TW200710205A - Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers - Google Patents
Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layersInfo
- Publication number
- TW200710205A TW200710205A TW095121571A TW95121571A TW200710205A TW 200710205 A TW200710205 A TW 200710205A TW 095121571 A TW095121571 A TW 095121571A TW 95121571 A TW95121571 A TW 95121571A TW 200710205 A TW200710205 A TW 200710205A
- Authority
- TW
- Taiwan
- Prior art keywords
- dense fluid
- post
- reflective coating
- bottom anti
- removal
- Prior art date
Links
- 239000012530 fluid Substances 0.000 title abstract 5
- 239000000203 mixture Substances 0.000 title abstract 4
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 3
- 239000006117 anti-reflective coating Substances 0.000 title abstract 2
- 239000010410 layer Substances 0.000 title 1
- 238000004377 microelectronic Methods 0.000 abstract 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000006184 cosolvent Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3947—Liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/264—Aldehydes; Ketones; Acetals or ketals
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Wood Science & Technology (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69117805P | 2005-06-16 | 2005-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200710205A true TW200710205A (en) | 2007-03-16 |
Family
ID=37570779
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095121571A TW200710205A (en) | 2005-06-16 | 2006-06-16 | Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090192065A1 (zh) |
EP (1) | EP1893355A1 (zh) |
JP (1) | JP2008547050A (zh) |
KR (1) | KR20080023346A (zh) |
CN (1) | CN101242914A (zh) |
TW (1) | TW200710205A (zh) |
WO (1) | WO2006138505A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629341B (zh) * | 2016-05-04 | 2018-07-11 | Oci有限公司 | 能夠抑制顆粒出現的蝕刻溶液 |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060255315A1 (en) * | 2004-11-19 | 2006-11-16 | Yellowaga Deborah L | Selective removal chemistries for semiconductor applications, methods of production and uses thereof |
KR20070121845A (ko) * | 2005-04-15 | 2007-12-27 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 용매계 내 자기 조립 단층을 이용한 고용량 이온 주입포토레지스트의 제거 |
US20090301996A1 (en) * | 2005-11-08 | 2009-12-10 | Advanced Technology Materials, Inc. | Formulations for removing cooper-containing post-etch residue from microelectronic devices |
US20080236619A1 (en) * | 2007-04-02 | 2008-10-02 | Enthone Inc. | Cobalt capping surface preparation in microelectronics manufacture |
US8008202B2 (en) * | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
TWI460557B (zh) * | 2008-03-07 | 2014-11-11 | Wako Pure Chem Ind Ltd | 半導體表面用處理劑組成物及使用半導體表面用處理劑組成物之半導體表面處理方法 |
US8026200B2 (en) | 2008-05-01 | 2011-09-27 | Advanced Technology Materials, Inc. | Low pH mixtures for the removal of high density implanted resist |
US8252194B2 (en) * | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
JP5206177B2 (ja) * | 2008-07-09 | 2013-06-12 | 三菱瓦斯化学株式会社 | レジスト剥離液組成物およびそれを用いた半導体素子の製造方法 |
US8153533B2 (en) | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
US8961701B2 (en) | 2008-09-24 | 2015-02-24 | Lam Research Corporation | Method and system of drying a microelectronic topography |
KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
WO2010074134A1 (ja) * | 2008-12-26 | 2010-07-01 | セントラル硝子株式会社 | シリコンウェハ用洗浄剤 |
US9053924B2 (en) | 2008-12-26 | 2015-06-09 | Central Glass Company, Limited | Cleaning agent for silicon wafer |
US9620410B1 (en) | 2009-01-20 | 2017-04-11 | Lam Research Corporation | Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process |
US20100184301A1 (en) * | 2009-01-20 | 2010-07-22 | Lam Research | Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process |
KR101075200B1 (ko) * | 2009-01-21 | 2011-10-19 | 샌트랄 글래스 컴퍼니 리미티드 | 실리콘 웨이퍼용 세정제, 실리콘 웨이퍼의 세정과정 중에 사용되는 발수성 세정제, 실리콘 웨이퍼 표면의 세정방법 |
US8497233B2 (en) | 2009-02-25 | 2013-07-30 | Avantor Performance Materials, Inc. | Stripping compositions for cleaning ion implanted photoresist from semiconductor device wafers |
EP2475000B1 (en) * | 2009-09-02 | 2015-07-01 | Wako Pure Chemical Industries, Ltd. | Processing agent composition for semiconductor surface and method for processing semiconductor surface using same |
US9006164B2 (en) | 2009-09-02 | 2015-04-14 | Wako Pure Chemical Industries, Ltd. | Resist remover composition and method for removing resist using the composition |
JP4743340B1 (ja) | 2009-10-28 | 2011-08-10 | セントラル硝子株式会社 | 保護膜形成用薬液 |
WO2012019092A1 (en) * | 2010-08-06 | 2012-02-09 | Promerus Llc | Polymer composition for microelectronic assembly |
JP5657318B2 (ja) * | 2010-09-27 | 2015-01-21 | 富士フイルム株式会社 | 半導体基板用洗浄剤、これを利用した洗浄方法及び半導体素子の製造方法 |
KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
US8828144B2 (en) | 2010-12-28 | 2014-09-09 | Central Grass Company, Limited | Process for cleaning wafers |
WO2012161790A1 (en) * | 2011-02-24 | 2012-11-29 | John Moore | Concentrated chemical composition and method for removing photoresist during microelectric fabrication |
US8518832B1 (en) | 2011-06-27 | 2013-08-27 | Western Digital (Fremont), Llc | Process for masking and removal of residue from complex shapes |
CN102902169A (zh) * | 2011-07-29 | 2013-01-30 | 中芯国际集成电路制造(上海)有限公司 | 去除光刻胶层的方法 |
US8951950B2 (en) * | 2012-03-12 | 2015-02-10 | Ekc Technology | Aluminum post-etch residue removal with simultaneous surface passivation |
US8703397B1 (en) | 2012-03-29 | 2014-04-22 | Western Digital (Fremont), Llc | Method for providing side shields for a magnetic recording transducer |
CN103539064B (zh) * | 2012-07-10 | 2016-03-02 | 无锡华润上华半导体有限公司 | Mems结构的牺牲层湿法腐蚀方法及mems结构 |
US9676009B2 (en) * | 2012-11-01 | 2017-06-13 | Specrra Systems Corporation | Supercritical fluid cleaning of banknotes and secure documents |
RS20150286A1 (en) * | 2012-11-01 | 2015-10-30 | Spectra Systems Corporation | CLEANING OF BILLS, SECURITIES AND PROTECTED PAPER, FLUID IN A SUPERCRITICAL CONDITION |
US9765288B2 (en) | 2012-12-05 | 2017-09-19 | Entegris, Inc. | Compositions for cleaning III-V semiconductor materials and methods of using same |
TWI655273B (zh) | 2013-03-04 | 2019-04-01 | 美商恩特葛瑞斯股份有限公司 | 選擇性蝕刻氮化鈦之組成物及方法 |
CN103242985B (zh) * | 2013-04-03 | 2014-07-30 | 云南北方奥雷德光电科技股份有限公司 | 一种有机发光微型显示器抗反射层清洗工艺 |
WO2014178426A1 (ja) * | 2013-05-02 | 2014-11-06 | 富士フイルム株式会社 | エッチング方法、これに用いるエッチング液およびエッチング液のキット、ならびに半導体基板製品の製造方法 |
US10920141B2 (en) | 2013-06-06 | 2021-02-16 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
CN105453238B (zh) * | 2013-06-11 | 2020-11-10 | 斯派克迈特股份有限公司 | 用于半导体制造过程和/或方法的化学组合物、使用其制得的装置 |
CN112442374A (zh) | 2013-07-31 | 2021-03-05 | 恩特格里斯公司 | 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂 |
US10428271B2 (en) * | 2013-08-30 | 2019-10-01 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ni:NiGe:Ge選擇性蝕刻配方及其使用方法 |
KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
US20160340620A1 (en) | 2014-01-29 | 2016-11-24 | Advanced Technology Materials, Inc. | Post chemical mechanical polishing formulations and method of use |
WO2015119925A1 (en) | 2014-02-05 | 2015-08-13 | Advanced Technology Materials, Inc. | Non-amine post-cmp compositions and method of use |
US9001467B1 (en) | 2014-03-05 | 2015-04-07 | Western Digital (Fremont), Llc | Method for fabricating side shields in a magnetic writer |
US20170125240A1 (en) | 2014-03-31 | 2017-05-04 | National Institute Of Advanced Industrial Science And Technology | Method for manufacturing semiconductor and method for cleaning wafer substrate |
KR102375342B1 (ko) | 2014-05-13 | 2022-03-16 | 바스프 에스이 | Tin 풀-백 및 클리닝 조성물 |
US20150368557A1 (en) * | 2014-06-23 | 2015-12-24 | Hyosan Lee | Metal etchant compositions and methods of fabricating a semiconductor device using the same |
US10619097B2 (en) | 2014-06-30 | 2020-04-14 | Specmat, Inc. | Low-[HF] room temperature wet chemical growth (RTWCG) chemical formulation |
WO2016161072A1 (en) | 2015-03-31 | 2016-10-06 | Air Products And Chemicals, Inc. | Cleaning formulations |
KR102427699B1 (ko) | 2015-04-27 | 2022-08-01 | 삼성전자주식회사 | 포토레지스트 제거용 조성물 및 이를 이용한 반도체 장치의 제조 방법 |
JP6521799B2 (ja) * | 2015-08-31 | 2019-05-29 | 東京エレクトロン株式会社 | ハロゲン除去方法および半導体装置の製造方法 |
CN105388713A (zh) * | 2015-12-16 | 2016-03-09 | 无锡吉进环保科技有限公司 | 一种薄膜液晶显示器中的铝膜水系光阻剥离液 |
CN106890816A (zh) * | 2015-12-21 | 2017-06-27 | 东莞新科技术研究开发有限公司 | 真空泵的清洗方法 |
WO2017157694A1 (de) | 2016-03-14 | 2017-09-21 | Basf Coatings Gmbh | Reinigungszusammensetzung |
US11319513B2 (en) * | 2016-03-24 | 2022-05-03 | Avantor Performance Materials, Llc | Non-aqueous tungsten compatible metal nitride selective etchants and cleaners |
JP6875811B2 (ja) * | 2016-09-16 | 2021-05-26 | 株式会社Screenホールディングス | パターン倒壊回復方法、基板処理方法および基板処理装置 |
KR101966808B1 (ko) * | 2016-09-30 | 2019-04-08 | 세메스 주식회사 | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 |
KR101828437B1 (ko) * | 2017-04-06 | 2018-03-29 | 주식회사 디엔에스 | 실리콘 질화막 식각용 조성물. |
KR101977122B1 (ko) * | 2017-05-24 | 2019-05-10 | 한국과학기술원 | 나노몰드 및 그 제조방법 |
TWI803551B (zh) * | 2017-12-27 | 2023-06-01 | 日商東京應化工業股份有限公司 | 去除基板上之有機系硬化膜之方法,及酸性洗淨液 |
US11456170B2 (en) * | 2019-04-15 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cleaning solution and method of cleaning wafer |
AU2021234274B9 (en) * | 2020-03-11 | 2024-01-18 | Advansix Resins & Chemicals Llc | Surfactants for electronics products |
EP4179056A2 (en) | 2020-07-13 | 2023-05-17 | AdvanSix Resins & Chemicals LLC | Branched amino acid surfactants for electronics products |
CN115287069B (zh) * | 2022-07-06 | 2023-06-09 | 湖北兴福电子材料股份有限公司 | 一种抑制二氧化硅蚀刻的无c蚀刻液 |
CN115895800A (zh) * | 2022-12-14 | 2023-04-04 | 芯越微电子材料(嘉兴)有限公司 | 半水基晶圆基底清洗液组合物及其使用方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4215005A (en) * | 1978-01-30 | 1980-07-29 | Allied Chemical Corporation | Organic stripping compositions and method for using same |
US6641678B2 (en) * | 2001-02-15 | 2003-11-04 | Micell Technologies, Inc. | Methods for cleaning microelectronic structures with aqueous carbon dioxide systems |
US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
US20060180572A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Removal of post etch residue for a substrate with open metal surfaces |
US8241708B2 (en) * | 2005-03-09 | 2012-08-14 | Micron Technology, Inc. | Formation of insulator oxide films with acid or base catalyzed hydrolysis of alkoxides in supercritical carbon dioxide |
US7524383B2 (en) * | 2005-05-25 | 2009-04-28 | Tokyo Electron Limited | Method and system for passivating a processing chamber |
-
2006
- 2006-06-16 JP JP2008517116A patent/JP2008547050A/ja not_active Withdrawn
- 2006-06-16 US US11/917,654 patent/US20090192065A1/en not_active Abandoned
- 2006-06-16 CN CNA2006800299515A patent/CN101242914A/zh active Pending
- 2006-06-16 EP EP06773283A patent/EP1893355A1/en not_active Withdrawn
- 2006-06-16 KR KR1020087001246A patent/KR20080023346A/ko not_active Application Discontinuation
- 2006-06-16 WO PCT/US2006/023388 patent/WO2006138505A1/en active Application Filing
- 2006-06-16 TW TW095121571A patent/TW200710205A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629341B (zh) * | 2016-05-04 | 2018-07-11 | Oci有限公司 | 能夠抑制顆粒出現的蝕刻溶液 |
US10167425B2 (en) | 2016-05-04 | 2019-01-01 | Oci Company Ltd. | Etching solution capable of suppressing particle appearance |
Also Published As
Publication number | Publication date |
---|---|
KR20080023346A (ko) | 2008-03-13 |
JP2008547050A (ja) | 2008-12-25 |
CN101242914A (zh) | 2008-08-13 |
US20090192065A1 (en) | 2009-07-30 |
WO2006138505A1 (en) | 2006-12-28 |
EP1893355A1 (en) | 2008-03-05 |
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