DE3880135T2 - Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens. - Google Patents

Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens.

Info

Publication number
DE3880135T2
DE3880135T2 DE8888114691T DE3880135T DE3880135T2 DE 3880135 T2 DE3880135 T2 DE 3880135T2 DE 8888114691 T DE8888114691 T DE 8888114691T DE 3880135 T DE3880135 T DE 3880135T DE 3880135 T2 DE3880135 T2 DE 3880135T2
Authority
DE
Germany
Prior art keywords
handling
band
plasma flow
shaped plasma
spraying method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888114691T
Other languages
English (en)
Other versions
DE3880135D1 (de
Inventor
Joshin Uramoto
Koichi Suzuki
Takuji Oyama
Hiroyasu Kojima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of DE3880135D1 publication Critical patent/DE3880135D1/de
Application granted granted Critical
Publication of DE3880135T2 publication Critical patent/DE3880135T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/48—Generating plasma using an arc
    • H05H1/50—Generating plasma using an arc and using applied magnetic fields, e.g. for focusing or rotating the arc

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE8888114691T 1988-09-08 1988-09-08 Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens. Expired - Fee Related DE3880135T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88114691A EP0357824B1 (de) 1988-09-08 1988-09-08 Zerstäubungsverfahren mittels eines bandförmigen Plasmaflusses und Gerät zur Handhabung dieses Verfahrens

Publications (2)

Publication Number Publication Date
DE3880135D1 DE3880135D1 (de) 1993-05-13
DE3880135T2 true DE3880135T2 (de) 1993-09-16

Family

ID=8199285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888114691T Expired - Fee Related DE3880135T2 (de) 1988-09-08 1988-09-08 Zerstaeubungsverfahren mittels eines bandfoermigen plasmaflusses und geraet zur handhabung dieses verfahrens.

Country Status (4)

Country Link
US (1) US4885068A (de)
EP (1) EP0357824B1 (de)
JP (1) JP2921874B2 (de)
DE (1) DE3880135T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045166A (en) * 1990-05-21 1991-09-03 Mcnc Magnetron method and apparatus for producing high density ionic gas discharge
JPH0688222A (ja) * 1992-07-21 1994-03-29 Nachi Fujikoshi Corp スパッタイオンプレーティング装置
EP0636702B1 (de) * 1993-07-28 1999-05-19 Asahi Glass Company Ltd. Verfahren zur Herstellung funktioneller Beschichtungen
US6034346A (en) * 1995-05-19 2000-03-07 Hitachi, Ltd. Method and apparatus for plasma processing apparatus
DE29615190U1 (de) * 1996-03-11 1996-11-28 Balzers Verschleissschutz Gmbh Anlage zur Beschichtung von Werkstücken
WO1999014392A1 (de) * 1997-09-12 1999-03-25 Balzers Aktiengesellschaft Tool with tool body and protective layer system
CN100560787C (zh) * 2002-02-27 2009-11-18 亨利J·拉莫斯 在磁化的片等离子体源中在金属衬底上形成氮化钛薄膜
FR2869324B1 (fr) * 2004-04-21 2007-08-10 Saint Gobain Procede de depot sous vide
JP4906331B2 (ja) * 2005-12-06 2012-03-28 新明和工業株式会社 シートプラズマ成膜装置
JP5080977B2 (ja) * 2005-12-06 2012-11-21 新明和工業株式会社 シートプラズマ成膜装置
JP5374288B2 (ja) * 2009-09-15 2013-12-25 新明和工業株式会社 スパッタリング方法
DE102010039365B4 (de) * 2010-08-16 2016-03-24 Forschungsverbund Berlin E.V. Plasma-Prozesse bei Atmosphärendruck
US10056237B2 (en) 2012-09-14 2018-08-21 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
CA2846177C (en) * 2013-03-15 2019-09-17 Vapor Technologies, Inc. Low pressure arc plasma immersion coating vapor deposition and ion treatment
GB2576543A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd An apparatus
GB2576547A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd A method
GB2576542A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd An apparatus
GB2576544A (en) * 2018-08-23 2020-02-26 Dyson Technology Ltd An apparatus
GB2599392B (en) * 2020-09-30 2024-01-03 Dyson Technology Ltd Sputter deposition apparatus and method
GB2599393A (en) * 2020-09-30 2022-04-06 Dyson Technology Ltd Method and apparatus for sputter deposition

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472751A (en) * 1965-06-16 1969-10-14 Ion Physics Corp Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam
FR2148801A5 (en) * 1971-08-04 1973-03-23 Pleshivtsev Nikolai Plasma generator - for charged particles using solenoid field in two electrode discharge chambers
CH551497A (de) * 1971-10-06 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur zerstaeubung von stoffen mittels einer elektrischen niederspannungsentladung.
FR2435810A1 (fr) * 1978-09-08 1980-04-04 Anvar Perfectionnements aux dispositifs de pulverisation cathodique, notamment pour le depot de couches minces
US4424103A (en) * 1983-04-04 1984-01-03 Honeywell Inc. Thin film deposition
US4767931A (en) * 1986-12-17 1988-08-30 Hitachi, Ltd. Ion beam apparatus
JPH0676656B2 (ja) * 1987-03-12 1994-09-28 上進 浦本 高能率シートプラズマ型スパタリング装置
JP2594068B2 (ja) * 1987-10-30 1997-03-26 呉羽化学工業株式会社 加工食品が充填された円筒状フィルム包装体

Also Published As

Publication number Publication date
EP0357824B1 (de) 1993-04-07
JP2921874B2 (ja) 1999-07-19
JPH02104663A (ja) 1990-04-17
EP0357824A1 (de) 1990-03-14
DE3880135D1 (de) 1993-05-13
US4885068A (en) 1989-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee