TW200828474A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
TW200828474A
TW200828474A TW096149165A TW96149165A TW200828474A TW 200828474 A TW200828474 A TW 200828474A TW 096149165 A TW096149165 A TW 096149165A TW 96149165 A TW96149165 A TW 96149165A TW 200828474 A TW200828474 A TW 200828474A
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TW
Taiwan
Prior art keywords
terminal
wafer
memory
chip
circuit substrate
Prior art date
Application number
TW096149165A
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English (en)
Chinese (zh)
Inventor
Hitoshi Sato
Hidetoshi Inoue
Original Assignee
Shinko Electric Ind Co
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Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200828474A publication Critical patent/TW200828474A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
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    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0652—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
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    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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    • H01L2224/4805—Shape
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    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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    • H01L2224/491—Disposition
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/102—Material of the semiconductor or solid state bodies
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    • H01L2924/143—Digital devices
    • H01L2924/1433—Application-specific integrated circuit [ASIC]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW096149165A 2006-12-22 2007-12-21 Semiconductor device manufacturing method TW200828474A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006346753A JP5006640B2 (ja) 2006-12-22 2006-12-22 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW200828474A true TW200828474A (en) 2008-07-01

Family

ID=39543426

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096149165A TW200828474A (en) 2006-12-22 2007-12-21 Semiconductor device manufacturing method

Country Status (5)

Country Link
US (1) US20080153203A1 (enExample)
JP (1) JP5006640B2 (enExample)
KR (1) KR20080059047A (enExample)
CN (1) CN101207053A (enExample)
TW (1) TW200828474A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009194143A (ja) * 2008-02-14 2009-08-27 Elpida Memory Inc 半導体装置
JP5297992B2 (ja) 2009-12-15 2013-09-25 ルネサスエレクトロニクス株式会社 外部記憶装置
KR20120056018A (ko) * 2010-11-24 2012-06-01 삼성전자주식회사 범프들과 테스트 패드들이 십자 모양으로 배열되는 반도체 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2725657B2 (ja) * 1995-10-25 1998-03-11 日本電気株式会社 半導体装置およびその製造方法
US6351028B1 (en) * 1999-02-08 2002-02-26 Micron Technology, Inc. Multiple die stack apparatus employing T-shaped interposer elements
US8089142B2 (en) * 2002-02-13 2012-01-03 Micron Technology, Inc. Methods and apparatus for a stacked-die interposer
JP4580671B2 (ja) * 2004-03-29 2010-11-17 ルネサスエレクトロニクス株式会社 半導体装置
JP4703300B2 (ja) * 2005-07-20 2011-06-15 富士通セミコンダクター株式会社 中継基板及び当該中継基板を備えた半導体装置
KR100761860B1 (ko) * 2006-09-20 2007-09-28 삼성전자주식회사 와이어 본딩 모니터링이 가능한 인터포저 칩을 갖는 적층반도체 패키지 및 이의 제조방법

Also Published As

Publication number Publication date
JP2008159815A (ja) 2008-07-10
US20080153203A1 (en) 2008-06-26
CN101207053A (zh) 2008-06-25
JP5006640B2 (ja) 2012-08-22
KR20080059047A (ko) 2008-06-26

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