TW200802554A - A method of manufacturing a semiconductor device and device of processing substrate - Google Patents

A method of manufacturing a semiconductor device and device of processing substrate

Info

Publication number
TW200802554A
TW200802554A TW096110586A TW96110586A TW200802554A TW 200802554 A TW200802554 A TW 200802554A TW 096110586 A TW096110586 A TW 096110586A TW 96110586 A TW96110586 A TW 96110586A TW 200802554 A TW200802554 A TW 200802554A
Authority
TW
Taiwan
Prior art keywords
gas
film
supplying
process chamber
supplier
Prior art date
Application number
TW096110586A
Other languages
English (en)
Other versions
TWI397115B (zh
Inventor
Sadao Nakashima
Takahiro Maeda
Kiyohiko Maeda
Kenji Kameda
Yushin Takasawa
Original Assignee
Hitachi Int Electric Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Int Electric Inc filed Critical Hitachi Int Electric Inc
Publication of TW200802554A publication Critical patent/TW200802554A/zh
Application granted granted Critical
Publication of TWI397115B publication Critical patent/TWI397115B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
TW096110586A 2006-03-27 2007-03-27 半導體裝置的製造方法及基板處理裝置以及清潔方法 TWI397115B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006085047 2006-03-27

Publications (2)

Publication Number Publication Date
TW200802554A true TW200802554A (en) 2008-01-01
TWI397115B TWI397115B (zh) 2013-05-21

Family

ID=38581064

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096110586A TWI397115B (zh) 2006-03-27 2007-03-27 半導體裝置的製造方法及基板處理裝置以及清潔方法

Country Status (4)

Country Link
US (1) US8679989B2 (zh)
JP (1) JPWO2007116768A1 (zh)
TW (1) TWI397115B (zh)
WO (1) WO2007116768A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102732855A (zh) * 2011-03-29 2012-10-17 东京毅力科创株式会社 薄膜形成装置的清洗方法、薄膜形成方法及薄膜形成装置

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101077106B1 (ko) * 2006-08-11 2011-10-26 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
JP4464949B2 (ja) * 2006-11-10 2010-05-19 株式会社日立国際電気 基板処理装置及び選択エピタキシャル膜成長方法
KR20100071961A (ko) * 2007-09-19 2010-06-29 가부시키가이샤 히다치 고쿠사이 덴키 클리닝 방법 및 기판 처리 장치
US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
JP5665289B2 (ja) * 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5576101B2 (ja) 2008-12-25 2014-08-20 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5158068B2 (ja) * 2009-02-20 2013-03-06 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
JP2010287877A (ja) * 2009-05-11 2010-12-24 Hitachi Kokusai Electric Inc 熱処理装置および熱処理方法
JP5564311B2 (ja) * 2009-05-19 2014-07-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置及び基板の製造方法
JP5560093B2 (ja) * 2009-06-30 2014-07-23 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法及び基板製造方法
US8409352B2 (en) * 2010-03-01 2013-04-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus
US8895457B2 (en) * 2010-03-08 2014-11-25 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device and substrate processing apparatus
JP5751895B2 (ja) * 2010-06-08 2015-07-22 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
US20130153201A1 (en) * 2010-12-30 2013-06-20 Poole Ventura, Inc. Thermal diffusion chamber with cooling tubes
KR20130008203A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 반도체 에피 박막 성장방법 및 이를 이용한 반도체 발광소자 제조방법
WO2013146278A1 (ja) * 2012-03-30 2013-10-03 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
TWI476853B (zh) * 2012-09-13 2015-03-11 Motech Ind Inc 擴散機台
KR102050496B1 (ko) * 2013-02-21 2019-12-02 주성엔지니어링(주) 반도체 프로세싱 챔버의 세정방법
JP6035166B2 (ja) * 2013-02-26 2016-11-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2014142031A1 (ja) * 2013-03-13 2014-09-18 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、クリーニング方法及び半導体装置の製造方法並びに記録媒体
JP2014185363A (ja) * 2013-03-22 2014-10-02 Hitachi Kokusai Electric Inc 基板処理装置、処理容器および半導体装置の製造方法
JP6476369B2 (ja) 2013-03-25 2019-03-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置及びプログラム
JP6124724B2 (ja) * 2013-07-25 2017-05-10 株式会社日立国際電気 クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
JP5847783B2 (ja) * 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
JP5715717B2 (ja) * 2014-02-03 2015-05-13 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法および基板処理装置
KR102072531B1 (ko) 2016-06-10 2020-02-03 가부시키가이샤 코쿠사이 엘렉트릭 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
JP6956660B2 (ja) * 2018-03-19 2021-11-02 東京エレクトロン株式会社 クリーニング方法及び成膜装置
JP6826558B2 (ja) * 2018-06-04 2021-02-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
JP6860537B2 (ja) * 2018-09-25 2021-04-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クリーニング方法、半導体装置の製造方法、基板処理装置、およびプログラム
KR20230156719A (ko) * 2021-03-17 2023-11-14 가부시키가이샤 코쿠사이 엘렉트릭 클리닝 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
US5849092A (en) * 1997-02-25 1998-12-15 Applied Materials, Inc. Process for chlorine trifluoride chamber cleaning
JP3969859B2 (ja) 1998-08-26 2007-09-05 株式会社日立国際電気 基板処理装置及び半導体デバイスの製造方法
JP2000311860A (ja) 1999-04-27 2000-11-07 Sony Corp 縦型減圧ｃｖｄ装置におけるクリーニング方法及びクリーニング機構付き縦型減圧ｃｖｄ装置
JP2002280376A (ja) 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
KR100829327B1 (ko) * 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
US7449246B2 (en) 2004-06-30 2008-11-11 General Electric Company Barrier coatings
JP4260590B2 (ja) 2003-09-25 2009-04-30 東京エレクトロン株式会社 基板処理装置のクリーニング方法
JP4716664B2 (ja) 2004-03-29 2011-07-06 株式会社日立国際電気 半導体装置の製造方法、クリーニング方法及び基板処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102732855A (zh) * 2011-03-29 2012-10-17 东京毅力科创株式会社 薄膜形成装置的清洗方法、薄膜形成方法及薄膜形成装置

Also Published As

Publication number Publication date
US8679989B2 (en) 2014-03-25
JPWO2007116768A1 (ja) 2009-08-20
TWI397115B (zh) 2013-05-21
WO2007116768A1 (ja) 2007-10-18
US20090305517A1 (en) 2009-12-10

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