TW200731521A - Semiconductor device and method for making same - Google Patents

Semiconductor device and method for making same

Info

Publication number
TW200731521A
TW200731521A TW095145300A TW95145300A TW200731521A TW 200731521 A TW200731521 A TW 200731521A TW 095145300 A TW095145300 A TW 095145300A TW 95145300 A TW95145300 A TW 95145300A TW 200731521 A TW200731521 A TW 200731521A
Authority
TW
Taiwan
Prior art keywords
light receiving
receiving element
region
semiconductor substrate
conductive terminals
Prior art date
Application number
TW095145300A
Other languages
English (en)
Other versions
TWI331396B (en
Inventor
Takashi Noma
Kazuo Okada
Shinzo Ishibe
Katsuhiko Kitagawa
Yuichi Morita
Shigeki Otsuka
Hiroshi Yamada
Noboru Okubo
Hiroyuki Shinogi
Mitsuru Okigawa
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Publication of TW200731521A publication Critical patent/TW200731521A/zh
Application granted granted Critical
Publication of TWI331396B publication Critical patent/TWI331396B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/023—Redistribution layers [RDL] for bonding areas
    • H01L2224/0237—Disposition of the redistribution layers
    • H01L2224/02377—Fan-in arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05005—Structure
    • H01L2224/05008—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/0502—Disposition
    • H01L2224/05024—Disposition the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05541—Structure
    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Light Receiving Elements (AREA)
TW095145300A 2005-12-15 2006-12-06 Semiconductor device and method for making same TWI331396B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005361707A JP2007165696A (ja) 2005-12-15 2005-12-15 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200731521A true TW200731521A (en) 2007-08-16
TWI331396B TWI331396B (en) 2010-10-01

Family

ID=37858971

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095145300A TWI331396B (en) 2005-12-15 2006-12-06 Semiconductor device and method for making same

Country Status (7)

Country Link
US (1) US7633133B2 (zh)
EP (1) EP1798768A3 (zh)
JP (1) JP2007165696A (zh)
KR (1) KR100840070B1 (zh)
CN (1) CN1983612B (zh)
SG (1) SG133536A1 (zh)
TW (1) TWI331396B (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5010244B2 (ja) * 2005-12-15 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
WO2008032566A1 (fr) * 2006-09-11 2008-03-20 Sanyo Electric Co., Ltd. Dispositif semi-conducteur et procédé pour le fabriquer
US7679167B2 (en) * 2007-01-08 2010-03-16 Visera Technologies Company, Limited Electronic assembly for image sensor device and fabrication method thereof
JP5301108B2 (ja) * 2007-04-20 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP2009032929A (ja) * 2007-07-27 2009-02-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2009099591A (ja) * 2007-10-12 2009-05-07 Toshiba Corp 固体撮像素子及びその製造方法
JP5498684B2 (ja) * 2008-11-07 2014-05-21 ラピスセミコンダクタ株式会社 半導体モジュール及びその製造方法
JP5427394B2 (ja) 2008-11-21 2014-02-26 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
CN101419952B (zh) * 2008-12-03 2010-09-15 晶方半导体科技（苏州）有限公司 晶圆级芯片封装方法及封装结构
JP5150566B2 (ja) * 2009-06-22 2013-02-20 株式会社東芝 半導体装置およびカメラモジュール
JP5757614B2 (ja) * 2010-03-05 2015-07-29 国立大学法人九州工業大学 撮像素子
JP2013084722A (ja) * 2011-10-07 2013-05-09 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
JP6215612B2 (ja) * 2013-08-07 2017-10-18 ソニーセミコンダクタソリューションズ株式会社 発光素子、発光素子ウェーハ及び電子機器
JP6279857B2 (ja) * 2013-08-29 2018-02-14 京セラ株式会社 電子装置、多数個取り枠体および多数個取り電子装置
JP6642002B2 (ja) * 2013-11-06 2020-02-05 ソニー株式会社 半導体装置、固体撮像素子、および電子機器
JP6658782B2 (ja) * 2013-12-19 2020-03-04 ソニー株式会社 半導体装置の製造方法
JP6300029B2 (ja) * 2014-01-27 2018-03-28 ソニー株式会社 撮像素子、製造装置、製造方法
JP2016001633A (ja) 2014-06-11 2016-01-07 ソニー株式会社 固体撮像素子、および電子装置
TWI585870B (zh) * 2015-05-20 2017-06-01 精材科技股份有限公司 晶片封裝體及其製造方法
JP7266961B2 (ja) * 2015-12-31 2023-05-01 晶元光電股▲ふん▼有限公司 発光装置
JP2018133392A (ja) * 2017-02-14 2018-08-23 キヤノン株式会社 光電変換装置

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521698A (ja) 1991-07-11 1993-01-29 Mitsubishi Electric Corp 半導体装置
US5656819A (en) * 1994-11-16 1997-08-12 Sandia Corporation Pulsed ion beam source
JP2674545B2 (ja) 1995-01-20 1997-11-12 日本電気株式会社 赤外線検出器及びその駆動方法
US5804827A (en) 1995-10-27 1998-09-08 Nikon Corporation Infrared ray detection device and solid-state imaging apparatus
JPH09321333A (ja) 1996-05-24 1997-12-12 Nikon Corp 赤外線検出素子
US5929440A (en) 1996-10-25 1999-07-27 Hypres, Inc. Electromagnetic radiation detector
US5981314A (en) 1996-10-31 1999-11-09 Amkor Technology, Inc. Near chip size integrated circuit package
US5973337A (en) 1997-08-25 1999-10-26 Motorola, Inc. Ball grid device with optically transmissive coating
JPH11167154A (ja) 1997-12-03 1999-06-22 Olympus Optical Co Ltd フレキシブルプリント基板
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
JP2000349238A (ja) 1999-06-04 2000-12-15 Seiko Epson Corp 半導体装置
US6326689B1 (en) 1999-07-26 2001-12-04 Stmicroelectronics, Inc. Backside contact for touchchip
US6465786B1 (en) 1999-09-01 2002-10-15 Micron Technology, Inc. Deep infrared photodiode for a CMOS imager
JP2001085652A (ja) 1999-09-09 2001-03-30 Sony Corp 赤外線用ｃｃｄ撮像素子パッケージ
JP3632558B2 (ja) 1999-09-17 2005-03-23 日立化成工業株式会社 封止用エポキシ樹脂組成物及び電子部品装置
US6455774B1 (en) 1999-12-08 2002-09-24 Amkor Technology, Inc. Molded image sensor package
JP2002094082A (ja) * 2000-07-11 2002-03-29 Seiko Epson Corp 光素子及びその製造方法並びに電子機器
JP3409848B2 (ja) * 2000-08-29 2003-05-26 日本電気株式会社 熱型赤外線検出器
WO2002023220A1 (fr) 2000-09-11 2002-03-21 Hamamatsu Photonics K.K. Panneau de scintillateur, capteur d'images radiographiques et procedes de production
KR20020048716A (ko) * 2000-12-18 2002-06-24 박종섭 기판 뒷면에 반사층을 구비하는 이미지 센서 및 그 제조방법
JP3910817B2 (ja) 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
JP4037197B2 (ja) 2002-07-17 2008-01-23 富士フイルム株式会社 半導体撮像装置実装構造体の製造方法
US20040108588A1 (en) 2002-09-24 2004-06-10 Cookson Electronics, Inc. Package for microchips
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
JP5030360B2 (ja) * 2002-12-25 2012-09-19 オリンパス株式会社 固体撮像装置の製造方法
JP2004260135A (ja) * 2003-02-06 2004-09-16 Sanyo Electric Co Ltd 半導体集積装置及びその製造方法
JP2004319530A (ja) 2003-02-28 2004-11-11 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
TWI229890B (en) 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
CN100587962C (zh) 2003-07-03 2010-02-03 泰塞拉技术匈牙利公司 用于封装集成电路器件的方法和设备
JP4401181B2 (ja) 2003-08-06 2010-01-20 三洋電機株式会社 半導体装置及びその製造方法
US7329861B2 (en) 2003-10-14 2008-02-12 Micron Technology, Inc. Integrally packaged imaging module
US7332408B2 (en) 2004-06-28 2008-02-19 Micron Technology, Inc. Isolation trenches for memory devices
JP2006093367A (ja) 2004-09-24 2006-04-06 Sanyo Electric Co Ltd 半導体装置の製造方法
JP5010244B2 (ja) 2005-12-15 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP5301108B2 (ja) 2007-04-20 2013-09-25 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP2009032929A (ja) 2007-07-27 2009-02-12 Sanyo Electric Co Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20070145590A1 (en) 2007-06-28
SG133536A1 (en) 2007-07-30
CN1983612A (zh) 2007-06-20
US7633133B2 (en) 2009-12-15
EP1798768A3 (en) 2009-07-08
TWI331396B (en) 2010-10-01
EP1798768A2 (en) 2007-06-20
KR20070064268A (ko) 2007-06-20
CN1983612B (zh) 2010-07-21
JP2007165696A (ja) 2007-06-28
KR100840070B1 (ko) 2008-06-19

Similar Documents

Publication Publication Date Title
TW200731521A (en) Semiconductor device and method for making same
WO2008054660A3 (en) Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
WO2007149362A3 (en) Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
WO2008051596A3 (en) Solid state light sheet and encapsulated bare die semiconductor circuits
TW200607083A (en) Display device and method of manufacturing the same
TWI260056B (en) Module structure having an embedded chip
TW200620502A (en) Semiconductor device, circuit board, electro-optic device, electronic device
TW200742249A (en) Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
TW200641969A (en) Sensor type semiconductor device and method for fabricating thereof
TWI256146B (en) Sensor semiconductor device and fabrication method thereof
EP1889285A4 (en) METHOD AND SYSTEM FOR PRODUCING THE SIDE OF SEMICONDUCTOR COMPONENTS WITH CONDUCTIVE INTERCONNECTIONS
WO2006056648A3 (en) Electronics module and method for manufacturing the same
WO2011008443A3 (en) Wafer level camera module with active optical element
US20140048828A1 (en) Led display panel and led display apparatus
WO2003069695A3 (en) Multilayer package for a semiconductor device
DE602007007201D1 (de) Elastisch verformbare integrierte schaltung
EP1536478A3 (en) Solid state imaging device and producing method thereof
TW200607028A (en) Image sensor module packaging structure and method thereof
TW200644187A (en) Semiconductor device and method for manufacturing semiconductor device
MY147999A (en) Surface mountable chip
WO2005112114A3 (en) Universal interconnect die
EP1439581A3 (en) Interconnection structure
EP1959280A3 (en) Optical transmitter module
CN105657296A (zh) 具有互连层间隙的图像感测设备及相关方法
TW200701774A (en) Stack-type image sensor module

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees