TW200705574A - Plasma processing apparatus and method - Google Patents

Plasma processing apparatus and method

Info

Publication number
TW200705574A
TW200705574A TW095111012A TW95111012A TW200705574A TW 200705574 A TW200705574 A TW 200705574A TW 095111012 A TW095111012 A TW 095111012A TW 95111012 A TW95111012 A TW 95111012A TW 200705574 A TW200705574 A TW 200705574A
Authority
TW
Taiwan
Prior art keywords
dielectrics
microwave
dielectric
plasma
plasma processing
Prior art date
Application number
TW095111012A
Other languages
English (en)
Inventor
Masayuki Kitamura
Masaki Hirayama
Tadahiro Ohmi
Original Assignee
Tokyo Electron Ltd
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Univ Tohoku filed Critical Tokyo Electron Ltd
Publication of TW200705574A publication Critical patent/TW200705574A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW095111012A 2005-03-30 2006-03-29 Plasma processing apparatus and method TW200705574A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005099836 2005-03-30
JP2006067835A JP5013393B2 (ja) 2005-03-30 2006-03-13 プラズマ処理装置と方法

Publications (1)

Publication Number Publication Date
TW200705574A true TW200705574A (en) 2007-02-01

Family

ID=37186161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111012A TW200705574A (en) 2005-03-30 2006-03-29 Plasma processing apparatus and method

Country Status (4)

Country Link
US (1) US20060238132A1 (zh)
JP (1) JP5013393B2 (zh)
KR (2) KR20060105529A (zh)
TW (1) TW200705574A (zh)

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JP2007317499A (ja) * 2006-05-25 2007-12-06 Shimadzu Corp 表面波プラズマ源
JP2008098474A (ja) * 2006-10-13 2008-04-24 Tokyo Electron Ltd プラズマ処理装置とその運転方法、プラズマ処理方法および電子装置の製造方法
US7771541B2 (en) * 2007-03-22 2010-08-10 International Business Machines Corporation Method of removing metallic, inorganic and organic contaminants from chip passivation layer surfaces
JP2008251499A (ja) * 2007-03-30 2008-10-16 Tokyo Electron Ltd 処理装置および処理装置の使用方法
JP5459899B2 (ja) 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5364293B2 (ja) * 2007-06-01 2013-12-11 株式会社半導体エネルギー研究所 表示装置の作製方法およびプラズマｃｖｄ装置
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
TW200908076A (en) * 2007-06-11 2009-02-16 Tokyo Electron Co Ltd Plasma processing system and use of plasma processing system
DE112008001130T5 (de) * 2007-06-11 2010-04-29 Tokyo Electron Ltd. Plasmabearbeitungsvorrichtung, Energieversorgungsvorrichtung sowie Verfahren zum Betrieb der Plasmabearbeitungsvorrichtung
KR101183039B1 (ko) * 2007-06-11 2012-09-20 고쿠리츠다이가쿠호진 도호쿠다이가쿠 플라즈마 처리 장치 및 플라즈마 처리 장치의 사용 방법
JP2009021220A (ja) * 2007-06-11 2009-01-29 Tokyo Electron Ltd プラズマ処理装置、アンテナおよびプラズマ処理装置の使用方法
KR101117150B1 (ko) 2007-06-11 2012-03-13 고쿠리츠다이가쿠호진 도호쿠다이가쿠 플라즈마 처리 장치 및 처리 방법
JP5331389B2 (ja) * 2007-06-15 2013-10-30 株式会社半導体エネルギー研究所 表示装置の作製方法
TWI456663B (zh) 2007-07-20 2014-10-11 Semiconductor Energy Lab 顯示裝置之製造方法
JP5058084B2 (ja) * 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP5216446B2 (ja) * 2007-07-27 2013-06-19 株式会社半導体エネルギー研究所 プラズマｃｖｄ装置及び表示装置の作製方法
US8030147B2 (en) * 2007-09-14 2011-10-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor and display device including the thin film transistor
JP5311957B2 (ja) * 2007-10-23 2013-10-09 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5311955B2 (ja) 2007-11-01 2013-10-09 株式会社半導体エネルギー研究所 表示装置の作製方法
US8187956B2 (en) * 2007-12-03 2012-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
US8591650B2 (en) * 2007-12-03 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US20090179160A1 (en) * 2008-01-16 2009-07-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor substrate manufacturing apparatus
US7855153B2 (en) * 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
JP4524354B2 (ja) 2008-02-28 2010-08-18 国立大学法人東北大学 マイクロ波プラズマ処理装置、それに用いる誘電体窓部材および誘電体窓部材の製造方法
JP5213530B2 (ja) * 2008-06-11 2013-06-19 東京エレクトロン株式会社 プラズマ処理装置
US20110114600A1 (en) * 2008-06-11 2011-05-19 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5324138B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5324137B2 (ja) * 2008-06-11 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5478058B2 (ja) * 2008-12-09 2014-04-23 国立大学法人東北大学 プラズマ処理装置
US8258025B2 (en) * 2009-08-07 2012-09-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and thin film transistor
US9177761B2 (en) 2009-08-25 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Plasma CVD apparatus, method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
KR101747158B1 (ko) 2009-11-06 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
US8343858B2 (en) * 2010-03-02 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
JP2012089334A (ja) 2010-10-19 2012-05-10 Tokyo Electron Ltd マイクロ波プラズマ源およびプラズマ処理装置
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
US9397380B2 (en) * 2011-01-28 2016-07-19 Applied Materials, Inc. Guided wave applicator with non-gaseous dielectric for plasma chamber
JP6356415B2 (ja) * 2013-12-16 2018-07-11 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置
JP6283438B2 (ja) * 2017-03-28 2018-02-21 東京エレクトロン株式会社 マイクロ波放射アンテナ、マイクロ波プラズマ源およびプラズマ処理装置
KR102479923B1 (ko) * 2018-08-22 2022-12-20 어플라이드 머티어리얼스, 인코포레이티드 고밀도 플라즈마 강화 화학 기상 증착 챔버
JP7346698B2 (ja) * 2019-07-15 2023-09-19 アプライド マテリアルズ インコーポレイテッド フラットパネルディスプレイ用の大面積高密度プラズマ処理チャンバ
WO2023212325A1 (en) * 2022-04-29 2023-11-02 Cornell University Microwave annealer for semiconductor wafers

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JPH08250477A (ja) * 1995-03-14 1996-09-27 Sumitomo Metal Ind Ltd プラズマ装置
US6059922A (en) * 1996-11-08 2000-05-09 Kabushiki Kaisha Toshiba Plasma processing apparatus and a plasma processing method
JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3599619B2 (ja) * 1999-11-09 2004-12-08 シャープ株式会社 プラズマプロセス装置
JP3645768B2 (ja) * 1999-12-07 2005-05-11 シャープ株式会社 プラズマプロセス装置
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP2002280196A (ja) * 2001-03-15 2002-09-27 Micro Denshi Kk マイクロ波を利用したプラズマ発生装置
JP3960775B2 (ja) * 2001-11-08 2007-08-15 シャープ株式会社 プラズマプロセス装置および処理装置
JP4020679B2 (ja) * 2002-04-09 2007-12-12 シャープ株式会社 プラズマプロセス装置
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
JP2004153240A (ja) * 2002-10-09 2004-05-27 Advanced Lcd Technologies Development Center Co Ltd プラズマ処理装置
JP3677017B2 (ja) * 2002-10-29 2005-07-27 東京エレクトロン株式会社 スロットアレイアンテナおよびプラズマ処理装置
TW200415726A (en) * 2002-12-05 2004-08-16 Adv Lcd Tech Dev Ct Co Ltd Plasma processing apparatus and plasma processing method
JP4029765B2 (ja) * 2003-01-30 2008-01-09 株式会社島津製作所 プラズマ処理装置
JP4073816B2 (ja) * 2003-03-31 2008-04-09 シャープ株式会社 プラズマプロセス装置
JP4396166B2 (ja) * 2003-07-10 2010-01-13 株式会社島津製作所 表面波励起プラズマ処理装置

Also Published As

Publication number Publication date
JP5013393B2 (ja) 2012-08-29
JP2006310794A (ja) 2006-11-09
US20060238132A1 (en) 2006-10-26
KR20060105529A (ko) 2006-10-11
KR100876750B1 (ko) 2009-01-07
KR20080006650A (ko) 2008-01-16

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