TW200745359A - Film-forming apparatus using sheet plasma - Google Patents

Film-forming apparatus using sheet plasma

Info

Publication number
TW200745359A
TW200745359A TW095144605A TW95144605A TW200745359A TW 200745359 A TW200745359 A TW 200745359A TW 095144605 A TW095144605 A TW 095144605A TW 95144605 A TW95144605 A TW 95144605A TW 200745359 A TW200745359 A TW 200745359A
Authority
TW
Taiwan
Prior art keywords
film
plasma
magnetic field
sheet
space
Prior art date
Application number
TW095144605A
Other languages
English (en)
Inventor
Masao Marunaka
Takayuki Tsuchiya
Atsuhiro Terakura
Kiyoshi Takeuchi
Original Assignee
Shinmaywa Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinmaywa Ind Ltd filed Critical Shinmaywa Ind Ltd
Publication of TW200745359A publication Critical patent/TW200745359A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
TW095144605A 2005-12-06 2006-12-01 Film-forming apparatus using sheet plasma TW200745359A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005351576A JP4906331B2 (ja) 2005-12-06 2005-12-06 シートプラズマ成膜装置

Publications (1)

Publication Number Publication Date
TW200745359A true TW200745359A (en) 2007-12-16

Family

ID=38122696

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095144605A TW200745359A (en) 2005-12-06 2006-12-01 Film-forming apparatus using sheet plasma

Country Status (7)

Country Link
US (1) US20090314206A1 (zh)
EP (1) EP1972700A4 (zh)
JP (1) JP4906331B2 (zh)
KR (1) KR20080056767A (zh)
CN (1) CN101321889A (zh)
TW (1) TW200745359A (zh)
WO (1) WO2007066548A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4963992B2 (ja) * 2007-03-15 2012-06-27 スタンレー電気株式会社 プラズマ処理装置
JP4934830B2 (ja) * 2007-11-08 2012-05-23 スタンレー電気株式会社 プラズマ処理装置
JP4860594B2 (ja) * 2007-11-28 2012-01-25 新明和工業株式会社 スパッタリング装置
JP5231962B2 (ja) * 2008-12-08 2013-07-10 新明和工業株式会社 シートプラズマ成膜装置
JP5498739B2 (ja) * 2009-08-21 2014-05-21 新明和工業株式会社 スパッタリング装置およびスパッタリング方法
JP5374288B2 (ja) * 2009-09-15 2013-12-25 新明和工業株式会社 スパッタリング方法
EP2550379A4 (en) * 2010-03-22 2014-02-26 Applied Materials Inc DIELECTRIC DEPOSITION USING A REMOTE PLASMA SOURCE
JP5700695B2 (ja) * 2012-04-12 2015-04-15 中外炉工業株式会社 プラズマ発生装置および蒸着装置並びにプラズマ発生方法
CN102781157B (zh) * 2012-07-17 2014-12-17 西安电子科技大学 平面射流等离子体产生装置
CN103052249A (zh) * 2013-01-11 2013-04-17 哈尔滨工业大学 一种射流等离子体密度分布调节器
JP6188224B2 (ja) * 2013-12-27 2017-08-30 昭和電工株式会社 炭素膜の形成装置、炭素膜の形成方法、及び、磁気記録媒体の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927499A (ja) * 1982-04-12 1984-02-13 浦本　上進 簡単で高能率なシ−トプラズマの生成法
JPS61257471A (ja) * 1985-05-08 1986-11-14 Joshin Uramoto 効率的に放電プラズマ流を曲げたイオンプレ−テング装置
DE3880135T2 (de) * 1988-09-08 1993-09-16 Asahi Glass Co Ltd Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens.
JP3095614B2 (ja) * 1993-04-30 2000-10-10 株式会社東芝 半導体ウェハ等の被処理体をプラズマ処理するに際して使用されるプラズマ処理装置及びプラズマ処理方法
US20020148941A1 (en) * 1994-02-17 2002-10-17 Boris Sorokov Sputtering method and apparatus for depositing a coating onto substrate
JPH07310186A (ja) * 1994-05-17 1995-11-28 Nikon Corp プラズマｃｖｄ法および装置
JPH0978230A (ja) * 1995-09-19 1997-03-25 Chugai Ro Co Ltd シート状プラズマ発生装置
EP1485516B1 (en) * 2002-02-27 2011-08-24 Philippine Council For Advanced Sc. And Techn. Res. And Dev. Method for formation of titanium nitride films
JP2003264098A (ja) * 2002-03-08 2003-09-19 Sumitomo Heavy Ind Ltd シートプラズマ処理装置
JP2005179767A (ja) * 2003-12-22 2005-07-07 Joshin Uramoto スパタイオンプレ−テング装置
WO2007066606A1 (ja) * 2005-12-06 2007-06-14 Shinmaywa Industries, Ltd. プラズマ成膜装置

Also Published As

Publication number Publication date
CN101321889A (zh) 2008-12-10
EP1972700A1 (en) 2008-09-24
KR20080056767A (ko) 2008-06-23
US20090314206A1 (en) 2009-12-24
JP2007154265A (ja) 2007-06-21
JP4906331B2 (ja) 2012-03-28
EP1972700A4 (en) 2009-12-09
WO2007066548A1 (ja) 2007-06-14

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