TW200723440A - Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same - Google Patents
Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the sameInfo
- Publication number
- TW200723440A TW200723440A TW095112766A TW95112766A TW200723440A TW 200723440 A TW200723440 A TW 200723440A TW 095112766 A TW095112766 A TW 095112766A TW 95112766 A TW95112766 A TW 95112766A TW 200723440 A TW200723440 A TW 200723440A
- Authority
- TW
- Taiwan
- Prior art keywords
- hard mask
- forming
- high selectivity
- semiconductor device
- same
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
- H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050108315A KR100801308B1 (ko) | 2005-11-12 | 2005-11-12 | 고선택비 하드마스크를 이용한 트렌치 형성 방법 및 그를이용한 반도체소자의 소자분리 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200723440A true TW200723440A (en) | 2007-06-16 |
Family
ID=38041458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095112766A TW200723440A (en) | 2005-11-12 | 2006-04-11 | Method for forming trench using hard mask with high selectivity and isolation method for semiconductor device using the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20070111467A1 (zh) |
JP (1) | JP2007134668A (zh) |
KR (1) | KR100801308B1 (zh) |
CN (1) | CN1963999A (zh) |
TW (1) | TW200723440A (zh) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5091452B2 (ja) * | 2006-10-06 | 2012-12-05 | 株式会社東芝 | 半導体装置の製造方法 |
US20080160707A1 (en) * | 2006-12-27 | 2008-07-03 | Jin Hyo Jung | Method for fabricating sesmiconductor device |
JP2008227360A (ja) * | 2007-03-15 | 2008-09-25 | Elpida Memory Inc | 半導体装置の製造方法 |
KR100849190B1 (ko) * | 2007-03-19 | 2008-07-30 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
WO2008115600A1 (en) * | 2007-03-21 | 2008-09-25 | Olambda, Inc. | Multi-material hard mask or prepatterned layer for use with multi-patterning photolithography |
KR100871967B1 (ko) * | 2007-06-05 | 2008-12-08 | 주식회사 하이닉스반도체 | 반도체 소자의 미세 패턴 형성 방법 |
US7553770B2 (en) * | 2007-06-06 | 2009-06-30 | Micron Technology, Inc. | Reverse masking profile improvements in high aspect ratio etch |
US7718546B2 (en) * | 2007-06-27 | 2010-05-18 | Sandisk 3D Llc | Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon |
KR101588909B1 (ko) | 2007-12-21 | 2016-02-12 | 램 리써치 코포레이션 | 실리콘 구조의 제조 및 프로파일 제어를 이용한 딥 실리콘 에칭 |
JP4909912B2 (ja) * | 2008-01-10 | 2012-04-04 | 株式会社東芝 | パターン形成方法 |
JP2009206394A (ja) * | 2008-02-29 | 2009-09-10 | Nippon Zeon Co Ltd | 炭素系ハードマスクの形成方法 |
US9018098B2 (en) * | 2008-10-23 | 2015-04-28 | Lam Research Corporation | Silicon etch with passivation using chemical vapor deposition |
US8173547B2 (en) | 2008-10-23 | 2012-05-08 | Lam Research Corporation | Silicon etch with passivation using plasma enhanced oxidation |
TW201036142A (en) * | 2009-03-16 | 2010-10-01 | Nanya Technology Corp | Manufacturing method of supporting structure for stack capacitor in semiconductor device |
KR101073075B1 (ko) * | 2009-03-31 | 2011-10-12 | 주식회사 하이닉스반도체 | 이중 패터닝 공정을 이용한 반도체장치 제조 방법 |
US20110014726A1 (en) | 2009-07-20 | 2011-01-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming shallow trench isolation structure |
US8227339B2 (en) * | 2009-11-02 | 2012-07-24 | International Business Machines Corporation | Creation of vias and trenches with different depths |
CN102299112B (zh) * | 2010-06-23 | 2014-05-14 | 中芯国际集成电路制造(上海)有限公司 | 制作沟槽和浅沟槽隔离结构的方法 |
TW201216331A (en) * | 2010-10-05 | 2012-04-16 | Applied Materials Inc | Ultra high selectivity doped amorphous carbon strippable hardmask development and integration |
JP2013030582A (ja) | 2011-07-28 | 2013-02-07 | Elpida Memory Inc | 半導体装置の製造方法 |
KR101821413B1 (ko) * | 2011-09-26 | 2018-01-24 | 매그나칩 반도체 유한회사 | 소자분리구조물, 이를 포함하는 반도체 소자 및 그의 소자분리 구조물 제조 방법 |
CN102354679A (zh) * | 2011-10-25 | 2012-02-15 | 上海华力微电子有限公司 | 浅沟槽隔离的制作方法 |
US8841181B2 (en) | 2012-03-07 | 2014-09-23 | United Microelectronics Corp. | Method for fabricating semiconductor device and PMOS device fabricated by the method |
CN103376487B (zh) * | 2012-04-23 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 光栅的制作方法 |
JP2015079793A (ja) * | 2013-10-15 | 2015-04-23 | 東京エレクトロン株式会社 | プラズマ処理方法 |
KR20150107756A (ko) * | 2013-11-06 | 2015-09-23 | 맷슨 테크놀로지, 인크. | 수직 앤에이앤디 디바이스에 대한 새로운 마스크 제거 방법 |
CN104752152B (zh) * | 2013-12-29 | 2018-07-06 | 北京北方华创微电子装备有限公司 | 一种沟槽刻蚀方法及刻蚀装置 |
CN104022066B (zh) * | 2014-04-22 | 2017-01-04 | 上海华力微电子有限公司 | 一种形成浅沟槽隔离的方法 |
KR102171265B1 (ko) | 2014-07-08 | 2020-10-28 | 삼성전자 주식회사 | 금속 마스크를 이용한 패터닝 방법 및 그 패터닝 방법을 포함한 반도체 소자 제조방법 |
CN105428317B (zh) * | 2014-09-12 | 2018-09-18 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN108389830B (zh) * | 2017-02-03 | 2020-10-16 | 联华电子股份有限公司 | 掩模的制作方法 |
US10522557B2 (en) * | 2017-10-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Surface topography by forming spacer-like components |
CN109659271A (zh) * | 2019-01-22 | 2019-04-19 | 上海华虹宏力半导体制造有限公司 | 浅沟槽隔离结构的制作方法 |
CN116207039B (zh) * | 2023-04-28 | 2023-07-21 | 合肥晶合集成电路股份有限公司 | 半导体结构的制作方法以及半导体结构 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
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US6123862A (en) * | 1998-04-24 | 2000-09-26 | Micron Technology, Inc. | Method of forming high aspect ratio apertures |
US6159860A (en) * | 1998-07-17 | 2000-12-12 | Advanced Micro Devices, Inc. | Method for etching layers on a semiconductor wafer in a single etching chamber |
JP2000294626A (ja) * | 1999-04-07 | 2000-10-20 | Sony Corp | 半導体装置の製造方法 |
US6432832B1 (en) * | 1999-06-30 | 2002-08-13 | Lam Research Corporation | Method of improving the profile angle between narrow and wide features |
US6573030B1 (en) * | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6599437B2 (en) * | 2001-03-20 | 2003-07-29 | Applied Materials Inc. | Method of etching organic antireflection coating (ARC) layers |
KR20030001978A (ko) * | 2001-06-28 | 2003-01-08 | 주식회사 하이닉스반도체 | 반도체 소자의 콘택홀 형성방법 |
US6767824B2 (en) * | 2002-09-23 | 2004-07-27 | Padmapani C. Nallan | Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask |
KR20040055346A (ko) * | 2002-12-20 | 2004-06-26 | 아남반도체 주식회사 | 반도체 소자의 트렌치 형성 방법 |
US7132201B2 (en) * | 2003-09-12 | 2006-11-07 | Micron Technology, Inc. | Transparent amorphous carbon structure in semiconductor devices |
KR100510558B1 (ko) * | 2003-12-13 | 2005-08-26 | 삼성전자주식회사 | 패턴 형성 방법 |
US7208407B2 (en) * | 2004-06-30 | 2007-04-24 | Micron Technology, Inc. | Flash memory cells with reduced distances between cell elements |
US7271106B2 (en) * | 2004-08-31 | 2007-09-18 | Micron Technology, Inc. | Critical dimension control for integrated circuits |
US7067435B2 (en) * | 2004-09-29 | 2006-06-27 | Texas Instruments Incorporated | Method for etch-stop layer etching during damascene dielectric etching with low polymerization |
US20060105578A1 (en) * | 2004-11-12 | 2006-05-18 | Shih-Ping Hong | High-selectivity etching process |
-
2005
- 2005-11-12 KR KR1020050108315A patent/KR100801308B1/ko not_active IP Right Cessation
-
2006
- 2006-04-11 TW TW095112766A patent/TW200723440A/zh unknown
- 2006-04-11 US US11/403,065 patent/US20070111467A1/en not_active Abandoned
- 2006-05-10 JP JP2006131019A patent/JP2007134668A/ja active Pending
- 2006-09-12 CN CNA2006101275539A patent/CN1963999A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
KR100801308B1 (ko) | 2008-02-11 |
CN1963999A (zh) | 2007-05-16 |
KR20070050737A (ko) | 2007-05-16 |
JP2007134668A (ja) | 2007-05-31 |
US20070111467A1 (en) | 2007-05-17 |
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