WO2009135102A3 - Low ph mixtures for the removal of high density implanted resist - Google Patents

Low ph mixtures for the removal of high density implanted resist Download PDF

Info

Publication number
WO2009135102A3
WO2009135102A3 PCT/US2009/042480 US2009042480W WO2009135102A3 WO 2009135102 A3 WO2009135102 A3 WO 2009135102A3 US 2009042480 W US2009042480 W US 2009042480W WO 2009135102 A3 WO2009135102 A3 WO 2009135102A3
Authority
WO
WIPO (PCT)
Prior art keywords
low
mixtures
removal
high density
implanted resist
Prior art date
Application number
PCT/US2009/042480
Other languages
French (fr)
Other versions
WO2009135102A2 (en
Inventor
Emanuel Cooper
Julie Cissell
Renjie Zhou
Michael B. Korzenski
Original Assignee
Advanced Technology Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials, Inc. filed Critical Advanced Technology Materials, Inc.
Priority to EP09739904A priority Critical patent/EP2288965A4/en
Priority to JP2011507675A priority patent/JP2011520142A/en
Publication of WO2009135102A2 publication Critical patent/WO2009135102A2/en
Publication of WO2009135102A3 publication Critical patent/WO2009135102A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means

Abstract

A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s).
PCT/US2009/042480 2008-05-01 2009-05-01 Low ph mixtures for the removal of high density implanted resist WO2009135102A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP09739904A EP2288965A4 (en) 2008-05-01 2009-05-01 Low ph mixtures for the removal of high density implanted resist
JP2011507675A JP2011520142A (en) 2008-05-01 2009-05-01 Low pH mixture for removal of high density implanted resist

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US4960008P 2008-05-01 2008-05-01
US61/049,600 2008-05-01
US5479808P 2008-05-20 2008-05-20
US61/054,798 2008-05-20
US9395408P 2008-09-03 2008-09-03
US61/093,954 2008-09-03

Publications (2)

Publication Number Publication Date
WO2009135102A2 WO2009135102A2 (en) 2009-11-05
WO2009135102A3 true WO2009135102A3 (en) 2010-02-18

Family

ID=41255846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/042480 WO2009135102A2 (en) 2008-05-01 2009-05-01 Low ph mixtures for the removal of high density implanted resist

Country Status (6)

Country Link
US (1) US8026200B2 (en)
EP (1) EP2288965A4 (en)
JP (1) JP2011520142A (en)
KR (1) KR20100133507A (en)
TW (1) TWI494710B (en)
WO (1) WO2009135102A2 (en)

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Also Published As

Publication number Publication date
US8026200B2 (en) 2011-09-27
WO2009135102A2 (en) 2009-11-05
JP2011520142A (en) 2011-07-14
KR20100133507A (en) 2010-12-21
EP2288965A4 (en) 2011-08-10
TW201001099A (en) 2010-01-01
TWI494710B (en) 2015-08-01
EP2288965A2 (en) 2011-03-02
US20090281016A1 (en) 2009-11-12

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