TW200733360A - Non-volatile memory element and method of manufacturing the same - Google Patents
Non-volatile memory element and method of manufacturing the sameInfo
- Publication number
- TW200733360A TW200733360A TW095140387A TW95140387A TW200733360A TW 200733360 A TW200733360 A TW 200733360A TW 095140387 A TW095140387 A TW 095140387A TW 95140387 A TW95140387 A TW 95140387A TW 200733360 A TW200733360 A TW 200733360A
- Authority
- TW
- Taiwan
- Prior art keywords
- recording layer
- volatile memory
- memory element
- top electrode
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 230000000977 initiatory effect Effects 0.000 abstract 1
- 239000012782 phase change material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/52—Structure characterized by the electrode material, shape, etc.
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/265,275 US7671356B2 (en) | 2005-11-03 | 2005-11-03 | Electrically rewritable non-volatile memory element and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200733360A true TW200733360A (en) | 2007-09-01 |
Family
ID=37996071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095140387A TW200733360A (en) | 2005-11-03 | 2006-11-01 | Non-volatile memory element and method of manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (1) | US7671356B2 (zh) |
JP (1) | JP4577693B2 (zh) |
CN (1) | CN100559623C (zh) |
TW (1) | TW200733360A (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI345827B (en) * | 2007-01-10 | 2011-07-21 | Nanya Technology Corp | Phase change memory device and method of fabricating the same |
US7663135B2 (en) * | 2007-01-31 | 2010-02-16 | Macronix International Co., Ltd. | Memory cell having a side electrode contact |
KR100960927B1 (ko) | 2007-03-30 | 2010-06-04 | 주식회사 하이닉스반도체 | 상변환 기억 소자 및 그 제조방법 |
TWI336128B (en) * | 2007-05-31 | 2011-01-11 | Ind Tech Res Inst | Phase change memory devices and fabrication methods thereof |
US20090039333A1 (en) * | 2007-08-09 | 2009-02-12 | Heon Yong Chang | Phase change memory device and method for manufacturing the same |
KR100876767B1 (ko) | 2007-09-06 | 2009-01-07 | 주식회사 하이닉스반도체 | 상 변화 메모리 장치의 형성 방법 |
US7981755B2 (en) * | 2007-10-25 | 2011-07-19 | International Business Machines Corporation | Self aligned ring electrodes |
US8043888B2 (en) | 2008-01-18 | 2011-10-25 | Freescale Semiconductor, Inc. | Phase change memory cell with heater and method therefor |
US8563355B2 (en) * | 2008-01-18 | 2013-10-22 | Freescale Semiconductor, Inc. | Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET |
WO2009122582A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
WO2009122583A1 (ja) * | 2008-04-03 | 2009-10-08 | 株式会社 東芝 | 不揮発性記憶装置及びその製造方法 |
KR101535649B1 (ko) | 2009-01-06 | 2015-07-09 | 삼성전자주식회사 | 가변저항 기억 소자 및 그 제조방법 |
JP5297342B2 (ja) * | 2009-11-02 | 2013-09-25 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5259552B2 (ja) * | 2009-11-02 | 2013-08-07 | 株式会社東芝 | 不揮発性半導体記憶装置及びその駆動方法 |
KR101124298B1 (ko) | 2009-12-29 | 2012-03-27 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 제조 방법 |
US9349950B2 (en) | 2013-03-13 | 2016-05-24 | Microchip Technology Incorporated | Resistive memory cell with trench-shaped bottom electrode |
US9444040B2 (en) * | 2013-03-13 | 2016-09-13 | Microchip Technology Incorporated | Sidewall type memory cell |
US9385313B2 (en) | 2014-02-19 | 2016-07-05 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
US9412942B2 (en) | 2014-02-19 | 2016-08-09 | Microchip Technology Incorporated | Resistive memory cell with bottom electrode having a sloped side wall |
US9269606B2 (en) | 2014-02-19 | 2016-02-23 | Microchip Technology Incorporated | Spacer enabled active isolation for an integrated circuit device |
US10003021B2 (en) | 2014-02-19 | 2018-06-19 | Microchip Technology Incorporated | Resistive memory cell with sloped bottom electrode |
US9865813B2 (en) | 2014-02-19 | 2018-01-09 | Microchip Technology Incorporated | Method for forming resistive memory cell having a spacer region under an electrolyte region and a top electrode |
US9318702B2 (en) | 2014-02-19 | 2016-04-19 | Microchip Technology Incorporated | Resistive memory cell having a reduced conductive path area |
JP6190435B2 (ja) * | 2015-10-26 | 2017-08-30 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 記憶装置、及び半導体装置 |
US11264568B2 (en) * | 2016-07-29 | 2022-03-01 | Micron Technology, Inc. | Textured memory cell structures |
US10381559B1 (en) | 2018-06-07 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same |
US10381409B1 (en) | 2018-06-07 | 2019-08-13 | Sandisk Technologies Llc | Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same |
CN109786550B (zh) * | 2019-03-18 | 2024-04-05 | 北京时代全芯存储技术股份有限公司 | 相变化记忆体及其制造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US5536947A (en) | 1991-01-18 | 1996-07-16 | Energy Conversion Devices, Inc. | Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom |
US7247876B2 (en) * | 2000-06-30 | 2007-07-24 | Intel Corporation | Three dimensional programmable device and method for fabricating the same |
KR100448908B1 (ko) * | 2002-09-03 | 2004-09-16 | 삼성전자주식회사 | 상전이 기억 소자 구조 및 그 제조 방법 |
KR100481865B1 (ko) * | 2002-11-01 | 2005-04-11 | 삼성전자주식회사 | 상변환 기억소자 및 그 제조방법 |
US7242019B2 (en) * | 2002-12-13 | 2007-07-10 | Intel Corporation | Shunted phase change memory |
DE60312040T2 (de) * | 2002-12-19 | 2007-12-13 | Koninklijke Philips Electronics N.V. | Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung |
JP2004241535A (ja) * | 2003-02-05 | 2004-08-26 | Matsushita Electric Ind Co Ltd | 抵抗変化素子および製造方法 |
KR100486306B1 (ko) | 2003-02-24 | 2005-04-29 | 삼성전자주식회사 | 셀프 히터 구조를 가지는 상변화 메모리 소자 |
US7067865B2 (en) * | 2003-06-06 | 2006-06-27 | Macronix International Co., Ltd. | High density chalcogenide memory cells |
JP2005051122A (ja) * | 2003-07-30 | 2005-02-24 | Renesas Technology Corp | 半導体記憶装置およびその製造方法 |
US7161167B2 (en) * | 2003-08-04 | 2007-01-09 | Intel Corporation | Lateral phase change memory |
KR100663348B1 (ko) * | 2004-09-02 | 2007-01-02 | 삼성전자주식회사 | 몰딩막 및 형성막 패턴 사이에 개재된 상전이막 패턴을갖는 피이. 램들 및 그 형성방법들. |
US7202493B2 (en) * | 2004-11-30 | 2007-04-10 | Macronix International Co., Inc. | Chalcogenide memory having a small active region |
JP4817410B2 (ja) * | 2005-09-12 | 2011-11-16 | エルピーダメモリ株式会社 | 相変化メモリ素子およびその製造方法 |
US7541607B2 (en) * | 2005-11-02 | 2009-06-02 | Elpida Memory, Inc. | Electrically rewritable non-volatile memory element and method of manufacturing the same |
-
2005
- 2005-11-03 US US11/265,275 patent/US7671356B2/en active Active
-
2006
- 2006-09-28 JP JP2006264382A patent/JP4577693B2/ja not_active Expired - Fee Related
- 2006-11-01 TW TW095140387A patent/TW200733360A/zh unknown
- 2006-11-02 CN CNB2006101439219A patent/CN100559623C/zh active Active
Also Published As
Publication number | Publication date |
---|---|
US7671356B2 (en) | 2010-03-02 |
JP2007129200A (ja) | 2007-05-24 |
CN1960019A (zh) | 2007-05-09 |
US20070097738A1 (en) | 2007-05-03 |
JP4577693B2 (ja) | 2010-11-10 |
CN100559623C (zh) | 2009-11-11 |
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