TW200824151A - Semiconductor light-emitting device - Google Patents

Semiconductor light-emitting device Download PDF

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Publication number
TW200824151A
TW200824151A TW096126033A TW96126033A TW200824151A TW 200824151 A TW200824151 A TW 200824151A TW 096126033 A TW096126033 A TW 096126033A TW 96126033 A TW96126033 A TW 96126033A TW 200824151 A TW200824151 A TW 200824151A
Authority
TW
Taiwan
Prior art keywords
light
electrode
semiconductor
current
semiconductor layer
Prior art date
Application number
TW096126033A
Other languages
English (en)
Chinese (zh)
Other versions
TWI357162B (https=
Inventor
Koji Otsuka
Yoshihiko Uchida
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Publication of TW200824151A publication Critical patent/TW200824151A/zh
Application granted granted Critical
Publication of TWI357162B publication Critical patent/TWI357162B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW096126033A 2006-09-08 2007-07-17 Semiconductor light-emitting device TW200824151A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006243691A JP2008066554A (ja) 2006-09-08 2006-09-08 半導体発光素子

Publications (2)

Publication Number Publication Date
TW200824151A true TW200824151A (en) 2008-06-01
TWI357162B TWI357162B (https=) 2012-01-21

Family

ID=39288981

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096126033A TW200824151A (en) 2006-09-08 2007-07-17 Semiconductor light-emitting device

Country Status (3)

Country Link
JP (1) JP2008066554A (https=)
KR (1) KR100914110B1 (https=)
TW (1) TW200824151A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424587B (zh) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
CN103887418B (zh) * 2012-12-22 2017-06-30 赛恩倍吉科技顾问（深圳）有限公司 发光芯片组合

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2234182B1 (en) 2007-12-28 2016-11-09 Nichia Corporation Semiconductor light emitting element and method for manufacturing the same
JP5150367B2 (ja) * 2008-05-27 2013-02-20 東芝ディスクリートテクノロジー株式会社 発光装置及びその製造方法
JP5687858B2 (ja) * 2010-07-30 2015-03-25 スタンレー電気株式会社 半導体発光装置
JP5736930B2 (ja) * 2011-04-19 2015-06-17 日亜化学工業株式会社 半導体発光素子
JP2013183032A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体発光素子
JP6287317B2 (ja) * 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
JP2014229648A (ja) * 2013-05-20 2014-12-08 シャープ株式会社 半導体発光素子
WO2015156123A1 (ja) * 2014-04-07 2015-10-15 旭化成イーマテリアルズ株式会社 光学基材及びその製造方法、並びに、積層体、レジスト剥離液
JP7354943B2 (ja) 2020-07-03 2023-10-03 信越半導体株式会社 接合型半導体受光素子及び接合型半導体受光素子の製造方法
JP7413941B2 (ja) * 2020-07-03 2024-01-16 信越半導体株式会社 接合型半導体素子及び接合型半導体素子の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818100A (ja) * 1994-06-24 1996-01-19 Showa Denko Kk 化合物半導体発光ダイオード
DE19943406C2 (de) 1999-09-10 2001-07-19 Osram Opto Semiconductors Gmbh Lichtemissionsdiode mit Oberflächenstrukturierung
US7102175B2 (en) * 2003-04-15 2006-09-05 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
JP2006049855A (ja) * 2004-06-28 2006-02-16 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP4371029B2 (ja) * 2004-09-29 2009-11-25 サンケン電気株式会社 半導体発光素子およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI424587B (zh) * 2008-06-30 2014-01-21 Luxtaltek Corp Light emitting diodes with nanoscale surface structure and embossing molds forming nanometer scale surface structures
CN103887418B (zh) * 2012-12-22 2017-06-30 赛恩倍吉科技顾问（深圳）有限公司 发光芯片组合

Also Published As

Publication number Publication date
TWI357162B (https=) 2012-01-21
KR100914110B1 (ko) 2009-08-27
JP2008066554A (ja) 2008-03-21
KR20080023116A (ko) 2008-03-12

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