TW200742939A - Photoresist composition - Google Patents
Photoresist compositionInfo
- Publication number
- TW200742939A TW200742939A TW096115128A TW96115128A TW200742939A TW 200742939 A TW200742939 A TW 200742939A TW 096115128 A TW096115128 A TW 096115128A TW 96115128 A TW96115128 A TW 96115128A TW 200742939 A TW200742939 A TW 200742939A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist composition
- cresol
- novolac resin
- photoresist
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Phenolic Resins Or Amino Resins (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060041088A KR20070108713A (ko) | 2006-05-08 | 2006-05-08 | 포토레지스트 조성물 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200742939A true TW200742939A (en) | 2007-11-16 |
Family
ID=38838512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096115128A TW200742939A (en) | 2006-05-08 | 2007-04-27 | Photoresist composition |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2007304591A (zh) |
KR (1) | KR20070108713A (zh) |
CN (1) | CN101071266A (zh) |
TW (1) | TW200742939A (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101632965B1 (ko) * | 2008-12-29 | 2016-06-24 | 삼성디스플레이 주식회사 | 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법 |
JP5720157B2 (ja) * | 2010-09-16 | 2015-05-20 | 住友ベークライト株式会社 | フォトレジスト用樹脂組成物 |
CN102842656B (zh) * | 2011-06-24 | 2015-04-15 | 深圳市九洲光电科技有限公司 | 一种大功率白光led荧光粉涂覆方法 |
CN106796400B (zh) * | 2014-10-14 | 2020-11-03 | 太阳油墨制造株式会社 | 层叠结构体 |
WO2017032437A1 (en) * | 2015-08-21 | 2017-03-02 | Merck Patent Gmbh | Patterned bank structures on substrates and formation method |
TW202036162A (zh) * | 2018-12-26 | 2020-10-01 | 日商東京應化工業股份有限公司 | 化學增幅型正型感光性樹脂組成物、感光性乾薄膜、感光性乾薄膜之製造方法、圖型化阻劑膜之製造方法、附鑄型基板之製造方法及鍍敷造形物之製造方法 |
JP6691203B1 (ja) * | 2018-12-26 | 2020-04-28 | 東京応化工業株式会社 | 化学増幅型ポジ型感光性樹脂組成物、感光性ドライフィルム、感光性ドライフィルムの製造方法、パターン化されたレジスト膜の製造方法、鋳型付き基板の製造方法及びめっき造形物の製造方法 |
CN113461885B (zh) * | 2021-08-09 | 2022-07-05 | 北京彤程创展科技有限公司 | 一种光刻胶用酚醛树脂及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03150567A (ja) * | 1989-11-08 | 1991-06-26 | Mitsubishi Kasei Corp | ポジ型フォトレジスト塗布組成物 |
JPH0416848A (ja) * | 1990-05-10 | 1992-01-21 | Nippon Zeon Co Ltd | ポジ型フオトレジスト組成物 |
JPH08220750A (ja) * | 1995-02-20 | 1996-08-30 | Nippon Zeon Co Ltd | ポジ型レジスト組成物 |
US6045966A (en) * | 1997-12-15 | 2000-04-04 | Clariant Finance (Bvi) Limited | Fractionated novolak resin and photoresist composition therefrom |
KR100846085B1 (ko) * | 2001-10-31 | 2008-07-14 | 주식회사 동진쎄미켐 | 액정표시장치 회로용 포토레지스트 조성물 |
JP2006330232A (ja) * | 2005-05-25 | 2006-12-07 | Sekisui Chem Co Ltd | リフトオフ用ポジ型フォトレジスト組成物 |
JP2006330231A (ja) * | 2005-05-25 | 2006-12-07 | Sekisui Chem Co Ltd | リフトオフ用ポジ型フォトレジスト組成物 |
JP2008231314A (ja) * | 2007-03-22 | 2008-10-02 | Sumitomo Bakelite Co Ltd | ノボラック型フェノール樹脂 |
-
2006
- 2006-05-08 KR KR1020060041088A patent/KR20070108713A/ko not_active Application Discontinuation
-
2007
- 2007-04-19 CN CNA2007100969335A patent/CN101071266A/zh active Pending
- 2007-04-27 TW TW096115128A patent/TW200742939A/zh unknown
- 2007-05-07 JP JP2007122599A patent/JP2007304591A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101071266A (zh) | 2007-11-14 |
JP2007304591A (ja) | 2007-11-22 |
KR20070108713A (ko) | 2007-11-13 |
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