TW200716793A - Leveler compounds - Google Patents

Leveler compounds

Info

Publication number
TW200716793A
TW200716793A TW095132843A TW95132843A TW200716793A TW 200716793 A TW200716793 A TW 200716793A TW 095132843 A TW095132843 A TW 095132843A TW 95132843 A TW95132843 A TW 95132843A TW 200716793 A TW200716793 A TW 200716793A
Authority
TW
Taiwan
Prior art keywords
leveling agents
metal
leveler compounds
plating baths
leveler
Prior art date
Application number
TW095132843A
Other languages
English (en)
Other versions
TWI328622B (en
Inventor
Deyan Wang
Robert D Mikkola
George G Barclay
Original Assignee
Rohm & Haas Elect Mat
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat filed Critical Rohm & Haas Elect Mat
Publication of TW200716793A publication Critical patent/TW200716793A/zh
Application granted granted Critical
Publication of TWI328622B publication Critical patent/TWI328622B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
    • C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L23/04—Homopolymers or copolymers of ethene
    • C08L23/08—Copolymers of ethene
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C25D3/40—Electroplating: Baths therefor from solutions of copper from cyanide baths, e.g. with Cu+
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Toxicology (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
TW095132843A 2005-09-30 2006-09-06 Leveler compounds TWI328622B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US72274705P 2005-09-30 2005-09-30

Publications (2)

Publication Number Publication Date
TW200716793A true TW200716793A (en) 2007-05-01
TWI328622B TWI328622B (en) 2010-08-11

Family

ID=37958663

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095132843A TWI328622B (en) 2005-09-30 2006-09-06 Leveler compounds

Country Status (6)

Country Link
US (2) US8262891B2 (zh)
EP (1) EP1798314B1 (zh)
JP (1) JP4812582B2 (zh)
KR (1) KR101295196B1 (zh)
CN (1) CN1940146B (zh)
TW (1) TWI328622B (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575116B (zh) * 2009-06-17 2017-03-21 諾菲勒斯系統公司 用於增進鑲嵌金屬填充之濕潤預處理裝置
US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US9828688B2 (en) 2009-06-17 2017-11-28 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
TWI670398B (zh) * 2017-07-10 2019-09-01 Rohm And Haas Electronic Materials Llc 具有陽離子聚合物的鎳電鍍組合物及電鍍鎳的方法

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds
JP4816901B2 (ja) * 2005-11-21 2011-11-16 上村工業株式会社 電気銅めっき浴
TWI441955B (zh) 2007-05-21 2014-06-21 Uyemura C & Co Ltd Electroplating copper bath
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
CA2674403C (en) * 2007-12-18 2012-06-05 Integran Technologies Inc. Method for preparing polycrystalline structures having improved mechanical and physical properties
EP2130948B1 (de) * 2008-06-02 2010-12-22 ATOTECH Deutschland GmbH Pyrophosphathaltiges Bad zur cyanidfreien Abscheidung von Kupfer-Zinn-Legierungen
JP5525762B2 (ja) * 2008-07-01 2014-06-18 上村工業株式会社 無電解めっき液及びそれを用いた無電解めっき方法、並びに配線基板の製造方法
US10221496B2 (en) 2008-11-26 2019-03-05 Macdermid Enthone Inc. Copper filling of through silicon vias
US8388824B2 (en) * 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
WO2011135673A1 (ja) * 2010-04-27 2011-11-03 荏原ユージライト株式会社 新規化合物およびその用途
JP2012092366A (ja) * 2010-10-25 2012-05-17 Imec 銅の電着方法
JP5731802B2 (ja) * 2010-11-25 2015-06-10 ローム・アンド・ハース電子材料株式会社 金めっき液
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
US8454815B2 (en) * 2011-10-24 2013-06-04 Rohm And Haas Electronics Materials Llc Plating bath and method
JP5851233B2 (ja) * 2011-12-22 2016-02-03 ローム・アンド・ハース電子材料株式会社 電解銅めっき液及び電解銅めっき方法
JP5706386B2 (ja) * 2012-10-16 2015-04-22 住友金属鉱山株式会社 ２層フレキシブル基板、並びに２層フレキシブル基板を基材としたプリント配線板
US20140262794A1 (en) * 2013-03-15 2014-09-18 Applied Materials, Inc. Electrochemical deposition processes for semiconductor wafers
US9988336B2 (en) 2014-03-18 2018-06-05 Mayo Foundation For Medical Education And Research Gaseous F-18 technologies
CN104005061B (zh) * 2014-06-05 2016-05-18 中节能太阳能科技有限公司 一种用于太阳能电池前电极电镀铜的负整平剂
US9758692B2 (en) 2014-07-25 2017-09-12 Tommie Copper Ip, Inc. Article with reactive metals bound to its surface and method of application
US9725816B2 (en) 2014-12-30 2017-08-08 Rohm And Haas Electronic Materials Llc Amino sulfonic acid based polymers for copper electroplating
US9611560B2 (en) 2014-12-30 2017-04-04 Rohm And Haas Electronic Materials Llc Sulfonamide based polymers for copper electroplating
US9783905B2 (en) 2014-12-30 2017-10-10 Rohm and Haas Electronic Mateirals LLC Reaction products of amino acids and epoxies
US9870995B2 (en) * 2015-06-18 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Formation of copper layer structure with self anneal strain improvement
KR101657675B1 (ko) * 2015-09-25 2016-09-22 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
JP6733314B2 (ja) * 2015-09-29 2020-07-29 三菱マテリアル株式会社 高純度銅電解精錬用添加剤と高純度銅製造方法
EP3359709B1 (en) * 2015-10-08 2020-07-29 Rohm and Haas Electronic Materials LLC Copper electroplating baths containing compounds of reaction products of amines and polyacrylamides
KR101733141B1 (ko) * 2016-03-18 2017-05-08 한국생산기술연구원 고평탄 구리도금막 형성을 위한 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해구리 도금액
CN107278058A (zh) * 2016-04-08 2017-10-20 东莞市斯坦得电子材料有限公司 一种用于印制线路板埋孔、盲孔填孔镀铜的工艺
KR101693595B1 (ko) * 2016-04-21 2017-01-17 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
KR101693588B1 (ko) * 2016-04-21 2017-01-17 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금용 유기첨가제 및 이를 포함하는 전해 구리 도금액
KR101693597B1 (ko) * 2016-04-21 2017-01-06 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금액을 이용한 전해 구리 도금 방법
KR101693586B1 (ko) * 2016-04-21 2017-01-06 한국생산기술연구원 2종의 평탄제를 포함하는 전해 구리 도금액을 이용한 전해 구리 도금 방법
KR102505102B1 (ko) * 2016-06-30 2023-03-03 솔브레인 주식회사 금속 도금 조성물 및 이를 이용한 금속 도금 방법
WO2018057490A1 (en) * 2016-09-22 2018-03-29 Macdermid Enthone Inc. Copper plating method and composition for semiconductor substrates
CN106757191B (zh) * 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 一种具有高择优取向的铜晶体颗粒及其制备方法
KR102647950B1 (ko) * 2017-11-20 2024-03-14 바스프 에스이 레벨링제를 포함하는 코발트 전기도금용 조성물
JP6984352B2 (ja) * 2017-11-28 2021-12-17 東洋インキＳｃホールディングス株式会社 積層体の製造方法、および積層体
JP7092183B2 (ja) * 2018-02-22 2022-06-28 コニカミノルタ株式会社 パターン形成方法
CN111108234B (zh) * 2018-08-28 2023-11-17 株式会社杰希优 硫酸铜镀液和使用了其的硫酸铜镀敷方法
JP6899062B1 (ja) * 2020-05-18 2021-07-07 深▲せん▼市創智成功科技有限公司 Ｉｃボードのスルーホールを充填するための電気銅めっき液およびその電気めっき方法
CN114016094B (zh) * 2021-09-29 2022-11-18 深圳市励高表面处理材料有限公司 一种整平剂及其制备方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE322956B (zh) * 1966-08-20 1970-04-20 Schering Ag
DE2002756A1 (de) * 1970-01-22 1971-07-29 Basf Ag Kathodisch abscheidbare UEberzugsmittel
US3843667A (en) * 1973-09-12 1974-10-22 M Cupery N-imidazole compounds and their complex metal derivatives
US4009087A (en) * 1974-11-21 1977-02-22 M&T Chemicals Inc. Electrodeposition of copper
US4038161A (en) * 1976-03-05 1977-07-26 R. O. Hull & Company, Inc. Acid copper plating and additive composition therefor
US5294354A (en) * 1992-06-05 1994-03-15 Texaco Inc. Combining dispersant viscosity index improver and detergent additives for lubricants
US5840170A (en) * 1992-11-30 1998-11-24 Gould Electronics Inc. Method for inhibiting the electrodeposition of organic particulate matter on copper foil
US5607570A (en) * 1994-10-31 1997-03-04 Rohbani; Elias Electroplating solution
JP3909920B2 (ja) 1997-07-24 2007-04-25 メック株式会社 銅および銅合金の表面処理法
US6024857A (en) * 1997-10-08 2000-02-15 Novellus Systems, Inc. Electroplating additive for filling sub-micron features
DE19758121C2 (de) * 1997-12-17 2000-04-06 Atotech Deutschland Gmbh Wäßriges Bad und Verfahren zum elektrolytischen Abscheiden von Kupferschichten
US6183622B1 (en) * 1998-07-13 2001-02-06 Enthone-Omi, Inc. Ductility additives for electrorefining and electrowinning
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
DE19930060A1 (de) * 1999-06-30 2001-01-11 Basf Coatings Ag Elektrotauchlackbad mit wasserlöslichem Polyvinylalkohol(co)polymeren
JP2001073182A (ja) * 1999-07-15 2001-03-21 Boc Group Inc:The 改良された酸性銅電気メッキ用溶液
US6420441B1 (en) * 1999-10-01 2002-07-16 Shipley Company, L.L.C. Porous materials
KR100366631B1 (ko) * 2000-09-27 2003-01-09 삼성전자 주식회사 폴리비닐피롤리돈을 포함하는 구리도금 전해액 및 이를이용한 반도체 소자의 구리배선용 전기도금방법
EP1197587B1 (en) * 2000-10-13 2006-09-20 Shipley Co. L.L.C. Seed layer repair and electroplating bath
US6610192B1 (en) * 2000-11-02 2003-08-26 Shipley Company, L.L.C. Copper electroplating
US6903175B2 (en) * 2001-03-26 2005-06-07 Shipley Company, L.L.C. Polymer synthesis and films therefrom
US6787601B2 (en) * 2001-03-26 2004-09-07 Shipley Company, L.L.C. Polymer synthesis
US7316772B2 (en) * 2002-03-05 2008-01-08 Enthone Inc. Defect reduction in electrodeposited copper for semiconductor applications
US8002962B2 (en) * 2002-03-05 2011-08-23 Enthone Inc. Copper electrodeposition in microelectronics
US6676823B1 (en) * 2002-03-18 2004-01-13 Taskem, Inc. High speed acid copper plating
DE10223957B4 (de) * 2002-05-31 2006-12-21 Advanced Micro Devices, Inc., Sunnyvale Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht
EP1371757A1 (en) * 2002-06-03 2003-12-17 Shipley Co. L.L.C. Leveler compound for copper plating baths
JP2004346422A (ja) * 2003-05-23 2004-12-09 Rohm & Haas Electronic Materials Llc めっき方法
JP2005029818A (ja) * 2003-07-09 2005-02-03 Ebara Corp めっき方法
JP2005139516A (ja) * 2003-11-07 2005-06-02 Ebara Corp めっき方法およびめっき装置
US20050126919A1 (en) * 2003-11-07 2005-06-16 Makoto Kubota Plating method, plating apparatus and a method of forming fine circuit wiring
TW200613586A (en) * 2004-07-22 2006-05-01 Rohm & Haas Elect Mat Leveler compounds
TWI328622B (en) 2005-09-30 2010-08-11 Rohm & Haas Elect Mat Leveler compounds

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI575116B (zh) * 2009-06-17 2017-03-21 諾菲勒斯系統公司 用於增進鑲嵌金屬填充之濕潤預處理裝置
US9677188B2 (en) 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US9828688B2 (en) 2009-06-17 2017-11-28 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9852913B2 (en) 2009-06-17 2017-12-26 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
US10301738B2 (en) 2009-06-17 2019-05-28 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US10840101B2 (en) 2009-06-17 2020-11-17 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
US9613833B2 (en) 2013-02-20 2017-04-04 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US10128102B2 (en) 2013-02-20 2018-11-13 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
TWI670398B (zh) * 2017-07-10 2019-09-01 Rohm And Haas Electronic Materials Llc 具有陽離子聚合物的鎳電鍍組合物及電鍍鎳的方法

Also Published As

Publication number Publication date
JP4812582B2 (ja) 2011-11-09
EP1798314B1 (en) 2011-08-24
JP2007146285A (ja) 2007-06-14
US8262891B2 (en) 2012-09-11
EP1798314A1 (en) 2007-06-20
US8506788B2 (en) 2013-08-13
CN1940146A (zh) 2007-04-04
TWI328622B (en) 2010-08-11
KR20070037349A (ko) 2007-04-04
US20130001088A1 (en) 2013-01-03
KR101295196B1 (ko) 2013-08-12
CN1940146B (zh) 2010-05-12
US20070084732A1 (en) 2007-04-19

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