JP4849420B2 - Method for electrolytic treatment of etching solution - Google Patents
Method for electrolytic treatment of etching solution Download PDFInfo
- Publication number
- JP4849420B2 JP4849420B2 JP2008105547A JP2008105547A JP4849420B2 JP 4849420 B2 JP4849420 B2 JP 4849420B2 JP 2008105547 A JP2008105547 A JP 2008105547A JP 2008105547 A JP2008105547 A JP 2008105547A JP 4849420 B2 JP4849420 B2 JP 4849420B2
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- acid
- treatment
- concentration
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims description 89
- 238000011282 treatment Methods 0.000 title claims description 59
- 238000000034 method Methods 0.000 title claims description 34
- 239000000243 solution Substances 0.000 claims description 72
- 239000002253 acid Substances 0.000 claims description 55
- 229910052736 halogen Inorganic materials 0.000 claims description 39
- 150000002367 halogens Chemical class 0.000 claims description 33
- 230000003647 oxidation Effects 0.000 claims description 25
- 238000007254 oxidation reaction Methods 0.000 claims description 25
- 150000003839 salts Chemical class 0.000 claims description 22
- 150000002696 manganese Chemical class 0.000 claims description 21
- 150000007522 mineralic acids Chemical class 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 10
- -1 halogen acid Chemical class 0.000 claims description 8
- 238000005868 electrolysis reaction Methods 0.000 claims description 7
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 239000010936 titanium Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- 239000004480 active ingredient Substances 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000007772 electroless plating Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 6
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 6
- JQWHASGSAFIOCM-UHFFFAOYSA-M sodium periodate Chemical compound [Na+].[O-]I(=O)(=O)=O JQWHASGSAFIOCM-UHFFFAOYSA-M 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 4
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 239000012286 potassium permanganate Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000008151 electrolyte solution Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 229910000464 lead oxide Inorganic materials 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910001245 Sb alloy Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NALMPLUMOWIVJC-UHFFFAOYSA-N n,n,4-trimethylbenzeneamine oxide Chemical compound CC1=CC=C([N+](C)(C)[O-])C=C1 NALMPLUMOWIVJC-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229940032753 sodium iodate Drugs 0.000 description 2
- 235000015281 sodium iodate Nutrition 0.000 description 2
- 239000011697 sodium iodate Substances 0.000 description 2
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical compound OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001517610 Funa Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 229910001430 chromium ion Inorganic materials 0.000 description 1
- 229940117975 chromium trioxide Drugs 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N chromium trioxide Inorganic materials O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- GAMDZJFZMJECOS-UHFFFAOYSA-N chromium(6+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Cr+6] GAMDZJFZMJECOS-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(ii,iv) oxide Chemical compound O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002941 palladium compounds Chemical class 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Landscapes
- Water Treatment By Electricity Or Magnetism (AREA)
- Chemically Coating (AREA)
Description
本発明は、マンガン塩を有効成分として含むエッチング液の電解処理方法に関する。 The present invention relates to an electrolytic treatment method for an etchant containing a manganese salt as an active ingredient.
樹脂成形体に電気めっき皮膜を形成する方法としては、脱脂及びエッチングを行った後、必要に応じて、中和及びプリディップを行い、次いで、錫化合物及びパラジウム化合物を含有するコロイド溶液を用いて無電解めっき用触媒を付与し、その後必要に応じて活性化処理(アクセレーター処理)を行い、無電解めっき及び電気めっきを順次行う方法が一般的な方法である(非特許文献1)。 As a method of forming an electroplated film on a resin molded body, after degreasing and etching, neutralization and pre-dip are performed as necessary, and then a colloidal solution containing a tin compound and a palladium compound is used. A general method is a method in which an electroless plating catalyst is applied, an activation treatment (accelerator treatment) is performed as necessary, and then electroless plating and electroplating are sequentially performed (Non-Patent Document 1).
この場合、エッチング処理液としては、三酸化クロムと硫酸の混合液からなるクロム酸混液が広く用いられているが、クロム酸混液は、有毒な6価クロムを含むために作業環境に悪影響があり、しかも廃水を安全に処理するためには、6価クロムを3価クロムイオンに還元した後、中和沈殿させることが必要であり、廃水処理のために煩雑な処理が要求される。このため、現場での作業時の安全性や廃水による環境への影響を考慮すると、クロム酸を含有しないエッチング処理液が望まれる。 In this case, a chromic acid mixture composed of a mixture of chromium trioxide and sulfuric acid is widely used as the etching treatment liquid. However, the chromic acid mixture contains toxic hexavalent chromium and thus has an adverse effect on the working environment. In addition, in order to treat wastewater safely, it is necessary to neutralize and precipitate hexavalent chromium after reducing it to trivalent chromium ions, and complicated treatment is required for wastewater treatment. For this reason, in consideration of safety at the time of work in the field and the environmental impact of wastewater, an etching treatment liquid not containing chromic acid is desired.
本発明者等はクロム酸混液に替わり得るエッチング液を開発すべく研究を重ねた結果、マンガン塩、無機酸、並びに過ハロゲン酸及び過ハロゲン酸塩からなる群から選ばれた少なくとも一種の成分を有効成分として含む新規なエッチング液を見出した。該エッチング液は、クロム酸等の有害性の高い成分を含まない安全性の高いエッチング処理液であり、各種の樹脂成形体に対するエッチング処理に用いた場合に、高い密着性を有するめっき皮膜を形成することができる。 As a result of repeated research to develop an etching solution that can replace the chromic acid mixture, the present inventors have found at least one component selected from the group consisting of manganese salts, inorganic acids, and perhalogenates and perhalogenates. A novel etching solution containing an active ingredient has been found. The etching solution is a highly safe etching treatment solution that does not contain highly harmful components such as chromic acid, and forms a plating film with high adhesion when used in etching treatments for various resin molded products. can do.
しかしながら、該エッチング液を用いて連続的にエッチング処理を行うと、過ハロゲン酸及び過ハロゲン酸塩が還元されて、それぞれハロゲン酸及びハロゲン酸塩となり、生成したハロゲン酸及びハロゲン酸塩がエッチング液中に蓄積すると、エッチング液の自己分解が生じ易くなり、マンガン塩、過ハロゲン酸、過ハロゲン酸塩等の濃度が急激に低下して、エッチング液の組成を一定に保持できなくなる。このようにしてマンガン塩、過ハロゲン酸、過ハロゲン酸塩等の濃度が低下したエッチング液は、酸化作用が低下し、ついにはエッチングの継続が不可能となる。このため、上記したマンガン塩を有効成分として含むエッチング液について、エッチング液の自己分解による性能低下の問題を解決して、長寿命化を可能とする方法の開発が望まれる。
本発明は、上記した従来技術の現状に鑑みてなされたものであり、その主な目的は、上記したマンガン塩を含む新規なエッチング液について、使用によってハロゲン酸及び/又はハロゲン酸塩が蓄積した場合に、その濃度を低下させて長時間の継続使用を可能とする方法を提供することである。 The present invention has been made in view of the current state of the prior art described above, and its main object is to accumulate halogen acid and / or halogen acid salt by using a novel etching solution containing the above manganese salt. In such a case, the method is to provide a method that enables continuous use for a long time by reducing the concentration.
本発明者は、上記した目的を達成すべく鋭意研究を重ねた結果、上記したマンガン塩を有効成分として含むエッチング液について、使用に伴ってハロゲン酸及び/又はハロゲン酸塩が蓄積した場合に、陽極電解酸化処理を行うことによって、ハロゲン酸及びハロゲン酸塩の濃度を低下させることができ、エッチング液の性能の低下を防止して、優れたエッチング性能を長期間維持できることを見出し、ここに本発明を完成するに至った。 As a result of intensive studies to achieve the above-mentioned object, the present inventor, for the etching liquid containing the above-described manganese salt as an active ingredient, when halogen acid and / or halogen acid salt accumulates with use, It has been found that by performing anodic electrolytic oxidation treatment, the concentration of the halogen acid and the halogen acid salt can be reduced, the performance of the etching solution can be prevented from being deteriorated, and excellent etching performance can be maintained for a long time. The invention has been completed.
即ち、本発明は、下記のエッチング液の電解処理方法を提供するものである。
1. 無機酸を20〜1200g/L、マンガン塩を0.01〜40g/L、並びに過ハロゲン酸および過ハロゲン酸塩からなる群から選ばれた少なくとも一種の成分を1〜200g/L含有する水溶液からなるエッチング液の電解処理方法であって、
使用によってハロゲン酸及び/又はハロゲン酸塩の濃度が上昇したエッチング液を陽極電解酸化処理することを特徴とする方法。
2. ハロゲン酸及びハロゲン酸塩の合計濃度が10g/L以上含有する状態となったエッチング液を電解処理の対象とする上記項1に記載の方法。
3. 陽極として不溶性電極を用いる上記項1又は2に記載の方法。
4. 陽極電流密度0.1〜20A/dm2で電解を行う上記項1〜3のいずれかに記載の方法。
5. 撹拌下に陽極電解酸化処理を行う上記項1〜4のいずれかに記載の方法。
That is, the present invention provides the following electrolytic treatment method for an etching solution.
1. From an aqueous solution containing 20 to 1200 g / L of inorganic acid, 0.01 to 40 g / L of manganese salt, and 1 to 200 g / L of at least one component selected from the group consisting of perhalogenates and perhalogenates. An etching solution electrolytic treatment method comprising:
An anodic electrolytic oxidation treatment of an etching solution in which the concentration of a halogen acid and / or a halogen acid salt is increased by use.
2. Item 2. The method according to Item 1, wherein the etching solution in which the total concentration of the halogen acid and the halogen acid salt is 10 g / L or more is subjected to electrolytic treatment.
3. Item 3. The method according to Item 1 or 2, wherein an insoluble electrode is used as the anode.
4). The method according to any one of items 1 to 3 for performing electrolysis in the anodic current density 0.1~20A / dm 2.
5). Item 5. The method according to any one of Items 1 to 4, wherein the anodic electrolytic oxidation treatment is performed with stirring.
以下、本発明の処理方法について具体的に説明する。 Hereinafter, the processing method of the present invention will be specifically described.
処理対象エッチング液
本発明の処理対象とするエッチング液は、無機酸を20〜1200g/L、マンガン塩を0.01〜40g/L、並びに過ハロゲン酸および過ハロゲン酸塩からなる群から選ばれた少なくとも一種の成分を1〜200g/L含有する水溶液からなるものである。該エッチング液は、ABS樹脂などの各種の樹脂成形体に対して、良好な密着性を有するめっき皮膜を形成することが可能な、クロム酸混液に替わり得るエッチング処理液であって、安全性が高く、廃水処理が容易な新規なエッチング液である。
Etching solution to be treated The etching solution to be treated in the present invention is selected from the group consisting of 20 to 1200 g / L of inorganic acid, 0.01 to 40 g / L of manganese salt, and perhalogen acid and perhalogenate. It consists of an aqueous solution containing 1 to 200 g / L of at least one component. The etching solution is an etching treatment solution that can replace a chromic acid mixed solution that can form a plating film having good adhesion to various resin molded bodies such as ABS resin. It is a novel etching solution that is high and easy to treat waste water.
該エッチング液における有効成分の内で、無機酸としては、硫酸、塩酸、硝酸、リン酸、ホウ酸、炭酸、亜硫酸、亜硝酸、亜リン酸、亜ホウ酸、過酸化水素、過塩素酸等を用いることができる。これらの内で、特に、硫酸、塩酸等が好ましい。これらの無機酸は、一種単独または二種以上混合して用いることができる。無機酸の含有量は、20〜1200g/L程度であり、好ましくは300〜1000g/L程度である。 Among the active ingredients in the etching solution, inorganic acids include sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, boric acid, carbonic acid, sulfurous acid, nitrous acid, phosphorous acid, boric acid, hydrogen peroxide, perchloric acid, etc. Can be used. Of these, sulfuric acid, hydrochloric acid and the like are particularly preferable. These inorganic acids can be used singly or in combination of two or more. The content of the inorganic acid is about 20 to 1200 g / L, preferably about 300 to 1000 g / L.
該エッチング液における有効成分の内で、マンガン塩としては、特に過マンガン酸塩が好ましい。過マンガン酸塩としては、水溶液の塩であれば良く、その具体例としては、過マンガン酸ナトリウム、過マンガン酸カリウム等を例示できる。マンガン塩は、一種単独または二種以上混合して用いることができる。マンガン塩の含有量は、0.01〜40g/L程度であり、好ましくは0.1〜10g/L程度である。 Of the effective components in the etching solution, permanganate is particularly preferable as the manganese salt. The permanganate may be a salt in an aqueous solution, and specific examples thereof include sodium permanganate and potassium permanganate. Manganese salts can be used singly or in combination of two or more. The manganese salt content is about 0.01 to 40 g / L, preferably about 0.1 to 10 g / L.
該エッチング液における有効成分の内で、過ハロゲン酸としては、過塩素酸、過臭素酸、過ヨウ素酸等を挙げることができる。過ハロゲン酸塩としては、上記した過ハロゲン酸の水溶性塩を用いることができ、例えば、過ハロゲン酸ナトリウム、過ハロゲン酸カリウム等を用いることができる。過ハロゲン酸及び過ハロゲン酸塩は、一種単独又は二種以上混合して用いることができる。 Among the active ingredients in the etching solution, examples of perhalogen acids include perchloric acid, perbromic acid, and periodic acid. As the perhalogenate, the above-mentioned water-soluble salt of perhalogen acid can be used, and for example, sodium perhalogenate, potassium perhalogenate, or the like can be used. Perhalogenic acid and perhalogenate can be used singly or in combination of two or more.
過ハロゲン酸及び過ハロゲン酸塩からなる群から選ばれた少なくとも一種の成分の含有量は、1〜200g/L程度であり、好ましくは10〜100g/L程度である。 The content of at least one component selected from the group consisting of perhalogenic acid and perhalogenate is about 1 to 200 g / L, preferably about 10 to 100 g / L.
エッチング液の電解処理方法
上記エッチング液は、エッチング処理を長期間行うとエッチング液中の過ハロゲン酸及び/又は過ハロゲン酸塩が還元されて、ハロゲン酸及び/又はハロゲン酸塩が生成し、これがエッチング液中に蓄積すると、エッチング液の分解が急激に進行する。
Electrolytic treatment method of etching solution When the above etching solution is subjected to etching treatment for a long period of time, perhalogen acid and / or perhalogenate in the etchant is reduced to produce halogen acid and / or halogenate, When accumulated in the etchant, decomposition of the etchant proceeds rapidly.
本発明によれば、ハロゲン酸及び/又はハロゲン酸塩の濃度が上昇したエッチング液について、後述した方法で陽極電解酸化処理を行うことによって、ハロゲン酸及びハロゲン酸塩の濃度を低下させることができ、良好なエッチング性能を長期間維持することが可能となる。 According to the present invention, the concentration of the halogen acid and the halogen acid salt can be reduced by performing an anodic electrolytic oxidation treatment on the etching solution having an increased halogen acid and / or halogen acid salt concentration by the method described later. It is possible to maintain good etching performance for a long time.
陽極電解酸化処理を行う時期については特に限定はなく、ハロゲン酸及び/又はハロゲン酸塩の蓄積が生じた場合に陽極電解酸化処理を適宜行えばよい。特に、ハロゲン酸およびハロゲン酸塩の合計濃度が10g/L程度以上になると、エッチング液の分解が急激に進行してマンガン塩、過ハロゲン酸、過ハロゲン酸塩等の濃度が著しく低下する傾向がある。このため、ハロゲン酸およびハロゲン酸塩の合計濃度が10g/L程度以上となったエッチング液については、陽極電解酸化処理を行うことが好ましい。 There is no particular limitation on the timing of the anodic electrolytic oxidation treatment, and the anodic electrolytic oxidation treatment may be appropriately performed when accumulation of halogen acid and / or halogen acid salt occurs. In particular, when the total concentration of the halogen acid and the halogen acid salt is about 10 g / L or more, the decomposition of the etching solution proceeds rapidly, and the concentrations of manganese salt, perhalogen acid, perhalogenate and the like tend to decrease remarkably. is there. For this reason, it is preferable to perform an anodic electrolytic oxidation treatment on the etching solution in which the total concentration of the halogen acid and the halogen acid salt is about 10 g / L or more.
尚、陽極電解処理を行う際に、処理対象となるエッチング液中におけるマンガン塩、無機酸及び過ハロゲン酸の濃度については特に限定はなく、任意の濃度のエッチング液について、陽極電解処理を行うことができる。尚、マンガン塩の濃度については、エッチング処理の進行に伴って減少するので、陽極酸化処理を行う際には、エッチング液中にマンガン塩が含まれていなくても良い。この様なエッチング液についても、陽極電解処理を行った後、有効成分の濃度を所定の範囲に調整することによって、継続して使用が可能となる。 In addition, when performing anodic electrolysis, there is no particular limitation on the concentration of manganese salt, inorganic acid and perhalogen acid in the etching solution to be treated, and anodic electrolysis is performed on an etching solution of any concentration. Can do. Since the concentration of the manganese salt decreases as the etching process proceeds, the manganese salt may not be included in the etching solution when the anodizing process is performed. Such an etching solution can be continuously used by adjusting the concentration of the active ingredient to a predetermined range after the anodic electrolytic treatment.
本発明の処理方法では、まず、処理対象となるエッチング液中に沈殿物が含まれる場合には、フィルター濾過などの方法によって沈殿物を除去することが好ましい。 In the treatment method of the present invention, first, when a precipitate is contained in the etching solution to be treated, it is preferable to remove the precipitate by a method such as filter filtration.
次いで、該エッチング液について、陽極電解酸化処理を行う。電解処理に用いる処理装置の一例の概略図を図1に示す。 Next, an anodic electrolytic oxidation treatment is performed on the etching solution. A schematic diagram of an example of a processing apparatus used for electrolytic treatment is shown in FIG.
陽極としては、不溶性電極であれば特に限定なく使用できる。不溶性電極の具体例としては、Ti/Pt(Tiに白金系コーティングを施したもの)、Ti/Ir酸化物(TiにIr酸化物コーティングを施したもの)、Ti/Ru(TiにRu酸化物コーティングを施したもの)、Ti/Ir酸化物−Ru酸化物(TiにIr酸化物とRu酸化物を混合させてコーティングを施したもの)、Ti/Ir酸化物−Ta酸化物(TiにIr酸化物とTa酸化物を混合させてコーティングを施したもの)、Ti/Pt/Ir酸化物−Ru酸化物(Ti/PtにIr酸化物とRu酸化物を混合させてコーティングを施したもの)、Ti/Pt/Ir酸化物−Ta酸化物(Ti/PtにIr酸化物とTa酸化物を混合させてコーティングを施したもの)、ステンレス、アルミニウム、鉛合金(Pb−Sn合金,Pb−Ag合金,Pb−Sb合金)、鉛酸化物(一酸化鉛、二酸化鉛、三酸化鉛、四酸化三鉛)、鉛、酸化スズ、カーボン、ダイヤモンド電極(窒素やホウ素を含んだダイヤモンドをシリコンやニオブなどの基体に被覆したもの)、ITO電極(インジウムスズ酸化物)等を挙げることができる。これらの陽極の内で、鉛合金(Pb−Sn合金,Pb−Ag合金,Pb−Sb合金)、鉛酸化物(一酸化鉛、二酸化鉛、三酸化鉛、四酸化三鉛)、鉛等が好ましく、鉛酸化物が特に好ましい。 As the anode, any insoluble electrode can be used without particular limitation. Specific examples of insoluble electrodes include Ti / Pt (Ti coated with platinum coating), Ti / Ir oxide (Ti coated with Ir oxide coating), Ti / Ru (Ti Ru oxide) Coated), Ti / Ir oxide-Ru oxide (coated by mixing Ir oxide and Ru oxide on Ti), Ti / Ir oxide-Ta oxide (Ir on Ti) Oxide and Ta oxide mixed and coated), Ti / Pt / Ir oxide-Ru oxide (Ti / Pt mixed with Ir oxide and Ru oxide and coated) , Ti / Pt / Ir oxide-Ta oxide (Ti / Pt mixed with Ir oxide and Ta oxide and coated), stainless steel, aluminum, lead alloy (Pb-Sn alloy, P -Ag alloy, Pb-Sb alloy), lead oxide (lead monoxide, lead dioxide, lead trioxide, trilead tetraoxide), lead, tin oxide, carbon, diamond electrode (diamond containing nitrogen and boron is silicon And those coated on a substrate such as niobium) and ITO electrodes (indium tin oxide). Among these anodes, lead alloys (Pb—Sn alloy, Pb—Ag alloy, Pb—Sb alloy), lead oxides (lead monoxide, lead dioxide, lead trioxide, trilead tetroxide), lead, etc. Preferably, lead oxide is particularly preferable.
陰極としては、特に制限はなく、不溶性電極及び可溶性電極をいずれも用いることができる。不溶性電極としては、上記した陽極と同様の電極を用いることができる。陰極としては、銅、ニッケル、スズ、鉄、亜鉛、黄銅、アルミニウム、ステンレスなどを用いることができる。特に、陰極としては、鉛合金、鉛、Pt/Ti、ニッケル、銅、黄銅、ステンレスなどが好ましい。 There is no restriction | limiting in particular as a cathode, Both an insoluble electrode and a soluble electrode can be used. As the insoluble electrode, an electrode similar to the above-described anode can be used. As the cathode, copper, nickel, tin, iron, zinc, brass, aluminum, stainless steel, or the like can be used. In particular, as the cathode, lead alloy, lead, Pt / Ti, nickel, copper, brass, stainless steel and the like are preferable.
電極の形状は特に制限されず、棒状、板状、メッシュ状あらゆる形を使用することができる。 The shape of the electrode is not particularly limited, and any shape such as a rod shape, a plate shape, or a mesh shape can be used.
陽極と陰極は、必要に応じて、いずれか一方又は両方について、隔膜を用いて、エッチング液と直接接触させない状態としても良い。隔膜の材質については特に限定はなく、エッチング液中において安定な材料であればよい。例えば、素焼きの磁器製隔膜を用いることができる。磁器製隔膜の種類、形状、大きさなどについては特に限定はなく、電極を収容するための十分な大きさがあればよい。隔膜を用いる場合には、電極室中の電解液としては、例えば無機酸の水溶液を用いることができる。この場合、処理対象となるエッチング液中に含まれる無機酸と同一の無機酸を用いることが好ましい。電解液として用いる無機酸の濃度は、例えば、2〜200g/L程度とすることが好ましく、20〜100g/L程度とすることがより好ましい。 If necessary, one or both of the anode and the cathode may be in a state of not being brought into direct contact with the etching solution using a diaphragm. The material of the diaphragm is not particularly limited, and any material that is stable in the etching solution may be used. For example, an unglazed porcelain diaphragm can be used. There are no particular limitations on the type, shape, size, etc. of the porcelain diaphragm, as long as it is large enough to accommodate the electrodes. In the case of using a diaphragm, as the electrolytic solution in the electrode chamber, for example, an aqueous solution of an inorganic acid can be used. In this case, it is preferable to use the same inorganic acid as the inorganic acid contained in the etching solution to be processed. The concentration of the inorganic acid used as the electrolytic solution is, for example, preferably about 2 to 200 g / L, and more preferably about 20 to 100 g / L.
極板の大きさについては特に限定はないが、陽極と陰極の表面積比は陽極:陰極=1:1〜100:1程度とすることが好ましく、1:1〜10:1程度とすることがより好ましい。 The size of the electrode plate is not particularly limited, but the surface area ratio between the anode and the cathode is preferably about anode: cathode = 1: 1 to 100: 1, preferably about 1: 1 to 10: 1. More preferred.
陽極電解酸化処理の条件は、特に限定的ではないが、例えば、液温20〜70℃程度、好ましくは25〜70℃程度として、陽極電流密度を0.1〜20A/dm2程度、好ましくは、1〜10A/dm2程度とすればよい。 The conditions of the anodic electrolytic oxidation treatment are not particularly limited. For example, the liquid temperature is about 20 to 70 ° C., preferably about 25 to 70 ° C., and the anodic current density is about 0.1 to 20 A / dm 2 , preferably It may be about 1 to 10 A / dm 2 .
陽極電解酸化処理の処理時間は、処理対象となるエッチング液の液量などによって異なるので、特に限定的ではないが、エッチング液中に含まれるハロゲン酸及びハロゲン酸塩の濃度が十分に低下するまで電解処理を行えばよい。 The treatment time of the anodic electrolytic oxidation treatment varies depending on the amount of the etching solution to be treated, and is not particularly limited, but until the concentration of the halogen acid and the halide salt contained in the etching solution is sufficiently reduced. Electrolytic treatment may be performed.
陽極電解酸化処理は、エッチング液の撹拌下又は無撹拌下において行うことができる。特に、撹拌下において陽極電解酸化処理を行うことによって、ハロゲン酸及びハロゲン酸塩の濃度を大きく低下させることができる。撹拌方法については特に限定はなく、空気撹拌、窒素ガスによる撹拌、ポンプによる液循環等の任意の方法を採用できる。また、電極板を揺動させる方法によってエッチング液を撹拌してもよい。特に、空気撹拌、窒素ガスによる撹拌、ポンプによる液循環等の方法が好ましい。また、隔膜を用いて電解処理を行う場合には、隔膜内の電解液についても撹拌してもよい。 The anodic electrolytic oxidation treatment can be performed with or without stirring the etching solution. In particular, the concentration of the halogen acid and the halogen acid salt can be greatly reduced by performing the anodic electrolytic oxidation treatment with stirring. The stirring method is not particularly limited, and any method such as air stirring, stirring with nitrogen gas, and liquid circulation with a pump can be employed. Further, the etching solution may be stirred by a method of swinging the electrode plate. In particular, methods such as air agitation, agitation with nitrogen gas, and liquid circulation with a pump are preferred. In addition, when the electrolytic treatment is performed using the diaphragm, the electrolytic solution in the diaphragm may be stirred.
上記した陽極電解酸化処理を行うことによって、エッチング液中に含まれるハロゲン酸及び/又はハロゲン酸塩の濃度が低下して、過ハロゲン酸及び/又は過ハロゲン酸塩の濃度が上昇する。また、マンガン塩の濃度については、わずかに減少する場合がある。このため、陽極電解酸化処理後、必要に応じて、マンガン塩、過ハロゲン酸、過ハロゲン酸塩等を添加することによって、エッチング液の性能を回復させて、再利用することが可能となる。 By performing the above-described anodic electrolytic oxidation treatment, the concentration of the halogen acid and / or the halogen acid salt contained in the etching solution is decreased, and the concentration of the perhalogen acid and / or the perhalogen acid salt is increased. In addition, the manganese salt concentration may slightly decrease. Therefore, after the anodic electrolytic oxidation treatment, the performance of the etching solution can be recovered and reused by adding manganese salt, perhalogen acid, perhalogenate, or the like as necessary.
本発明のエッチング液の処理方法によれば、無機酸、マンガン塩、並びに過ハロゲン酸および過ハロゲン酸塩からなる群から選ばれた少なくとも一種の成分を有効成分として含む新規なエッチング液について、陽極電解酸化という簡単な方法によって、エッチング液中で増加するハロゲン酸及び/又はハロゲン酸塩の濃度を減少させることができる。 According to the method for treating an etching solution of the present invention, a novel etching solution containing at least one component selected from the group consisting of inorganic acids, manganese salts, and perhalogenates and perhalogenates as an active ingredient By the simple method of electrolytic oxidation, the concentration of halogen acid and / or halogen acid salt that increases in the etching solution can be reduced.
よって、本発明の電解処理方法を採用することによって、上記したマンガン塩を有効成分とする安全性の高いエッチング液について、そのエッチング性能を長期間維持することが可能となる。 Therefore, by adopting the electrolytic treatment method of the present invention, it is possible to maintain the etching performance for a long period of time with respect to a highly safe etching solution containing the above-described manganese salt as an active ingredient.
以下、実施例を挙げて本発明を更に詳細に説明する。 Hereinafter, the present invention will be described in more detail with reference to examples.
実施例1
図1に示す構造の電解処理装置を用いて、下記表1に示す条件で電解処理を行った。
Example 1
The electrolytic treatment was performed under the conditions shown in Table 1 below using the electrolytic treatment apparatus having the structure shown in FIG.
処理対象のエッチング液の組成を下記表2に示す。各エッチング液の液量は、1Lとした。 The composition of the etching solution to be processed is shown in Table 2 below. The amount of each etching solution was 1 L.
上記した条件による電解処理後のエッチング液の組成を下記表3に示す。 The composition of the etching solution after electrolytic treatment under the above conditions is shown in Table 3 below.
以上の結果から明らかなように、表2に示した各組成のエッチング液について、電解処理を行うことによって、ハロゲン酸またはハロゲン酸塩の濃度を低下させて、過ハロゲン酸又は過ハロゲン酸塩の濃度を上昇させることができることが判る。 As is clear from the above results, the etching solution having each composition shown in Table 2 is subjected to an electrolytic treatment to reduce the concentration of the halogen acid or the halogen acid salt, thereby reducing the concentration of the perhalogen acid or the perhalogen acid salt. It can be seen that the concentration can be increased.
実施例2
下記表4に示す組成のエッチング液を処理対象として、実施例1と同様の条件で電解酸化処理を行った。電解開始後、2時間、5時間及び10時間経過後のエッチング液の組成を下記表4に示す。
Example 2
The electrolytic oxidation treatment was performed under the same conditions as in Example 1 with the etching solution having the composition shown in Table 4 below as the treatment target. The composition of the etching solution after the elapse of 2 hours, 5 hours and 10 hours after the start of electrolysis is shown in Table 4 below.
以上の結果から明らかなように、電解時間の経過と共に、ヨウ素酸ナトリウム濃度が低下し、過ヨウ素酸ナトリウム濃度が上昇することが判る。 As is apparent from the above results, it can be seen that the sodium iodate concentration decreases and the sodium periodate concentration increases with the lapse of electrolysis time.
耐分解性試験
実施例1で用いたNo.10のエッチング液について、陽極電解酸化処理前と陽極電解処理後のエッチング液を65℃で48時間放置した後、過マンガン酸カリウム、過ヨウ素酸ナトリウム及びヨウ素酸ナトリウムの各成分の濃度を測定した。尚、陽極電解酸化処理後のエッチング液については、過マンガン酸カリウムを添加して陽極電解酸化処理前のエッチング液と同じ0.5g/Lとして耐分解性試験を行った。
Decomposition resistance test No. 1 used in Example 1. For the etching solution of No. 10, the etching solution before and after the anodic electrolytic treatment was allowed to stand at 65 ° C. for 48 hours, and then the concentration of each component of potassium permanganate, sodium periodate and sodium iodate was measured. . In addition, about the etching liquid after anodic electrolytic oxidation treatment, the potassium permanganate was added and the decomposition resistance test was done as 0.5 g / L same as the etching liquid before anodic electrolytic oxidation treatment.
放置後のエッチング液中の各成分の濃度を下記表5に示す。 Table 5 below shows the concentration of each component in the etching solution after standing.
以上の結果から明らかなように、陽極電解酸化処理を行っていないエッチング液については、65℃で48時間放置後に、過マンガン酸カリウムと過ヨウ素酸ナトリウムの濃度が急激に低下して、ヨウ素酸ナトリウム量が増加しており、エッチング液の分解が進行したことが判る。これに対して、陽極電解酸化処理を行ったエッチング液については、放置後にも濃度変化は認められず、良好な安定性を有することが判る。 As is clear from the above results, the etching solution that was not subjected to the anodic electrolytic oxidation treatment was allowed to stand at 65 ° C. for 48 hours, and then the concentrations of potassium permanganate and sodium periodate were drastically decreased. It can be seen that the amount of sodium has increased and the decomposition of the etching solution has progressed. On the other hand, it can be seen that the etching solution subjected to the anodic electrolytic oxidation treatment does not change in concentration even after being left and has good stability.
エッチング性能試験
上記した方法で耐分解性試験を行う前のエッチング液と耐分解性試験後の各エッチング液を用いて、ABS樹脂(UMG ABS(株)製、商標名:サイコラック3001M)の平板(10cm×5cm×0.3cm、表面積約1dm2)を被めっき物として下記表6に示す処理工程で無電解めっきを行った。
Etching performance test A flat plate of ABS resin (trade name: Psycolac 3001M, manufactured by UMG ABS Co., Ltd.) using the etching solution before performing the decomposition resistance test by the above-described method and each etching solution after the decomposition resistance test. Electroless plating was performed in the processing steps shown in Table 6 below using (10 cm × 5 cm × 0.3 cm, surface area of about 1 dm 2 ) as an object to be plated.
上記した方法で無電解めっき皮膜を形成した後、試料表面における無電解めっき皮膜の形成された割合を測定して、無電解めっきの析出性を評価した。 After the electroless plating film was formed by the above-described method, the ratio of the electroless plating film formed on the sample surface was measured to evaluate the depositability of the electroless plating.
次いで、硫酸銅めっき浴を用いて、電流密度3A/dm2、温度25℃で電気めっき処理を120分間行い、銅めっき皮膜を形成した。この様にして得られた試料について、80℃で120分間乾燥させ、室温になるまで放置した後、めっき皮膜に10mm幅の切り目を入れ、引張り試験器((株)島津製作所製、オートグラフSD−100−C)を用いて、樹脂に対して垂直にめっき皮膜を引張り、ピール強度を測定した。 Next, using a copper sulfate plating bath, an electroplating treatment was performed for 120 minutes at a current density of 3 A / dm 2 and a temperature of 25 ° C. to form a copper plating film. The sample thus obtained was dried at 80 ° C. for 120 minutes and left to reach room temperature, and then a 10 mm wide cut was made in the plating film, and a tensile tester (manufactured by Shimadzu Corporation, Autograph SD). −100-C), the plating film was pulled perpendicular to the resin, and the peel strength was measured.
以上の結果を下記表7に示す。 The above results are shown in Table 7 below.
以上の結果から明らかなように、陽極電解酸化処理を行う前のエッチング液については、65℃で48時間放置した場合に、エッチング性能が大きく低下して、無電解めっきの析出性及びめっき皮膜の密着性が大きく低下することが判る。これに対して、陽極電解酸化処理を行ったエッチング液については、放置試験後においても良好なエッチング性能を維持しており、エッチング液の安定性が大きく向上したことが判る。 As is clear from the above results, the etching solution before the anodic electrolytic oxidation treatment, when left at 65 ° C. for 48 hours, greatly deteriorates the etching performance, and the electroless plating deposition properties and the plating film It can be seen that the adhesion is greatly reduced. On the other hand, it can be seen that the etching solution subjected to the anodic electrolytic oxidation treatment maintained good etching performance even after the standing test, and the stability of the etching solution was greatly improved.
実施例3
上記表2に記載したNo.1,3,5,7,及び9の各エッチング液を用いて、エッチング液に対して空気撹拌を行いながら、上記表1に記載した電解条件と同一の条件で電解処理を行った。電解処理後のエッチング液の組成を下記表8に示す。
Example 3
No. described in Table 2 above. Using each of the etching solutions 1, 3, 5, 7, and 9, electrolytic treatment was performed under the same conditions as those described in Table 1 above while stirring the air in the etching solution. The composition of the etching solution after the electrolytic treatment is shown in Table 8 below.
表8から明らかなように、空気撹拌下に陽極電解酸化処理を行うことによって、ハロゲン酸又はハロゲン酸塩の濃度を大きく低下させることができた。また、この結果を、表3に記載されている無撹拌状態で電解処理を行った場合の結果と比較すると、空気撹拌を行うことによって、ハロゲン酸又はハロゲン酸塩の濃度をより大きく低下させることができることが判る。 As is clear from Table 8, the concentration of the halogen acid or the halogen acid salt could be greatly reduced by performing the anodic electrolytic oxidation treatment with air stirring. Moreover, when this result is compared with the result in the case where the electrolytic treatment is performed in an unstirred state described in Table 3, the concentration of the halogen acid or the halide salt is greatly reduced by performing the air stirring. You can see that
Claims (5)
使用によってハロゲン酸及び/又はハロゲン酸塩の濃度が上昇したエッチング液を陽極電解酸化処理することを特徴とする方法。 From an aqueous solution containing 20 to 1200 g / L of inorganic acid, 0.01 to 40 g / L of manganese salt, and 1 to 200 g / L of at least one component selected from the group consisting of perhalogenates and perhalogenates. An etching solution electrolytic treatment method comprising:
An anodic electrolytic oxidation treatment of an etching solution in which the concentration of a halogen acid and / or a halogen acid salt is increased by use.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008105547A JP4849420B2 (en) | 2007-06-20 | 2008-04-15 | Method for electrolytic treatment of etching solution |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007162044 | 2007-06-20 | ||
JP2007162044 | 2007-06-20 | ||
JP2008105547A JP4849420B2 (en) | 2007-06-20 | 2008-04-15 | Method for electrolytic treatment of etching solution |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009022948A JP2009022948A (en) | 2009-02-05 |
JP4849420B2 true JP4849420B2 (en) | 2012-01-11 |
Family
ID=40395279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008105547A Active JP4849420B2 (en) | 2007-06-20 | 2008-04-15 | Method for electrolytic treatment of etching solution |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4849420B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010138434A (en) * | 2008-12-10 | 2010-06-24 | Okuno Chem Ind Co Ltd | Method for electrolytically treating etchant |
US9657226B2 (en) | 2013-10-22 | 2017-05-23 | Okuno Chemical Industries Co., Ltd. | Composition for etching treatment of resin material |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100133507A (en) * | 2008-05-01 | 2010-12-21 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | Low ph mixtures for the removal of high density implanted resist |
EP2639332A1 (en) * | 2012-03-15 | 2013-09-18 | Atotech Deutschland GmbH | Method for metallising non-conductive plastic surfaces |
JP2017101304A (en) * | 2015-12-04 | 2017-06-08 | 株式会社Jcu | Etching method of resin surface, and plating method on resin utilizing the same |
CN107986399A (en) * | 2017-11-16 | 2018-05-04 | 浙江海洋大学 | A kind of iron-carbon micro-electrolysis filler and preparation method thereof |
EP3825441A1 (en) * | 2019-11-21 | 2021-05-26 | COVENTYA S.p.A. | An electrolytic treatment device for preparing plastic parts to be metallized and a method for etching plastic parts |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5914052B2 (en) * | 1976-06-17 | 1984-04-03 | 松下電器産業株式会社 | Resin surface treatment agent and resin surface treatment method |
JPS5321775A (en) * | 1976-08-12 | 1978-02-28 | Masahiko Nakabayashi | Method of producing printed circuit board |
FR2638766B1 (en) * | 1988-11-09 | 1990-12-14 | Atochem | CONTINUOUS PROCESS FOR THE MANUFACTURE OF ALKALINE METAL PERCHLORATE |
JP3112807B2 (en) * | 1995-03-30 | 2000-11-27 | 日鉄鉱業株式会社 | Method of treating iron chloride solution containing nickel |
JP2002530529A (en) * | 1998-11-13 | 2002-09-17 | エントン・オーエムアイ・インコーポレイテッド | Metallization process for plastic surfaces |
JP2000303192A (en) * | 1999-04-16 | 2000-10-31 | Nagai Seiyakusho:Kk | Capacity recovering and maintaining device for etching solution |
JP2001261513A (en) * | 2000-03-16 | 2001-09-26 | Mitsui Chemicals Inc | Method of retarding growth of microorganism |
JP4224552B2 (en) * | 2002-04-05 | 2009-02-18 | 奥野製薬工業株式会社 | How to adjust the plating bath |
JP4778320B2 (en) * | 2006-01-24 | 2011-09-21 | ペルメレック電極株式会社 | Electrosynthesis of perchloric acid compounds |
US8394289B2 (en) * | 2006-04-18 | 2013-03-12 | Okuno Chemicals Industries Co., Ltd. | Composition for etching treatment of resin molded article |
-
2008
- 2008-04-15 JP JP2008105547A patent/JP4849420B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010138434A (en) * | 2008-12-10 | 2010-06-24 | Okuno Chem Ind Co Ltd | Method for electrolytically treating etchant |
US9657226B2 (en) | 2013-10-22 | 2017-05-23 | Okuno Chemical Industries Co., Ltd. | Composition for etching treatment of resin material |
Also Published As
Publication number | Publication date |
---|---|
JP2009022948A (en) | 2009-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5403535B2 (en) | Method for electrolytic treatment of etching solution | |
JP4849420B2 (en) | Method for electrolytic treatment of etching solution | |
JP5830807B2 (en) | Composition for etching treatment of resin material | |
JP5895066B2 (en) | Etching of plastic using acidic solution containing trivalent manganese | |
TWI489007B (en) | Electrolytic generation of manganese (iii) ions in strong sulfuric acid | |
US10895016B2 (en) | Electrolytic generation of manganese (III) ions in strong sulfuric acid | |
EP3168326B2 (en) | Resin plating method | |
JP2009052069A (en) | Electrode for electrolysis | |
JP2012062556A (en) | Electrode for electrolysis, positive electrode for ozone generation by electrolysis, positive electrode for persulfuric acid generation by electrolysis, and positive electrode for chromium electrolytic oxidation | |
EP3168332B1 (en) | Electrolytic stripping agent for removing palladium from a jig | |
JPH04231491A (en) | Electric catalyzer cathode and its manufacture | |
TW201420813A (en) | Electrode for oxygen evolution in industrial electrochemical processes | |
JP7330490B2 (en) | Electrodes for ozone generation | |
JP2024502947A (en) | Electrolytic cells and self-cleaning electrochlorination systems for electrochlorination methods | |
JP4403227B2 (en) | Metal oxide film or rust removal water, Metal oxide film or rust removal method using the oxide film or rust removal water | |
JP3406403B2 (en) | Electrode for strong acid water | |
JPS6187897A (en) | Anticorrosive treatment of stainless steel |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110323 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110907 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110920 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111011 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4849420 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141028 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |