TW200809008A - Etching process - Google Patents

Etching process Download PDF

Info

Publication number
TW200809008A
TW200809008A TW096112512A TW96112512A TW200809008A TW 200809008 A TW200809008 A TW 200809008A TW 096112512 A TW096112512 A TW 096112512A TW 96112512 A TW96112512 A TW 96112512A TW 200809008 A TW200809008 A TW 200809008A
Authority
TW
Taiwan
Prior art keywords
fluorine
nitrogen
mixture
argon
gas
Prior art date
Application number
TW096112512A
Other languages
English (en)
Chinese (zh)
Inventor
Anja Pischtiak
Thomas Schwarze
Michael Pittroff
Original Assignee
Solvay Fluor Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solvay Fluor Gmbh filed Critical Solvay Fluor Gmbh
Publication of TW200809008A publication Critical patent/TW200809008A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/04—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by physical dissolution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW096112512A 2006-04-10 2007-04-10 Etching process TW200809008A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP06007540 2006-04-10
EP06008238 2006-04-21

Publications (1)

Publication Number Publication Date
TW200809008A true TW200809008A (en) 2008-02-16

Family

ID=38164383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096112512A TW200809008A (en) 2006-04-10 2007-04-10 Etching process

Country Status (6)

Country Link
US (1) US20090068844A1 (https=)
EP (2) EP3269843A1 (https=)
JP (1) JP5491170B2 (https=)
KR (3) KR20160062181A (https=)
TW (1) TW200809008A (https=)
WO (1) WO2007116033A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI718148B (zh) * 2015-05-22 2021-02-11 比利時商首威公司 用於蝕刻和腔室清洗之方法以及用於該方法之氣體

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CN102292169A (zh) * 2009-01-27 2011-12-21 琳德股份公司 用于光伏和其它低温化学气相沉积工艺的硅薄膜的分子氟蚀刻
US9627180B2 (en) * 2009-10-01 2017-04-18 Praxair Technology, Inc. Method for ion source component cleaning
TW201123293A (en) * 2009-10-26 2011-07-01 Solvay Fluor Gmbh Etching process for producing a TFT matrix
KR20120104215A (ko) * 2009-10-30 2012-09-20 솔베이(소시에떼아노님) Ｆ₂ 및 ｃｏｆ₂를 사용한 플라즈마 식각 및 플라즈마 챔버 세정 방법
SG184131A1 (en) 2010-03-26 2012-10-30 Solvay Method for the supply of fluorine
GB2486883A (en) * 2010-12-22 2012-07-04 Ultra High Vacuum Solutions Ltd Method and apparatus for surface texture modification of silicon wafers for photovoltaic cell devices
SG187727A1 (en) 2010-08-05 2013-03-28 Solvay Method for the purification of fluorine
TWI586842B (zh) 2010-09-15 2017-06-11 首威公司 氟之製造工廠及使用彼之方法
WO2012035000A1 (en) 2010-09-15 2012-03-22 Solvay Sa Method for the removal of f2 and/or of2 from a gas
US20130017644A1 (en) * 2011-02-18 2013-01-17 Air Products And Chemicals, Inc. Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup
JP2012216718A (ja) * 2011-04-01 2012-11-08 Kaneka Corp Ｃｖｄ装置のクリーニング方法
WO2013024041A1 (en) 2011-08-17 2013-02-21 Solvay Sa Electrolytic process for the manufacture of fluorine and an apparatus therefor
WO2013092777A1 (en) 2011-12-22 2013-06-27 Solvay Sa Plasma chamber apparatus and a method for cleaning a chamber
KR102030797B1 (ko) 2012-03-30 2019-11-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판 제조 방법
JP6138653B2 (ja) * 2013-10-08 2017-05-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
EP2860288A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2860287A1 (en) 2013-10-11 2015-04-15 Solvay SA Improved electrolytic cell
EP2944385A1 (en) * 2014-05-12 2015-11-18 Solvay SA A process for etching and chamber cleaning and a gas therefor
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
EP4138115A4 (en) 2020-04-14 2023-11-15 Resonac Corporation Etching method and method for producing semiconductor elements
CN114097064B (zh) * 2020-06-25 2025-08-15 株式会社日立高新技术 真空处理方法
CN114823350A (zh) * 2022-04-17 2022-07-29 中南大学 一种铌酸锂薄膜刻蚀方法

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Publication number Priority date Publication date Assignee Title
TWI718148B (zh) * 2015-05-22 2021-02-11 比利時商首威公司 用於蝕刻和腔室清洗之方法以及用於該方法之氣體

Also Published As

Publication number Publication date
KR20090015054A (ko) 2009-02-11
EP2007923B1 (en) 2017-07-19
JP2009533853A (ja) 2009-09-17
JP5491170B2 (ja) 2014-05-14
EP2007923A1 (en) 2008-12-31
EP3269843A1 (en) 2018-01-17
US20090068844A1 (en) 2009-03-12
WO2007116033A1 (en) 2007-10-18
KR20170116213A (ko) 2017-10-18
KR20160062181A (ko) 2016-06-01

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