TW200811916A - Cluster tool for advanced front-end processing - Google Patents
Cluster tool for advanced front-end processing Download PDFInfo
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- TW200811916A TW200811916A TW096124192A TW96124192A TW200811916A TW 200811916 A TW200811916 A TW 200811916A TW 096124192 A TW096124192 A TW 096124192A TW 96124192 A TW96124192 A TW 96124192A TW 200811916 A TW200811916 A TW 200811916A
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Classifications
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B08B7/0057—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like by ultraviolet radiation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US80651806P | 2006-07-03 | 2006-07-03 | |
| US11/460,864 US20070134821A1 (en) | 2004-11-22 | 2006-07-28 | Cluster tool for advanced front-end processing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200811916A true TW200811916A (en) | 2008-03-01 |
Family
ID=38895329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096124192A TW200811916A (en) | 2006-07-03 | 2007-07-03 | Cluster tool for advanced front-end processing |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2041774A2 (ja) |
| JP (1) | JP2009543355A (ja) |
| KR (1) | KR20090035578A (ja) |
| TW (1) | TW200811916A (ja) |
| WO (1) | WO2008005773A2 (ja) |
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| TWI482224B (zh) * | 2008-06-14 | 2015-04-21 | Applied Materials Inc | 半導體基板之表面處理方法 |
| TWI679694B (zh) * | 2015-10-28 | 2019-12-11 | 日商東京威力科創股份有限公司 | 基板處理方法、基板處理裝置、基板處理系統及記憶媒體 |
| TWI700750B (zh) * | 2017-01-24 | 2020-08-01 | 美商應用材料股份有限公司 | 用於介電薄膜的選擇性沉積之方法及設備 |
| CN111507076A (zh) * | 2019-01-29 | 2020-08-07 | 北京新唐思创教育科技有限公司 | 一种用于教学系统的共案课件制作方法、装置和终端 |
| TWI827326B (zh) * | 2021-10-29 | 2023-12-21 | 大陸商北京北方華創微電子裝備有限公司 | 半導體製程設備以及晶圓位置狀態的監測方法 |
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| US8999798B2 (en) | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
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| TWI525744B (zh) | 2011-05-31 | 2016-03-11 | 維克儀器公司 | 加熱之晶圓載體輪廓勘測 |
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| WO2014025918A1 (en) * | 2012-08-08 | 2014-02-13 | Applied Materials, Inc | Linked vacuum processing tools and methods of using the same |
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| US10697059B2 (en) | 2017-09-15 | 2020-06-30 | Lam Research Corporation | Thickness compensation by modulation of number of deposition cycles as a function of chamber accumulation for wafer to wafer film thickness matching |
| CN111033700A (zh) * | 2017-09-20 | 2020-04-17 | 株式会社国际电气 | 基板处理装置、半导体器件的制造方法及程序 |
| KR20200123480A (ko) * | 2018-03-20 | 2020-10-29 | 도쿄엘렉트론가부시키가이샤 | 통합형 반도체 공정 모듈을 포함하는 자기 인식 및 보정 이종 플랫폼, 및 이를 사용하기 위한 방법 |
| KR102655137B1 (ko) * | 2018-03-20 | 2024-04-04 | 도쿄엘렉트론가부시키가이샤 | 계측 통합형 기판 프로세싱 툴 및 그 이용 방법 |
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| JP2729310B2 (ja) * | 1988-05-12 | 1998-03-18 | 三菱電機株式会社 | 半導体基板表面に薄膜を形成する装置 |
| JP3107425B2 (ja) * | 1991-10-09 | 2000-11-06 | 三井化学株式会社 | 非晶質太陽電池 |
| JPH05275343A (ja) * | 1992-03-27 | 1993-10-22 | Toshiba Corp | 基板処理装置 |
| JP3297857B2 (ja) * | 1995-12-27 | 2002-07-02 | 東京エレクトロン株式会社 | クラスタツール装置 |
| US6015759A (en) * | 1997-12-08 | 2000-01-18 | Quester Technology, Inc. | Surface modification of semiconductors using electromagnetic radiation |
| US6081334A (en) * | 1998-04-17 | 2000-06-27 | Applied Materials, Inc | Endpoint detection for semiconductor processes |
| JP2002270596A (ja) * | 2001-03-12 | 2002-09-20 | Matsushita Electric Ind Co Ltd | 半導体装置の製造装置 |
| JP2003115578A (ja) * | 2001-10-05 | 2003-04-18 | Canon Inc | 不揮発固体磁気メモリ装置、該不揮発固体磁気メモリ装置の製造方法およびマルチ・チップ・パッケージ |
| US7431795B2 (en) * | 2004-07-29 | 2008-10-07 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacture of a gate structure of a field effect transistor |
-
2007
- 2007-06-27 EP EP07812383A patent/EP2041774A2/en not_active Withdrawn
- 2007-06-27 KR KR1020097002228A patent/KR20090035578A/ko not_active Application Discontinuation
- 2007-06-27 JP JP2009518542A patent/JP2009543355A/ja active Pending
- 2007-06-27 WO PCT/US2007/072264 patent/WO2008005773A2/en active Application Filing
- 2007-07-03 TW TW096124192A patent/TW200811916A/zh unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI482224B (zh) * | 2008-06-14 | 2015-04-21 | Applied Materials Inc | 半導體基板之表面處理方法 |
| TWI679694B (zh) * | 2015-10-28 | 2019-12-11 | 日商東京威力科創股份有限公司 | 基板處理方法、基板處理裝置、基板處理系統及記憶媒體 |
| TWI700750B (zh) * | 2017-01-24 | 2020-08-01 | 美商應用材料股份有限公司 | 用於介電薄膜的選擇性沉積之方法及設備 |
| CN111507076A (zh) * | 2019-01-29 | 2020-08-07 | 北京新唐思创教育科技有限公司 | 一种用于教学系统的共案课件制作方法、装置和终端 |
| CN111507076B (zh) * | 2019-01-29 | 2022-07-05 | 北京新唐思创教育科技有限公司 | 一种用于教学系统的共案课件制作方法、装置和终端 |
| TWI827326B (zh) * | 2021-10-29 | 2023-12-21 | 大陸商北京北方華創微電子裝備有限公司 | 半導體製程設備以及晶圓位置狀態的監測方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008005773A3 (en) | 2008-02-28 |
| KR20090035578A (ko) | 2009-04-09 |
| JP2009543355A (ja) | 2009-12-03 |
| WO2008005773A2 (en) | 2008-01-10 |
| EP2041774A2 (en) | 2009-04-01 |
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