TW200739675A - Substrate processing method, substrate processing device and manufacturing method for semiconductor device - Google Patents

Substrate processing method, substrate processing device and manufacturing method for semiconductor device

Info

Publication number
TW200739675A
TW200739675A TW096101322A TW96101322A TW200739675A TW 200739675 A TW200739675 A TW 200739675A TW 096101322 A TW096101322 A TW 096101322A TW 96101322 A TW96101322 A TW 96101322A TW 200739675 A TW200739675 A TW 200739675A
Authority
TW
Taiwan
Prior art keywords
substrate processing
exposure
main face
treatment
manufacturing
Prior art date
Application number
TW096101322A
Other languages
English (en)
Inventor
Eishi Shiobara
Kentaro Matsunaga
Daisuke Kawamura
Tomoyuki Takeishi
Kei Hayasaki
Shinichi Ito
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200739675A publication Critical patent/TW200739675A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/02—Settling tanks with single outlets for the separated liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/24—Feed or discharge mechanisms for settling tanks
    • B01D21/2405—Feed mechanisms for settling tanks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/24—Feed or discharge mechanisms for settling tanks
    • B01D21/2433—Discharge mechanisms for floating particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D21/00—Separation of suspended solid particles from liquids by sedimentation
    • B01D21/24—Feed or discharge mechanisms for settling tanks
    • B01D21/245—Discharge mechanisms for the sediments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F27/00—Mixers with rotary stirring devices in fixed receptacles; Kneaders
    • B01F27/80—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis
    • B01F27/91—Mixers with rotary stirring devices in fixed receptacles; Kneaders with stirrers rotating about a substantially vertical axis with propellers
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/162—Protective or antiabrasion layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW096101322A 2006-01-20 2007-01-12 Substrate processing method, substrate processing device and manufacturing method for semiconductor device TW200739675A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006013061A JP2007194503A (ja) 2006-01-20 2006-01-20 基板処理方法および基板処理装置

Publications (1)

Publication Number Publication Date
TW200739675A true TW200739675A (en) 2007-10-16

Family

ID=38368978

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096101322A TW200739675A (en) 2006-01-20 2007-01-12 Substrate processing method, substrate processing device and manufacturing method for semiconductor device

Country Status (5)

Country Link
US (1) US7794923B2 (zh)
JP (1) JP2007194503A (zh)
KR (1) KR100889891B1 (zh)
CN (1) CN101005015A (zh)
TW (1) TW200739675A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008210980A (ja) * 2007-02-26 2008-09-11 Toshiba Corp パターン形成方法
JP2009016657A (ja) * 2007-07-06 2009-01-22 Tokyo Electron Ltd レジストパターンの再形成方法
KR100899396B1 (ko) * 2008-01-29 2009-05-27 주식회사 하이닉스반도체 블랭크 마스크 및 그 형성방법 및 기판 표면 개질 방법
CN102027570B (zh) * 2008-02-22 2013-04-24 瑞萨电子株式会社 被曝光基板用防水剂组合物以及抗蚀图形的形成方法
JP2010027952A (ja) * 2008-07-23 2010-02-04 Toshiba Corp 半導体装置の製造方法
JP4816747B2 (ja) 2009-03-04 2011-11-16 東京エレクトロン株式会社 液処理装置及び液処理方法
JP4853536B2 (ja) 2009-03-13 2012-01-11 東京エレクトロン株式会社 塗布、現像装置、塗布、現像方法及び記憶媒体
JP5359642B2 (ja) * 2009-07-22 2013-12-04 東京エレクトロン株式会社 成膜方法
CN102722084B (zh) * 2011-03-31 2014-05-21 京东方科技集团股份有限公司 一种光刻方法和设备
JP5985156B2 (ja) * 2011-04-04 2016-09-06 東京エレクトロン株式会社 半導体基板の超臨界乾燥方法及び装置
JP2013004942A (ja) * 2011-06-22 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法
JP5885553B2 (ja) * 2012-03-23 2016-03-15 株式会社ディスコ 切削装置
CN103572342B (zh) * 2012-07-23 2016-04-20 崇鼎科技有限公司 局部表面处理的屏蔽方法
US9281251B2 (en) * 2013-08-09 2016-03-08 Tokyo Electron Limited Substrate backside texturing
JP2016157779A (ja) * 2015-02-24 2016-09-01 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6507061B2 (ja) 2015-08-04 2019-04-24 東芝メモリ株式会社 基板処理方法
JP6685791B2 (ja) 2016-03-25 2020-04-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法
WO2018216566A1 (ja) * 2017-05-25 2018-11-29 東京エレクトロン株式会社 基板処理方法、記憶媒体及び基板処理システム
CN108080220B (zh) * 2018-01-24 2021-07-06 宁波润华全芯微电子设备有限公司 一种单片硅晶圆气相hmds涂布装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06104248A (ja) * 1992-09-18 1994-04-15 Tokyo Electron Ltd 熱処理装置
JP2829909B2 (ja) * 1993-11-19 1998-12-02 ソニー株式会社 レジスト処理方法及びレジスト処理装置
JPH1041214A (ja) 1996-07-25 1998-02-13 Sony Corp Ｈｍｄｓ処理方法及びｈｍｄｓ処理装置
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3657736B2 (ja) * 1997-04-30 2005-06-08 富士通株式会社 半導体装置の製造方法およびレジスト処理方法
JP2001291655A (ja) 2000-04-07 2001-10-19 Tokyo Electron Ltd 疎水化処理の評価方法、レジストパターンの形成方法及びレジストパターン形成システム
JP4178227B2 (ja) * 2002-06-18 2008-11-12 富士通マイクロエレクトロニクス株式会社 基板処理方法及び半導体装置の製造方法
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4101740B2 (ja) 2003-12-09 2008-06-18 東京エレクトロン株式会社 塗布・現像装置及びレジストパターンの形成方法
WO2005059977A1 (ja) * 2003-12-16 2005-06-30 Nikon Corporation ステージ装置、露光装置、及び露光方法
JP4106017B2 (ja) 2003-12-19 2008-06-25 東京エレクトロン株式会社 現像装置及び現像方法
JP4513590B2 (ja) * 2004-02-19 2010-07-28 株式会社ニコン 光学部品及び露光装置
US20060008746A1 (en) 2004-07-07 2006-01-12 Yasunobu Onishi Method for manufacturing semiconductor device
EP1783823A4 (en) * 2004-07-21 2009-07-22 Nikon Corp EXPOSURE METHOD AND METHOD FOR PRODUCING COMPONENTS
JP4551758B2 (ja) 2004-12-27 2010-09-29 株式会社東芝 液浸露光方法および半導体装置の製造方法
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8821974B2 (en) 2010-08-20 2014-09-02 Dainippon Screen Mfg. Co., Ltd. Substrate processing method
TWI459461B (zh) * 2010-08-20 2014-11-01 Dainippon Screen Mfg 基板處理方法及基板處理裝置
US9005703B2 (en) 2010-08-20 2015-04-14 SCREEN Holdings Co., Ltd. Substrate processing method
US9455134B2 (en) 2010-08-20 2016-09-27 SCREEN Holdings Co., Ltd. Substrate processing method

Also Published As

Publication number Publication date
CN101005015A (zh) 2007-07-25
JP2007194503A (ja) 2007-08-02
US7794923B2 (en) 2010-09-14
KR100889891B1 (ko) 2009-03-20
KR20070077107A (ko) 2007-07-25
US20070190462A1 (en) 2007-08-16

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