DE602006008369D1 - ALD-Verfahren zur Herstellung dünner Schichten - Google Patents

ALD-Verfahren zur Herstellung dünner Schichten

Info

Publication number
DE602006008369D1
DE602006008369D1 DE602006008369T DE602006008369T DE602006008369D1 DE 602006008369 D1 DE602006008369 D1 DE 602006008369D1 DE 602006008369 T DE602006008369 T DE 602006008369T DE 602006008369 T DE602006008369 T DE 602006008369T DE 602006008369 D1 DE602006008369 D1 DE 602006008369D1
Authority
DE
Germany
Prior art keywords
reaction gas
feeding
substrate
impulse
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006008369T
Other languages
English (en)
Inventor
Young Hoon Park
Sahng Kyu Lee
Ki Hoon Lee
Tae Wook Seo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IPS Ltd
Original Assignee
IPS Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IPS Ltd filed Critical IPS Ltd
Publication of DE602006008369D1 publication Critical patent/DE602006008369D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
DE602006008369T 2005-03-16 2006-03-14 ALD-Verfahren zur Herstellung dünner Schichten Active DE602006008369D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050021875A KR100597322B1 (ko) 2005-03-16 2005-03-16 박막증착방법

Publications (1)

Publication Number Publication Date
DE602006008369D1 true DE602006008369D1 (de) 2009-09-24

Family

ID=36616923

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006008369T Active DE602006008369D1 (de) 2005-03-16 2006-03-14 ALD-Verfahren zur Herstellung dünner Schichten

Country Status (8)

Country Link
US (1) US20060210712A1 (de)
EP (1) EP1702999B1 (de)
JP (1) JP2006257554A (de)
KR (1) KR100597322B1 (de)
CN (1) CN100569998C (de)
AT (1) ATE439458T1 (de)
DE (1) DE602006008369D1 (de)
TW (1) TWI298916B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101544198B1 (ko) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
JP5087657B2 (ja) * 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5385439B2 (ja) * 2009-08-04 2014-01-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5610438B2 (ja) * 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
CN102703880B (zh) * 2012-06-12 2014-01-15 浙江大学 利用原子层沉积制备高精度光学宽带抗反射多层膜的方法
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN103325769A (zh) * 2013-06-15 2013-09-25 复旦大学 一种铜互连结构及其制备方法
JP6706903B2 (ja) * 2015-01-30 2020-06-10 東京エレクトロン株式会社 タングステン膜の成膜方法
CN105506581B (zh) * 2015-12-15 2019-03-19 北京北方华创微电子装备有限公司 一种应用原子层沉积技术制备薄膜的实现方法
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
KR102514043B1 (ko) 2016-07-18 2023-03-24 삼성전자주식회사 반도체 소자의 제조 방법
CN108546929B (zh) * 2018-03-30 2020-07-14 西安空间无线电技术研究所 一种在基片表面制备氮化钛纳米薄膜的方法、具有薄膜的基片及其应用
JP2020026571A (ja) * 2018-08-17 2020-02-20 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743938C2 (de) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100363088B1 (ko) * 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
JP4528413B2 (ja) 2000-04-25 2010-08-18 日鉱金属株式会社 気相成長方法
JP4511006B2 (ja) * 2000-09-01 2010-07-28 独立行政法人理化学研究所 半導体の不純物ドーピング方法
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
KR100519376B1 (ko) * 2001-06-12 2005-10-07 주식회사 하이닉스반도체 반도체 소자의 확산 방지막 형성 방법
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
KR100520902B1 (ko) * 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
JP4168775B2 (ja) * 2003-02-12 2008-10-22 株式会社デンソー 薄膜の製造方法
KR100521380B1 (ko) * 2003-05-29 2005-10-12 삼성전자주식회사 박막 증착 방법
KR100527048B1 (ko) * 2003-08-29 2005-11-09 주식회사 아이피에스 박막증착방법
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer

Also Published As

Publication number Publication date
EP1702999A1 (de) 2006-09-20
KR100597322B1 (ko) 2006-07-06
TW200634962A (en) 2006-10-01
ATE439458T1 (de) 2009-08-15
CN1834289A (zh) 2006-09-20
EP1702999B1 (de) 2009-08-12
TWI298916B (en) 2008-07-11
JP2006257554A (ja) 2006-09-28
US20060210712A1 (en) 2006-09-21
CN100569998C (zh) 2009-12-16

Similar Documents

Publication Publication Date Title
DE602006008369D1 (de) ALD-Verfahren zur Herstellung dünner Schichten
WO2004083485A3 (en) Methods and apparatus for atomic layer deposition
TW200721307A (en) Method and apparatus for forming silicon-containing insulating film
TW200717611A (en) Film formation method and apparatus for semiconductor process
WO2003065424A3 (en) Apparatus for cyclical deposition of thin films
WO2005124859A3 (en) Methods and apparatuses for depositing uniform layers
TW200732501A (en) High temperature ALD inlet manifold
TW200609378A (en) Device and method for high-throughput chemical vapor deposition
TW200625443A (en) Film formation apparatus and method for semiconductor process
TW200643213A (en) Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same
WO2012136876A8 (en) Atomic layer deposition with plasma source
TW200609377A (en) Method for depositing thin film and thin film deposition system having separate jet orifices for spraying purge gas
TW200709279A (en) Method of depositing Ge-Sb-Te thin film
TW200628629A (en) Method for increasing deposition rates of metal layers from metal-carbonyl precursors
JP2010515821A5 (de)
TW200617199A (en) A method for depositing thin film using ALD
KR20230032000A (ko) Ald 코팅에 의한 목표 펌프의 내부 보호
WO2010045153A3 (en) Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (pecvd)
WO2003028069A3 (en) Method for cyclic cvd
TW200508413A (en) Device and method for manufacturing thin films
TW200520099A (en) Method of forming a metal layer using an intermittent precursor gas flow process
TW200741823A (en) Semiconductor device manufacturing method and substrate processing apparatus
TW200802554A (en) A method of manufacturing a semiconductor device and device of processing substrate
TW200802604A (en) Sequential deposition process for forming si-containing films
TW200600606A (en) Wafer treatment device and the manufacturing method of semiconductor device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 1702999

Country of ref document: EP

Representative=s name: HOFFMANN - EITLE, 81925 MUENCHEN, DE