CN104488079B - 具有合并鳍和垂直硅化物的finfet - Google Patents
具有合并鳍和垂直硅化物的finfet Download PDFInfo
- Publication number
- CN104488079B CN104488079B CN201280064723.7A CN201280064723A CN104488079B CN 104488079 B CN104488079 B CN 104488079B CN 201280064723 A CN201280064723 A CN 201280064723A CN 104488079 B CN104488079 B CN 104488079B
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- Prior art keywords
- layer
- fin structure
- box
- gate stack
- area
- Prior art date
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- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 50
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 125000006850 spacer group Chemical group 0.000 claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 230000008569 process Effects 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009933 burial Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/337,874 US8637931B2 (en) | 2011-12-27 | 2011-12-27 | finFET with merged fins and vertical silicide |
US13/337,874 | 2011-12-27 | ||
PCT/US2012/071579 WO2013101790A2 (en) | 2011-12-27 | 2012-12-24 | Finfet with merged fins and vertical silicide |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104488079A CN104488079A (zh) | 2015-04-01 |
CN104488079B true CN104488079B (zh) | 2017-04-26 |
Family
ID=48484259
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280064723.7A Active CN104488079B (zh) | 2011-12-27 | 2012-12-24 | 具有合并鳍和垂直硅化物的finfet |
Country Status (5)
Country | Link |
---|---|
US (2) | US8637931B2 (zh) |
CN (1) | CN104488079B (zh) |
DE (1) | DE112012004934B4 (zh) |
GB (1) | GB2511445B (zh) |
WO (1) | WO2013101790A2 (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8778744B2 (en) * | 2011-06-24 | 2014-07-15 | Institute of Microelectronics, Chinese Academy of Sciences | Method for manufacturing semiconductor field effect transistor |
US9634000B2 (en) * | 2013-03-14 | 2017-04-25 | International Business Machines Corporation | Partially isolated fin-shaped field effect transistors |
US8951870B2 (en) * | 2013-03-14 | 2015-02-10 | International Business Machines Corporation | Forming strained and relaxed silicon and silicon germanium fins on the same wafer |
US9006805B2 (en) | 2013-08-07 | 2015-04-14 | United Microelectronics Corp. | Semiconductor device |
US8993406B1 (en) | 2013-09-10 | 2015-03-31 | International Business Machines Corporation | FinFET device having a merged source drain region under contact areas and unmerged fins between contact areas, and a method of manufacturing same |
US9040380B2 (en) * | 2013-09-11 | 2015-05-26 | GlobalFoundries, Inc. | Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating same |
US9842928B2 (en) | 2013-12-23 | 2017-12-12 | Intel Corporation | Tensile source drain III-V transistors for mobility improved n-MOS |
US9159617B2 (en) | 2014-01-24 | 2015-10-13 | Globalfoundries Inc. | Structure and method of forming silicide on fins |
KR102178831B1 (ko) | 2014-03-13 | 2020-11-13 | 삼성전자 주식회사 | 스트레서를 갖는 반도체 소자 형성 방법 및 관련된 소자 |
US9299780B2 (en) | 2014-03-26 | 2016-03-29 | International Business Machines Corporation | Constrained epitaxial source/drain regions on semiconductor-on-insulator finFET device |
US9590105B2 (en) * | 2014-04-07 | 2017-03-07 | National Chiao-Tung University | Semiconductor device with metal alloy over fin, conductive layer over channel region of fin, and semiconductive layer over conductive layer and formation thereof |
US9214462B2 (en) | 2014-05-01 | 2015-12-15 | International Business Machines Corporation | Recessed source drain contact regions independent of device pitch by unmerged epitaxy on fin portions |
US9391200B2 (en) | 2014-06-18 | 2016-07-12 | Stmicroelectronics, Inc. | FinFETs having strained channels, and methods of fabricating finFETs having strained channels |
US9716160B2 (en) | 2014-08-01 | 2017-07-25 | International Business Machines Corporation | Extended contact area using undercut silicide extensions |
US10475886B2 (en) * | 2014-12-16 | 2019-11-12 | International Business Machines Corporation | Modified fin cut after epitaxial growth |
US9577096B2 (en) | 2015-05-19 | 2017-02-21 | International Business Machines Corporation | Salicide formation on replacement metal gate finFet devices |
US10158003B2 (en) | 2015-08-12 | 2018-12-18 | International Business Machines Corporation | Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins |
US9691897B2 (en) * | 2015-09-28 | 2017-06-27 | Globalfoundries Inc. | Three-dimensional semiconductor transistor with gate contact in active region |
US9570555B1 (en) | 2015-10-29 | 2017-02-14 | International Business Machines Corporation | Source and drain epitaxial semiconductor material integration for high voltage semiconductor devices |
US9466693B1 (en) | 2015-11-17 | 2016-10-11 | International Business Machines Corporation | Self aligned replacement metal source/drain finFET |
US9425108B1 (en) | 2015-12-05 | 2016-08-23 | International Business Machines Corporation | Method to prevent lateral epitaxial growth in semiconductor devices |
US9590074B1 (en) | 2015-12-05 | 2017-03-07 | International Business Machines Corporation | Method to prevent lateral epitaxial growth in semiconductor devices |
US9853127B1 (en) * | 2016-06-22 | 2017-12-26 | International Business Machines Corporation | Silicidation of bottom source/drain sheet using pinch-off sacrificial spacer process |
US9859403B1 (en) | 2016-07-22 | 2018-01-02 | Globalfoundries Inc. | Multiple step thin film deposition method for high conformality |
US11374126B2 (en) * | 2018-09-27 | 2022-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | FinFET structure with fin top hard mask and method of forming the same |
US11935887B2 (en) * | 2019-03-28 | 2024-03-19 | Intel Corporation | Source or drain structures with vertical trenches |
Family Cites Families (34)
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US5079182A (en) | 1990-04-02 | 1992-01-07 | National Semiconductor Corporation | Bicmos device having self-aligned well tap and method of fabrication |
FI85205C (fi) | 1990-04-12 | 1992-03-10 | Nokia Mobile Phones Ltd | Antennomkopplare. |
US6690072B2 (en) | 2002-05-24 | 2004-02-10 | International Business Machines Corporation | Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned COSI2 on raised source drain Si/SiGe device |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US7176522B2 (en) | 2003-11-25 | 2007-02-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having high drive current and method of manufacturing thereof |
US7105390B2 (en) * | 2003-12-30 | 2006-09-12 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
JP2005294789A (ja) * | 2004-03-10 | 2005-10-20 | Toshiba Corp | 半導体装置及びその製造方法 |
US7300837B2 (en) * | 2004-04-30 | 2007-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd | FinFET transistor device on SOI and method of fabrication |
US7361958B2 (en) * | 2004-09-30 | 2008-04-22 | Intel Corporation | Nonplanar transistors with metal gate electrodes |
US7736984B2 (en) | 2005-09-23 | 2010-06-15 | Semiconductor Components Industries, Llc | Method of forming a low resistance semiconductor contact and structure therefor |
US7531423B2 (en) | 2005-12-22 | 2009-05-12 | International Business Machines Corporation | Reduced-resistance finFETs by sidewall silicidation and methods of manufacturing the same |
US7479437B2 (en) | 2006-04-28 | 2009-01-20 | International Business Machines Corporation | Method to reduce contact resistance on thin silicon-on-insulator device |
JP4473889B2 (ja) * | 2007-04-26 | 2010-06-02 | 株式会社東芝 | 半導体装置 |
US7851865B2 (en) * | 2007-10-17 | 2010-12-14 | International Business Machines Corporation | Fin-type field effect transistor structure with merged source/drain silicide and method of forming the structure |
US7812370B2 (en) | 2007-07-25 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling |
US8264048B2 (en) | 2008-02-15 | 2012-09-11 | Intel Corporation | Multi-gate device having a T-shaped gate structure |
US8008145B2 (en) | 2008-09-10 | 2011-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | High-K metal gate structure fabrication method including hard mask |
US7927942B2 (en) | 2008-12-19 | 2011-04-19 | Asm International N.V. | Selective silicide process |
US7736094B1 (en) | 2009-02-24 | 2010-06-15 | The United States Of America As Represented By The Secretary Of The Navy | Self-contained burying device for submerged environments |
US8395191B2 (en) | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US8110467B2 (en) * | 2009-04-21 | 2012-02-07 | International Business Machines Corporation | Multiple Vt field-effect transistor devices |
US8236658B2 (en) | 2009-06-03 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods for forming a transistor with a strained channel |
US20110001169A1 (en) | 2009-07-01 | 2011-01-06 | International Business Machines Corporation | Forming uniform silicide on 3d structures |
US8202780B2 (en) | 2009-07-31 | 2012-06-19 | International Business Machines Corporation | Method for manufacturing a FinFET device comprising a mask to define a gate perimeter and another mask to define fin regions |
US8169024B2 (en) * | 2009-08-18 | 2012-05-01 | International Business Machines Corporation | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
US8362568B2 (en) * | 2009-08-28 | 2013-01-29 | International Business Machines Corporation | Recessed contact for multi-gate FET optimizing series resistance |
US8138030B2 (en) * | 2009-09-15 | 2012-03-20 | International Business Machines Corporation | Asymmetric finFET device with improved parasitic resistance and capacitance |
US8043920B2 (en) | 2009-09-17 | 2011-10-25 | International Business Machines Corporation | finFETS and methods of making same |
US8426923B2 (en) * | 2009-12-02 | 2013-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-gate semiconductor device and method |
US8373238B2 (en) * | 2009-12-03 | 2013-02-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs with multiple Fin heights |
US8242561B2 (en) | 2010-02-09 | 2012-08-14 | International Business Machines Corporation | Semiconductor devices with improved self-aligned contact areas |
US8937353B2 (en) | 2010-03-01 | 2015-01-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual epitaxial process for a finFET device |
US8377759B2 (en) * | 2010-08-17 | 2013-02-19 | International Business Machines Corporation | Controlled fin-merging for fin type FET devices |
US8445334B1 (en) * | 2011-12-20 | 2013-05-21 | International Business Machines Corporation | SOI FinFET with recessed merged Fins and liner for enhanced stress coupling |
-
2011
- 2011-12-27 US US13/337,874 patent/US8637931B2/en active Active
-
2012
- 2012-09-14 US US13/617,709 patent/US8455313B1/en active Active
- 2012-12-24 WO PCT/US2012/071579 patent/WO2013101790A2/en active Application Filing
- 2012-12-24 GB GB1408705.0A patent/GB2511445B/en not_active Expired - Fee Related
- 2012-12-24 CN CN201280064723.7A patent/CN104488079B/zh active Active
- 2012-12-24 DE DE112012004934.9T patent/DE112012004934B4/de active Active
Also Published As
Publication number | Publication date |
---|---|
DE112012004934T5 (de) | 2014-09-11 |
US8637931B2 (en) | 2014-01-28 |
WO2013101790A2 (en) | 2013-07-04 |
US8455313B1 (en) | 2013-06-04 |
CN104488079A (zh) | 2015-04-01 |
WO2013101790A3 (en) | 2015-06-11 |
US20130161744A1 (en) | 2013-06-27 |
US20130164890A1 (en) | 2013-06-27 |
GB2511445A (en) | 2014-09-03 |
GB2511445B (en) | 2015-11-25 |
DE112012004934B4 (de) | 2017-01-26 |
GB201408705D0 (en) | 2014-07-02 |
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Effective date of registration: 20171107 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171107 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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