TW200720482A - Etch features with reduced line edge roughness - Google Patents

Etch features with reduced line edge roughness

Info

Publication number
TW200720482A
TW200720482A TW095128867A TW95128867A TW200720482A TW 200720482 A TW200720482 A TW 200720482A TW 095128867 A TW095128867 A TW 095128867A TW 95128867 A TW95128867 A TW 95128867A TW 200720482 A TW200720482 A TW 200720482A
Authority
TW
Taiwan
Prior art keywords
layer
photoresist
features
line edge
reduced line
Prior art date
Application number
TW095128867A
Other languages
English (en)
Other versions
TWI432605B (zh
Inventor
S M Reza Sadjadi
Eric A Hudson
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200720482A publication Critical patent/TW200720482A/zh
Application granted granted Critical
Publication of TWI432605B publication Critical patent/TWI432605B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
TW095128867A 2005-08-18 2006-08-07 具有降低之線邊緣粗糙度的蝕刻特徵 TWI432605B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/208,098 US7273815B2 (en) 2005-08-18 2005-08-18 Etch features with reduced line edge roughness

Publications (2)

Publication Number Publication Date
TW200720482A true TW200720482A (en) 2007-06-01
TWI432605B TWI432605B (zh) 2014-04-01

Family

ID=37758048

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095128867A TWI432605B (zh) 2005-08-18 2006-08-07 具有降低之線邊緣粗糙度的蝕刻特徵

Country Status (6)

Country Link
US (2) US7273815B2 (zh)
JP (2) JP5250418B2 (zh)
KR (1) KR101257532B1 (zh)
CN (2) CN101292197A (zh)
TW (1) TWI432605B (zh)
WO (1) WO2007021540A2 (zh)

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US7273815B2 (en) * 2005-08-18 2007-09-25 Lam Research Corporation Etch features with reduced line edge roughness
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CN105719965A (zh) * 2014-12-04 2016-06-29 北京北方微电子基地设备工艺研究中心有限责任公司 二氧化硅基片的刻蚀方法和刻蚀设备
CN106158595B (zh) * 2015-04-20 2019-03-12 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
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WO2017111822A1 (en) * 2015-12-24 2017-06-29 Intel Corporation Pitch division using directed self-assembly
US9852924B1 (en) * 2016-08-24 2017-12-26 Lam Research Corporation Line edge roughness improvement with sidewall sputtering
CN107527797B (zh) * 2017-08-16 2022-04-05 江苏鲁汶仪器有限公司 一种改善光刻胶线条边缘粗糙度的方法
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Also Published As

Publication number Publication date
TWI432605B (zh) 2014-04-01
JP2013110437A (ja) 2013-06-06
US7273815B2 (en) 2007-09-25
CN103105744A (zh) 2013-05-15
JP5250418B2 (ja) 2013-07-31
WO2007021540A3 (en) 2007-12-21
KR20080046665A (ko) 2008-05-27
KR101257532B1 (ko) 2013-04-23
US20070284690A1 (en) 2007-12-13
WO2007021540A2 (en) 2007-02-22
JP2009505421A (ja) 2009-02-05
CN101292197A (zh) 2008-10-22
US20070042607A1 (en) 2007-02-22

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