TW200634897A - Method for fabricating semiconductor device - Google Patents
Method for fabricating semiconductor deviceInfo
- Publication number
- TW200634897A TW200634897A TW094119536A TW94119536A TW200634897A TW 200634897 A TW200634897 A TW 200634897A TW 094119536 A TW094119536 A TW 094119536A TW 94119536 A TW94119536 A TW 94119536A TW 200634897 A TW200634897 A TW 200634897A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- gate
- doped polysilicon
- forming
- oxide film
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 4
- 229920005591 polysilicon Polymers 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000002955 isolation Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000005498 polishing Methods 0.000 abstract 1
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
- A47L15/00—Washing or rinsing machines for crockery or tableware
- A47L15/0097—Combination of dishwashers with other household appliances
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47L—DOMESTIC WASHING OR CLEANING; SUCTION CLEANERS IN GENERAL
- A47L15/00—Washing or rinsing machines for crockery or tableware
- A47L15/42—Details
- A47L15/4278—Nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C18/00—Disintegrating by knives or other cutting or tearing members which chop material into fragments
- B02C18/06—Disintegrating by knives or other cutting or tearing members which chop material into fragments with rotating knives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
- H01L21/823425—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures manufacturing common source or drain regions between a plurality of conductor-insulator-semiconductor structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
- H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Food Science & Technology (AREA)
- Semiconductor Memories (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050022618A KR100596833B1 (ko) | 2005-03-18 | 2005-03-18 | 반도체 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI261295B TWI261295B (en) | 2006-09-01 |
TW200634897A true TW200634897A (en) | 2006-10-01 |
Family
ID=36933986
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094119536A TWI261295B (en) | 2005-03-18 | 2005-06-13 | Method for fabricating semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US7332397B2 (zh) |
JP (1) | JP5047475B2 (zh) |
KR (1) | KR100596833B1 (zh) |
CN (1) | CN100576505C (zh) |
DE (1) | DE102005026315B4 (zh) |
TW (1) | TWI261295B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101374335B1 (ko) * | 2007-09-10 | 2014-03-17 | 삼성전자주식회사 | 국부적으로 두꺼운 유전막을 갖는 리세스 채널트랜지스터의 제조방법 및 관련된 소자 |
JP2009182114A (ja) * | 2008-01-30 | 2009-08-13 | Elpida Memory Inc | 半導体装置およびその製造方法 |
CN101572224B (zh) * | 2008-04-30 | 2011-05-04 | 中芯国际集成电路制造(北京)有限公司 | 多晶硅浮栅的制作方法以及半导体器件的制作方法 |
KR101051577B1 (ko) | 2009-06-30 | 2011-07-22 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 형성 방법 |
US8507996B2 (en) * | 2009-09-22 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Block contact plugs for MOS devices |
KR101095802B1 (ko) * | 2010-01-07 | 2011-12-21 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조 방법 |
KR101164974B1 (ko) * | 2010-12-15 | 2012-07-12 | 에스케이하이닉스 주식회사 | 매립게이트를 구비한 반도체 장치 제조방법 |
KR102188883B1 (ko) * | 2013-12-13 | 2020-12-14 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
CN108257957A (zh) * | 2016-12-29 | 2018-07-06 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0621451A (ja) * | 1992-07-02 | 1994-01-28 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH06318680A (ja) * | 1993-05-10 | 1994-11-15 | Nec Corp | 半導体記憶装置およびその製造方法 |
JPH07161977A (ja) * | 1993-12-06 | 1995-06-23 | Hitachi Ltd | 半導体装置とその製造方法 |
KR0136995B1 (ko) * | 1994-09-08 | 1998-04-24 | 김주용 | 비휘발성메모리셀의제조방법 |
JP2751909B2 (ja) * | 1996-02-26 | 1998-05-18 | 日本電気株式会社 | 半導体装置の製造方法 |
US5808340A (en) * | 1996-09-18 | 1998-09-15 | Advanced Micro Devices, Inc. | Short channel self aligned VMOS field effect transistor |
US5780340A (en) * | 1996-10-30 | 1998-07-14 | Advanced Micro Devices, Inc. | Method of forming trench transistor and isolation trench |
JP3295393B2 (ja) * | 1998-10-26 | 2002-06-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6204128B1 (en) * | 1998-10-26 | 2001-03-20 | Matsushita Electronics Corporation | Method for fabricating semiconductor device |
US6303448B1 (en) * | 1998-11-05 | 2001-10-16 | Taiwan Semiconductor Manufacturing Company | Method for fabricating raised source/drain structures |
KR100370129B1 (ko) * | 2000-08-01 | 2003-01-30 | 주식회사 하이닉스반도체 | 반도체 소자 및 그의 제조방법 |
KR100574487B1 (ko) * | 2002-07-05 | 2006-04-27 | 주식회사 하이닉스반도체 | 반도체소자의 mos 트랜지스터 제조방법 |
KR100835505B1 (ko) * | 2002-07-18 | 2008-06-04 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
KR100539276B1 (ko) * | 2003-04-02 | 2005-12-27 | 삼성전자주식회사 | 게이트 라인을 포함하는 반도체 장치 및 이의 제조 방법 |
KR20040102720A (ko) * | 2003-05-29 | 2004-12-08 | 주식회사 하이닉스반도체 | 반도체소자의 제조방법 |
JP2005019584A (ja) | 2003-06-25 | 2005-01-20 | Sony Corp | 半導体装置および半導体装置の製造方法 |
-
2005
- 2005-03-18 KR KR1020050022618A patent/KR100596833B1/ko not_active IP Right Cessation
- 2005-06-07 DE DE102005026315A patent/DE102005026315B4/de not_active Expired - Fee Related
- 2005-06-10 US US11/149,166 patent/US7332397B2/en not_active Expired - Fee Related
- 2005-06-13 TW TW094119536A patent/TWI261295B/zh not_active IP Right Cessation
- 2005-06-17 JP JP2005177725A patent/JP5047475B2/ja not_active Expired - Fee Related
- 2005-06-23 CN CN200510079541A patent/CN100576505C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2006261625A (ja) | 2006-09-28 |
US20060211229A1 (en) | 2006-09-21 |
US7332397B2 (en) | 2008-02-19 |
KR100596833B1 (ko) | 2006-07-04 |
DE102005026315B4 (de) | 2010-11-25 |
CN1835208A (zh) | 2006-09-20 |
DE102005026315A1 (de) | 2006-09-21 |
JP5047475B2 (ja) | 2012-10-10 |
TWI261295B (en) | 2006-09-01 |
CN100576505C (zh) | 2009-12-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |