TW200745764A - Coating compositions for photolithography - Google Patents

Coating compositions for photolithography

Info

Publication number
TW200745764A
TW200745764A TW096112655A TW96112655A TW200745764A TW 200745764 A TW200745764 A TW 200745764A TW 096112655 A TW096112655 A TW 096112655A TW 96112655 A TW96112655 A TW 96112655A TW 200745764 A TW200745764 A TW 200745764A
Authority
TW
Taiwan
Prior art keywords
composition
applying
photolithography
coating compositions
organic
Prior art date
Application number
TW096112655A
Other languages
English (en)
Other versions
TWI427421B (zh
Inventor
Michael K Gallagher
Anthony Zampini
Owendi Ongayi
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200745764A publication Critical patent/TW200745764A/zh
Application granted granted Critical
Publication of TWI427421B publication Critical patent/TWI427421B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F10/00Homopolymers and copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40Additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • G03F7/32Liquid compositions therefor, e.g. developers
    • G03F7/322Aqueous alkaline compositions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/38Treatment before imagewise removal, e.g. prebaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0275Photolithographic processes using lasers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • H01L21/0276Photolithographic processes using an anti-reflective coating
TW96112655A 2006-04-11 2007-04-11 用於光微影技術之塗佈組成物 TWI427421B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79154706P 2006-04-11 2006-04-11

Publications (2)

Publication Number Publication Date
TW200745764A true TW200745764A (en) 2007-12-16
TWI427421B TWI427421B (zh) 2014-02-21

Family

ID=38197709

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96112655A TWI427421B (zh) 2006-04-11 2007-04-11 用於光微影技術之塗佈組成物

Country Status (6)

Country Link
US (3) US9323154B2 (zh)
EP (1) EP1845416A3 (zh)
JP (2) JP5112733B2 (zh)
KR (2) KR20070101174A (zh)
CN (4) CN103728840A (zh)
TW (1) TWI427421B (zh)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5112733B2 (ja) * 2006-04-11 2013-01-09 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトリソグラフィ用コーティング組成物
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
US8017296B2 (en) 2007-05-22 2011-09-13 Az Electronic Materials Usa Corp. Antireflective coating composition comprising fused aromatic rings
KR101211325B1 (ko) * 2007-10-30 2012-12-12 브레우어 사이언스 인코포레이션 광화상형성가능한 측쇄 폴리머
JP4786636B2 (ja) * 2007-12-26 2011-10-05 Azエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法
US8133659B2 (en) 2008-01-29 2012-03-13 Brewer Science Inc. On-track process for patterning hardmask by multiple dark field exposures
US7989144B2 (en) 2008-04-01 2011-08-02 Az Electronic Materials Usa Corp Antireflective coating composition
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
WO2010096615A2 (en) * 2009-02-19 2010-08-26 Brewer Science Inc. Acid-sensitive, developer-soluble bottom anti-reflective coatings
US8486609B2 (en) 2009-12-23 2013-07-16 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
EP2383611A3 (en) * 2010-04-27 2012-01-25 Rohm and Haas Electronic Materials LLC Photoacid generators and photoresists comprising same
JP6041104B2 (ja) * 2011-07-07 2016-12-07 日産化学工業株式会社 脂環式骨格含有カルバゾール樹脂を含むレジスト下層膜形成組成物
US9366964B2 (en) 2011-09-21 2016-06-14 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
US9011591B2 (en) 2011-09-21 2015-04-21 Dow Global Technologies Llc Compositions and antireflective coatings for photolithography
JP5894762B2 (ja) 2011-10-27 2016-03-30 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
US9070548B2 (en) 2012-03-06 2015-06-30 Rohm And Haas Electronic Materials Llc Metal hardmask compositions
JP6448903B2 (ja) * 2012-12-31 2019-01-09 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC イオン注入法
JP6493683B2 (ja) 2013-12-19 2019-04-03 日産化学株式会社 ラクトン構造含有ポリマーを含む電子線レジスト下層膜形成組成物
US10082734B2 (en) * 2015-02-13 2018-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Composition and method for lithography patterning
US10203602B2 (en) 2016-09-30 2019-02-12 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
US11567408B2 (en) * 2019-10-15 2023-01-31 Rohm And Haas Electronic Materials Korea Ltd. Coating composition for use with an overcoated photoresist

Family Cites Families (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1161571A (zh) * 1995-12-04 1997-10-08 日本电气株式会社 带抗反射层的绝缘层的制造方法
KR100199439B1 (ko) * 1997-05-15 1999-06-15 이의상 Uv반응성 고분자바인더를 함유하는 액상 광중합성 솔더마스크 조성물
JPH1172925A (ja) * 1997-07-03 1999-03-16 Toshiba Corp 下層膜用組成物およびこれを用いたパターン形成方法
CN1182440C (zh) * 1997-09-30 2004-12-29 西门子公司 用于深紫外线光刻的层状结构以及形成光刻层状结构的方法
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
DE69923267T2 (de) * 1998-09-09 2006-03-30 Rohm And Haas Co. Verbesserte MBS schlagzähe Modifiziermittel
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
CN1134497C (zh) * 1999-12-24 2004-01-14 中国科学院上海原子核研究所 辐射交联150℃阻燃的聚烯烃热收缩材料
US20010006267A1 (en) * 1999-12-27 2001-07-05 Nobuyuki Harada Production processes for basic water-absorbent resin and water-absorbing agent, and use thereof
CN1137932C (zh) * 2000-04-07 2004-02-11 中国科学院上海原子核研究所 辐射交联低烟无卤阻燃低温收缩聚烯烃热收缩材料
US6420088B1 (en) * 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6927266B2 (en) * 2001-02-22 2005-08-09 Nissan Chemical Industries, Ltd. Bottom anti-reflective coat forming composition for lithography
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
US6844131B2 (en) * 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US7455955B2 (en) * 2002-02-27 2008-11-25 Brewer Science Inc. Planarization method for multi-layer lithography processing
EP2216368B8 (en) * 2002-05-20 2012-05-16 Mitsui Chemicals, Inc. Resin composition for sealant, laminate, and container obtained therefrom
CN1208690C (zh) * 2002-08-02 2005-06-29 联华电子股份有限公司 应用多层光致抗蚀剂层结构的光刻工艺
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
KR20040044369A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
JP3914490B2 (ja) * 2002-11-27 2007-05-16 東京応化工業株式会社 リソグラフィー用下層膜形成材料およびこれを用いた配線形成方法
US7238462B2 (en) * 2002-11-27 2007-07-03 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for wiring, embedded material, and wiring formation method
KR100882409B1 (ko) * 2003-06-03 2009-02-05 신에쓰 가가꾸 고교 가부시끼가이샤 반사 방지용 실리콘 수지, 반사 방지막 재료, 이것을 이용한 반사 방지막 및 패턴 형성 방법
CN1200010C (zh) * 2003-06-18 2005-05-04 中国石油化工股份有限公司 用茂金属自由基聚合催化剂制备乙烯基单体聚合物的方法
JP4173414B2 (ja) * 2003-08-28 2008-10-29 東京応化工業株式会社 反射防止膜形成用組成物およびレジストパターンの形成方法
JP4355943B2 (ja) * 2003-10-03 2009-11-04 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
US7303855B2 (en) * 2003-10-03 2007-12-04 Shin-Etsu Chemical Co., Ltd. Photoresist undercoat-forming material and patterning process
US7270931B2 (en) * 2003-10-06 2007-09-18 International Business Machines Corporation Silicon-containing compositions for spin-on ARC/hardmask materials
US20050077629A1 (en) * 2003-10-14 2005-04-14 International Business Machines Corporation Photoresist ash process with reduced inter-level dielectric ( ILD) damage
WO2005064403A1 (ja) * 2003-12-26 2005-07-14 Nissan Chemical Industries, Ltd. ハードマスク用塗布型窒化膜形成組成物
JP4769455B2 (ja) * 2003-12-30 2011-09-07 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. コーティング組成物
KR20070029157A (ko) * 2004-03-12 2007-03-13 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 리소그래피 적용을 위한 열경화된 언더코트
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
WO2005097883A2 (en) * 2004-03-26 2005-10-20 King Industries, Inc. Method of producing a crosslinked coating in the manufacture of integrated circuits
CN102981368B (zh) * 2004-05-14 2015-03-04 日产化学工业株式会社 含有乙烯基醚化合物的形成防反射膜的组合物
JP4738054B2 (ja) * 2004-05-18 2011-08-03 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. オーバーコートされるフォトレジストと共に使用するコーティング組成物
JP4448381B2 (ja) * 2004-05-26 2010-04-07 東京応化工業株式会社 感光性組成物
US7781141B2 (en) * 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
JP4433933B2 (ja) * 2004-08-13 2010-03-17 Jsr株式会社 感放射線性組成物およびハードマスク形成材料
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
EP1705519B1 (en) 2005-03-20 2016-07-06 Rohm and Haas Electronic Materials, L.L.C. Method of treating a microelectronic substrate
EP1762895B1 (en) * 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflective Hard Mask Compositions
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
KR100703007B1 (ko) * 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
US7919222B2 (en) * 2006-01-29 2011-04-05 Rohm And Haas Electronics Materials Llc Coating compositions for use with an overcoated photoresist
EP1829942B1 (en) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
JP5112733B2 (ja) * 2006-04-11 2013-01-09 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. フォトリソグラフィ用コーティング組成物
US8455178B2 (en) 2006-09-26 2013-06-04 Rohm And Haas Electronic Materials Llp Coating compositions for photolithography
US7932018B2 (en) * 2008-05-06 2011-04-26 Az Electronic Materials Usa Corp. Antireflective coating composition
EP2472329B1 (en) 2010-12-31 2013-06-05 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist

Also Published As

Publication number Publication date
CN103728840A (zh) 2014-04-16
JP5406326B2 (ja) 2014-02-05
TWI427421B (zh) 2014-02-21
US20070238052A1 (en) 2007-10-11
EP1845416A3 (en) 2009-05-20
US20170285478A1 (en) 2017-10-05
EP1845416A2 (en) 2007-10-17
JP5112733B2 (ja) 2013-01-09
KR20070101174A (ko) 2007-10-16
US10754249B2 (en) 2020-08-25
KR101597126B1 (ko) 2016-02-24
CN101063819A (zh) 2007-10-31
CN102402121B (zh) 2013-06-12
JP2012128455A (ja) 2012-07-05
KR20140034890A (ko) 2014-03-20
JP2007293332A (ja) 2007-11-08
US9323154B2 (en) 2016-04-26
US9690199B2 (en) 2017-06-27
CN110488571A (zh) 2019-11-22
US20160223911A1 (en) 2016-08-04
CN102402121A (zh) 2012-04-04

Similar Documents

Publication Publication Date Title
TW200745764A (en) Coating compositions for photolithography
TW201129872A (en) Pattern forming method and composition for forming resist underlayer film
BRPI0512542A (pt) dispositivo para efetuar uma cura de revestimentos em um substrato sob uma atmosfera de gás inerte, processos para efetuar uma cura de revestimentos e de materiais de revestimento em um substrato sob uma atmosfera de gás inerte, e, uso de um dispositivo
TW200643613A (en) Pattern replication with intermediate stamp
TW200746441A (en) Manufacturing method of thin film transistor and thin film transistor, and display
WO2010018430A8 (en) A hardmask process for forming a reverse tone image
TW200707083A (en) Method for forming a lithograohy pattern
TW200710580A (en) Resist underlayer coating forming composition for forming photocrosslinking curable resist underlayer coating
WO2011090262A3 (ko) 경사 증착을 이용한 리소그래피 방법
TW200641075A (en) Film, silica film and method of forming the same, composition for forming silica film, and electronic part
GB2434687B (en) Thin film transistor array substrate system and method for manufacturing
WO2007035071A8 (en) Apparatus and method for treating substrate
TW200613920A (en) Coating compositions for use with an overcoated photoresist
TW200643064A (en) Transparent film and method for manufacturing the same, polarized plate and image display device
WO2006037300A3 (de) Verfahren zum herstellen einer schicht aus einem dotierten halbleitermaterial
TW200709276A (en) A system and method for lithography in semiconductor manufacturing
TW200627510A (en) A method and a system for producing a pattern on a substrate
WO2010047769A8 (en) Reduction of stress during template separation from substrate
TW200632559A (en) Positive dry film photoresist and composition for preparing the same
TW200741352A (en) Coating compositions for use with an overcoated photoresist
WO2008105266A1 (ja) 電子線リソグラフィー用レジスト下層膜形成組成物
TW200801815A (en) Method for forming pattern and composition for forming organic thin film using therefor
WO2008120785A1 (ja) 露光装置及び露光方法
EP2385426A3 (en) Maskless exposure apparatus and method of alignment for overlay in maskless exposure
ATE395985T1 (de) Beschichtungsverfahren und beschichtungsmittel