TW200737314A - Gas supply system, substrate processing apparatus and gas supply method - Google Patents

Gas supply system, substrate processing apparatus and gas supply method

Info

Publication number
TW200737314A
TW200737314A TW096104484A TW96104484A TW200737314A TW 200737314 A TW200737314 A TW 200737314A TW 096104484 A TW096104484 A TW 096104484A TW 96104484 A TW96104484 A TW 96104484A TW 200737314 A TW200737314 A TW 200737314A
Authority
TW
Taiwan
Prior art keywords
gas supply
gas
branch
processing
additional
Prior art date
Application number
TW096104484A
Other languages
English (en)
Other versions
TWI397112B (zh
Inventor
Kenetsu Mizusawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200737314A publication Critical patent/TW200737314A/zh
Application granted granted Critical
Publication of TWI397112B publication Critical patent/TWI397112B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/02—Pipe-line systems for gases or vapours
    • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/0318—Processes
TW96104484A 2006-02-08 2007-02-07 A gas supply device, a substrate processing device, and a gas supply method TWI397112B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006031731A JP4911984B2 (ja) 2006-02-08 2006-02-08 ガス供給装置，基板処理装置，ガス供給方法及びシャワーヘッド

Publications (2)

Publication Number Publication Date
TW200737314A true TW200737314A (en) 2007-10-01
TWI397112B TWI397112B (zh) 2013-05-21

Family

ID=38492465

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96104484A TWI397112B (zh) 2006-02-08 2007-02-07 A gas supply device, a substrate processing device, and a gas supply method

Country Status (5)

Country Link
US (1) US20070181181A1 (zh)
JP (1) JP4911984B2 (zh)
KR (1) KR100810827B1 (zh)
CN (1) CN101017771A (zh)
TW (1) TWI397112B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI676702B (zh) * 2016-03-04 2019-11-11 日商東京威力科創股份有限公司 混合氣體複數系統供給體系及利用該體系的基板處理裝置

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060124169A1 (en) * 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
KR100725098B1 (ko) * 2005-11-17 2007-06-04 삼성전자주식회사 반도체 제조설비의 유량조절기 오동작 감지장치 및 그 방법
US20080078746A1 (en) * 2006-08-15 2008-04-03 Noriiki Masuda Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US9484213B2 (en) * 2008-03-06 2016-11-01 Tokyo Electron Limited Processing gas diffusing and supplying unit and substrate processing apparatus
JP5230225B2 (ja) 2008-03-06 2013-07-10 東京エレクトロン株式会社 蓋部品、処理ガス拡散供給装置、及び基板処理装置
KR101121202B1 (ko) * 2008-11-14 2012-03-23 세메스 주식회사 다채널을 이용한 공정가스 공급이 가능한 화학기상증착 장치
KR101229775B1 (ko) * 2008-12-26 2013-02-06 엘지디스플레이 주식회사 기판 세정장치
KR101110080B1 (ko) * 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
KR101047469B1 (ko) * 2009-09-14 2011-07-07 엘아이지에이디피 주식회사 샤워 헤드
US9540731B2 (en) 2009-12-04 2017-01-10 Applied Materials, Inc. Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
WO2011159690A2 (en) * 2010-06-15 2011-12-22 Applied Materials, Inc. Multiple precursor showerhead with by-pass ports
TWI534291B (zh) * 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
CN102231360B (zh) * 2011-05-27 2013-05-15 中微半导体设备(上海)有限公司 等离子体刻蚀腔体内刻蚀气体调节方法
JP5860668B2 (ja) 2011-10-28 2016-02-16 東京エレクトロン株式会社 半導体装置の製造方法
US20130295283A1 (en) * 2012-05-07 2013-11-07 Pinecone Material Inc. Chemical vapor deposition apparatus with multiple inlets for controlling film thickness and uniformity
JP6140412B2 (ja) 2012-09-21 2017-05-31 東京エレクトロン株式会社 ガス供給方法及びプラズマ処理装置
JP5580908B2 (ja) * 2013-01-31 2014-08-27 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
TWI627305B (zh) * 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
JP6007143B2 (ja) * 2013-03-26 2016-10-12 東京エレクトロン株式会社 シャワーヘッド、プラズマ処理装置、及びプラズマ処理方法
JP6027490B2 (ja) * 2013-05-13 2016-11-16 東京エレクトロン株式会社 ガスを供給する方法、及びプラズマ処理装置
JP6195481B2 (ja) * 2013-07-08 2017-09-13 東京エレクトロン株式会社 クリーニング方法及び基板処理装置
JP6336719B2 (ja) * 2013-07-16 2018-06-06 株式会社ディスコ プラズマエッチング装置
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
JP6169040B2 (ja) * 2014-05-12 2017-07-26 東京エレクトロン株式会社 プラズマ処理装置の上部電極構造、プラズマ処理装置、及びプラズマ処理装置の運用方法
KR20150140936A (ko) * 2014-06-09 2015-12-17 삼성전자주식회사 유도 결합형 플라즈마(Inductively Coupled Plasma : ICP)를 이용한 식각 장치
JP6305314B2 (ja) * 2014-10-29 2018-04-04 東京エレクトロン株式会社 成膜装置およびシャワーヘッド
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
KR102214350B1 (ko) * 2016-05-20 2021-02-09 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리를 위한 가스 분배 샤워헤드
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
KR102096700B1 (ko) * 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
KR102344450B1 (ko) * 2017-09-26 2021-12-28 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US11535936B2 (en) * 2018-07-23 2022-12-27 Lam Research Corporation Dual gas feed showerhead for deposition
KR102641752B1 (ko) * 2018-11-21 2024-03-04 삼성전자주식회사 가스 주입 모듈, 기판 처리 장치, 및 그를 이용한 반도체 소자의 제조방법
JP2020105590A (ja) 2018-12-27 2020-07-09 キオクシア株式会社 基板処理装置および基板処理方法
CN113205995B (zh) * 2021-05-08 2022-04-08 长鑫存储技术有限公司 气体分配装置、等离子体处理装置、方法及半导体结构
US11940819B1 (en) * 2023-01-20 2024-03-26 Applied Materials, Inc. Mass flow controller based fast gas exchange

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5050213A (en) * 1986-10-14 1991-09-17 Electronic Publishing Resources, Inc. Database usage metering and protection system and method
US5516722A (en) * 1994-10-31 1996-05-14 Texas Instruments Inc. Method for increasing doping uniformity in a flow flange reactor
JPH08158072A (ja) * 1994-12-02 1996-06-18 Nippon Soken Inc ドライエッチング装置
US5683517A (en) * 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US5675510A (en) * 1995-06-07 1997-10-07 Pc Meter L.P. Computer use meter and analyzer
US6162488A (en) * 1996-05-14 2000-12-19 Boston University Method for closed loop control of chemical vapor deposition process
US7166524B2 (en) * 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US6333272B1 (en) * 2000-10-06 2001-12-25 Lam Research Corporation Gas distribution apparatus for semiconductor processing
JP2002280357A (ja) * 2001-03-21 2002-09-27 Sony Corp プラズマエッチング装置およびエッチング方法
JP2003007697A (ja) * 2001-06-21 2003-01-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法および基板処理装置
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
US8271400B2 (en) * 2002-01-15 2012-09-18 Hewlett-Packard Development Company, L.P. Hardware pay-per-use
JP3856730B2 (ja) * 2002-06-03 2006-12-13 東京エレクトロン株式会社 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。
US6816809B2 (en) * 2002-07-23 2004-11-09 Hewlett-Packard Development Company, L.P. Hardware based utilization metering
US20040050326A1 (en) * 2002-09-12 2004-03-18 Thilderkvist Karin Anna Lena Apparatus and method for automatically controlling gas flow in a substrate processing system
US7169231B2 (en) * 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US7627506B2 (en) * 2003-07-10 2009-12-01 International Business Machines Corporation Method of providing metered capacity of temporary computer resources
CN100454200C (zh) * 2003-06-09 2009-01-21 喜开理株式会社 相对压力控制系统和相对流量控制系统
KR100580062B1 (ko) * 2004-02-03 2006-05-12 마츠시타 덴끼 산교 가부시키가이샤 화학기상성장장치 및 막 성장방법
JP4606944B2 (ja) * 2004-06-02 2011-01-05 東京エレクトロン株式会社 プラズマ処理装置およびインピーダンス調整方法
KR101247857B1 (ko) * 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US8612480B2 (en) * 2004-10-23 2013-12-17 International Business Machines Corporation Permitting utilization of computer system resources in accordance with their licensing
US20060165005A1 (en) * 2004-11-15 2006-07-27 Microsoft Corporation Business method for pay-as-you-go computer and dynamic differential pricing
US7694153B2 (en) * 2004-11-15 2010-04-06 Microsoft Corporation Changing product behavior in accordance with license
US8176564B2 (en) * 2004-11-15 2012-05-08 Microsoft Corporation Special PC mode entered upon detection of undesired state
US8074223B2 (en) * 2005-01-31 2011-12-06 International Business Machines Corporation Permanently activating resources based on previous temporary resource usage
US7406446B2 (en) * 2005-03-08 2008-07-29 Microsoft Corporation System and method for trustworthy metering and deactivation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI676702B (zh) * 2016-03-04 2019-11-11 日商東京威力科創股份有限公司 混合氣體複數系統供給體系及利用該體系的基板處理裝置
US10550471B2 (en) 2016-03-04 2020-02-04 Tokyo Electron Limited Mixed gas multiple line supply system and substrate processing apparatus using same

Also Published As

Publication number Publication date
JP4911984B2 (ja) 2012-04-04
KR20070080824A (ko) 2007-08-13
US20070181181A1 (en) 2007-08-09
CN101017771A (zh) 2007-08-15
KR100810827B1 (ko) 2008-03-07
TWI397112B (zh) 2013-05-21
JP2007214295A (ja) 2007-08-23

Similar Documents

Publication Publication Date Title
TW200737314A (en) Gas supply system, substrate processing apparatus and gas supply method
TW200733184A (en) Gas supply system, substrate processing apparatus and gas supply method
TW200633049A (en) Gas supply unit, substrate processing apparatus, and supply gas setting method
TW200735209A (en) Gas switching section including valves having different flow coefficients for gas distribution system
GB2463812A (en) Apparatus and method for managings supply of additive at wellsites
TW200636856A (en) Semiconductor processing apparatus and method
TW200746294A (en) Processing apparatus and processing method
IL160393A0 (en) Method for supplying divided gas to a chamber from a gas supply apparatus equipped with a flow rate control system
WO2007069010A3 (en) Fuel cell system, moving object equipped with fuel cell system, and abnormality judgment method for fuel cell system
TW200710264A (en) Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber
TW200736899A (en) Method and apparatus for controlling power supply in a computer system
UA97105C2 (ru) Способ и устройство подачи химикатов в поток обработки
WO2011068936A3 (en) Methods and apparatus for treating exhaust gas in a processing system
GB0720868D0 (en) Apparatus for delivering a fluid and methods relating thereto
UA87063C2 (ru) Устройство для питания топливом газотурбинного двигателя с регулируемым расходом топлива
WO2011149508A3 (en) Apparatus and method for temperature control of a semiconductor substrate support
MX2009004284A (es) Localizador de carga termica.
MY155509A (en) Plasma temperature control apparatus and plasma temperature control method
SG158854A1 (en) Liquid discharge device
ATE284055T1 (de) Verfahren und vorrichtung zur regelung von wasserversorgungsdruck
TW200619890A (en) Temperature control method and system for small flow rate liquid
SG158009A1 (en) Skid architecture for a power augmentation system
UA103820C2 (ru) Устройство и способ для обработки табака
MY154132A (en) System and methods for supplying auxiliary fuel streams during intermittent byproduct discharge from pressure swing adsorption assemblies
TW200634919A (en) System and method for supplying functional water

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees