TW200746483A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW200746483A
TW200746483A TW096102629A TW96102629A TW200746483A TW 200746483 A TW200746483 A TW 200746483A TW 096102629 A TW096102629 A TW 096102629A TW 96102629 A TW96102629 A TW 96102629A TW 200746483 A TW200746483 A TW 200746483A
Authority
TW
Taiwan
Prior art keywords
memory cells
bit lines
cell
along
row
Prior art date
Application number
TW096102629A
Other languages
English (en)
Other versions
TWI340486B (en
Inventor
Yukio Fuji
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Publication of TW200746483A publication Critical patent/TW200746483A/zh
Application granted granted Critical
Publication of TWI340486B publication Critical patent/TWI340486B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/008—Write by generating heat in the surroundings of the memory material, e.g. thermowrite
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
TW096102629A 2006-01-25 2007-01-24 Semiconductor memory device TWI340486B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006016484A JP2007201081A (ja) 2006-01-25 2006-01-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW200746483A true TW200746483A (en) 2007-12-16
TWI340486B TWI340486B (en) 2011-04-11

Family

ID=38285372

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096102629A TWI340486B (en) 2006-01-25 2007-01-24 Semiconductor memory device

Country Status (4)

Country Link
US (1) US7532508B2 (zh)
JP (1) JP2007201081A (zh)
CN (1) CN101009136A (zh)
TW (1) TWI340486B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394273B (zh) * 2008-07-16 2013-04-21 United Microelectronics Corp 相變化記憶體

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4157571B2 (ja) * 2006-05-24 2008-10-01 株式会社東芝 スピン注入磁気ランダムアクセスメモリ
US7817454B2 (en) 2007-04-03 2010-10-19 Micron Technology, Inc. Variable resistance memory with lattice array using enclosing transistors
JP2009010264A (ja) * 2007-06-29 2009-01-15 Toshiba Corp 抵抗変化メモリ装置及び集積回路装置
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
KR100960461B1 (ko) 2008-04-18 2010-05-28 주식회사 하이닉스반도체 상 변화 메모리 장치 및 그 형성 방법
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
US8134137B2 (en) 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
CN100570747C (zh) * 2008-08-05 2009-12-16 中国科学院上海微系统与信息技术研究所 相变存储器
US8130534B2 (en) * 2009-01-08 2012-03-06 Qualcomm Incorporated System and method to read and write data a magnetic tunnel junction element
JP5502635B2 (ja) * 2010-03-08 2014-05-28 株式会社東芝 半導体記憶装置
US20110261613A1 (en) * 2010-04-27 2011-10-27 Mosaid Technologies Incorporated Phase change memory array blocks with alternate selection
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US9454997B2 (en) * 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
CN103093815A (zh) * 2013-01-10 2013-05-08 华中科技大学 一种多值相变随机存储器的存储单元及操作方法
WO2014181492A1 (ja) * 2013-05-09 2014-11-13 日本電気株式会社 半導体装置およびその製造方法
US20160260481A1 (en) * 2013-10-25 2016-09-08 Hitachi, Ltd. Semiconductor Device
TWI581264B (zh) * 2014-05-07 2017-05-01 旺宏電子股份有限公司 電阻式記憶體及其操作方法
JP6829125B2 (ja) 2017-03-23 2021-02-10 キオクシア株式会社 半導体記憶装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4322481B2 (ja) * 2002-08-12 2009-09-02 株式会社東芝 半導体集積回路装置
JP4190238B2 (ja) * 2002-09-13 2008-12-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP4350459B2 (ja) * 2003-08-26 2009-10-21 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP2005150243A (ja) 2003-11-12 2005-06-09 Toshiba Corp 相転移メモリ
US7372726B2 (en) * 2004-04-08 2008-05-13 Renesas Technology Corp. Semiconductor memory
US7307268B2 (en) * 2005-01-19 2007-12-11 Sandisk Corporation Structure and method for biasing phase change memory array for reliable writing
KR100714475B1 (ko) * 2006-01-11 2007-05-04 삼성전자주식회사 상변화 메모리 장치
US7515455B2 (en) * 2006-03-17 2009-04-07 Qimonda North America Corp. High density memory array for low power application
US7440316B1 (en) * 2007-04-30 2008-10-21 Super Talent Electronics, Inc 8/9 and 8/10-bit encoding to reduce peak surge currents when writing phase-change memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI394273B (zh) * 2008-07-16 2013-04-21 United Microelectronics Corp 相變化記憶體

Also Published As

Publication number Publication date
JP2007201081A (ja) 2007-08-09
US20070171706A1 (en) 2007-07-26
CN101009136A (zh) 2007-08-01
TWI340486B (en) 2011-04-11
US7532508B2 (en) 2009-05-12

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