TW200710471A - Array substrate for display device - Google Patents

Array substrate for display device

Info

Publication number
TW200710471A
TW200710471A TW095125841A TW95125841A TW200710471A TW 200710471 A TW200710471 A TW 200710471A TW 095125841 A TW095125841 A TW 095125841A TW 95125841 A TW95125841 A TW 95125841A TW 200710471 A TW200710471 A TW 200710471A
Authority
TW
Taiwan
Prior art keywords
display device
metal layer
array substrate
metal
substrate
Prior art date
Application number
TW095125841A
Other languages
English (en)
Inventor
In-Sung Lee
Neung-Ho Cho
Dong-Hoon Lee
Youn-Soo Choi
Ho-Geun Choi
Jin Chel Choi
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050065828A external-priority patent/KR20070010863A/ko
Priority claimed from KR1020050100045A external-priority patent/KR20070044110A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200710471A publication Critical patent/TW200710471A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
TW095125841A 2005-07-20 2006-07-14 Array substrate for display device TW200710471A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020050065828A KR20070010863A (ko) 2005-07-20 2005-07-20 어레이 기판, 어레이 기판의 제조방법 및 상기 어레이기판을 갖는 표시장치
KR1020050100045A KR20070044110A (ko) 2005-10-24 2005-10-24 어레이 기판의 제조방법

Publications (1)

Publication Number Publication Date
TW200710471A true TW200710471A (en) 2007-03-16

Family

ID=37678697

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095125841A TW200710471A (en) 2005-07-20 2006-07-14 Array substrate for display device

Country Status (4)

Country Link
US (1) US20070019122A1 (zh)
JP (1) JP5008916B2 (zh)
CN (1) CN102097369B (zh)
TW (1) TW200710471A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786497B2 (en) 2007-05-30 2010-08-31 Au Optronics Corporation Pixel structure of LCD and fabrication method thereof
TWI675231B (zh) * 2018-03-30 2019-10-21 友達光電股份有限公司 顯示裝置

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090011704A (ko) * 2007-07-27 2009-02-02 삼성전자주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR100975204B1 (ko) * 2008-08-04 2010-08-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5210915B2 (ja) * 2009-02-09 2013-06-12 株式会社東芝 半導体装置の製造方法
CN102483549A (zh) * 2009-08-21 2012-05-30 夏普株式会社 液晶显示装置和液晶显示装置的制造方法
KR101731914B1 (ko) * 2010-12-10 2017-05-04 삼성디스플레이 주식회사 액정 표시 장치 및 이의 제조 방법
US9545324B2 (en) 2013-03-13 2017-01-17 Cook Medical Technologies Llc Pre-loaded iliac branch device and methods of deployment
KR102275519B1 (ko) * 2013-12-16 2021-07-12 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
KR102349281B1 (ko) * 2015-10-28 2022-01-11 삼성디스플레이 주식회사 디스플레이 장치
WO2018225195A1 (ja) * 2017-06-07 2018-12-13 三菱電機株式会社 半導体装置の製造方法
KR20190083027A (ko) * 2018-01-02 2019-07-11 삼성디스플레이 주식회사 표시패널 및 그 제조방법
US11889721B2 (en) * 2019-07-16 2024-01-30 Ordos Yuansheng Optoelectronics Co., Ltd. Display substrate, manufacturing method thereof and display device
CN110928085B (zh) * 2019-11-26 2021-01-15 Tcl华星光电技术有限公司 阵列基板及显示面板
KR20230103603A (ko) * 2021-12-31 2023-07-07 엘지디스플레이 주식회사 액정 표시 장치

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04185693A (ja) * 1990-11-21 1992-07-02 Hitachi Ltd 抵抗膜のエッチング液組成物及びそれを使用したエッチング方法
JPH04188770A (ja) * 1990-11-22 1992-07-07 Casio Comput Co Ltd 薄膜トランジスタ
DE69319760T2 (de) * 1992-02-21 1999-02-11 Toshiba Kawasaki Kk Flüssigkristallanzeigevorrichtung
EP0589478B1 (en) * 1992-09-25 1999-11-17 Sony Corporation Liquid crystal display device
JP3204473B2 (ja) * 1993-03-19 2001-09-04 ホーヤ株式会社 クロム膜製電極の形成方法
JPH07176500A (ja) * 1993-12-17 1995-07-14 Nec Corp エッチング方法
US5413952A (en) * 1994-02-02 1995-05-09 Motorola, Inc. Direct wafer bonded structure method of making
JP3225772B2 (ja) * 1995-01-30 2001-11-05 株式会社日立製作所 液晶表示装置の製造方法
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
KR100241287B1 (ko) * 1996-09-10 2000-02-01 구본준 액정표시소자 제조방법
JP2988399B2 (ja) * 1996-11-28 1999-12-13 日本電気株式会社 アクティブマトリクス基板
JPH10303142A (ja) * 1997-04-22 1998-11-13 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6297519B1 (en) * 1998-08-28 2001-10-02 Fujitsu Limited TFT substrate with low contact resistance and damage resistant terminals
JP4184522B2 (ja) * 1999-01-29 2008-11-19 富士通株式会社 薄膜トランジスタ基板
JP2000206550A (ja) * 1999-01-13 2000-07-28 Hitachi Ltd 液晶表示装置
JP3362008B2 (ja) * 1999-02-23 2003-01-07 シャープ株式会社 液晶表示装置およびその製造方法
US6380559B1 (en) * 1999-06-03 2002-04-30 Samsung Electronics Co., Ltd. Thin film transistor array substrate for a liquid crystal display
KR100766493B1 (ko) * 2001-02-12 2007-10-15 삼성전자주식회사 박막트랜지스터 액정표시장치
US7095460B2 (en) * 2001-02-26 2006-08-22 Samsung Electronics Co., Ltd. Thin film transistor array substrate using low dielectric insulating layer and method of fabricating the same
KR20030027302A (ko) * 2001-09-28 2003-04-07 삼성전자주식회사 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법
JP2003059939A (ja) * 2001-08-08 2003-02-28 Advanced Display Inc 薄膜トランジスタアレイ基板およびその製造方法
KR100685953B1 (ko) * 2002-08-20 2007-02-23 엘지.필립스 엘시디 주식회사 액정표시장치용 배선의 형성방법
JP4248853B2 (ja) * 2002-11-20 2009-04-02 大日本印刷株式会社 有機半導体素子用陽極
JP3870292B2 (ja) * 2002-12-10 2007-01-17 関東化学株式会社 エッチング液組成物とそれを用いた反射板の製造方法
JP3730958B2 (ja) * 2002-12-25 2006-01-05 鹿児島日本電気株式会社 積層膜のパターン形成方法及び積層配線電極
JP4400088B2 (ja) * 2003-05-06 2010-01-20 セイコーエプソン株式会社 電気光学装置用基板及びその製造方法並びに電気光学装置
TWI301330B (en) * 2003-07-11 2008-09-21 Chunghwa Picture Tubes Ltd Thin film transistor and fabricating method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7786497B2 (en) 2007-05-30 2010-08-31 Au Optronics Corporation Pixel structure of LCD and fabrication method thereof
US8058084B2 (en) 2007-05-30 2011-11-15 Au Optronics Corporation Pixel structure of LCD and fabrication method thereof
TWI675231B (zh) * 2018-03-30 2019-10-21 友達光電股份有限公司 顯示裝置

Also Published As

Publication number Publication date
CN102097369A (zh) 2011-06-15
JP2007025703A (ja) 2007-02-01
JP5008916B2 (ja) 2012-08-22
CN102097369B (zh) 2014-11-26
US20070019122A1 (en) 2007-01-25

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