ATE439458T1 - Ald-verfahren zur herstellung dünner schichten - Google Patents

Ald-verfahren zur herstellung dünner schichten

Info

Publication number
ATE439458T1
ATE439458T1 AT06005161T AT06005161T ATE439458T1 AT E439458 T1 ATE439458 T1 AT E439458T1 AT 06005161 T AT06005161 T AT 06005161T AT 06005161 T AT06005161 T AT 06005161T AT E439458 T1 ATE439458 T1 AT E439458T1
Authority
AT
Austria
Prior art keywords
reaction gas
feeding
substrate
impulse
thin layers
Prior art date
Application number
AT06005161T
Other languages
English (en)
Inventor
Young Hoon Park
Sahng Kyu Lee
Ki Hoon Lee
Tae Wook Seo
Original Assignee
Ips Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ips Ltd filed Critical Ips Ltd
Application granted granted Critical
Publication of ATE439458T1 publication Critical patent/ATE439458T1/de

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
AT06005161T 2005-03-16 2006-03-14 Ald-verfahren zur herstellung dünner schichten ATE439458T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050021875A KR100597322B1 (ko) 2005-03-16 2005-03-16 박막증착방법

Publications (1)

Publication Number Publication Date
ATE439458T1 true ATE439458T1 (de) 2009-08-15

Family

ID=36616923

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06005161T ATE439458T1 (de) 2005-03-16 2006-03-14 Ald-verfahren zur herstellung dünner schichten

Country Status (8)

Country Link
US (1) US20060210712A1 (de)
EP (1) EP1702999B1 (de)
JP (1) JP2006257554A (de)
KR (1) KR100597322B1 (de)
CN (1) CN100569998C (de)
AT (1) ATE439458T1 (de)
DE (1) DE602006008369D1 (de)
TW (1) TWI298916B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101544198B1 (ko) * 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
JP5385439B2 (ja) * 2009-08-04 2014-01-08 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5087657B2 (ja) 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5610438B2 (ja) * 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
CN102703880B (zh) * 2012-06-12 2014-01-15 浙江大学 利用原子层沉积制备高精度光学宽带抗反射多层膜的方法
JP6245643B2 (ja) * 2013-03-28 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN103325769A (zh) * 2013-06-15 2013-09-25 复旦大学 一种铜互连结构及其制备方法
JP6706903B2 (ja) * 2015-01-30 2020-06-10 東京エレクトロン株式会社 タングステン膜の成膜方法
CN105506581B (zh) * 2015-12-15 2019-03-19 北京北方华创微电子装备有限公司 一种应用原子层沉积技术制备薄膜的实现方法
CN106086809B (zh) * 2016-06-17 2018-08-17 艾因斯（北京）钽应用科技有限公司 一种制备耐腐耐磨钽复合涂层的方法
KR102514043B1 (ko) 2016-07-18 2023-03-24 삼성전자주식회사 반도체 소자의 제조 방법
CN108546929B (zh) * 2018-03-30 2020-07-14 西安空间无线电技术研究所 一种在基片表面制备氮化钛纳米薄膜的方法、具有薄膜的基片及其应用
JP2020026571A (ja) * 2018-08-17 2020-02-20 東京エレクトロン株式会社 成膜方法及び成膜装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743938C2 (de) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100363088B1 (ko) * 2000-04-20 2002-12-02 삼성전자 주식회사 원자층 증착방법을 이용한 장벽 금속막의 제조방법
JP4528413B2 (ja) 2000-04-25 2010-08-18 日鉱金属株式会社 気相成長方法
JP4511006B2 (ja) * 2000-09-01 2010-07-28 独立行政法人理化学研究所 半導体の不純物ドーピング方法
US7378127B2 (en) * 2001-03-13 2008-05-27 Micron Technology, Inc. Chemical vapor deposition methods
KR100519376B1 (ko) * 2001-06-12 2005-10-07 주식회사 하이닉스반도체 반도체 소자의 확산 방지막 형성 방법
JP4178776B2 (ja) * 2001-09-03 2008-11-12 東京エレクトロン株式会社 成膜方法
KR100520902B1 (ko) * 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
JP4168775B2 (ja) * 2003-02-12 2008-10-22 株式会社デンソー 薄膜の製造方法
KR100521380B1 (ko) * 2003-05-29 2005-10-12 삼성전자주식회사 박막 증착 방법
KR100527048B1 (ko) * 2003-08-29 2005-11-09 주식회사 아이피에스 박막증착방법
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer

Also Published As

Publication number Publication date
DE602006008369D1 (de) 2009-09-24
EP1702999A1 (de) 2006-09-20
EP1702999B1 (de) 2009-08-12
KR100597322B1 (ko) 2006-07-06
TW200634962A (en) 2006-10-01
CN100569998C (zh) 2009-12-16
TWI298916B (en) 2008-07-11
US20060210712A1 (en) 2006-09-21
CN1834289A (zh) 2006-09-20
JP2006257554A (ja) 2006-09-28

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