TW200715533A - Semiconductor constructions, memory cells, dram arrays, electronic systems, methods of forming semiconductor constructions, and methods of forming dram arrays - Google Patents

Semiconductor constructions, memory cells, dram arrays, electronic systems, methods of forming semiconductor constructions, and methods of forming dram arrays

Info

Publication number
TW200715533A
TW200715533A TW095122883A TW95122883A TW200715533A TW 200715533 A TW200715533 A TW 200715533A TW 095122883 A TW095122883 A TW 095122883A TW 95122883 A TW95122883 A TW 95122883A TW 200715533 A TW200715533 A TW 200715533A
Authority
TW
Taiwan
Prior art keywords
methods
forming
dram arrays
semiconductor constructions
conductive layers
Prior art date
Application number
TW095122883A
Other languages
English (en)
Other versions
TWI307160B (en
Inventor
Werner Juengling
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200715533A publication Critical patent/TW200715533A/zh
Application granted granted Critical
Publication of TWI307160B publication Critical patent/TWI307160B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/91—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by depositing layers, e.g. by depositing alternating conductive and insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW095122883A 2005-06-27 2006-06-26 Semiconductor constructions, memory cells, dram arrays, electronic systems, methods of forming semiconductor constructions, and methods of forming dram arrays TWI307160B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/168,699 US7459362B2 (en) 2005-06-27 2005-06-27 Methods of forming DRAM arrays

Publications (2)

Publication Number Publication Date
TW200715533A true TW200715533A (en) 2007-04-16
TWI307160B TWI307160B (en) 2009-03-01

Family

ID=37441326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122883A TWI307160B (en) 2005-06-27 2006-06-26 Semiconductor constructions, memory cells, dram arrays, electronic systems, methods of forming semiconductor constructions, and methods of forming dram arrays

Country Status (7)

Country Link
US (2) US7459362B2 (zh)
EP (1) EP1920455A2 (zh)
JP (1) JP2008547221A (zh)
KR (1) KR101031737B1 (zh)
CN (2) CN101208775B (zh)
TW (1) TWI307160B (zh)
WO (1) WO2007001853A2 (zh)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
TWI384587B (zh) * 2008-07-09 2013-02-01 Micron Technology Inc 形成複數個電容器之方法
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials

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US8852851B2 (en) 2006-07-10 2014-10-07 Micron Technology, Inc. Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
US7666797B2 (en) * 2006-08-17 2010-02-23 Micron Technology, Inc. Methods for forming semiconductor constructions, and methods for selectively etching silicon nitride relative to conductive material
US7682924B2 (en) 2007-08-13 2010-03-23 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8388851B2 (en) 2008-01-08 2013-03-05 Micron Technology, Inc. Capacitor forming methods
US7800965B2 (en) * 2008-03-10 2010-09-21 Micron Technology, Inc. Digit line equilibration using access devices at the edge of sub-arrays
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US7989307B2 (en) 2008-05-05 2011-08-02 Micron Technology, Inc. Methods of forming isolated active areas, trenches, and conductive lines in semiconductor structures and semiconductor structures including the same
KR100977716B1 (ko) * 2008-05-21 2010-08-24 주식회사 하이닉스반도체 반도체 장치 및 그 제조방법
US10151981B2 (en) 2008-05-22 2018-12-11 Micron Technology, Inc. Methods of forming structures supported by semiconductor substrates
US8247302B2 (en) 2008-12-04 2012-08-21 Micron Technology, Inc. Methods of fabricating substrates
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
US8796155B2 (en) 2008-12-04 2014-08-05 Micron Technology, Inc. Methods of fabricating substrates
JP5679628B2 (ja) * 2008-12-16 2015-03-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US8268543B2 (en) 2009-03-23 2012-09-18 Micron Technology, Inc. Methods of forming patterns on substrates
US9330934B2 (en) 2009-05-18 2016-05-03 Micron Technology, Inc. Methods of forming patterns on substrates
TWI396259B (zh) * 2009-08-28 2013-05-11 Inotera Memories Inc 動態隨機存取記憶體之凹溝渠通道之自我對準方法
US8872247B2 (en) 2009-11-04 2014-10-28 Micron Technology, Inc. Memory cells having a folded digit line architecture
US8119476B2 (en) * 2009-12-24 2012-02-21 Samsung Electronics Co., Ltd. Methods of forming integrated circuit capacitors having sidewall supports and capacitors formed thereby
JP2012015355A (ja) * 2010-07-01 2012-01-19 Toshiba Corp 半導体装置及びその製造方法
US8518788B2 (en) 2010-08-11 2013-08-27 Micron Technology, Inc. Methods of forming a plurality of capacitors
US8216939B2 (en) 2010-08-20 2012-07-10 Micron Technology, Inc. Methods of forming openings
US8455341B2 (en) 2010-09-02 2013-06-04 Micron Technology, Inc. Methods of forming features of integrated circuitry
US8575032B2 (en) 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US9076680B2 (en) 2011-10-18 2015-07-07 Micron Technology, Inc. Integrated circuitry, methods of forming capacitors, and methods of forming integrated circuitry comprising an array of capacitors and circuitry peripheral to the array
US8946043B2 (en) 2011-12-21 2015-02-03 Micron Technology, Inc. Methods of forming capacitors
US9177794B2 (en) 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
US8629048B1 (en) 2012-07-06 2014-01-14 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8652926B1 (en) 2012-07-26 2014-02-18 Micron Technology, Inc. Methods of forming capacitors
KR102371315B1 (ko) * 2015-06-24 2022-03-07 인텔 코포레이션 교대하는 전도성 라인들을 갖는 라이브러리 셀들을 이용한 집적 회로 레이아웃
KR20170011218A (ko) * 2015-07-22 2017-02-02 삼성전자주식회사 커패시터 구조물 및 이의 형성 방법, 및 상기 커패시터 구조물을 포함하는 반도체 장치
US9553048B1 (en) * 2015-09-04 2017-01-24 Kabushiki Kaisha Toshiba Semiconductor device and manufacturing method of semiconductor device
KR101748949B1 (ko) * 2015-09-18 2017-06-21 서울대학교산학협력단 반도체 메모리 소자 및 이의 제조 방법
US10134754B2 (en) 2017-03-13 2018-11-20 Macronix International Co., Ltd. Method for forming a 3-D memory device and the 3-D memory device formed thereby
KR102397893B1 (ko) * 2017-04-17 2022-05-16 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
US10163480B1 (en) 2017-07-27 2018-12-25 Micron Technology, Inc. Periphery fill and localized capacitance
US10032496B1 (en) 2017-07-27 2018-07-24 Micron Technology, Inc. Variable filter capacitance
US10361158B2 (en) * 2017-08-29 2019-07-23 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch
US10347322B1 (en) * 2018-02-20 2019-07-09 Micron Technology, Inc. Apparatuses having memory strings compared to one another through a sense amplifier
US11335626B2 (en) * 2020-09-15 2022-05-17 Micron Technology, Inc. Integrated assemblies and methods of forming integrated assemblies
CN112928069B (zh) * 2021-02-05 2023-02-28 长鑫存储技术有限公司 半导体结构的制作方法及半导体结构

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JP3164021B2 (ja) * 1997-06-12 2001-05-08 日本電気株式会社 半導体記憶装置の製造方法
US6025624A (en) * 1998-06-19 2000-02-15 Micron Technology, Inc. Shared length cell for improved capacitance
KR100563735B1 (ko) 1999-03-29 2006-03-28 주식회사 하이닉스반도체 반도체 소자의 전하저장전극 형성 방법
JP4060572B2 (ja) * 2001-11-06 2008-03-12 株式会社東芝 半導体記憶装置及びその製造方法
US6914286B2 (en) * 2002-06-27 2005-07-05 Samsung Electronics Co., Ltd. Semiconductor memory devices using sidewall spacers
FR2844883B1 (fr) * 2002-09-23 2004-11-26 St Microelectronics Sa Procede pour determiner une capacite electrique d'un composant de circuit, et procede pour dimensionner un tel composant
KR20040059443A (ko) * 2002-12-30 2004-07-05 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
JP3733121B2 (ja) * 2003-03-27 2006-01-11 株式会社ディーブイイー 安定化電源回路
US7067385B2 (en) * 2003-09-04 2006-06-27 Micron Technology, Inc. Support for vertically oriented capacitors during the formation of a semiconductor device
US7282757B2 (en) * 2003-10-20 2007-10-16 Taiwan Semiconductor Manufacturing Company, Ltd. MIM capacitor structure and method of manufacture
KR100545866B1 (ko) * 2004-04-27 2006-01-24 삼성전자주식회사 커패시터 및 그 제조 방법
US7320911B2 (en) * 2004-12-06 2008-01-22 Micron Technology, Inc. Methods of forming pluralities of capacitors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10515801B2 (en) 2007-06-04 2019-12-24 Micron Technology, Inc. Pitch multiplication using self-assembling materials
TWI384587B (zh) * 2008-07-09 2013-02-01 Micron Technology Inc 形成複數個電容器之方法

Also Published As

Publication number Publication date
EP1920455A2 (en) 2008-05-14
US20060289914A1 (en) 2006-12-28
CN101208775A (zh) 2008-06-25
CN101826561B (zh) 2013-02-27
KR20080019068A (ko) 2008-02-29
US7459362B2 (en) 2008-12-02
US20070181929A1 (en) 2007-08-09
JP2008547221A (ja) 2008-12-25
KR101031737B1 (ko) 2011-05-09
TWI307160B (en) 2009-03-01
WO2007001853A3 (en) 2007-10-11
CN101208775B (zh) 2010-05-19
US7573088B2 (en) 2009-08-11
CN101826561A (zh) 2010-09-08
WO2007001853A2 (en) 2007-01-04

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