験2共に、1サイクルに要する時間は0.38秒に設定した。
10 制御部
11 処理容器
17 排気機構
21 載置台
3 ガス供給路形成部
34 対向面
36 下側シャワープレート
38 ガス供給口
37 下側拡散空間
41 溝
44 ガス分散部
46 ガス吐出口
Claims (10)
- 真空雰囲気である処理室内の基板に対して処理ガスを供給して処理を行うガス処理装置において、
前記処理室に設けられ、前記基板が載置される載置部と、
前記載置部の上方側に位置して前記処理室の天井部を構成し、前記処理ガスをシャワー状に供給するための複数の第1のガス供給口が形成されるガス供給部と、
前記ガス供給部に上方から対向し、前記処理ガスを横方向に拡散させるための第1の拡散空間を画成する平坦な対向面を備えると共に、前記処理ガスの供給路を形成するガス供給路形成部と、
前記対向面の中央部のまわりに設けられる凹部と、
前記供給路から供給された前記処理ガスを前記第1の拡散空間に横方向に分散させるために周方向に沿って複数のガス吐出口が形成され、前記対向面の中央部のまわりに複数、各々当該対向面から突出せずに前記凹部内に設けられるガス分散部と、
を備えたことを特徴とするガス処理装置。 - 前記ガス供給路形成部は、
前記対向面の中央部に下方に向けて開口する第2のガス供給口と、
前記ガス分散部及び前記第2のガス供給口に前記処理ガスを導入するために、当該ガス分散部及び第2のガス供給口に共通して設けられ、上流側から前記処理ガスが供給される共通流路と、
を備えることを特徴とする請求項1記載のガス処理装置。 - 前記第2のガス供給口は前記処理ガスを前記第1の拡散空間にシャワー状に供給するために複数設けられ、
前記ガス供給路形成部は、前記処理ガスを横方向に拡散させて前記第2のガス供給口に供給するために、各第2のガス供給口に共通の第2のガス拡散空間を備え、
前記共通流路は、前記ガス分散部及び前記第2のガス拡散空間に前記処理ガスを供給することを特徴とする請求項2記載のガス処理装置。 - 前記第1のガス供給口と前記第2のガス供給口とは、互いに重ならないことを特徴とする請求項2または3記載のガス処理装置。
- 前記ガス処理装置は、前記処理ガスである原料ガス、雰囲気を置換するための置換ガス、及び前記原料ガスと反応して前記基板上に反応生成物を生成するための反応ガスを順番に複数サイクル供給して成膜する成膜装置であり、
前記処理ガスの供給路の上流側には、前記原料ガス用の流路、反応ガス用の流路及び置換ガス用の流路が接続されていることを特徴とする請求項1ないし4のいずれか一つに記載のガス処理装置。 - 前記原料ガス用の流路と前記反応ガス用の流路との合流点から前記各ガス分散部に至るまでの流路の長さが互いに同じであることを特徴とする請求項5記載のガス処理装置。
- 前記ガス供給路形成部には、前記対向面の中央部に下方に向けて開口する第2のガス供給口と、前記処理ガスを横方向に拡散させて前記第2のガス供給口に供給するために、各第2のガス供給口に共通の第2のガス拡散空間と、前記ガス分散部及び前記第2のガス供給口に前記処理ガスを導入するために、当該ガス分散部及び第2のガス供給口に共通して設けられ、上流側から前記処理ガスが供給される共通流路と、が設けられ、
前記原料ガス用の流路と前記反応ガス用の流路との合流点から前記各ガス分散部に至るまでの流路の長さと、前記合流点から前記第2のガス拡散空間に至るまでの流路の長さと、が互いに同じであることを特徴とする請求項5または6記載のガス処理装置。 - 前記処理ガスの供給路は前記ガス分散部毎に設けられ、
前記ガス供給路形成部は、前記各供給路にガスを供給するために、横方向に前記処理ガスを拡散させる第3のガス拡散空間と、
前記原料ガス用の流路と前記反応ガス用の流路との合流点の下流側が分岐することで形成され、前記処理ガス、前記反応ガス、前記置換ガスを各々、前記第3の拡散空間における互いに異なる位置に供給するための分岐路と、
を備えることを特徴とする請求項5ないし7のいずれか一つに記載のガス処理装置。 - 前記置換ガス流路に設けられ、前記置換ガスを貯留するガス貯留部と、
前記置換ガス流路において前記ガス貯留部の下流側に設けられ、前記置換ガスが貯留されて前記ガス貯留部内が昇圧した後、当該ガス貯留部から前記置換ガスが前記処理室に供給されるように開閉されるバルブと、
を備えることを特徴とする請求項5ないし8のいずれか一つに記載のガス処理装置。 - 前記凹部は上方へ向かうにつれて開口面積が小さくなるように形成されていることを特徴とする請求項1ないし9のいずれか一つに記載のガス処理装置。
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JP2017142838A JP6597732B2 (ja) | 2017-07-24 | 2017-07-24 | ガス処理装置 |
KR1020180080444A KR102157419B1 (ko) | 2017-07-24 | 2018-07-11 | 가스 처리 장치 |
US16/035,817 US11578408B2 (en) | 2017-07-24 | 2018-07-16 | Gas processing apparatus |
CN201810819824.XA CN109295436B (zh) | 2017-07-24 | 2018-07-24 | 气体处理装置 |
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US10233543B2 (en) * | 2015-10-09 | 2019-03-19 | Applied Materials, Inc. | Showerhead assembly with multiple fluid delivery zones |
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