JP5775650B1 - 半導体装置の製造方法、及び、半導体装置 - Google Patents
半導体装置の製造方法、及び、半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 208
- 238000004519 manufacturing process Methods 0.000 title claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 46
- 229920005591 polysilicon Polymers 0.000 claims abstract description 46
- 238000005530 etching Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 207
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 150000001875 compounds Chemical class 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 230000003071 parasitic effect Effects 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 61
- 229910052710 silicon Inorganic materials 0.000 description 61
- 239000010703 silicon Substances 0.000 description 61
- 150000004767 nitrides Chemical class 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- QBYJBZPUGVGKQQ-SJJAEHHWSA-N aldrin Chemical compound C1[C@H]2C=C[C@@H]1[C@H]1[C@@](C3(Cl)Cl)(Cl)C(Cl)=C(Cl)[C@@]3(Cl)[C@H]12 QBYJBZPUGVGKQQ-SJJAEHHWSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
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Abstract
Description
102.第1のレジスト
103.フィン状シリコン層
104.第1の絶縁膜
105.第2の絶縁膜
106.第1のポリシリコン
106a.第1のダミーゲート
107.第3の絶縁膜
107a.第1のハードマスク
108.第2のレジスト
109.柱状シリコン層
110.第4の絶縁膜
111.第3のレジスト
112.第1の拡散層
113.第2のポリシリコン
113a.第2のダミーゲート
114.第6の絶縁膜
114a.第2のハードマスク
115.第5の絶縁膜
115a.サイドウォール
116.第2の拡散層
117.第1のエピタキシャル成長層
118.金属と半導体の化合物
119.コンタクトストッパ膜
120.層間絶縁膜
121.ゲート絶縁膜
122.金属
122a.ゲート電極
122b.ゲート配線
123.第7の絶縁膜
124.第4のレジスト
125.コンタクト孔
126.第5のレジスト
127.コンタクト孔
128.金属
128a.金属配線
128b.金属配線
128c.金属配線
129.コンタクト
130.コンタクト
131.第6のレジスト
132.第6のレジスト
133.第6のレジスト
Claims (9)
- 半導体基板上にフィン状半導体層を形成し、前記フィン状半導体層の周囲に第1の絶縁膜を形成する第1工程と、
前記第1工程の後、前記フィン状半導体層の周囲に第2の絶縁膜を形成し、前記第2の絶縁膜の上に第1のポリシリコンを堆積し平坦化し、前記第1のポリシリコン上に第3の絶縁膜を形成し、ゲート配線と柱状半導体層を形成するための第2のレジストを、前記フィン状半導体層の方向に対して垂直の方向に形成し、前記第3の絶縁膜と前記第1のポリシリコンと前記第2の絶縁膜と前記フィン状半導体層をエッチングすることにより、柱状半導体層と前記第1のポリシリコンによる第1のダミーゲートと前記第3の絶縁膜による第1のハードマスクとを形成する第2工程と、
前記第2工程の後、前記柱状半導体層と前記第1のダミーゲートの周囲に第4の絶縁膜を形成し、前記第4の絶縁膜の周囲に第2のポリシリコンを堆積し平坦化し、エッチバックし、前記第1のハードマスクを露出し、第6の絶縁膜を堆積し、エッチングをすることにより、前記第1のハードマスクの側壁に、第2のハードマスクを形成し、前記第2のポリシリコンをエッチングすることにより、前記第1のダミーゲートと前記柱状半導体層の側壁に残存させ、第2のダミーゲートを形成する第3工程と、
前記第2のダミーゲートの周囲に、第5の絶縁膜を形成し、エッチングし、サイドウォール状に残存させ、前記第5の絶縁膜からなるサイドウォールを形成し、前記フィン状半導体層上に第1のエピタキシャル成長層を形成する第4工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第2のダミーゲートの上面の面積は、前記第2のダミーゲートの下面の面積より大きいことを特徴とする請求項1に記載の半導体装置。
- 前記柱状半導体層と前記第1のダミーゲートの周囲に第4の絶縁膜を形成後、第3のレジストを形成し、エッチバックを行い、前記柱状半導体層上部を露出し、前記柱状半導体層上部に第1の拡散層を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第5の絶縁膜からなるサイドウォールを形成後、前記フィン状半導体層上部と前記柱状半導体層下部に第2の拡散層を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1のエピタキシャル成長層に金属と半導体の化合物を形成することを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第4の工程の後、コンタクトストッパ膜を堆積し、層間絶縁膜を堆積し化学機械研磨し、前記第2のダミーゲートと前記第1のダミーゲートの上部を露出し、前記第2のダミーゲートと前記第1のダミーゲートを除去し、前記第2の絶縁膜と前記第4の絶縁膜を除去し、ゲート絶縁膜を前記柱状半導体層の周囲と前記第5の絶縁膜の内側に形成し、金属を堆積し、エッチバックを行い、ゲート電極及びゲート配線を形成する第5工程を有することを特徴とする請求項1に記載の半導体装置の製造方法。
- 半導体基板上に形成されたフィン状半導体層と、
前記フィン状半導体層の周囲に形成された第1の絶縁膜と、
前記フィン状半導体層上に形成された柱状半導体層と、
前記柱状半導体層の周囲に形成されたゲート絶縁膜と、
前記ゲート絶縁膜の周囲に形成された金属からなるゲート電極と、
前記ゲート電極に接続された前記フィン状半導体層に直交する方向に延在する金属からなるゲート配線と、
前記フィン状半導体層上に形成された第1のエピタキシャル成長層と、を有し、
前記ゲート電極と前記ゲート配線の上面の面積は、前記ゲート電極と前記ゲート配線の下面の面積より大きく、かつ、前記第1のエピタキシャル成長層の前記フィン状半導体層に直交する方向の幅は、前記フィン状半導体層の前記フィン状半導体層に直交する方向の幅より広いことを特徴とする半導体装置。 - 前記柱状半導体層の上部に形成された第1の拡散層と、
前記フィン状半導体層の上部と前記柱状半導体層の下部に形成された第2の拡散層と、を有することを特徴とする請求項7に記載の半導体装置。 - 前記ゲート電極と前記ゲート配線の周囲と底部に形成された前記ゲート絶縁膜とをさらに有することを特徴とする請求項7に記載の半導体装置。
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