TW200902132A - Method for controlling process gas concentration - Google Patents
Method for controlling process gas concentration Download PDFInfo
- Publication number
- TW200902132A TW200902132A TW097117912A TW97117912A TW200902132A TW 200902132 A TW200902132 A TW 200902132A TW 097117912 A TW097117912 A TW 097117912A TW 97117912 A TW97117912 A TW 97117912A TW 200902132 A TW200902132 A TW 200902132A
- Authority
- TW
- Taiwan
- Prior art keywords
- bubbler
- temperature
- gas
- liquid
- concentration
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000012159 carrier gas Substances 0.000 claims abstract description 16
- 239000007789 gas Substances 0.000 claims abstract description 16
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 7
- 235000019253 formic acid Nutrition 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 5
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 4
- 230000005587 bubbling Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007024266A DE102007024266A1 (de) | 2007-05-23 | 2007-05-23 | Verfahren zur Steuerung der Prozessgaskonzentration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200902132A true TW200902132A (en) | 2009-01-16 |
| TWI372650B TWI372650B (https=) | 2012-09-21 |
Family
ID=39637712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097117912A TW200902132A (en) | 2007-05-23 | 2008-05-15 | Method for controlling process gas concentration |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100215853A1 (https=) |
| EP (1) | EP2150634A1 (https=) |
| JP (1) | JP2010527794A (https=) |
| KR (1) | KR20100030620A (https=) |
| CN (1) | CN101688304A (https=) |
| DE (1) | DE102007024266A1 (https=) |
| TW (1) | TW200902132A (https=) |
| WO (1) | WO2008142043A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009012200A1 (de) * | 2009-03-11 | 2010-09-16 | Centrotherm Photovoltaics Ag | Verfahren und Vorrichtung zur thermischen Umsetzung metallischer Precursorschichten in halbleitende Schichten mit Chalkogenquelle |
| JP5884448B2 (ja) * | 2011-12-01 | 2016-03-15 | 富士電機株式会社 | はんだ接合装置およびはんだ接合方法 |
| DE102012021527A1 (de) | 2012-10-31 | 2014-04-30 | Dockweiler Ag | Vorrichtung zur Erzeugung eines Gasgemisches |
| DE102024107217A1 (de) | 2024-03-13 | 2025-09-18 | Pink Gmbh Thermosysteme | Befüllvorrichtung zum Befüllen eines Bubblers, Befüllsystem und damit ausgerüstete Löt- oder Sinteranlage, sowie Verfahren zum Betreiben der Befüllvorrichtung |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4276243A (en) * | 1978-12-08 | 1981-06-30 | Western Electric Company, Inc. | Vapor delivery control system and method |
| JPS60211072A (ja) * | 1984-04-06 | 1985-10-23 | Matsushita Electric Ind Co Ltd | 揮発性物質の気化装置 |
| US4911101A (en) * | 1988-07-20 | 1990-03-27 | General Electric Company | Metal organic molecular beam epitaxy (MOMBE) apparatus |
| US5227604A (en) * | 1991-06-28 | 1993-07-13 | Digital Equipment Corporation | Atmospheric pressure gaseous-flux-assisted laser reflow soldering |
| JPH0610144A (ja) * | 1992-06-29 | 1994-01-18 | Matsushita Electric Ind Co Ltd | 低蒸気圧材料供給装置 |
| US5249733A (en) * | 1992-07-16 | 1993-10-05 | At&T Bell Laboratories | Solder self-alignment methods |
| JPH07164141A (ja) * | 1993-10-22 | 1995-06-27 | Nippon Sanso Kk | はんだ付け方法及び装置 |
| EP0784713A4 (en) * | 1994-10-11 | 2000-03-01 | Gelest Inc | Uniform TITANIUM BASE FILMS AND THEIR PRODUCTION |
| US6616767B2 (en) * | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
| DE60021955T2 (de) * | 1999-06-03 | 2006-06-14 | Shinetsu Chemical Co | Verfahren und Vorrichtung zum Verdampfen von einem flüssigen Glasvorläufer für die Herstellung von Vorformen für optische Fasern |
| US20050095859A1 (en) * | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
-
2007
- 2007-05-23 DE DE102007024266A patent/DE102007024266A1/de not_active Withdrawn
-
2008
- 2008-05-15 TW TW097117912A patent/TW200902132A/zh not_active IP Right Cessation
- 2008-05-19 JP JP2010508817A patent/JP2010527794A/ja active Pending
- 2008-05-19 WO PCT/EP2008/056104 patent/WO2008142043A1/de not_active Ceased
- 2008-05-19 KR KR1020097026555A patent/KR20100030620A/ko not_active Withdrawn
- 2008-05-19 US US12/601,311 patent/US20100215853A1/en not_active Abandoned
- 2008-05-19 EP EP08750339A patent/EP2150634A1/de not_active Withdrawn
- 2008-05-19 CN CN200880019517A patent/CN101688304A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010527794A (ja) | 2010-08-19 |
| TWI372650B (https=) | 2012-09-21 |
| KR20100030620A (ko) | 2010-03-18 |
| EP2150634A1 (de) | 2010-02-10 |
| DE102007024266A1 (de) | 2008-11-27 |
| US20100215853A1 (en) | 2010-08-26 |
| CN101688304A (zh) | 2010-03-31 |
| WO2008142043A1 (de) | 2008-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |