CN100463185C - 动态随机存取存储器及其制造方法 - Google Patents
动态随机存取存储器及其制造方法 Download PDFInfo
- Publication number
- CN100463185C CN100463185C CNB2005100920387A CN200510092038A CN100463185C CN 100463185 C CN100463185 C CN 100463185C CN B2005100920387 A CNB2005100920387 A CN B2005100920387A CN 200510092038 A CN200510092038 A CN 200510092038A CN 100463185 C CN100463185 C CN 100463185C
- Authority
- CN
- China
- Prior art keywords
- dielectric layer
- random access
- access memory
- dynamic random
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000010410 layer Substances 0.000 claims description 152
- 238000000034 method Methods 0.000 claims description 80
- 239000004020 conductor Substances 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 29
- 239000011241 protective layer Substances 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 238000003701 mechanical milling Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- CBFPXJNABCOVCA-UHFFFAOYSA-N [B].[P].CCO[Si](OCC)(OCC)OCC Chemical compound [B].[P].CCO[Si](OCC)(OCC)OCC CBFPXJNABCOVCA-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims 1
- 238000000059 patterning Methods 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- CVOFKRWYWCSDMA-UHFFFAOYSA-N 2-chloro-n-(2,6-diethylphenyl)-n-(methoxymethyl)acetamide;2,6-dinitro-n,n-dipropyl-4-(trifluoromethyl)aniline Chemical compound CCC1=CC=CC(CC)=C1N(COC)C(=O)CCl.CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O CVOFKRWYWCSDMA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100920387A CN100463185C (zh) | 2005-08-16 | 2005-08-16 | 动态随机存取存储器及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100920387A CN100463185C (zh) | 2005-08-16 | 2005-08-16 | 动态随机存取存储器及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1917211A CN1917211A (zh) | 2007-02-21 |
CN100463185C true CN100463185C (zh) | 2009-02-18 |
Family
ID=37738153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100920387A Active CN100463185C (zh) | 2005-08-16 | 2005-08-16 | 动态随机存取存储器及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN100463185C (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107808875B (zh) * | 2016-09-08 | 2020-01-31 | 华邦电子股份有限公司 | 电容器结构及其制造方法 |
CN108269789B (zh) * | 2016-12-30 | 2022-05-03 | 联华电子股份有限公司 | 电容器结构及其制作方法 |
CN108962824B (zh) * | 2017-05-17 | 2019-08-13 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN109755243B (zh) * | 2017-11-02 | 2021-11-02 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN112490192B (zh) * | 2019-09-12 | 2023-03-17 | 夏泰鑫半导体(青岛)有限公司 | 动态随机存取存储器及其制备方法 |
CN113078115B (zh) * | 2021-03-26 | 2022-06-24 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677221A (en) * | 1996-06-19 | 1997-10-14 | Vanguard International Semiconductor Corp. | Method of manufacture DRAM capacitor with reduced layout area |
US5821141A (en) * | 1998-01-12 | 1998-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for forming a cylindrical capacitor in DRAM having pin plug profile |
US5869861A (en) * | 1995-09-11 | 1999-02-09 | Vanguard International Semiconductor Corporation | Coaxial capacitor for DRAM memory cell |
US6277688B1 (en) * | 2000-06-30 | 2001-08-21 | Vanguard International Semiconductor Corporation | Method of manufacturing a DRAM capacitor with increased electrode surface area |
US6620685B2 (en) * | 2001-03-13 | 2003-09-16 | Samsung Electronics, Co., Ltd | Method for fabricating of semiconductor memory device having a metal plug or a landing pad |
JP2004342787A (ja) * | 2003-05-15 | 2004-12-02 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
-
2005
- 2005-08-16 CN CNB2005100920387A patent/CN100463185C/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5869861A (en) * | 1995-09-11 | 1999-02-09 | Vanguard International Semiconductor Corporation | Coaxial capacitor for DRAM memory cell |
US5677221A (en) * | 1996-06-19 | 1997-10-14 | Vanguard International Semiconductor Corp. | Method of manufacture DRAM capacitor with reduced layout area |
US5821141A (en) * | 1998-01-12 | 1998-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for forming a cylindrical capacitor in DRAM having pin plug profile |
US6277688B1 (en) * | 2000-06-30 | 2001-08-21 | Vanguard International Semiconductor Corporation | Method of manufacturing a DRAM capacitor with increased electrode surface area |
US6620685B2 (en) * | 2001-03-13 | 2003-09-16 | Samsung Electronics, Co., Ltd | Method for fabricating of semiconductor memory device having a metal plug or a landing pad |
JP2004342787A (ja) * | 2003-05-15 | 2004-12-02 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1917211A (zh) | 2007-02-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5677221A (en) | Method of manufacture DRAM capacitor with reduced layout area | |
US20050136594A1 (en) | Method for forming bit-line of semiconductor device | |
CN115835626B (zh) | 3d堆叠的半导体器件、3d存储器及其制备方法、电子设备 | |
US5851875A (en) | Process for forming capacitor array structure for semiconductor devices | |
US7285462B2 (en) | Semiconductor memory device with trench-type stacked cell capacitors and method for manufacturing the same | |
WO2007001853A2 (en) | Method of forming stacked capacitor dram cells | |
CN100463185C (zh) | 动态随机存取存储器及其制造方法 | |
US5874757A (en) | Dual-packed capacitor DRAM cell structure | |
CN110957304A (zh) | 一种电容器结构及其制造方法 | |
US5851878A (en) | Method of forming a rugged polysilicon fin structure in DRAM | |
US6097055A (en) | Capacitor and method for fabricating the same | |
CN114530419A (zh) | 存储器的形成方法及存储器 | |
US6066541A (en) | Method for fabricating a cylindrical capacitor | |
CN1123928C (zh) | 动态随机存取存储器电容器及其下电极的制造方法 | |
US6207498B1 (en) | Method of fabricating a coronary-type capacitor in an integrated circuit | |
US6146937A (en) | Method of forming a DRAM device utilizing a sacrificial doped oxide layer | |
CN100544002C (zh) | 内存结构及其制备方法 | |
US6100135A (en) | Method of forming a crown-fin shaped capacitor for a high density DRAM cell | |
US6232648B1 (en) | Extended self-aligned crown-shaped rugged capacitor for high density DRAM cells | |
US6265263B1 (en) | Method for forming a DRAM capacitor with porous storage node and rugged sidewalls | |
JPH10242417A (ja) | 半導体装置及びその製造方法 | |
US20110057240A1 (en) | Semiconductor device and method of manufacturing the same | |
US6180483B1 (en) | Structure and fabrication method for multiple crown capacitor | |
KR20140028946A (ko) | 반도체 소자 및 그 제조 방법 | |
US5744390A (en) | Method of fabricating a dram cell with a plurality of vertical extensions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: POWERCHIP TECHNOLOGY CO., LTD. Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
|
CP03 | Change of name, title or address |
Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu City, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |