TW200745313A - Substrate etching liquid - Google Patents

Substrate etching liquid

Info

Publication number
TW200745313A
TW200745313A TW096114375A TW96114375A TW200745313A TW 200745313 A TW200745313 A TW 200745313A TW 096114375 A TW096114375 A TW 096114375A TW 96114375 A TW96114375 A TW 96114375A TW 200745313 A TW200745313 A TW 200745313A
Authority
TW
Taiwan
Prior art keywords
alkyl
hydrogen atom
etching liquid
carboxyl group
substrate
Prior art date
Application number
TW096114375A
Other languages
English (en)
Inventor
Takehisa Kato
Masahiko Kakizawa
Ichiro Hayashida
Original Assignee
Wako Pure Chem Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chem Ind Ltd filed Critical Wako Pure Chem Ind Ltd
Publication of TW200745313A publication Critical patent/TW200745313A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
TW096114375A 2006-05-26 2007-04-24 Substrate etching liquid TW200745313A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006146423 2006-05-26

Publications (1)

Publication Number Publication Date
TW200745313A true TW200745313A (en) 2007-12-16

Family

ID=38778440

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096114375A TW200745313A (en) 2006-05-26 2007-04-24 Substrate etching liquid

Country Status (6)

Country Link
US (1) US20090227115A1 (zh)
JP (1) JPWO2007138921A1 (zh)
KR (1) KR20090023351A (zh)
CN (1) CN101454879A (zh)
TW (1) TW200745313A (zh)
WO (1) WO2007138921A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5379441B2 (ja) * 2008-10-09 2013-12-25 関東化学株式会社 基板処理用アルカリ性水溶液組成物
JP5220569B2 (ja) * 2008-12-05 2013-06-26 旭化成ケミカルズ株式会社 シリコンウェハーエッチング剤及びそれを用いたエッチング方法
JP5220570B2 (ja) * 2008-12-05 2013-06-26 旭化成ケミカルズ株式会社 シリコンウェハーエッチング剤及びそれを用いたエッチング方法
KR101033060B1 (ko) * 2009-01-28 2011-05-06 주식회사 엘지실트론 알칼리 에칭방법 및 이를 이용한 웨이퍼 가공방법
WO2011005456A2 (en) * 2009-06-22 2011-01-13 Cabot Microelectronics Corporation Cmp compositions and methods for suppressing polysilicon removal rates
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
SG192574A1 (en) * 2011-03-11 2013-09-30 Fujifilm Electronic Materials Novel etching composition
CN104584232B (zh) * 2012-08-10 2017-03-08 第一工业制药株式会社 纹理形成用蚀刻液及使用其的纹理形成方法
JP6282507B2 (ja) * 2014-03-27 2018-02-21 第一工業製薬株式会社 テクスチャー形成用エッチング液およびそれを用いたテクスチャー形成方法
JP2016181531A (ja) * 2015-03-23 2016-10-13 ソニー株式会社 半導体装置、および半導体装置の製造方法、固体撮像素子、撮像装置、並びに電子機器
KR102397087B1 (ko) * 2015-06-29 2022-05-12 동우 화인켐 주식회사 폴리실리콘 식각액 조성물
JP6761166B2 (ja) * 2015-07-23 2020-09-23 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液
JP7173018B2 (ja) * 2017-08-31 2022-11-16 日本電気硝子株式会社 ガラスのエッチング方法及びエッチング処理装置並びにガラス板
KR20200086180A (ko) * 2019-01-08 2020-07-16 동우 화인켐 주식회사 실리콘 막 식각액 조성물 및 이를 사용한 패턴 형성 방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2599021B2 (ja) * 1989-11-09 1997-04-09 新日本製鐵株式会社 シリコンウエハのエッチング方法および洗浄方法
JPH04124285A (ja) * 1990-09-13 1992-04-24 Dainichiseika Color & Chem Mfg Co Ltd 金属蒸着フイルムの抜き加工処理剤
JP3426800B2 (ja) * 1995-08-15 2003-07-14 日本パーカライジング株式会社 アルミニウム合金材料のめっき前処理方法
JP3678505B2 (ja) * 1995-08-29 2005-08-03 信越半導体株式会社 半導体ウェーハをエッチングするためのアルカリ溶液の純化方法及び半導体ウェーハのエッチング方法
JP3506172B2 (ja) * 1997-03-13 2004-03-15 信越半導体株式会社 半導体ウェーハのエッチング方法
JP2001250807A (ja) * 1999-12-28 2001-09-14 Shin Etsu Handotai Co Ltd エッチング液、エッチング方法及び半導体シリコンウェーハ
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
JP4736445B2 (ja) * 2004-02-09 2011-07-27 三菱化学株式会社 半導体デバイス用基板洗浄液及び洗浄方法
EP1715510B2 (en) * 2004-02-09 2016-02-24 Mitsubishi Chemical Corporation Substrate cleaning liquid for semiconductor device and cleaning method
CA2579751C (en) * 2004-10-28 2010-12-14 Mimasu Semiconductor Industry Co., Ltd. Process for producing semiconductor substrate, semiconductor substrate for solar application and etching solution
WO2006086265A2 (en) * 2005-02-07 2006-08-17 Applied Materials, Inc. Method and composition for polishing a substrate
US20060278614A1 (en) * 2005-06-08 2006-12-14 Cabot Microelectronics Corporation Polishing composition and method for defect improvement by reduced particle stiction on copper surface
US7879255B2 (en) * 2005-11-04 2011-02-01 Applied Materials, Inc. Method and composition for electrochemically polishing a conductive material on a substrate

Also Published As

Publication number Publication date
KR20090023351A (ko) 2009-03-04
CN101454879A (zh) 2009-06-10
US20090227115A1 (en) 2009-09-10
JPWO2007138921A1 (ja) 2009-10-01
WO2007138921A1 (ja) 2007-12-06

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