TW200733360A - Non-volatile memory element and method of manufacturing the same - Google Patents

Non-volatile memory element and method of manufacturing the same

Info

Publication number
TW200733360A
TW200733360A TW095140387A TW95140387A TW200733360A TW 200733360 A TW200733360 A TW 200733360A TW 095140387 A TW095140387 A TW 095140387A TW 95140387 A TW95140387 A TW 95140387A TW 200733360 A TW200733360 A TW 200733360A
Authority
TW
Taiwan
Prior art keywords
recording layer
volatile memory
memory element
top electrode
manufacturing
Prior art date
Application number
TW095140387A
Other languages
English (en)
Inventor
Isamu Asano
Tyler A Lowrey
Original Assignee
Elpida Memory Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Publication of TW200733360A publication Critical patent/TW200733360A/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5678—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using amorphous/crystalline phase transition storage elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
TW095140387A 2005-11-03 2006-11-01 Non-volatile memory element and method of manufacturing the same TW200733360A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/265,275 US7671356B2 (en) 2005-11-03 2005-11-03 Electrically rewritable non-volatile memory element and method of manufacturing the same

Publications (1)

Publication Number Publication Date
TW200733360A true TW200733360A (en) 2007-09-01

Family

ID=37996071

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095140387A TW200733360A (en) 2005-11-03 2006-11-01 Non-volatile memory element and method of manufacturing the same

Country Status (4)

Country Link
US (1) US7671356B2 (zh)
JP (1) JP4577693B2 (zh)
CN (1) CN100559623C (zh)
TW (1) TW200733360A (zh)

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TWI345827B (en) * 2007-01-10 2011-07-21 Nanya Technology Corp Phase change memory device and method of fabricating the same
US7663135B2 (en) * 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
KR100960927B1 (ko) 2007-03-30 2010-06-04 주식회사 하이닉스반도체 상변환 기억 소자 및 그 제조방법
TWI336128B (en) * 2007-05-31 2011-01-11 Ind Tech Res Inst Phase change memory devices and fabrication methods thereof
US20090039333A1 (en) * 2007-08-09 2009-02-12 Heon Yong Chang Phase change memory device and method for manufacturing the same
KR100876767B1 (ko) 2007-09-06 2009-01-07 주식회사 하이닉스반도체 상 변화 메모리 장치의 형성 방법
US7981755B2 (en) * 2007-10-25 2011-07-19 International Business Machines Corporation Self aligned ring electrodes
US8043888B2 (en) 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
US8563355B2 (en) * 2008-01-18 2013-10-22 Freescale Semiconductor, Inc. Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
WO2009122582A1 (ja) * 2008-04-03 2009-10-08 株式会社 東芝 不揮発性記憶装置及びその製造方法
WO2009122583A1 (ja) * 2008-04-03 2009-10-08 株式会社 東芝 不揮発性記憶装置及びその製造方法
KR101535649B1 (ko) 2009-01-06 2015-07-09 삼성전자주식회사 가변저항 기억 소자 및 그 제조방법
JP5297342B2 (ja) * 2009-11-02 2013-09-25 株式会社東芝 不揮発性半導体記憶装置
JP5259552B2 (ja) * 2009-11-02 2013-08-07 株式会社東芝 不揮発性半導体記憶装置及びその駆動方法
KR101124298B1 (ko) 2009-12-29 2012-03-27 주식회사 하이닉스반도체 상변화 메모리 소자 제조 방법
US9349950B2 (en) 2013-03-13 2016-05-24 Microchip Technology Incorporated Resistive memory cell with trench-shaped bottom electrode
US9444040B2 (en) * 2013-03-13 2016-09-13 Microchip Technology Incorporated Sidewall type memory cell
US9385313B2 (en) 2014-02-19 2016-07-05 Microchip Technology Incorporated Resistive memory cell having a reduced conductive path area
US9412942B2 (en) 2014-02-19 2016-08-09 Microchip Technology Incorporated Resistive memory cell with bottom electrode having a sloped side wall
US9269606B2 (en) 2014-02-19 2016-02-23 Microchip Technology Incorporated Spacer enabled active isolation for an integrated circuit device
US10003021B2 (en) 2014-02-19 2018-06-19 Microchip Technology Incorporated Resistive memory cell with sloped bottom electrode
US9865813B2 (en) 2014-02-19 2018-01-09 Microchip Technology Incorporated Method for forming resistive memory cell having a spacer region under an electrolyte region and a top electrode
US9318702B2 (en) 2014-02-19 2016-04-19 Microchip Technology Incorporated Resistive memory cell having a reduced conductive path area
JP6190435B2 (ja) * 2015-10-26 2017-08-30 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 記憶装置、及び半導体装置
US11264568B2 (en) * 2016-07-29 2022-03-01 Micron Technology, Inc. Textured memory cell structures
US10381559B1 (en) 2018-06-07 2019-08-13 Sandisk Technologies Llc Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
US10381409B1 (en) 2018-06-07 2019-08-13 Sandisk Technologies Llc Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same
CN109786550B (zh) * 2019-03-18 2024-04-05 北京时代全芯存储技术股份有限公司 相变化记忆体及其制造方法

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DE60312040T2 (de) * 2002-12-19 2007-12-13 Koninklijke Philips Electronics N.V. Elektrische vorrichtung mit phasenwechselmaterial und parallelheizung
JP2004241535A (ja) * 2003-02-05 2004-08-26 Matsushita Electric Ind Co Ltd 抵抗変化素子および製造方法
KR100486306B1 (ko) 2003-02-24 2005-04-29 삼성전자주식회사 셀프 히터 구조를 가지는 상변화 메모리 소자
US7067865B2 (en) * 2003-06-06 2006-06-27 Macronix International Co., Ltd. High density chalcogenide memory cells
JP2005051122A (ja) * 2003-07-30 2005-02-24 Renesas Technology Corp 半導体記憶装置およびその製造方法
US7161167B2 (en) * 2003-08-04 2007-01-09 Intel Corporation Lateral phase change memory
KR100663348B1 (ko) * 2004-09-02 2007-01-02 삼성전자주식회사 몰딩막 및 형성막 패턴 사이에 개재된 상전이막 패턴을갖는 피이. 램들 및 그 형성방법들.
US7202493B2 (en) * 2004-11-30 2007-04-10 Macronix International Co., Inc. Chalcogenide memory having a small active region
JP4817410B2 (ja) * 2005-09-12 2011-11-16 エルピーダメモリ株式会社 相変化メモリ素子およびその製造方法
US7541607B2 (en) * 2005-11-02 2009-06-02 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same

Also Published As

Publication number Publication date
US7671356B2 (en) 2010-03-02
JP2007129200A (ja) 2007-05-24
CN1960019A (zh) 2007-05-09
US20070097738A1 (en) 2007-05-03
JP4577693B2 (ja) 2010-11-10
CN100559623C (zh) 2009-11-11

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